Decelerator elements for ramp transfer points in fruit packing lines

Two different decelerator elements used to reduce impacts on fruits on ramp transfer points in fruit packing lines were designed and tested. The performance of these elements, a powered decelerator and a multiple curtain, was compared to commercial decelerators (blankets). A ramp of length 60 cm was placed at an angle of 30º in an experimental fruit packing line between a roller transporter and a conveyor. The decelerators were placed on top of the ramp. Different tests were carried out to study the performance of the decelerators using instrumented spheres (IS 100) of various sizes. Results showed that decelerators can reduce the impact intensity down to safe thresholds. The powered decelerator was the most effective because it reduced the speed of fruits and did not cause retention of the fruit, when correctly regulated.

Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability

AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

The Minimum Number of Points Taking Part in k-Sets in Sets of Unaligned Points

En este trabajo se da un ejemplo de un conjunto de n puntos situados en posición general, en el que se alcanza el mínimo número de puntos que pueden formar parte de algún k-set para todo k con 1menor que=kmenor quen/2. Se generaliza también, a puntos en posición no general, el resultado de Erdõs et al., 1973, sobre el mínimo número de puntos que pueden formar parte de algún k-set. The study of k- sets is a very relevant topic in the research area of computational geometry. The study of the maximum and minimum number of k-sets in sets of points of the plane in general position, specifically, has been developed at great length in the literature. With respect to the maximum number of k-sets, lower bounds for this maximum have been provided by Erdõs et al., Edelsbrunner and Welzl, and later by Toth. Dey also stated an upper bound for this maximum number of k-sets. With respect to the minimum number of k-set, this has been stated by Erdos el al. and, independently, by Lovasz et al. In this paper the authors give an example of a set of n points in the plane in general position (no three collinear), in which the minimum number of points that can take part in, at least, a k-set is attained for every k with 1 ≤ k < n/2. The authors also extend Erdos’s result about the minimum number of points in general position which can take part in a k-set to a set of n points not necessarily in general position. That is why this work complements the classic works we have mentioned before.