Laser Shock Microformingof Thin Metal Sheets with ns Lasers

Continuous and long-pulse lasers have been used for the forming of metal sheets in macroscopic mechanical applications. However, for the manufacturing of micro-electromechanical systems (MEMS), the use of ns laser pulses provides a suitable parameter matching over an important range of sheet components that, preserving the short interaction time scale required for the predominantly mechanical (shock) induction of deformation residual stresses, allows for the successful processing of components in a medium range of miniaturization without appreciable thermal deformation.. In the present paper, the physics of laser shock microforming and the influence of the different experimental parameters on the net bending angle are presented.

Laser Shock Micro-Forming as an Emerging Technique for Microsystems Shaping and Adjustment

Continuous and long-pulse lasers have been extensively used for the forming of metal sheets for macroscopic mechanical applications. However, for the manufacturing of Micro-Mechanical Systems (MMS), the applicability of such type of lasers is limited by the long relaxation time of the thermal fields responsible for the forming phenomena. As a consequence, the final sheet deformation state is attained only after a certain time, what makes the generated internal residual stress fields more dependent on ambient conditions and might difficult the subsequent assembly process. The use of short pulse (ns) lasers provides a suitable parameter matching for the laser forming of an important range of sheet components used in MEMS. The short interaction time scale required for the predominantly mechanic (shock) induction of deformation residual stresses allows the successful processing of components in a medium range of miniaturization (particularly important according to its frequent use in such systems). In the present paper, Laser Shock Micro-Forming (LSμF) is presented as an emerging technique for Microsystems parts shaping and adjustment along with a discussion on its physical foundations and practical implementation possibilities developed by the authors.

Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects.

Analysis of wave attenuation and shore protection of a bulk carrier ship performing as a detached floating breakwater

Análisis de la atenuación del oleaje por un carguero funcionando como dique flotante y aplicación a dos casos de protección portuaria y costera. The effectiveness of a bulk carrier working as a detached floating breakwater to protect a stretch of coast and form salients or tombolos is assessed in this paper. Experiments were conducted in the Madrid CEDEX facilities in a 30 m long, 3 m wide, 1/150 scale flume. The bulk carrier ship is 205 m long, 29 m wide and 18 m in height with a draught of 13 m, and has been subjected to irregular waves with significant heights from 2 m to 4 m and peak periods from 6 s to 12 s at a depth of 15 m, all prototype dimensions. Three probes were placed between the wave paddle and the ship to record incident and reflected waves and four probes were placed between the ship and the coastline to measure the transmitted waves. Transmission, reflection and dissipation coefficients (Ct, Cr, Cd) were calculated to determine wave attenuation. Results show good shelter in the lee of the ship with values of Ct under 0.5 for peak periods from 6 s to 11 s. In addition, forces on the mooring chains were measured showing maximum values of about 2000 tons at a 10 speak period. Finally, two analytical models were used to determine the shoreline’s response to the ship’s protection and to assess the possible forming of salients or tombolos. According to the results, salients - but not tombolos - are formed in all tests.