In-situ and Ex-situ characterization of III-V semiconductor materials and solar cells upon 10 MEV proton irradiation

In this work we present the results and analysis of a 10 MeV proton irradiation experiment performed on III-V semiconductor materials and solar cells. A set of representative devices including lattice-matched InGaP/GaInAs/Ge triple junction solar cells and single junction GaAs and InGaP component solar cells and a Ge diode were irradiated for different doses. The devices were studied in-situ before and after each exposure at dark and 1 sun AM0 illumination conditions, using a solar simulator connected to the irradiation chamber through a borosilicate glass window. Ex-situ characterization techniques included dark and 1 sun AM0 illumination I-V measurements. Furthermore, numerical simulation of the devices using D-AMPS-1D code together with calculations based on the TRIM software were performed in order to gain physical insight on the experimental results. The experiment also included the proton irradiation of an unprocessed Ge solar cell structure as well as the irradiation of a bare Ge(100) substrate. Ex-situ material characterization, after radioactive deactivation of the samples, includes Raman spectroscopy and spectral reflectivity.

Application of photoreflectance to advanced multilayer structures for photovoltaics

Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, including quantum-dot-based prototypes of intermediate band solar cells, quantum-well structures, highly mismatched alloys, and III?V-based multi-junction devices, thereby demonstrating the suitability of PR as a powerful diagnostic tool. Examples will be given to illustrate the value of this spectroscopic technique for PV including (i) the analysis of the PR spectra in search of critical points associated to absorption onsets; (ii) distinguishing signatures related to quantum confinement from those originating from delocalized band states; (iii) determining the intensity of the electric field related to built-in potentials at interfaces according to the Franz?Keldysh (FK) theory; and (v) determining the nature of different oscillatory PR signals among those ascribed to FK-oscillations, interferometric and photorefractive effects. The aim is to attract the interest of researchers in the field of PV to modulation spectroscopies, as they can be helpful in the analysis of their devices.

