Integrated luminescent chemical microsensors based on GaN LEDs for security applications using smartphones

Development of PCB-integrateable microsensors for monitoring chemical species is a goal in areas such as lab-on-a-chip analytical devices, diagnostics medicine and electronics for hand-held instruments where the device size is a major issue. Cellular phones have pervaded the world inhabitants and their usefulness has dramatically increased with the introduction of smartphones due to a combination of amazing processing power in a confined space, geolocalization and manifold telecommunication features. Therefore, a number of physical and chemical sensors that add value to the terminal for health monitoring, personal safety (at home, at work) and, eventually, national security have started to be developed, capitalizing also on the huge number of circulating cell phones. The chemical sensor-enabled “super” smartphone provides a unique (bio)sensing platform for monitoring airborne or waterborne hazardous chemicals or microorganisms for both single user and crowdsourcing security applications. Some of the latest ones are illustrated by a few examples. Moreover, we have recently achieved for the first time (covalent) functionalization of p- and n-GaN semiconductor surfaces with tuneable luminescent indicator dyes of the Ru-polypyridyl family, as a key step in the development of innovative microsensors for smartphone applications. Chemical “sensoring” of GaN-based blue LED chips with those indicators has also been achieved by plasma treatment of their surface, and the micrometer-sized devices have been tested to monitor O2 in the gas phase to show their full functionality. Novel strategies to enhance the sensor sensitivity such as changing the length and nature of the siloxane buffer layer are discussed in this paper.

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 °C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission

Self-assembled MgxZn1−xO quantum dots (0 ≤ x ≤ 1) on different substrates using spray pyrolysis methodology

By using the spray pyrolysis methodology in its classical configuration we have grown self-assembled MgxZn1−xO quantum dots (size [similar]4–6 nm) in the overall range of compositions 0 ≤ x ≤ 1 on c-sapphire, Si (100) and quartz substrates. Composition of the quantum dots was determined by means of transmission electron microscopy-energy dispersive X-ray analysis (TEM-EDAX) and X-ray photoelectron spectroscopy. Selected area electron diffraction reveals the growth of single phase hexagonal MgxZn1−xO quantum dots with composition 0 ≤ x ≤ 0.32 by using a nominal concentration of Mg in the range 0 to 45%. Onset of Mg concentration about 50% (nominal) forces the hexagonal lattice to undergo a phase transition from hexagonal to a cubic structure which resulted in the growth of hexagonal and cubic phases of MgxZn1−xO in the intermediate range of Mg concentrations 50 to 85% (0.39 ≤ x ≤ 0.77), whereas higher nominal concentration of Mg ≥ 90% (0.81 ≤ x ≤ 1) leads to the growth of single phase cubic MgxZn1−xO quantum dots. High resolution transmission electron microscopy and fast Fourier transform confirm the results and show clearly distinguishable hexagonal and cubic crystal structures of the respective quantum dots. A difference of 0.24 eV was detected between the core levels (Zn 2p and Mg 1s) measured in quantum dots with hexagonal and cubic structures by X-ray photoemission. The shift of these core levels can be explained in the frame of the different coordination of cations in the hexagonal and cubic configurations. Finally, the optical absorption measurements performed on single phase hexagonal MgxZn1−xO QDs exhibited a clear shift in optical energy gap on increasing the Mg concentration from 0 to 40%, which is explained as an effect of substitution of Zn2+ by Mg2+ in the ZnO lattice.

Quantum metropolitan optical network based on wavelength division multiplexing

Quantum Key Distribution (QKD) is maturing quickly. However, the current approaches to its application in optical networks make it an expensive technology. QKD networks deployed to date are designed as a collection of point-to-point, dedicated QKD links where non-neighboring nodes communicate using the trusted repeater paradigm. We propose a novel optical network model in which QKD systems share the communication infrastructure by wavelength multiplexing their quantum and classical signals. The routing is done using optical components within a metropolitan area which allows for a dynamically any-to-any communication scheme. Moreover, it resembles a commercial telecom network, takes advantage of existing infrastructure and utilizes commercial components, allowing for an easy, cost-effective and reliable deployment.

