Calculation Methodology and Fabrication Procedures for Particle Accelerator Strip-Line Kickers: Application to the CTF3 Combiner Ring Extraction Kicker and TL2 Tail Clippers

A particle accelerator is any device that, using electromagnetic fields, is able to communicate energy to charged particles (typically electrons or ionized atoms), accelerating and/or energizing them up to the required level for its purpose. The applications of particle accelerators are countless, beginning in a common TV CRT, passing through medical X-ray devices, and ending in large ion colliders utilized to find the smallest details of the matter. Among the other engineering applications, the ion implantation devices to obtain better semiconductors and materials of amazing properties are included. Materials supporting irradiation for future nuclear fusion plants are also benefited from particle accelerators. There are many devices in a particle accelerator required for its correct operation. The most important are the particle sources, the guiding, focalizing and correcting magnets, the radiofrequency accelerating cavities, the fast deflection devices, the beam diagnostic mechanisms and the particle detectors. Most of the fast particle deflection devices have been built historically by using copper coils and ferrite cores which could effectuate a relatively fast magnetic deflection, but needed large voltages and currents to counteract the high coil inductance in a response in the microseconds range. Various beam stability considerations and the new range of energies and sizes of present time accelerators and their rings require new devices featuring an improved wakefield behaviour and faster response (in the nanoseconds range). This can only be achieved by an electromagnetic deflection device based on a transmission line. The electromagnetic deflection device (strip-line kicker) produces a transverse displacement on the particle beam travelling close to the speed of light, in order to extract the particles to another experiment or to inject them into a different accelerator. The deflection is carried out by the means of two short, opposite phase pulses. The diversion of the particles is exerted by the integrated Lorentz force of the electromagnetic field travelling along the kicker. This Thesis deals with a detailed calculation, manufacturing and test methodology for strip-line kicker devices. The methodology is then applied to two real cases which are fully designed, built, tested and finally installed in the CTF3 accelerator facility at CERN (Geneva). Analytical and numerical calculations, both in 2D and 3D, are detailed starting from the basic specifications in order to obtain a conceptual design. Time domain and frequency domain calculations are developed in the process using different FDM and FEM codes. The following concepts among others are analyzed: scattering parameters, resonating high order modes, the wakefields, etc. Several contributions are presented in the calculation process dealing specifically with strip-line kicker devices fed by electromagnetic pulses. Materials and components typically used for the fabrication of these devices are analyzed in the manufacturing section. Mechanical supports and connexions of electrodes are also detailed, presenting some interesting contributions on these concepts. The electromagnetic and vacuum tests are then analyzed. These tests are required to ensure that the manufactured devices fulfil the specifications. Finally, and only from the analytical point of view, the strip-line kickers are studied together with a pulsed power supply based on solid state power switches (MOSFETs). The solid state technology applied to pulsed power supplies is introduced and several circuit topologies are modelled and simulated to obtain fast and good flat-top pulses.