Advanced Fresnel Köhler concentrators for photovoltaic applications

La concentración fotovoltaica (CPV) es una de las formas más prometedoras de reducir el coste de la energía proveniente del sol. Esto es posible gracias a células solares de alta eficiencia y a una significativa reducción del tamaño de la misma, que está fabricada con costosos materiales semiconductores. Ambos aspectos están íntimamente ligados ya que las altas eficiencias solamente son posibles con materiales y tecnologías de célula caros, lo que forzosamente conlleva una reducción del tamaño de la célula si se quiere lograr un sistema rentable. La reducción en el tamaño de las células requiere que la luz proveniente del sol ha de ser redirigida (es decir, concentrada) hacia la posición de la célula. Esto se logra colocando un concentrador óptico encima de la célula. Estos concentradores para CPV están formados por diferentes elementos ópticos fabricados en materiales baratos, con el fin de reducir los costes de producción. El marco óptimo para el diseño de concentradores es la óptica anidólica u óptica nonimaging. La óptica nonimaging fue desarrollada por primera vez en la década de los años sesenta y ha ido evolucionando significativamente desde entonces. El objetivo de los diseños nonimaging es la transferencia eficiente de energía entre la fuente y el receptor (sol y célula respectivamente, en el caso de la CPV), sin tener en cuenta la formación de imagen. Los sistemas nonimaging suelen ser simples, están compuestos de un menor número de superficies que los sistemas formadores de imagen y son más tolerantes a errores de fabricación. Esto hace de los sistemas nonimaging una herramienta fundamental, no sólo en el diseño de concentradores fotovoltaicos, sino también en el diseño de otras aplicaciones como iluminación, proyección y comunicaciones inalámbricas ópticas. Los concentradores ópticos nonimaging son adecuados para aplicaciones CPV porque el objetivo no es la reproducción de una imagen exacta del sol (como sería el caso de las ópticas formadoras de imagen), sino simplemente la colección de su energía sobre la célula solar. Los concentradores para CPV pueden presentar muy diferentes arquitecturas y elementos ópticos, dando lugar a una gran variedad de posibles diseños. El primer elemento óptico que es atravesado por la luz del sol se llama Elemento Óptico Primario (POE en su nomenclatura anglosajona) y es el elemento más determinante a la hora de definir la forma y las propiedades del concentrador. El POE puede ser refractivo (lente) o reflexivo (espejo). Esta tesis se centra en los sistemas CPV que presentan lentes de Fresnel como POE, que son lentes refractivas delgadas y de bajo coste de producción que son capaces de concentrar la luz solar. El capítulo 1 expone una breve introducción a la óptica geométrica y no formadora de imagen (nonimaging), explicando sus fundamentos y conceptos básicos. Tras ello, la integración Köhler es presentada en detalle, explicando sus principios, válidos tanto para aplicaciones CPV como para iluminación. Una introducción a los conceptos fundamentales de CPV también ha sido incluida en este capítulo, donde se analizan las propiedades de las células solares multiunión y de los concentradores ópticos empleados en los sistemas CPV. El capítulo se cierra con una descripción de las tecnologías existentes empleadas para la fabricación de elementos ópticos que componen los concentradores. El capítulo 2 se centra principalmente en el diseño y desarrollo de los tres concentradores ópticos avanzados Fresnel Köhler que se presentan en esta tesis: Fresnel-Köhler (FK), Fresnel-Köhler curvo (DFK) y Fresnel-Köhler con cavidad (CFK). Todos ellos llevan a cabo integración Köhler y presentan una lente de Fresnel como su elemento óptico primario. Cada uno de estos concentradores CPV presenta sus propias propiedades y su propio procedimiento de diseño. Además, presentan todas las características que todo concentrador ha de tener: elevado factor de concentración, alta tolerancia de fabricación, alta eficiencia óptica, irradiancia uniforme sobre la superficie de la célula y bajo coste de producción. Los concentradores FK y DFK presentan una configuración de cuatro sectores para lograr la integración Köhler. Esto quiere decir que POE y SOE se dividen en cuatro sectores simétricos cada uno, y cada sector del POE trabaja conjuntamente con su correspondiente sector de SOE. La principal diferencia entre los dos concentradores es que el POE del FK es una lente de Fresnel plana, mientras que una lente curva de Fresnel es empleada como POE del DFK. El concentrador CFK incluye una cavidad de confinamiento externo integrada, que es un elemento óptico capaz de recuperar los rayos reflejados por la superficie de la célula con el fin de ser reabsorbidos por la misma. Por tanto, se aumenta la absorción de la luz, lo que implica un aumento en la eficiencia del módulo. Además, este capítulo también explica un método de diseño alternativo para los elementos faceteados, especialmente adecuado para las lentes curvas