Ultra high frequency thin film saw devices

Durante los últimos años el flujo de datos en la transmisión que tiene lugar en los sistemas de comunicación ha aumentado considerablemente de forma que día a día se requieren más aplicaciones trabajando en un rango de frecuencias muy alto (3-30 GHz). Muchos de estos sistemas de comunicación incluyen dispositivos de onda acústica superficial (SAW) y por tanto se hace necesario el aumento de frecuencia a la que éstos trabajan. Pero este incremento de frecuencia de los dispositivos SAW no sólo es utilizado en los sistemas de comunicación, varios tipos de sensores, por ejemplo, aumentan su sensibilidad cuando la frecuencia a la que trabajan también lo hace. Tradicionalmente los dispositivos SAW se han fabricado sobre cuarzo, LiNbO3 y LiTaO3 principalmente. Sin embargo la principal limitación de estos materiales es su velocidad SAW. Además, debido a la alta temperatura a la que se depositan no pueden ser integrados en la tecnología de fabricación CMOS. El uso de la tecnología de capa delgada, en la que un material piezoeléctrico es depositado sobre un substrato, se está utilizando en las últimas décadas para incrementar la velocidad SAW de la estructura y poder obtener dispositivos trabajando en el rango de frecuencias requerido en la actualidad. Por otra parte, esta tecnología podría ser integrada en el proceso de fabricación CMOS. Durante esta tesis nos hemos centrado en la fabricación de dispositivos SAW trabajando a muy alta frecuencia. Para ello, utilizando la tecnología de capa delgada, hemos utilizado la estructura nitruro de aluminio (AlN) sobre diamante que permite conseguir velocidades SAW del sustrato que no se pueden alcanzar con otros materiales. El depósito de AlN se realizó mediante sputtering reactivo. Durante esta tesis se han realizado diferentes experimentos para optimizar dicho depósito de forma que se han obtenido los parámetros óptimos para los cuales se pueden obtener capas de AlN de alta calidad sobre cualquier tipo de sustrato. Además todo el proceso se realizó a baja temperatura para que el procesado de estos dispositivos pueda ser compatible con la tecnología CMOS. Una vez optimizada la estructura AlN/diamante, mediante litografía por haz de electrones se fabricaron resonadores SAW de tamaño nanométrico que sumado a la alta velocidad resultante de la combinación AlN/diamante nos ha permitido obtener dispositivos trabajando en el rango de 10-28 GHz con un alto factor de calidad y rechazo fuera de la banda. Estás frecuencias y prestaciones no han sido alcanzadas por el momento en resonadores de este tipo. Por otra parte, se han utilizado estos dispositivos para fabricar sensores de presión de alta sensibilidad. Estos dispositivos son afectados altamente por los cambios de temperatura. Se realizó también un exhaustivo estudio de cómo se comportan en temperatura estos resonadores, entre -250ºC y 250ºC (rango de temperaturas no estudiado hasta el momento) diferenciándose dos regiones una a muy baja temperatura en la que el dispositivo muestra un coeficiente de retraso en frecuencia (TCF) relativamente bajo y otra a partir de los -100ºC en la que el TCF es similar al observado en la bibliografía. Por tanto, durante esta tesis se ha optimizado el depósito de AlN sobre diamante para que sea compatible con la tecnología CMOS y permita el procesado de dispositivos trabajando a muy alta frecuencia con altas prestaciones para comunicaciones y sensores. ABSTRACT The increasing volume of information in data transmission systems results in a growing demand of applications working in the super-high-frequency band (3–30 GHz). Most of these systems work with surface acoustic wave (SAW) devices and thus there is a necessity of increasing their resonance frequency. Moreover, sensor application includes this kind of devices. The sensitivity of them is proportional with its frequency. Traditionally, quartz, LiNbO3 and LiTaO3 have been used in the fabrication of SAW devices. These materials suffer from a variety of limitations and in particular they have low SAW velocity as well as being incompatible with the CMOS technology. In order to overcome these problems, thin film technology, where a piezoelectric material is deposited on top of a substrate, has been used during the last decades. The piezoelectric/substrate structure allows to reach the frequencies required nowadays and could be compatible with the mass electronic production CMOS technology. This thesis work focuses on the fabrication of SAW devices working in the super-high-frequency range. Thin film technology has been used in order to get it, especially aluminum nitride (AlN) deposited by reactive sputtering on diamond has been used to increase the SAW velocity. Different experiments were carried out to optimize the parameters for the deposit of high quality AlN on any kind of substrates. In addition, the system was optimized under low temperature and thus this process is CMOS compatible. Once the AlN/diamond was optimized, thanks to the used e-beam lithography, nanometric SAW resonators were fabricated. The combination of the structure and the size of the devices allow the fabrication of devices working in the range of 10-28 GHz with a high quality factor and out of band rejection. These high performances and frequencies have not been reached so far for this kind of devices. Moreover, these devices have been used as high sensitivity pressure sensors. They are affected by temperature changes and thus a wide temperature range (-250ºC to 250ºC) study was done. From this study two regions were observed. At very low temperature, the temperature coefficient of frequency (TCF) is low. From -100ºC upwards the TCF is similar to the one appearing in the literature. Therefore, during this thesis work, the sputtering of AlN on diamond substrates was optimized for the CMOS compatible fabrication of high frequency and high performance SAW devices for communication and sensor application.

