Quantum key distribution based on selective post-processing in passive optical networks

One of the main obstacles to the widespread adoption of quantum cryptography has been the difficulty of integration into standard optical networks, largely due to the tremendous difference in power of classical signals compared with the single quantum used for quantum key distribution. This makes the technology expensive and hard to deploy. In this letter, we show an easy and straightforward integration method of quantum cryptography into optical access networks. In particular, we analyze how a quantum key distribution system can be seamlessly integrated in a standard access network based on the passive optical and time division multiplexing paradigms. The novelty of this proposal is based on the selective post-processing that allows for the distillation of secret keys avoiding the noise produced by other network users. Importantly, the proposal does not require the modification of the quantum or classical hardware specifications neither the use of any synchronization mechanism between the network and quantum cryptography devices.

Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation

Low optical degradation in GaInAsN(Sb)/GaAs quantum dots (QDs) p–i–n structures emitting up to 1.55 μm is presented in this paper. We obtain emission at different energies by means of varying N content from 1 to 4%. The samples show a low photoluminescence (PL) intensity degradation of only 1 order of magnitude when they are compared with pure InGaAs QD structures, even for an emission wavelength as large as 1.55 μm. The optimization studies of these structures for emission at 1.55 μm are reported in this work. High surface density and homogeneity in the QD layers are achieved for 50% In content by rapid decrease in the growth temperature after the formation of the nanostructures. Besides, the effect of N and Sb incorporation in the redshift and PL intensity of the samples is studied by post-growth rapid thermal annealing treatments. As a general conclusion, we observe that the addition of Sb to QD with low N mole fraction is more efficient to reach 1.55 μm and high PL intensity than using high N incorporation in the QD. Also, the growth temperature is determined to be an important parameter to obtain good emission characteristics. Finally, we report room temperature PL emission of InGaAsN(Sb)/GaAs at 1.4 μm.