como el POE del DFK. El capítulo 3 se centra en la caracterización y medidas experimentales de los concentradores ópticos presentados en el capítulo 2, y describe sus procedimientos. Estos procedimientos son en general aplicables a cualquier concentrador basado en una lente de Fresnel, e incluyen tres tipos principales de medidas experimentales: eficiencia eléctrica, ángulo de aceptancia y uniformidad de la irradiancia en el plano de la célula. Los resultados que se muestran a lo largo de este capítulo validarán a través de medidas a sol real las características avanzadas que presentan los concentradores Köhler, y que se demuestran en el capítulo 2 mediante simulaciones de rayos. Cada concentrador (FK, DFK y CFK) está diseñado y optimizado teniendo en cuenta condiciones de operación realistas. Su rendimiento se modela de forma exhaustiva mediante el trazado de rayos en combinación con modelos distribuidos para la célula. La tolerancia es un asunto crítico de cara al proceso de fabricación, y ha de ser máxima para obtener sistemas de producción en masa rentables. Concentradores con tolerancias limitadas generan bajadas significativas de eficiencia a nivel de array, causadas por el desajuste de corrientes entre los diferentes módulos (principalmente debido a errores de alineación en la fabricación). En este sentido, la sección 3.5 presenta dos métodos matemáticos que estiman estas pérdidas por desajuste a nivel de array mediante un análisis de sus curvas I-V, y por tanto siendo innecesarias las medidas a nivel de mono-módulo. El capítulo 3 también describe la caracterización indoor de los elementos ópticos que componen los concentradores, es decir, de las lentes de Fresnel que actúan como POE y de los secundarios free-form. El objetivo de esta caracterización es el de evaluar los adecuados perfiles de las superficies y las transmisiones ópticas de los diferentes elementos analizados, y así hacer que el rendimiento del módulo sea el esperado. Esta tesis la cierra el capítulo 4, en el que la integración Köhler se presenta como una buena alternativa para obtener distribuciones uniformes en aplicaciones de iluminación de estado sólido (iluminación con LED), siendo particularmente eficaz cuando se requiere adicionalmente una buena mezcla de colores. En este capítulo esto se muestra a través del ejemplo particular de un concentrador DFK, el cual se ha utilizado para aplicaciones CPV en los capítulos anteriores. Otra alternativa para lograr mezclas cromáticas apropiadas está basada en un método ya conocido (deflexiones anómalas), y también se ha utilizado aquí para diseñar una lente TIR aplanética delgada. Esta lente cumple la conservación de étendue, asegurando así que no hay bloqueo ni dilución de luz simultáneamente. Ambos enfoques presentan claras ventajas sobre las técnicas clásicas empleadas en iluminación para obtener distribuciones de iluminación uniforme: difusores y mezcla caleidoscópica mediante guías de luz. ABSTRACT Concentrating Photovoltaics (CPV) is one of the most promising ways of reducing the cost of energy collected from the sun. This is possible thanks to both, very high-efficiency solar cells and a large decrease in the size of cells, which are made of costly semiconductor materials. Both issues are closely linked since high efficiency values are only possible with expensive cell materials and technologies, implying a compulsory area reduction if cost-effectiveness is desired. The reduction in the cell size requires that light coming from the sun must be redirected (i.e. concentrated) towards the cell position. This is achieved by placing an optical concentrator system on top of the cell. These CPV concentrators consist of different optical elements manufactured on cheap materials in order to maintain low production costs. The optimal framework for the design of concentrators is nonimaging optics. Nonimaging optics was first developed in the 60s decade and has been largely developed ever since. The aim of nonimaging devices is the efficient transfer of light power between the source and the receiver (sun and cell respectively in the case of CPV), disregarding image formation. Nonimaging systems are usually simple, comprised of fewer surfaces than imaging systems and are more tolerant to manufacturing errors. This renders nonimaging optics a fundamental tool, not only in the design of photovoltaic concentrators, but also in the design of other applications as illumination, projection and wireless optical communications. Nonimaging optical concentrators are well suited for CPV applications because the goal is not the reproduction of an exact image of the sun (as imaging optics would provide), but simply the collection of its energy on the solar cell. Concentrators for CPV may present very different architectures and optical elements, resulting in a vast variety of possible designs. The first optical element that sunlight goes through is called the Primary Optical Element (POE) and is the most determinant element in order to define the shape and properties of the whole