Resonant behaviour of the barrier of YBa2Cu3O7 grain boundary Josephson junctions fabricated on bicrystalline substrates with different geometries

We have analyzed a resonant behavior in the dielectric constant associated to the barrier of YBa2Cu3O7 (YBCO) grain boundary Josephson junctions (GBJJs) fabricated on a wide variety of bicrystalline substrates: 12° [0 0 1] tilt asymmetric, 24° [0 0 1] tilt asymmetric, 24° [0 0 1] tilt symmetric, 24° [1 0 0] tilt asymmetric, 45° [1 0 0] tilt asymmetric and 24° [0 0 1] tilt symmetric +45° [1 0 0] tilt asymmetric bicrystals. The resonance analysis allows us to estimate a more appropriate value of the relative dielectric constant, and so a more adequate value for the length L of the normal N region assuming a SNINS model for the barrier. In this work, the L dependence on the critical current density Jc has been investigated. This analysis makes possible a single representation for all the substrate geometries independently on around which axes the rotation is produced to generate the grain boundary. On the other hand, no clear evidences exist on the origin of the resonance. The resonance frequency is in the order of 1011 Hz, pointing to a phonon dynamic influence on the resonance mechanism. Besides, its position is affected by the oxygen content of the barrier: a shift at low frequencies is observed when the misorientation angle increases.

Simulation, construction and characterization of a piezoelectric transducer using rexolite as acoustic matching

This article describes the simulation and characterization of an ultrasonic transducer using a new material called Rexolite to be used as a matching element. This transducer was simulated using a commercial piezoelectric ceramic PIC255 at 8 MHz. Rexolite, the new material, presents an excellent acoustic matching, specially in terms of the acoustic impedance of water. Finite elements simulations were used in this work. Rexolite was considered as a suitable material in the construction of the transducer due to its malleability and acoustic properties, to validate the simulations a prototype transducer was constructed. Experimental measurements were used to determine the resonance frequency of the prototype transducer. Simulated and experimental results were very similar showing that Rexolite may be an excellent matching, particularly for medical applications.

Contribución al diseño de lazos de realimentación electrónica para microsistemas electromecánicos (MEMS) resonantes: ruido de fase generado en lazos osciladores por sus realimentaciones