Análisis y diseño de un patrón de ruido térmico de 10 MHz a 26,5 GHz en tecnología coaxial

Esta Tesis Doctoral presenta las investigaciones y los trabajos desarrollados durante los años 2008 a 2012 para el análisis y diseño de un patrón primario de ruido térmico de banda ancha en tecnología coaxial. Para ubicar esta Tesis en su campo científico es necesario tomar conciencia de que la realización de mediciones fiables y trazables forma parte del sostenimiento del bienestar de una sociedad moderna y juega un papel crítico en apoyo de la competitividad económica, la fabricación y el comercio, así como de la calidad de vida. En el mundo moderno actual, una infraestructura de medición bien desarrollada genera confianza en muchas facetas de nuestra vida diaria, porque nos permite el desarrollo y fabricación de productos fiables, innovadores y de alta calidad; porque sustenta la competitividad de las industrias y su producción sostenible; además de contribuir a la eliminación de barreras técnicas y de dar soporte a un comercio justo, garantizar la seguridad y eficacia de la asistencia sanitaria, y por supuesto, dar respuesta a los grandes retos de la sociedad moderna en temas tan complicados como la energía y el medio ambiente. Con todo esto en mente se ha desarrollado un patrón primario de ruido térmico con el fin de aportar al sistema metrológico español un nuevo patrón primario de referencia capaz de ser usado para desarrollar mediciones fiables y trazables en el campo de la medida y calibración de dispositivos de ruido electromagnético de radiofrecuencia y microondas. Este patrón se ha planteado para que cumpla en el rango de 10 MHz a 26,5 GHz con las siguientes especificaciones: Salida nominal de temperatura de ruido aproximada de ~ 83 K. Incertidumbre de temperatura de ruido menor que ± 1 K en todo su rango de frecuencias. Coeficiente de reflexión en todo su ancho de banda de 0,01 a 26,5 GHz lo más bajo posible. Se ha divido esta Tesis Doctoral en tres partes claramente diferenciadas. La primera de ellas, que comprende los capítulos 1, 2, 3, 4 y 5, presenta todo el proceso de simulaciones y ajustes de los parámetros principales del dispositivo con el fin de dejar definidos los que resultan críticos en su construcción. A continuación viene una segunda parte compuesta por el capítulo 6 en donde se desarrollan los cálculos necesarios para obtener la temperatura de ruido a la salida del dispositivo. La tercera y última parte, capítulo 7, se dedica a la estimación de la incertidumbre de la temperatura de ruido del nuevo patrón primario de ruido obtenida en el capítulo anterior. Más concretamente tenemos que en el capítulo 1 se hace una exhaustiva introducción del entorno científico en donde se desarrolla este trabajo de investigación. Además se detallan los objetivos que se persiguen y se presenta la metodología utilizada para conseguirlos. El capítulo 2 describe la caracterización y selección del material dieléctrico para el anillo del interior de la línea de transmisión del patrón que ponga en contacto térmico los dos conductores del coaxial para igualar las temperaturas entre ambos y mantener la impedancia característica de todo el patrón primario de ruido. Además se estudian las propiedades dieléctricas del nitrógeno líquido para evaluar su influencia en la impedancia final de la línea de transmisión. En el capítulo 3 se analiza el comportamiento de dos cargas y una línea de aire comerciales trabajando en condiciones criogénicas. Se pretende con este estudio obtener la variación que se produce en el coeficiente de reflexión al pasar de temperatura ambiente a criogénica y comprobar si estos dispositivos resultan dañados por trabajar a temperaturas criogénicas; además se estudia si se modifica su comportamiento tras sucesivos ciclos de enfriamiento – calentamiento, obteniendo una cota de la variación para poder así seleccionar la carga que proporcione un menor coeficiente de reflexión y una menor variabilidad. En el capítulo 4 se parte del análisis de la estructura del anillo de material dieléctrico utilizada en la nota técnica NBS 1074 del NIST con el fin de obtener sus parámetros de dispersión que nos servirán para calcular el efecto que produce sobre el coeficiente de reflexión de la estructura coaxial completa. Además se realiza un estudio posterior con el fin de mejorar el diseño de la nota técnica NBS 1074 del NIST, donde se analiza el anillo de material dieléctrico, para posteriormente realizar modificaciones en la geometría de la zona donde se encuentra éste con el fin de reducir la reflexión que produce. Concretamente se estudia el ajuste del radio del conductor interior en la zona del anillo para que presente la misma impedancia característica que la línea. Y para finalizar se obtiene analíticamente la relación entre el radio del conductor interior y el radio de la transición de anillo térmico para garantizar en todo punto de esa transición la misma impedancia característica, manteniendo además criterios de robustez del dispositivo y de fabricación realistas. En el capítulo 