concentrator. The POE can be either refractive (lens) or reflective (mirror). This thesis focuses on CPV systems based on Fresnel lenses as POE, which are thin and inexpensive refractive lenses able to concentrate sunlight. Chapter 1 exposes a short introduction to geometrical and nonimaging optics, explaining their fundamentals and basic concepts. Then, the Köhler integration is presented in detail, explaining its principles, valid for both applications: CPV and illumination. An introduction to CPV fundamental concepts is also included in this chapter, analyzing the properties of multijunction solar cells and optical concentrators employed in CPV systems. The chapter is closed with a description of the existing technologies employed for the manufacture of optical elements composing the concentrator. Chapter 2 is mainly devoted to the design and development of the three advanced Fresnel Köhler optical concentrators presented in this thesis work: Fresnel-Köhler (FK), Dome-shaped Fresnel-Köhler (DFK) and Cavity Fresnel-Köhler (CFK). They all perform Köhler integration and comprise a Fresnel lens as their Primary Optical Element. Each one of these CPV concentrators presents its own characteristics, properties and its own design procedure. Their performances include all the key issues in a concentrator: high concentration factor, large tolerances, high optical efficiency, uniform irradiance on the cell surface and low production cost. The FK and DFK concentrators present a 4-fold configuration in order to perform the Köhler integration. This means that POE and SOE are divided into four symmetric sectors each one, working each POE sector with its corresponding SOE sector by pairs. The main difference between both concentrators is that the POE of the FK is a flat Fresnel lens, while a dome-shaped (curved) Fresnel lens performs as the DFK’s POE. The CFK concentrator includes an integrated external confinement cavity, which is an optical element able to recover rays reflected by the cell surface in order to be re-absorbed by the cell. It increases the light absorption, entailing an increase in the efficiency of the module. Additionally, an alternative design method for faceted elements will also be explained, especially suitable for dome-shaped lenses as the POE of the DFK. Chapter 3 focuses on the characterization and experimental measurements of the optical concentrators presented in Chapter 2, describing their procedures. These procedures are in general applicable to any Fresnel-based concentrator as well and include three main types of experimental measurements: electrical efficiency, acceptance angle and irradiance uniformity at the solar cell plane. The results shown along this chapter will validate through outdoor measurements under real sun operation the advanced characteristics presented by the Köhler concentrators, which are demonstrated in Chapter 2 through raytrace simulation: high optical efficiency, large acceptance angle, insensitivity to manufacturing tolerances and very good irradiance uniformity on the cell surface. Each concentrator (FK, DFK and CFK) is designed and optimized looking at realistic performance characteristics. Their performances are modeled exhaustively using ray tracing combined with cell modeling, taking into account the major relevant factors. The tolerance is a critical issue when coming to the manufacturing process in order to obtain cost-effective mass-production systems. Concentrators with tight tolerances result in significant efficiency drops at array level caused by current mismatch among different modules (mainly due to manufacturing alignment errors). In this sense, Section 3.5 presents two mathematical methods that estimate these mismatch losses for a given array just by analyzing its full-array I-V curve, hence being unnecessary any single mono-module measurement. Chapter 3 also describes the indoor characterization of the optical elements composing the concentrators, i.e. the Fresnel lenses acting as POEs and the free-form SOEs. The aim of this characterization is to assess the proper surface profiles and optical transmissions of the different elements analyzed, so they will allow for the expected module performance. This thesis is closed by Chapter 4, in which Köhler integration is presented as a good approach to obtain uniform distributions in Solid State Lighting applications (i.e. illumination with LEDs), being particularly effective when dealing with color mixing requirements. This chapter shows it through the particular example of a DFK concentrator, which has been used for CPV applications in the previous chapters. An alternative known method for color mixing purposes (anomalous deflections) has also been used to design a thin aplanatic TIR lens. This lens fulfills conservation of étendue, thus ensuring no light blocking and no light dilution at the same time. Both approaches present clear advantages over the classical techniques employed in lighting to obtain uniform illumination distributions: diffusers and kaleidoscopic lightpipe mixing.

