A regular perturbation approach to surface tension driven flows

Surface tension induced convection in a liquid bridge held between two parallel, coaxial, solid disks is considered. The surface tension gradient is produced by a small temperature gradient parallel Co the undisturbed surface. The study is performed by using a mathematical regular perturbation approach based on a small parameter, e, which measures the deviation of the imposed temperature field from its mean value. The first order velocity field is given by a Stokes-type problem (viscous terms are dominant) with relatively simple boundary conditions. The first order temperature field is that imposed from the end disks on a liquid bridge immersed in a non-conductive fluid. Radiative effects are supposed to be negligible. The second order temperature field, which accounts for convective effects, is split into three components, one due to the bulk motion, and the other two to the distortion of the free surface. The relative importance of these components in terms of the heat transfer to or from the end disks is assessed

Results of the JET real-time disruption predictor in the ITER-like wall campaigns

The impact of disruptions in JET became even more important with the replacement of the previous Carbon Fiber Composite (CFC) wall with a more fragile full metal ITER-like wall (ILW). The development of robust disruption mitigation systems is crucial for JET (and also for ITER). Moreover, a reliable real-time (RT) disruption predictor is a pre-requisite to any mitigation method. The Advance Predictor Of DISruptions (APODIS) has been installed in the JET Real-Time Data Network (RTDN) for the RT recognition of disruptions. The predictor operates with the new ILW but it has been trained only with discharges belonging to campaigns with the CFC wall. 7 realtime signals are used to characterize the plasma status (disruptive or non-disruptive) at regular intervals of 1 ms. After the first 3 JET ILW campaigns (991 discharges), the success rate of the predictor is 98.36% (alarms are triggered in average 426 ms before the disruptions). The false alarm and missed alarm rates are 0.92% and 1.64%.

El ejercicio físico regular disminuye los niveles de depresión durante el embarazo. Ensayo clínico aleatorizado

El ejercicio físico regular disminuye los niveles de depresión durante el embarazo. Ensayo clínico aleatorizado

Numerical and experimental study of the parametric rolling of a fisihing vessel in regular head waves

The dynamic behaviour of a fishing vessel in waves is studied in order to reveal its parametric rolling characteristics. This paper presents experimental and numerical results in longitudinal regular waves. The experimental results are compared against the results of a time-domain non-linear strip theory model of ship motions in six degrees-of-freedom. These results contribute to the validation of the parametric rolling prediction method, so that it can be used as an assessment tool to evaluate both the susceptibility and severity of occurrence of parametric rolling at the early design stage of these types of vessels.

Surface fitting in geomorphology - examples for regular-shaped volcanic landforms

In nature, several types of landforms have simple shapes: as they evolve they tend to take on an ideal, simple geometric form such as a cone, an ellipsoid or a paraboloid. Volcanic landforms are possibly the best examples of this ?ideal? geometry, since they develop as regular surface features due to the point-like (circular) or fissure-like (linear) manifestation of volcanic activity. In this paper, we present a geomorphometric method of fitting the ?ideal? surface onto the real surface of regular-shaped volcanoes through a number of case studies (Mt. Mayon, Mt. Somma, Mt. Semeru, and Mt. Cameroon). Volcanoes with circular, as well as elliptical, symmetry are addressed. For the best surface fit, we use the minimization library MINUIT which is made freely available by the CERN (European Organization for Nuclear Research). This library enables us to handle all the available surface data (every point of the digital elevation model) in a one-step, half-automated way regardless of the size of the dataset, and to consider simultaneously all the relevant parameters of the selected problem, such as the position of the center of the edifice, apex height, and cone slope, thanks to the highly performing adopted procedure. Fitting the geometric surface, along with calculating the related error, demonstrates the twofold advantage of the method. Firstly, we can determine quantitatively to what extent a given volcanic landform is regular, i.e. how much it follows an expected regular shape. Deviations from the ideal shape due to degradation (e.g. sector collapse and normal erosion) can be used in erosion rate calculations. Secondly, if we have a degraded volcanic landform, whose geometry is not clear, this method of surface fitting reconstructs the original shape with the maximum precision. Obviously, in addition to volcanic landforms, this method is also capable of constraining the shapes of other regular surface features such as aeolian, glacial or periglacial landforms.