5 se analiza el comportamiento térmico del patrón de ruido y su influencia en la conductividad de los materiales metálicos. Se plantean las posibilidades de que el nitrógeno líquido sea exterior a la línea o que éste penetre en su interior. En ambos casos, dada la simetría rotacional del problema, se ha simulado térmicamente una sección de la línea coaxial, es decir, se ha resuelto un problema bidimensional, aunque los resultados son aplicables a la estructura real tridimensional. Para la simulación térmica se ha empleado la herramienta PDE Toolbox de Matlab®. En el capítulo 6 se calcula la temperatura de ruido a la salida del dispositivo. Se parte del estudio de la aportación a la temperatura de ruido final de cada sección que compone el patrón. Además se estudia la influencia de las variaciones de determinados parámetros de los elementos que conforman el patrón de ruido sobre las características fundamentales de éste, esto es, el coeficiente de reflexión a lo largo de todo el dispositivo. Una vez descrito el patrón de ruido electromagnético se procede, en el capítulo 7, a describir los pasos seguidos para estimar la incertidumbre de la temperatura de ruido electromagnético a su salida. Para ello se utilizan dos métodos, el clásico de la guía para la estimación de la incertidumbre [GUM95] y el método de simulación de Monte Carlo. En el capítulo 8 se describen las conclusiones y lo logros conseguidos. Durante el desarrollo de esta Tesis Doctoral se ha obtenido un dispositivo novedoso susceptible de ser patentado, que ha sido registrado en la Oficina Española de Patentes y Marcas (O.E.P.M.) en Madrid, de conformidad con lo establecido en el artículo 20 de la Ley 11/1986, de 20 de Marzo, de Patentes, con el título Patrón Primario de Ruido Térmico de Banda Ancha (Referencia P-101061) con fecha 7 de febrero de 2011. ABSTRACT This Ph. D. work describes a number of investigations that were performed along the years 2008 to 2011, as a preparation for the study and design of a coaxial cryogenic reference noise standard. Reliable and traceable measurement underpins the welfare of a modern society and plays a critical role in supporting economic competitiveness, manufacturing and trade as well as quality of life. In our modern world, a well developed measurement infrastructure gives confidence in many aspects of our daily life, for example by enabling the development and manufacturing of reliable, high quality and innovative products; by supporting industry to be competitive and sustainable in its production; by removing technical barriers to trade and supporting fair trade; by ensuring safety and effectiveness of healthcare; by giving response to the major challenges in key sectors such energy and environment, etc. With all this in mind we have developed a primary standard thermal noise with the aim of providing the Spanish metrology system with a new primary standard for noise reference. This standard will allow development of reliable and traceable measurements in the field of calibration and measurement of electromagnetic noise RF and microwave devices. This standard has been designed to work in the frequency range from 10 MHz to 26.5 GHz, meeting the following specifications: 1. Noise temperature output is to be nominally ~ 83 K. 2. Noise temperature uncertainty less than ± 1 K in the frequency range from 0.01 to 26.5 GHz. 3. Broadband performance requires as low a reflection coefficient as possible from 0.01 to 26.5 GHz. The present Ph. D. work is divided into three clearly differentiated parts. The first one, which comprises Chapters 1 to 5, presents the whole process of simulation and adjustment of the main parameters of the device in order to define those of them which are critical for the manufacturing of the device. Next, the second part consists of Chapter 6 where the necessary computations to obtain the output noise temperature of the device are carried out. The third and last part, Chapter 7, is devoted to the estimation of the uncertainty related to the noise temperature of the noise primary standard as obtained in the preceding chapter. More specifically, Chapter 1 provides a thorough introduction to the scientific and technological environment where this research takes place. It also details the objectives to be achieved and presents the methodology used to achieve them. Chapter 2 describes the characterization and selection of the bead dielectric material inside the transmission line, intended to connect the two coaxial conductors equalizing the temperature between the two of them and thus keeping the characteristic impedance constant for the whole standard. In addition the dielectric properties of liquid nitrogen are analyzed in order to assess their influence on the impedance of the transmission line. Chapter 3 analyzes the behavior of two different loads and of a commercial airline when subjected to cryogenic working conditions. This study is intended to obtain the variation in the reflection coefficient when the temperature changes from room to cryogenic temperature, and