Thermal, stress, and traps effects in AlGaN/GaN HEMTs

GaN y AlN son materiales semiconductores piezoeléctricos del grupo III-V. La heterounión AlGaN/GaN presenta una elevada carga de polarización tanto piezoeléctrica como espontánea en la intercara, lo que genera en su cercanía un 2DEG de grandes concentración y movilidad. Este 2DEG produce una muy alta potencia de salida, que a su vez genera una elevada temperatura de red. Las tensiones de puerta y drenador provocan un stress piezoeléctrico inverso, que puede afectar a la carga de polarización piezoeléctrica y así influir la densidad 2DEG y las características de salida. Por tanto, la física del dispositivo es relevante para todos sus aspectos eléctricos, térmicos y mecánicos. En esta tesis se utiliza el software comercial COMSOL, basado en el método de elementos finitos (FEM), para simular el comportamiento integral electro-térmico, electro-mecánico y electro-térmico-mecánico de los HEMTs de GaN. Las partes de acoplamiento incluyen el modelo de deriva y difusión para el transporte electrónico, la conducción térmica y el efecto piezoeléctrico. Mediante simulaciones y algunas caracterizaciones experimentales de los dispositivos, hemos analizado los efectos térmicos, de deformación y de trampas. Se ha estudiado el impacto de la geometría del dispositivo en su auto-calentamiento mediante simulaciones electro-térmicas y algunas caracterizaciones eléctricas. Entre los resultados más sobresalientes, encontramos que para la misma potencia de salida la distancia entre los contactos de puerta y drenador influye en generación de calor en el canal, y así en su temperatura. El diamante posee une elevada conductividad térmica. Integrando el diamante en el dispositivo se puede dispersar el calor producido y así reducir el auto-calentamiento, al respecto de lo cual se han realizado diversas simulaciones electro-térmicas. Si la integración del diamante es en la parte superior del transistor, los factores determinantes para la capacidad disipadora son el espesor de la capa de diamante, su conductividad térmica y su distancia a la fuente de calor. Este procedimiento de disipación superior también puede reducir el impacto de la barrera térmica de intercara entre la capa adaptadora (buffer) y el substrato. La muy reducida conductividad eléctrica del diamante permite que pueda contactar directamente el metal de puerta (muy cercano a la fuente de calor), lo que resulta muy conveniente para reducir el auto-calentamiento del dispositivo con polarización pulsada. Por otra parte se simuló el dispositivo con diamante depositado en surcos atacados sobre el sustrato como caminos de disipación de calor (disipador posterior). Aquí aparece una competencia de factores que influyen en la capacidad de disipación, a saber, el surco atacado contribuye a aumentar la temperatura del dispositivo debido al pequeño tamaño del disipador, mientras que el diamante disminuiría esa temperatura gracias a su elevada conductividad térmica. Por tanto, se precisan capas de diamante relativamente gruesas para reducer ele efecto de auto-calentamiento. Se comparó la simulación de la deformación local en el borde de la puerta del lado cercano al drenador con estructuras de puerta estándar y con field plate, que podrían ser muy relevantes respecto a fallos mecánicos del dispositivo. Otras simulaciones se enfocaron al efecto de la deformación intrínseca de la capa de diamante en el comportamiento eléctrico del dispositivo. Se han comparado los resultados de las simulaciones de la deformación y las características eléctricas de salida con datos experimentales obtenidos por espectroscopía micro-Raman y medidas eléctricas, respectivamente. Los resultados muestran el stress intrínseco en la capa producido por la distribución no uniforme del 2DEG en el canal y la región de acceso. Además de aumentar la potencia de salida del dispositivo, la deformación intrínseca en la capa de diamante podría mejorar la fiabilidad del dispositivo modulando la deformación local en el borde de la puerta del lado del drenador. Finalmente, también se han simulado en este trabajo los efectos de trampas localizados en la superficie, el buffer y la barrera. Las medidas pulsadas muestran que tanto las puertas largas como las grandes separaciones entre los contactos de puerta y drenador aumentan el cociente entre la corriente pulsada frente a la corriente continua (lag ratio), es decir, disminuir el colapse de corriente (current collapse). Este efecto ha sido explicado mediante las simulaciones de los efectos de trampa de superficie. Por su parte, las referidas a trampas en el buffer se enfocaron en los efectos de atrapamiento dinámico, y su impacto en el auto-calentamiento del dispositivo. Se presenta también un modelo que describe el atrapamiento y liberación de trampas en la barrera: mientras que el atrapamiento se debe a un túnel directo del electrón desde el metal de puerta, el desatrapamiento consiste en la emisión del electrón en la banda de conducción mediante túnel asistido por fonones. El modelo también simula la corriente de puerta, debida a la emisión electrónica dependiente de la temperatura y el campo eléctrico. Además, también se ilustra la corriente de drenador dependiente de la temperatura y el campo eléctrico. ABSTRACT GaN and AlN are group III-V piezoelectric semiconductor materials. The AlGaN/GaN heterojunction presents large piezoelectric and spontaneous polarization charge at the interface, leading to high 2DEG density close to the interface. A high power output would be obtained due to the high 2DEG density and mobility, which leads to elevated lattice temperature. The gate and drain biases induce converse piezoelectric stress that can influence the piezoelectric polarization charge and further influence the 2DEG density and output characteristics. Therefore, the device physics is relevant to all the electrical, thermal, and mechanical aspects. In this dissertation, by using the commercial finite-element-method (FEM) software COMSOL, we achieved the GaN HEMTs simulation with electro-thermal, electro-mechanical, and electro-thermo-mechanical full coupling. The coupling parts include the drift-diffusion model for the electron transport, the thermal conduction, and the piezoelectric effect. By simulations and some experimental characterizations, we have studied the device thermal, stress, and traps effects described in the following. The device geometry impact on the self-heating was studied by electro-thermal simulations and electrical characterizations. Among the obtained interesting results, we found that, for same power output, the distance between the gate and drain contact can influence distribution of the heat generation in the channel and thus influence the channel temperature. Diamond possesses high thermal conductivity. Integrated diamond with the device can spread the generated heat and thus potentially reduce the device self-heating effect. Electro-thermal simulations on this topic were performed. For the diamond integration on top of the device (top-side heat spreading), the determinant factors for the heat spreading ability are the diamond thickness, its thermal conductivity, and its distance to the heat source. The top-side heat spreading can also reduce the impact of thermal boundary resistance between the buffer and the substrate on the device thermal behavior. The very low electrical conductivity of diamond allows that it can directly contact the gate metal (which is very close to the heat source), being quite convenient to reduce the self-heating for the device under pulsed bias. Also, the diamond coated in vias etched in the substrate as heat spreading path (back-side heat spreading) was simulated. A competing mechanism influences the heat spreading ability, i.e., the etched vias would increase the device temperature due to the reduced heat sink while the coated diamond would decrease the device temperature due to its higher thermal conductivity. Therefore, relative thick coated diamond is needed in order to reduce the self-heating effect. The simulated local stress at the gate edge of the drain side for the device with standard and field plate gate structure were compared, which would be relevant to the device mechanical failure. Other stress simulations focused on the intrinsic stress in the diamond capping layer impact on the device electrical behaviors. The simulated stress and electrical output characteristics were compared to experimental data obtained by micro-Raman spectroscopy and electrical characterization, respectively. Results showed that the intrinsic stress in the capping layer caused the non-uniform distribution of 2DEG in the channel and the access region. Besides the enhancement of the device power output, intrinsic stress in the capping layer can potentially improve the device reliability by modulating the local stress at the gate edge of the drain side. Finally, the surface, buffer, and barrier traps effects were simulated in this work. Pulsed measurements showed that long gates and distances between gate and drain contact can increase the gate lag ratio (decrease the current collapse). This was explained by simulations on the surface traps effect. The simulations on buffer traps effects focused on illustrating the dynamic trapping/detrapping in the buffer and the self-heating impact on the device transient drain current. A model was presented to describe the trapping and detrapping in the barrier. The trapping was the electron direct tunneling from the gate metal while the detrapping was the electron emission into the conduction band described by phonon-assisted tunneling. The reverse gate current was simulated based on this model, whose mechanism can be attributed to the temperature and electric field dependent electron emission in the barrier. Furthermore, the mechanism of the device bias via the self-heating and electric field impact on the electron emission and the transient drain current were also illustrated.