En 1966, D. B. Leeson publicó el artículo titulado “A simple model of feedback oscillator noise spectrum” en el que, mediante una ecuación obtenida de forma heurística y basada en parámetros conocidos de los osciladores, proponía un modelo para estimar el espectro de potencia que cuantifica el Ruido de Fase de estos osciladores. Este Ruido de Fase pone de manifiesto las fluctuaciones aleatorias que se producen en la fase de la señal de salida de cualquier oscilador de frecuencia f_0. Desde entonces, los adelantos tecnológicos han permitido grandes progresos en cuanto a la medida del Ruido de Fase, llegando a encontrar una estrecha “zona plana”, alrededor de f_0, conocida con el nombre de Ensanchamiento de Línea (EL) que Leeson no llegó a observar y que su modelo empírico no recogía. Paralelamente han ido surgiendo teorías que han tratado de explicar el Ruido de Fase con mayor o menor éxito. En esta Tesis se propone una nueva teoría para explicar el espectro de potencia del Ruido de Fase de un oscilador realimentado y basado en resonador L-C (Inductancia-Capacidad). Al igual que otras teorías, la nuestra también relaciona el Ruido de Fase del oscilador con el ruido térmico del circuito que lo implementa pero, a diferencia de aquellas, nuestra teoría se basa en un Modelo Complejo de ruido eléctrico que considera tanto las Fluctuaciones de energía eléctrica asociadas a la susceptancia capacitiva del resonador como las Disipaciones de energía eléctrica asociadas a su inevitable conductancia G=1⁄R, que dan cuenta del contacto térmico entre el resonador y el entorno térmico que le rodea. En concreto, la nueva teoría que proponemos explica tanto la parte del espectro del Ruido de Fase centrada alrededor de la frecuencia portadora f_0 que hemos llamado EL y su posterior caída proporcional a 〖∆f〗^(-2) al alejarnos de f_0, como la zona plana o pedestal que aparece en el espectro de Ruido de Fase lejos de esa f_0. Además, al saber cuantificar el EL y su origen, podemos explicar con facilidad la aparición de zonas del espectro de Ruido de Fase con caída 〖∆f〗^(-3) cercanas a la portadora y que provienen del denominado “exceso de ruido 1⁄f” de dispositivos de Estado Sólido y del ruido “flicker” de espectro 1⁄f^β (0,8≤β≤1,2) que aparece en dispositivos de vacío como las válvulas termoiónicas. Habiendo mostrado que una parte del Ruido de Fase de osciladores L-C realimentados que hemos denominado Ruido de Fase Térmico, se debe al ruido eléctrico de origen térmico de la electrónica que forma ese oscilador, proponemos en esta Tesis una nueva fuente de Ruido de Fase que hemos llamado Ruido de Fase Técnico, que se añadirá al Térmico y que aparecerá cuando el desfase del lazo a la frecuencia de resonancia f_0 del resonador no sea 0° o múltiplo entero de 360° (Condición Barkhausen de Fase, CBF). En estos casos, la modulación aleatoria de ganancia de lazo que realiza el Control Automático de Amplitud en su lucha contra ruidos que traten de variar la amplitud de la señal oscilante del lazo, producirá a su vez una modulación aleatoria de la frecuencia de tal señal que se observará como más Ruido de Fase añadido al Térmico. Para dar una prueba empírica sobre la existencia de esta nueva fuente de Ruido de Fase, se diseñó y construyó un oscilador en torno a un resonador mecánico “grande” para tener un Ruido de Fase Térmico despreciable a efectos prácticos. En este oscilador se midió su Ruido de Fase Técnico tanto en función del valor del desfase añadido al lazo de realimentación para apartarlo de su CBF, como en función de la perturbación de amplitud inyectada para mostrar sin ambigüedad la aparición de este Ruido de Fase Técnico cuando el lazo tiene este fallo técnico: que no cumple la Condición Barkhausen de Fase a la frecuencia de resonancia