Development of a versatile biotinylated material based on SU-8

The negative epoxy-based SU-8 photoresist has a wide variety of applications within the semiconductor industry, photonics and lab-on-a-chip devices, and it is emerging as an alternative to silicon-based devices for sensing purposes. In the present work, biotinylation of the SU-8 polymer surface promoted by light is reported. As a result, a novel, efective, and low-cost material, focusing on the immobilization of bioreceptors and consequent biosensing, is developed. This material allows the spatial discrimination depending on the irradiation of desired areas. The most salient feature is that the photobiotin may be directly incorporated into the SU-8 curing process, consequently reducing time and cost. The potential use of this substrate is demonstrated by the immunoanalytical detection of the synthetic steroid gestrinone, showing excellent performances. Moreover, the naked eye biodetection due to the transparent SU-8 substrate, and simple instrumental quantication are additional advantages.

Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars

This work reports on the growth of (In, Ga)N core−shell micro pillars by plasma-assisted molecular beam epitaxy using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template. Upon (In, Ga)N growth, core−shell structures with emission at around 3.0 eV are formed. Further, the fabrication of a core−shell pin structure is demonstrated.

Suitability of artificial neural networks for designing LoC circuits

he simulation of complex LoC (Lab-on-a-Chip) devices is a process that requires solving computationally expensive partial differential equations. An interesting alternative uses artificial neural networks for creating computationally feasible models based on MOR techniques. This paper proposes an approach that uses artificial neural networks for designing LoC components considering the artificial neural network topology as an isomorphism of the LoC device topology. The parameters of the trained neural networks are based on equations for modeling microfluidic circuits, analogous to electronic circuits. The neural networks have been trained to behave like AND, OR, Inverter gates. The parameters of the trained neural networks represent the features of LoC devices that behave as the aforementioned gates. This would mean that LoC devices universally compute.

Rotation-Induced Breakdown of Torsional Quantum Control

Control of the torsional angles of nonrigid molecules is key for the development of emerging areas like molecular electronics and nanotechnology. Based on a rigorous calculation of the rotation-torsion-Stark energy levels of nonrigid biphenyl-like molecules, we show that, unlike previously believed, instantaneous rotation-torsion-Stark eigenstates of such molecules, interacting with a strong laser field, present a large degree of delocalization in the torsional coordinate even for the lowest energy states. This is due to a strong coupling between overall rotation and torsion leading to a breakdown of the torsional alignment. Thus, adiabatic control of changes on the planarity of this kind of molecule is essentially impossible unless the temperature is on the order of a few Kelvin.

Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples.

Influence of the Second Flexural Mode on the Response of High-Speed Bridges

This paper deals with the assessment of the contribution of the second flexural mode to the dynamic behaviour of simply supported railway bridges. Alluding to the works of other authors, it is suggested in some references that the dynamic behaviour of simply supported bridges could be adequately represented taking into account only the contribution of the fundamental flexural mode. On the other hand, the European Rail Research Institute (ERRI) proposes that the second mode should also be included whenever the associated natural frequency is lower than 30 Hz]. This investigation endeavours to clarify the question as much as possible by establishing whether the maximum response of the bridge, in terms of displacements, accelerations and bending moments, can be computed accurately not taking account of the contribution of the second mode. To this end, a dimensionless formulation of the equations of motion of a simply supported beam traversed by a series of equally spaced moving loads is presented. This formulation brings to light the fundamental parameters governing the behaviour of the beam: damping ratio, dimensionless speed $ \alpha$=VT/L, and L/d ratio (L stands for the span of the beam, V for the speed of the train, T represents the fundamental period of the bridge and d symbolises the distance between consecutive loads). Assuming a damping ratio equal to 1%, which is a usual value for prestressed high-speed bridges, a parametric analysis is conducted over realistic ranges of values of $ \alpha$ and L/d. The results can be extended to any simply supported bridge subjected to a train of equally spaced loads in virtue of the so-called Similarity Formulae. The validity of these formulae can be derived from the dimensionless formulation mentioned above. In the parametric analysis the maximum response of the bridge is obtained for one thousand values of speed that cover the range from the fourth resonance of the first mode to the first resonance of the second mode. The response at twenty-one different locations along the span of the beam is compared in order to decide if the maximum can be accurately computed with the sole contribution of the fundamental mode.