TEM study of the AlN grain orientation grown on NCD diamond substrate

Piezoelectric AlN layer grain orientation, grown by room temperature reactive sputtering, is analyzed by transmission electron microscopy (TEM).Two types of samples are studied: (i) AlN grown on well-polished NCD (nano-crystalline diamond) diamond, (ii) AlN grown on an up-side down NCD layer previously grown on a Si substrate, i.e. diamond surface as smooth as that of Si substrates. The second set of sample show a faster lignment of their AlN grain caxis attributed to it smoother diamond free surface. No grain orientation relationship between diamond substrate grain and the AlN ones is evidenced, which seems to indicate the preponderance role of the surface substrate state.

Inorganic Photovoltaics - Planar and Nanostructured Devices

Since its invention in the 1950s, semiconductor solar cell technology has evolved in great leaps and bounds. Solar power is now being considered as a serious leading contender for replacing fossil fuel based power generation. This article reviews the evolution and current state, and potential areas of near future research focus, of leading inorganic materials based solar cells, including bulk crystalline, amorphous thin-films, and nanomaterials based solar cells. Bulk crystalline silicon solar cells continue to dominate the solar power market, and continued efforts at device fabrication improvements, and device topology advancements are discussed. III-V compound semiconductor materials on c-Si for solar power generation are also reviewed. Developments in thin-film based solar cells are reviewed, with a focus on amorphous silicon, copper zinc tin sulfide, cadmium telluride, as well as nanostructured Cadmium telluride. Recent developments in the use of nano-materials for solar power generation, including silicon and gallium arsenide nanowires, are also reviewed.