Desarrollo de un sistema de control por DSP para regular generadores sincronos de imanes permanentes

En el siguiente proyecto se va a llevar a cabo la simulación en la plataforma Matlb Simulink de una maquina síncrona de imanes permanentes (MSIP) en su funcionamiento como generador, emulando un aerogenerador con tecnología SGFC. El generador tendrá como variable de consigna la velocidad de giro del eje y se ajustara el sistema de control para que sea capaz de seguir la señal de consigna ante cambios bruscos del par. Posteriormente se va a detallar y construir todos los elementos que se consideren necesarios para, en proyectos futuros, llevar a la práctica en una maquina real este sistema de control ABSTRACT The object of this Project is to carry a simulation in Matlab Simulink of a synchronous permanent magnets machine (MSIP) in its operation as a generator, emulating a wind turbine technology SGFC. The variable setpoint will be the rotational speed of the shaft, the control system will fit so that it is capable of following the setpoint signal before sudden changes of the pair. Afterward the elements considered necessary for to put into practice this control system in a real machine will be detailed.

Atomistic modeling of Ge damage accumulation, amorphization and solid phase epitaxial regrowth

En los últimos años, el Ge ha ganado de nuevo atención con la finalidad de ser integrado en el seno de las existentes tecnologías de microelectrónica. Aunque no se le considera como un canddato capaz de reemplazar completamente al Si en el futuro próximo, probalemente servirá como un excelente complemento para aumentar las propiedades eléctricas en dispositivos futuros, especialmente debido a su alta movilidad de portadores. Esta integración requiere de un avance significativo del estado del arte en los procesos de fabricado. Técnicas de simulación, como los algoritmos de Monte Carlo cinético (KMC), proporcionan un ambiente atractivo para llevar a cabo investigación y desarrollo en este campo, especialmente en términos de costes en tiempo y financiación. En este estudio se han usado, por primera vez, técnicas de KMC con el fin entender el procesado “front-end” de Ge en su fabricación, específicamente la acumulación de dañado y amorfización producidas por implantación iónica y el crecimiento epitaxial en fase sólida (SPER) de las capas amorfizadas. Primero, simulaciones de aproximación de clisiones binarias (BCA) son usadas para calcular el dañado causado por cada ión. La evolución de este dañado en el tiempo se simula usando KMC sin red, o de objetos (OKMC) en el que sólamente se consideran los defectos. El SPER se simula a través de una aproximación KMC de red (LKMC), siendo capaz de seguir la evolución de los átomos de la red que forman la intercara amorfo/cristalina. Con el modelo de amorfización desarrollado a lo largo de este trabajo, implementado en un simulador multi-material, se pueden simular todos estos procesos. Ha sido posible entender la acumulación de dañado, desde la generación de defectos puntuales hasta la formación completa de capas amorfas. Esta acumulación ocurre en tres regímenes bien diferenciados, empezando con un ritmo lento de formación de regiones de dañado, seguido por una rápida relajación local de ciertas áreas en la fase amorfa donde ambas fases, amorfa y cristalina, coexisten, para terminar en la amorfización completa de capas extensas, donde satura el ritmo de acumulación. Dicha transición ocurre cuando la concentración de dañado supera cierto valor límite, el cual es independiente de las condiciones de implantación. Cuando se implantan los iones a temperaturas relativamente altas, el recocido dinámico cura el dañado previamente introducido y se establece una competición entre la generación de dañado y su disolución. Estos efectos se vuelven especialmente importantes para iones ligeros, como el B, el cual crea dañado más diluido, pequeño y distribuido de manera diferente que el causado por la implantación de iones más pesados, como el Ge. Esta descripción reproduce satisfactoriamente la cantidad de dañado y la extensión de las capas amorfas causadas por implantación iónica reportadas en la bibliografía. La velocidad de recristalización de la muestra previamente amorfizada depende fuertemente de la orientación del sustrato. El modelo LKMC presentado ha sido capaz de explicar estas diferencias entre orientaciones a través de un simple modelo, dominado por una única energía de activación y diferentes prefactores en las frecuencias de SPER dependiendo de las configuraciones de vecinos de los átomos que recristalizan. La