A self-adaptive image processing application based on evolvable and scalable hardware

Evolvable Hardware (EH) is a technique that consists of using reconfigurable hardware devices whose configuration is controlled by an Evolutionary Algorithm (EA). Our system consists of a fully-FPGA implemented scalable EH platform, where the Reconfigurable processing Core (RC) can adaptively increase or decrease in size. Figure 1 shows the architecture of the proposed System-on-Programmable-Chip (SoPC), consisting of a MicroBlaze processor responsible of controlling the whole system operation, a Reconfiguration Engine (RE), and a Reconfigurable processing Core which is able to change its size in both height and width. This system is used to implement image filters, which are generated autonomously thanks to the evolutionary process. The system is complemented with a camera that enables the usage of the platform for real time applications.

Quantum communications in optical networks

La posibilidad de utilizar sistemas cuánticos para procesar y transmitir información ha impulsado la aparición de tecnologías de información cuántica, p. ej., distribución cuántica de claves. Aunque prometedoras, su uso fuera del laboratorio es actualmente demasiado costoso y complicado. En este trabajo mostramos como utilizarlas en redes ópticas de telecomunicaciones. Al utilizar una infraestructura existente y pervasiva, y compartirla con otras señales, tanto clásicas como cuánticas, el coste se reduce drásticamente y llega a un mayor público. Comenzamos integrando señales cuánticas en los tipos más utilizados de redes ópticas pasivas, por su simplicidad y alcance a usuarios finales. Luego ampliamos este estudio, proponiendo un diseño de red óptica metropolitana basado en la división en longitud de onda para multiplexar y direccionar las señales. Verificamos su funcionamiento con un prototipo. Posteriormente, estudiamos la distribución de pares de fotones entrelazados entre los usuarios de dicha red con el objetivo de abarcar más tecnologías. Para ampliar la capacidad de usuarios, rediseñamos la red troncal, cambiando tanto la topología como la tecnología utilizada en los nodos. El resultado es una red metropolitana cuántica que escala a cualquier cantidad de usuarios, a costa de una mayor complejidad y coste. Finalmente, tratamos el problema de la limitación en distancia. La solución propuesta está basada en codificación de red y permite, mediante el uso de varios caminos y nodos, modular la cantidad de información que tiene cada nodo, y así, la confianza depositada en él. ABSTRACT The potential use of quantum systems to process and transmit information has impulsed the emergence of quantum information technologies such as quantum key distribution. Despite looking promising, their use out of the laboratory is limited since they are a very delicate technology due to the need of working at the single quantum level. In this work we show how to use them in optical telecommunication networks. Using an existing infrastructure and sharing it with other signals, both quantum and conventional, reduces dramatically the cost and allows to reach a large group of users. In this work, we will first integrate quantum signals in the most common passive optical networks, for their simplicity and reach to final users. Then, we extend this study by proposing a quantum metropolitan optical network based on wavelength-division multiplexing and wavelengthaddressing, verifying its operation mode in a testbed. Later, we study the distribution of entangled photon-pairs between the users of the network with the objective of covering as much different technologies as possible. We further explore other network architectures, changing the topology and the technology used at the nodes. The resulting network scales better at the cost of a more complex and expensive infrastructure. Finally, we tackle the distance limitation problem of quantum communications. The solution offered is based on networkcoding and allows, using multiple paths and nodes, to modulate the information leaked to each node, and thus, the degree of trust placed in them.

Proposal for a Wavelength Multiplexed Quantum Metropolitan Area Network

Quantum Key Distribution (QKD) is maturing quickly. However, the current approaches to its network use require conditions that make it an expensive technology. All the QKD networks deployed to date are designed as a collection of dedicated point-to-point links that use the trusted repeater paradigm. Instead, we propose a novel network model in which QKD systems use simultaneously quantum and conventional signals that are wavelength multiplexed over a common communication infrastructure. Signals are transmitted end-to-end within a metropolitan area using optical components. The model resembles a commercial telecom network and takes advantage of existing components, thus allowing for a cost-effective and reliable deployment.

Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate

Transmission electron microscopy and spatially resolved electron energy-loss spectroscopy have been applied to investigate the indium distribution and the interface morphology in axial (In,Ga)N/GaN nanowire heterostructures. The ordered axial (In,Ga)N/GaN nanowire heterostructures with an indium concentration up to 80% are grown by molecular beam epitaxy on GaN-buffered Si(111) substrates. We observed a pronounced lattice pulling effect in all the nanowire samples given in a broad transition region at the interface. The lattice pulling effect becomes smaller and the (In,Ga)N/GaN interface width is reduced as the indium concentration is increased in the (In,Ga)N section. The result can be interpreted in terms of the increased plastic strain relaxation via the generation of the misfit dislocations at the interface.