Intermediate band materials for more efficient solar energy use: quantum modelling and experimental realizations

The intermediate band (IB) solar cell (Fig. 1) has been proposed [1] to increase photovoltaic efficiency by a factor above 1.5, based on the absorption of two sub-bandgap photons to promote an electron across the bandgap. To realize this principle, that can be applied also to obtain efficient photocatalysis with sunlight, we proposed in recent years several materials where a metal or heavy element, substituting for an electropositive atom in a known semiconductor that has an appropriate band gap width (around 2 eV), forms inside the gap the partially filled levels needed for this aim

Absorption coefficient for the intraband transitions in quantum dot materials

In this paper, we present calculations of the absorption coefficient for transitions between the bound states of quantum dots grown within a semiconductor and the extended states of the conduction band. For completeness, transitions among bound states are also presented. In the separation of variables, single band k·p model is used in which most elements may be expressed analytically. The analytical formulae are collected in the appendix of this paper. It is concluded that the transitions are strong enough to provide a quick path to the conduction band for electrons pumped from the valence to the intermediate band

IBPOWER Project, Intermediate band materials and solar cells for photovoltaics with high efficiency and reduced cost

IBPOWER is a Project awarded under the 7th European Framework Programme that aims to advance research on intermediate band solar cells (IBSCs). These are solar cells conceived to absorb below bandgap energy photons by means of an electronic energy band that is located within the semiconductor bandgap, whilst producing photocurrent with output voltage still limited by the total semiconductor bandgap. IBPOWER employs two basic strategies for implementing the IBSC concept. The first is based on the use of quantum dots, the IB arising from the confined energy levels of the electrons in the dots. Quantum dots have led to devices that demonstrate the physical operation principles of the IB concept and have allowed identification of the problems to be solved to achieve actual high efficiencies. The second approach is based on the creation of bulk intermediate band materials by the insertion of an appropriate impurity into a bulk semiconductor. Under this approach it is expected that, when inserted at high densities, these impurities will find it difficult to capture electrons by producing a breathing mode and will cease behaving as non-radiative recombination centres. Towards this end the following systems are being investigated: a) Mn: In1-xGax N; b) transition metals in GaAs and c) thin films.

Modeling Piezoelectric Harvesting Materials in Road Traffic Applications.

En esta comunicación se presenta el método para obtener modelos equivalentes eléctricos de materiales piezoeléctricos utilizados en entornos con tráfico vial para aplicaciones "Energy Harvesting". Los resultados experimentales se procesan para determinar la estructura topológica óptima y la tecnología de los elementos semiconductores utilizados en la etapa de entrada del sistema de alimentación "harvesting". Asimismo se presenta el modelo de la fuente de alimentación no regulada bajo demanda variable de corriente. Abstract: The method to obtain electrical equivalent models of piezoelectric materials used in energy harvesting road traffic environment is presented in this paper. The experimental results are processed in order to determine the optimal topological structure and technology of the semiconductor elements used in the input stage of the power harvesting system. The non regulated power supply model under variable current demand is also presented.

Estudio teórico de propiedades termodinámicas y optoelectronicas de nuevos materiales fotovoltaicos de banda intermedia = Theoretical study of thermodynamic and optoelectronic properties of new intermediate band photovoltaic materials

