Band gap control via tuning of inversion degree in CdIn2S4 spinel

Based on theoretical arguments, we propose a possible route for controlling the band-gap in the promising photovoltaic material CdIn2S4. Our ab initio calculations show that the experimental degree of inversion in this spinel (fraction of tetrahedral sites occupied by In) corresponds approximately to the equilibrium value given by the minimum of the theoretical inversion free energy at a typical synthesis temperature. Modification of this temperature, or of the cooling rate after synthesis, is then expected to change the inversion degree, which in turn sensitively tunes the electronic band-gap of the solid, as shown here by screened hybrid functional calculations.

Electronic properties of doped magnesium thioindate ternary spinel in the normal and in the inverse structure

We present a theoretical study of the structural and electronic properties of the M-doped MgIn2S4 ternary spinel semiconductor with M = V, Cr, and Mn. All substitutions, in the normal and in the inverse structure, are analyzed. Some of these possible substitutions present intermediate-band states in the band gap with a different occupation for a spin component. It increases the possibilities of inter-band transitions and could be interesting for applications in optoelectronic devices. The contribution to, and the electronic configuration of, these intermediate bands for the octahedral and tetrahedral sites is analyzed and discussed. The study of the substitutional energies indicates that these substitutions are favorable. Comparison between the pure and doped hosts absorption coefficients shows that this deeper band opens up more photon absorption channels and could therefore increase the solar-light absorption with respect to the host.

Geología de las ultramafitas pre-andinas de Tapo y Acobamba, Tarma, en la Cordillera Oriental de Perú

Ultramafic rocks occur scattered along a 300 km long NNW-SSE trending belt, parallel to the central Peruvian Andes in the Cordillera Oriental, from Tarma (Junín Dept.) to Huancapallac and Tingo María (Huánuco Dept.). The Tarma occurrences (Tapo and Acobamba) are dealt with here, as the first step of a broader research. The Tapo massif comprises strongly tectonised serpentinites with scarce peridotitic relics, amphibolites and podiform chromitites. It was overthrust on early Carboniferous metasedimentary rocks of the Andean basement (Ambo Group), and it shows evidences of a pre-Andean deformational history, not observed in the Ambo Group; the basal thrust plane is folded by the Andean tectonics. The two smaller Acobamba occurrences are also allochtonous and show similar tectonic features. Major and trace element composition of amphibolites point to a tholeiitic basalt (to picrobasalt) protolith, compatible with an ocean-ridge or ocean-island environment. Small podiform chromitite lenses and chromite disseminations also occur; they are strongly deformed, metamorphosed and overprinted by hydrothermal alteration related to deformation, and were the subject of small scale mining. The ores comprise mainly chromite, ferritchromite, spinel, magnetite, ilmenite and scarce sulphides, as well as the secondary minerals stichtite and nimite. Results of this work exclude current interpretations of the Tarma ultramafites as autochtonous igneous intrusives, and point to a new interpretation for their emplacement.

Electronic, structural, and optical properties of the host and Cr-doped cadmium thioindate

The cadmium thioindate spinel CdIn2S4 semiconductor has potential applications for optoelectronic devices. We present a theoretical study of the structural and optoelectronic properties of the host and of the Cr-doped ternary spinel. For the host spinel, we analyze the direct or indirect character of the energy bandgap, the change of the energy bandgap with the anion displacement parameter and with the site cation distribution, and the optical properties. The main effect of the Cr doping is the creation of an intermediate band within the energy bandgap. The character and the occupation of this band are analyzed for two substitutions: Cr by In and Cr by Cd. This band permits more channels for the photon absorption. The optical properties are obtained and analyzed. The absorption coefficients are decomposed into contributions from the different absorption channels and from the inter-and intra-atomic components.

Effect of composition, sonication and pressure on the rate capability of 5 V-LiNi0.5Mn1.5O4 composite cathodes

Positive composite electrodes having LiNi0.5Mn1.5O4 spinel as active material, a blend of graphite and carbon black for increasing the electrode electrical conductivity and either polyvinyldenefluoride (PVDF) or a blend of PVDF with a small amount of Teflon® (1 wt%) for building up the electrode. They have been processed by tape casting on an aluminum foil as current collector using the doctor blade technique. Additionally, the component blends were either sonicated or not, and the processed electrodes were compacted or not under subsequent cold pressing. Composites electrodes with high weight, up to 17 mg/cm2, were prepared and studied as positive electrodes for lithium-ion batteries. The addition of Teflon® and the application of the sonication treatment lead to uniform electrodes that are well-adhered to the aluminum foil. Both parameters contribute to improve the capacity drained at high rates (5C). Additional compaction of the electrode/aluminum assemblies remarkably enhances the electrode rate capabilities. At 5C rate, remarkable capacity retentions between 80% and 90% are found for electrodes with weights in the range 3–17 mg/cm2, having Teflon® in their formulation, prepared after sonication of their component blends and compacted under 2 tonnes/cm2.

Photovoltaic application of the V, Cr and Mn-doped cadmium thioindate

The CdIn2S4 spinel semiconductor is a potential photovoltaic material due to its energy band gap and absorption properties. These optoelectronic properties can be potentiality improved by the insertion of intermediate states into the energy bandgap. We explore this possibility using M = Cr, V and Mn as an impurity. We analyze with first-principles almost all substitutions of the host atoms by M at the octahedral and tetrahedral sites in the normal and inverse spinel structures. In almost all cases, the impurities introduce deeper bands into the host energy bandgap. Depending on the site substitution, these bands are full, empty or partially-full. It increases the number of possible inter-band transitions and the possible applications in optoelectronic devices. The contribution of the impurity states to these bands and the substitutional energies indicate that these impurities are energetically favorable for some sites in the host spinel. The absorption coefficients in the independent-particle approximation show that these deeper bands open additional photon absorption channels. It could therefore increase the solar-light absorption with respect to the host.