formación de maclas aparece como una consecuencia de esta descripción, y es predominante en sustratos crecidos en la orientación (111)Ge. Este modelo es capaz de reproducir resultados experimentales para diferentes orientaciones, temperaturas y tiempos de evolución de la intercara amorfo/cristalina reportados por diferentes autores. Las parametrizaciones preliminares realizadas de los tensores de activación de tensiones son también capaces de proveer una buena correlación entre las simulaciones y los resultados experimentales de velocidad de SPER a diferentes temperaturas bajo una presión hidrostática aplicada. Los estudios presentados en esta tesis han ayudado a alcanzar un mejor entendimiento de los mecanismos de producción de dañado, su evolución, amorfización y SPER para Ge, además de servir como una útil herramienta para continuar el trabajo en este campo. In the recent years, Ge has regained attention to be integrated into existing microelectronic technologies. Even though it is not thought to be a feasible full replacement to Si in the near future, it will likely serve as an excellent complement to enhance electrical properties in future devices, specially due to its high carrier mobilities. This integration requires a significant upgrade of the state-of-the-art of regular manufacturing processes. Simulation techniques, such as kinetic Monte Carlo (KMC) algorithms, provide an appealing environment to research and innovation in the field, specially in terms of time and funding costs. In the present study, KMC techniques are used, for the first time, to understand Ge front-end processing, specifically damage accumulation and amorphization produced by ion implantation and Solid Phase Epitaxial Regrowth (SPER) of the amorphized layers. First, Binary Collision Approximation (BCA) simulations are used to calculate the damage caused by every ion. The evolution of this damage over time is simulated using non-lattice, or Object, KMC (OKMC) in which only defects are considered. SPER is simulated through a Lattice KMC (LKMC) approach, being able to follow the evolution of the lattice atoms forming the amorphous/crystalline interface. With the amorphization model developed in this work, implemented into a multi-material process simulator, all these processes can be simulated. It has been possible to understand damage accumulation, from point defect generation up to full amorphous layers formation. This accumulation occurs in three differentiated regimes, starting at a slow formation rate of the damage regions, followed by a fast local relaxation of areas into the amorphous phase where both crystalline and amorphous phases coexist, ending in full amorphization of extended layers, where the accumulation rate saturates. This transition occurs when the damage concentration overcomes a certain threshold value, which is independent of the implantation conditions. When implanting ions at relatively high temperatures, dynamic annealing takes place, healing the previously induced damage and establishing a competition between damage generation and its dissolution. These effects become specially important for light ions, as B, for which the created damage is more diluted, smaller and differently distributed than that caused by implanting heavier ions, as Ge. This description successfully reproduces damage quantity and extension of amorphous layers caused by means of ion implantation reported in the literature. Recrystallization velocity of the previously amorphized sample strongly depends on the substrate orientation. The presented LKMC model has been able to explain these differences between orientations through a simple model, dominated by one only activation energy and different prefactors for the SPER rates depending on the neighboring configuration of the recrystallizing atoms. Twin defects formation appears as a consequence of this description, and are predominant for (111)Ge oriented grown substrates. This model is able to reproduce experimental results for different orientations, temperatures and times of evolution of the amorphous/crystalline interface reported by different authors. Preliminary parameterizations for the activation strain tensors are able to also provide a good match between simulations and reported experimental results for SPER velocities at different temperatures under the appliance of hydrostatic pressure. The studies presented in this thesis have helped to achieve a greater understanding of damage generation, evolution, amorphization and SPER mechanisms in Ge, and also provide a useful tool to continue research in this field.