f_0 del resonador, por lo que oscila a otra frecuencia. ABSTRACT In 1966, D. B. Leeson published the article titled “A simple model of feedback oscillator noise spectrum” in which, by means of an equation obtained heuristically and based on known parameters of the oscillators, a model was proposed to estimate the power spectrum that quantifies the Phase Noise of these oscillators. This Phase Noise reveals the random fluctuations that are produced in the phase of the output signal from any oscillator of frequencyf_0. Since then, technological advances have allowed significant progress regarding the measurement of Phase Noise. This way, the narrow flat region that has been found around f_(0 ), is known as Line Widening (LW). This region that Leeson could not detect at that time does not appear in his empirical model. After Leeson’s work, different theories have appeared trying to explain the Phase Noise of oscillators. This Thesis proposes a new theory that explains the Phase Noise power spectrum of a feedback oscillator around a resonator L-C (Inductance-Capacity). Like other theories, ours also relates the oscillator Phase Noise to the thermal noise of the feedback circuitry, but departing from them, our theory uses a new, Complex Model for electrical noise that considers both Fluctuations of electrical energy associated with the capacitive susceptance of the resonator and Dissipations of electrical energy associated with its unavoidable conductance G=1/R, which accounts for the thermal contact between the resonator and its surrounding environment (thermal bath). More specifically, the new theory we propose explains both the Phase Noise region of the spectrum centered at the carrier frequency f_0 that we have called LW and shows a region falling as 〖∆f〗^(-2) as we depart from f_0, and the flat zone or pedestal that appears in the Phase Noise spectrum far from f_0. Being able to quantify the LW and its origin, we can easily explain the appearance of Phase Noise spectrum zones with 〖∆f〗^(-3) slope near the carrier that come from the so called “1/f excess noise” in Solid-State devices and “flicker noise” with 1⁄f^β (0,8≤β≤1,2) spectrum that appears in vacuum devices such as thermoionic valves. Having shown that the part of the Phase Noise of L-C oscillators that we have called Thermal Phase Noise is due to the electrical noise of the electronics used in the oscillator, this Thesis can propose a new source of Phase Noise that we have called Technical Phase Noise, which will appear when the loop phase shift to the resonance frequency f_0 is not 0° or an integer multiple of 360° (Barkhausen Phase Condition, BPC). This Phase Noise that will add to the Thermal one, comes from the random modulation of the loop gain carried out by the Amplitude Automatic Control fighting against noises trying to change the amplitude of the oscillating signal in the loop. In this case, the BPC failure gives rise to a random modulation of the frequency of the output signal that will be observed as more Phase Noise added to the Thermal one. To give an empirical proof on the existence of this new source of Phase Noise, an oscillator was designed and constructed around a “big” mechanical resonator whose Thermal Phase Noise is negligible for practical effects. The Technical Phase Noise of this oscillator has been measured with regard to the phase lag added to the feedback loop to separate it from its BPC, and with regard to the amplitude disturbance injected to show without ambiguity the appearance of this Technical Phase Noise that appears when the loop has this technical failure: that it does not fulfill the Barkhausen Phase Condition at f_0, the resonance frequency of the resonator and therefore it is oscillating at a frequency other than f_0.