Los materiales de banda intermedia han atraido la atención de la comunidad científica en el campo de la energía solar fotovoltaica en los últimos años. Sin embargo, con el objetivo de entender los fundamentos de las células solares de banda intermedia, se debe llevar a cabo un estudio profundo de la características de los materiales. Esto se puede hacer mediante un modelo teórico usando Primeros Principios. A partir de este enfoque se pueden obtener resultados tales como la estructura electrónica y propiedades ópticas, entre otras, de los semiconductores fuertemente dopados y sus precursores. Con el fin de desentrañar las estructuras de estos sistemas electrónicos, esta tesis presenta un estudio termodinámico y optoelectrónico de varios materiales fotovoltaicos. Específicamente se caracterizaron los materiales avanzados de banda intermedia y sus precursores. El estudio se hizo en términos de caracterización teórica de la estructura electrónica, la energética del sistema, entre otros. Además la estabilidad se obtuvo usando configuraciones adaptadas a la simetría del sistema y basado en la combinatoria. Las configuraciones de los sitios ocupados por defectos permiten obtener información sobre un espacio de configuraciones donde las posiciones de los dopantes sustituidos se basan en la simetría del sólido cristalino. El resultado puede ser tratado usando elementos de termodinámica estadística y da información de la estabilidad de todo el espacio simétrico. Además se estudiaron otras características importantes de los semiconductores de base. En concreto, el análisis de las interacciones de van der Waals fueron incluidas en el semiconductor en capas SnS2, y el grado de inversión en el caso de las espinelas [M]In2S4. En este trabajo además realizamos una descripción teórica exhaustiva del sistema CdTe:Bi. Este material de banda-intermedia muestra características que son distintas a las de los otros materiales estudiados. También se analizó el Zn como agente modulador de la posición de las sub-bandas prohibidas en el material de banda-intermedia CuGaS2:Ti. Analizándose además la viabilidad termodinámica de la formación de este compuesto. Finalmente, también se describió el GaN:Cr como material de banda intermedia, en la estructura zinc-blenda y en wurtztite, usando configuraciones de sitios ocupados de acuerdo a la simetría del sistema cristalino del semiconductor de base. Todos los resultados, siempre que fue posible, fueron comparados con los resultados experimentales. ABSTRACT The intermediate-band materials have attracted the attention of the scientific community in the field of the photovoltaics in recent years. Nevertheless, in order to understand the intermediate-band solar cell fundamentals, a profound study of the characteristics of the materials is required. This can be done using theoretical modelling from first-principles. The electronic structure and optical properties of heavily doped semiconductors and their precursor semiconductors are, among others, results that can be obtained from this approach. In order to unravel the structures of these crystalline systems, this thesis presents a thermodynamic and optoelectronic study of several photovoltaic materials. Specifically advanced intermediate-band materials and their precursor semiconductors were characterized. The study was made in terms of theoretical characterization of the electronic structure, energetics among others. The stability was obtained using site-occupancy-disorder configurations adapted to the symmetry of the system and based on combinatorics. The site-occupancy-disorder method allows the formation of a configurational space of substitutional dopant positions based on the symmetry of the crystalline solid. The result, that can be treated using statistical thermodynamics, gives information of the stability of the whole space of symmetry of the crystalline lattice. Furthermore, certain other important characteristics of host semiconductors were studied. Specifically, the van der Waal interactions were included in the SnS2 layered semiconductor, and the inversion degree in cases of [M]In2S4 spinels. In this work we also carried out an exhaustive theoretical description of the CdTe:Bi system. This intermediate-band material shows characteristics that are distinct from those of the other studied intermediate-band materials. In addition, Zn was analysed as a modulator of the positions of the sub-band gaps in the CuGaS2:Ti intermediate-band material. The thermodynamic feasibility of the formation of this compound was also carried out. Finally GaN:Cr intermediate-band material was also described both in the zinc-blende and the wurtztite type structures, using the symmetry-adapted-space of configurations. All results, whenever possible, were compared with experimental results.

Vertical-cavity semiconductor optical amplifiers (VCSOAs) as optical sensing elements

Semiconductor Optical Amplifiers (SOAs) have mainly found application in optical telecommunication networks for optical signal regeneration, wavelength switching or wavelength conversion. The objective of this paper is to report the use of semiconductor optical amplifiers for optical sensing taking into account their optical bistable properties. As it was previously reported, some semiconductor optical amplifiers, including Fabry-Perot and Distributed-Feedback Semiconductor Optical Amplifiers (FPSOAs and DFBSOAs), may exhibit optical bistability. The characteristics of the attained optical bistability in this kind of devices are strongly dependent on different parameters including wavelength, temperature or applied bias current and small variations lead to a change on their bistable properties. As in previous analyses for Fabry-Perot and DFB SOAs, the variations of these parameters and their possible application for optical sensing are reported in this paper for the case of the Vertical-Cavity Semiconductor Optical Amplifier (VCSOA). When using a VCSOA, the input power needed for the appearance of optical bistability is one order of magnitude lower than that needed in edge-emitting devices. This feature, added to the low manufacturing costs of VCSOAs and the ease to integrate them in 2-D arrays, makes the VCSOA a very promising device for its potential use in optical sensing applications.

Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires

Raman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtainedRaman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtained

Effect of van der Waals interaction on the properties of SnS2 layered semiconductor

Nowadays, dispersion correction applied on layered semiconductors is a topic of interest. Among the known layered semiconductors, SnS2 polytypes are wide gap semiconductors with a van der Waals interaction between their layers, which could form good materials to be used in photovoltaic applications. The present work gives an approach to the SnS2 geometrical and electronic characterization using an empirical dispersion correction added to the Perdew–Burke–Ernzerhof functional and subsequent actualization of the electronic charge density using the screened hybrid Heyd–Scuseria–Ernzerhof functional using a density functional code. The obtained interlayer distance and band-gap are in good agreement with experimental values when van der Waals dispersion forces are included.