Resonadores piezoeléctricos de cizalladura: estudio de la formación de biofilms y caracterización de fluidos magneto‐reológicos

La presente tesis revisa y analiza algunos aspectos fundamentales relativos al comportamiento de los sensores basados en resonadores piezoeléctricos TSM (Thickness Shear Mode), así como la aplicación de los mismos al estudio y caracterización de dos medios viscoelásticos de gran interés: los fluidos magnetoreológicos y los biofilms microbianos. El funcionamiento de estos sensores está basado en la medida de sus propiedades resonantes, las cuales varían al entrar en contacto con el material que se quiere analizar. Se ha realizado un análisis multifrecuencial, trabajando en varios modos de resonancia del transductor, en algunas aplicaciones incluso de forma simultánea (excitación pulsada). Se han revisado fenómenos como la presencia de microcontactos en la superficie del sensor y la resonancia de capas viscoelásticas de espesor finito, que pueden afectar a los sensores de cuarzo de manera contraria a lo que predice la teoría convencional (Sauerbrey y Kanazawa), pudiéndonos llevar a incrementos positivos de la frecuencia de resonancia. Además, se ha estudiado el efecto de una deposición no uniforme sobre el resonador piezoeléctrico. Para ello se han medido deposiciones de poliuretano, modelándose la respuesta del resonador con estas deposiciones mediante FEM. El modelo numérico permite estudiar el comportamiento del resonador al modificar distintas variables geométricas (espesor, superficie, no uniformidad y zona de deposición) de la capa depositada. Se ha demostrado que para espesores de entre un cuarto y media longitud de onda aproximadamente, una capa viscoelástica no uniforme sobre la superficie del sensor, amplifica el incremento positivo del desplazamiento de la frecuencia de resonancia en relación con una capa uniforme. Se ha analizado también el patrón geométrico de la sensibilidad del sensor, siendo también no uniforme sobre su superficie. Se han aplicado sensores TSM para estudiar los cambios viscoelásticos que se producen en varios fluidos magneto-reológicos (FMR) al aplicarles distintos esfuerzos de cizalla controlados por un reómetro. Se ha podido ver que existe una relación directa entre diversos parámetros reológicos obtenidos con el reómetro (fuerza normal, G’, G’’, velocidad de deformación, esfuerzo de cizalla…) y los parámetros acústicos, caracterizándose los FMR tanto en ausencia de campo magnético, como con campo magnético aplicado a distintas intensidades. Se han estudiado las ventajas que aporta esta técnica de medida sobre la técnica basada en un reómetro comercial, destacando que se consigue caracterizar con mayor detalle algunos aspectos relevantes del fluido como son la deposición de partículas (estabilidad del fluido), el proceso de ruptura de las estructuras formadas en los FMR tanto en presencia como en ausencia de campo magnético y la rigidez de los microcontactos que aparecen entre partículas y superficies. También se han utilizado sensores de cuarzo para monitorear en tiempo real la formación de biofilms de Staphylococcus epidermidis y Eschericia coli sobre los propios resonadores de cristal de cuarzo sin ningún tipo de recubrimiento, realizándose ensayos con cepas que presentan distinta capacidad de producir biofilm. Se mostró que, una vez que se ha producido una primera adhesión homogénea de las bacterias al sustrato, podemos considerar el biofilm como una capa semi-infinita, de la cual el sensor de cuarzo refleja las propiedades viscoelásticas de la región inmediatamente contigua al resonador, no siendo sensible a lo que sucede en estratos superiores del biofilm. Los experimentos han permitido caracterizar el módulo de rigidez complejo de los biofilms a varias frecuencias, mostrándose que el parámetro característico que indica la adhesión de un biofilm tanto en el caso de S. epidermidis como de E. coli, es el incremento de G’ (relacionado con la elasticidad o rigidez de la capa), el cual viene ligado a un incremento de la frecuencia de resonancia del sensor. ABSTRACT This thesis reviews and analyzes some key aspects of the behavior of sensors based on piezoelectric resonators TSM (Thickness Shear Mode) and their applications to the study and characterization in two viscoelastic media of great interest: magnetorheological fluids and microbial biofilms. The operation of these sensors is based on the analysis of their resonant properties that vary in contact with the material to be analyzed. We have made a multi-frequency analysis, working in several modes of resonance of the transducer, in some applications even simultaneously (by impulse excitation). We reviewed some phenomena as the presence of micro-contacts on the sensor surface and the resonance of viscoelastic layers of finite thickness, which can affect quartz sensors contrary to the conventional theory predictions (Sauerbrey and Kanazawa), leading to positive resonant frequency shifts. In addition, we studied the effect of non-uniform deposition on the piezoelectric resonator. Polyurethane stools have been measured, being the resonator response to these depositions modeled by FEM. The numerical model allows studying the behavior of the resonator when different geometric variables (thickness, surface non-uniformity and deposition zone) of the deposited layer are modified. It has been shown that for thicknesses between a quarter and a half of a wavelength approximately, non-uniform deposits on the sensor surface amplify the positive increase of the resonance frequency displacement compared to a uniform layer. The geometric pattern of the sensor sensitivity was also analyzed, being also non-uniform over its surface. TSM sensors have been applied to study the viscoelastic changes occurring in various magneto-rheological fluids (FMR) when subjected to different controlled shear stresses driven by a rheometer. It has been seen that there is a direct relationship between various rheological parameters obtained with the rheometer (normal force, G', G'', stress, shear rate ...) and the acoustic parameters, being the FMR characterized both in the absence of magnetic field, and when the magnetic field was applied at different intensities. We have studied the advantages of this technique over the characterization methods based on commercial rheometers, noting that TSM sensors are more sensitive to some relevant aspects of the fluid as the deposition of particles (fluid stability), the breaking process of the structures formed in the FMR both in the presence and absence of magnetic field, and the rigidity of the micro-contacts appearing between particles and surfaces. TSM sensors have also been used to monitor in real time the formation of biofilms of Staphylococcus epidermidis and Escherichia coli on the quartz crystal resonators themselves without any coating, performing tests with strains having different ability to produce biofilm. It was shown that, once a first homogeneous adhesion of bacteria was produced on the substrate, the biofilm can be considered as a semi-infinite layer and the quartz sensor reflects only the viscoelastic properties of the region immediately adjacent to the resonator, not being sensitive to what is happening in upper layers of the biofilm. The experiments allow the evaluation of the biofilm complex stiffness module at various frequencies, showing that the characteristic parameter that indicates the adhesion of a biofilm for the case of both S. epidermidis and E. coli, is an increased G' (related to the elasticity or stiffness of the layer), which is linked to an increase in the resonance frequency of the sensor.

Wheel-Rail Contact Forces in High-Speed Simply Supported Bridges at Resonance

The response of high-speed bridges at resonance, particularly under flexural vibrations, constitutes a subject of research for many scientists and engineers at the moment. The topic is of great interest because, as a matter of fact, such kind of behaviour is not unlikely to happen due to the elevated operating speeds of modern rains, which in many cases are equal to or even exceed 300 km/h ( [1,2]). The present paper addresses the subject of the evolution of the wheel-rail contact forces during resonance situations in simply supported bridges. Based on a dimensionless formulation of the equations of motion presented in [4], very similar to the one introduced by Klasztorny and Langer in [3], a parametric study is conducted and the contact forces in realistic situations analysed in detail. The effects of rail and wheel irregularities are not included in the model. The bridge is idealised as an Euler-Bernoulli beam, while the train is simulated by a system consisting of rigid bodies, springs and dampers. The situations such that a severe reduction of the contact force could take place are identified and compared with typical situations in actual bridges. To this end, the simply supported bridge is excited at resonace by means of a theoretical train consisting of 15 equidistant axles. The mechanical characteristics of all axles (unsprung mass, semi-sprung mass, and primary suspension system) are identical. This theoretical train permits the identification of the key parameters having an influence on the wheel-rail contact forces. In addition, a real case of a 17.5 m bridges traversed by the Eurostar train is analysed and checked against the theoretical results. The influence of three fundamental parameters is investigated in great detail: a) the ratio of the fundamental frequency of the bridge and natural frequency of the primary suspension of the vehicle; b) the ratio of the total mass of the bridge and the semi-sprung mass of the vehicle and c) the ratio between the length of the bridge and the characteristic distance between consecutive axles. The main conclusions derived from the investigation are: The wheel-rail contact forces undergo oscillations during the passage of the axles over the bridge. During resonance, these oscillations are more severe for the rear wheels than for the front ones. If denotes the span of a simply supported bridge, and the characteristic distance between consecutive groups of loads, the lower the value of , the greater the oscillations of the contact forces at resonance. For or greater, no likelihood of loss of wheel-rail contact has been detected. The ratio between the frequency of the primary suspension of the vehicle and the fundamental frequency of the bridge is denoted by (frequency ratio), and the ratio of the semi-sprung mass of the vehicle (mass of the bogie) and the total mass of the bridge is denoted by (mass ratio). For any given frequency ratio, the greater the mass ratio, the greater the oscillations of the contact forces at resonance. The oscillations of the contact forces at resonance, and therefore the likelihood of loss of wheel-rail contact, present a minimum for approximately between 0.5 and 1. For lower or higher values of the frequency ratio the oscillations of the contact forces increase. Neglecting the possible effects of torsional vibrations, the metal or composite bridges with a low linear mass have been found to be the ones where the contact forces may suffer the most severe oscillations. If single-track, simply supported, composite or metal bridges were used in high-speed lines, and damping ratios below 1% were expected, the minimum contact forces at resonance could drop to dangerous values. Nevertheless, this kind of structures is very unusual in modern high-speed railway lines.

Electrostatic plasma instabilities excited by a high‐frequency electric field

The electrostatic plasma waves excited by a uniform, alternating electric field of arbitrary intensity are studied on the basis of the Vlasov equation; their dispersion relation, which involves the determinant of either of two infinite matrices, is derived. For ω0 ≫ ωpi (ω0 being the applied frequency and ωpi the ion plasma frequency) the waves may be classified in two groups, each satisfying a simple condition; this allows writing the dispersion relation in closed form. Both groups coalesce (resonance) if (a) ω0  ≈  ωpe/r (r any integer) and (b) the wavenumber k is small. A nonoscillatory instability is found; its distinction from the DuBois‐Goldman instability and its physical origin are discussed. Conditions for its excitation (in particular, upper limits to ω0,k, and k⋅vE,vE being the field‐induced electron velocity), and simple equations for the growth rate are given off‐resonance and at ω0  ≈  ωpi. The dependence of both threshold and maximum growth rate on various parameters is discussed, and the results are compared with those of Silin and Nishikawa. The threshold at ω0  ≈  ωpi/r,r  ≠  1, is studied.