to check whether these devices can be damaged as a result of working at cryogenic temperatures. Also we try to see whether the load changes its behavior after successive cycles of cooling / heating, in order to obtain a bound for the allowed variation of the reflection coefficient of the load. Chapter 4 analyzes the ring structure of the dielectric material used in the NBS technical note 1074 of NIST, in order to obtain its scattering parameters that will be used for computation of its effect upon the reflection coefficient of the whole coaxial structure. Subsequently, we perform a further investigation with the aim of improving the design of NBS technical note 1074 of NIST, and modifications are introduced in the geometry of the transition area in order to reduce the reflection it produces. We first analyze the ring, specifically the influence of the radius of inner conductor of the bead, and then make changes in its geometry so that it presents the same characteristic impedance as that of the line. Finally we analytically obtain the relationship between the inner conductor radius and the radius of the transition from ring, in order to ensure the heat flow through the transition thus keeping the same reflection coefficient, and at the same time meeting the robustness requirements and the feasibility of manufacturing. Chapter 5 analyzes the thermal behavior of the noise standard and its influence on the conductivity of metallic materials. Both possibilities are raised that the liquid nitrogen is kept outside the line or that it penetrates inside. In both cases, given the rotational symmetry of the structure, we have simulated a section of coaxial line, i.e. the equivalent two-dimensional problem has been resolved, although the results are applicable to the actual three-dimensional structure. For thermal simulation Matlab™ PDE Toolbox has been used. In Chapter 6 we compute the output noise temperature of the device. The starting point is the analysis of the contribution to the overall noise temperature of each section making up the standard. Moreover the influence of the variations in the parameters of all elements of the standard is analyzed, specifically the variation of the reflection coefficient along the entire device. Once the electromagnetic noise standard has been described and analyzed, in Chapter 7 we describe the steps followed to estimate the uncertainty of the output electromagnetic noise temperature. This is done using two methods, the classic analytical approach following the Guide to the Estimation of Uncertainty [GUM95] and numerical simulations made with the Monte Carlo method. Chapter 8 discusses the conclusions and achievements. During the development of this thesis, a novel device was obtained which was potentially patentable, and which was finally registered through the Spanish Patent and Trademark Office (SPTO) in Madrid, in accordance with the provisions of Article 20 of Law 11/1986 about Patents, dated March 20th, 1986. It was registered under the denomination Broadband Thermal Noise Primary Standard (Reference P-101061) dated February 7th, 2011.

Simulación, construcción y medida de un sistema de telealimentación eficiente

Los sistemas de telealimentación han tomado gran importancia en diferentes campos, incluido el de las telecomunicaciones, algunos ejemplos pueden ser: En la red conmutada telefónica junto con la señal de información y llamada existe una alimentación de 48v que se transmite a través de toda la línea de transmisión hasta los terminales. En algunos ferrocarriles eléctricos, se aprovecha la producción de energía eléctrica cuando un tren baja una cuesta y el motor funciona como generador, devolviendo la energía excedente a la propia catenaria por medio de superposición, y siendo esta recuperada en otro lugar y aprovechada por ejemplo por otro tren que requiere energía. Otro uso en ferrocarriles de la telealimentación es la llamada "tecnología del transpondedor magnético", en la que el tren transmite a las balizas una señal en 27MHz además de otras de información propias, que se convierte en energía útil para estas balizas. En este proyecto pretendemos implementar un pequeño ejemplo de sistema de telealimentación trabajando en 5 MHz (RF). Este sistema transforma una señal de CC en una señal de potencia de CA que podría ser, por ejemplo, transmitida a lo largo de una línea de transmisión o radiada por medio de una antena. Después, en el extremo receptor, esta señal RF se transforma finalmente en DC. El objetivo es lograr el mejor rendimiento de conversión de energía, DC a AC y AC a DC. El sistema se divide en dos partes: El inversor, que es la cadena de conversión DC-AC y el rectificador, que es la cadena de conversión AC-DC. Cada parte va a ser calculada, simulada, implementada físicamente y medida aparte. Finalmente el sistema de telealimentación completo se va a medir mediante la interconexión de cada parte por medio de un adaptador o una línea de transmisión. Por último, se mostrarán los resultados obtenidos. ABSTRACT. Remote powering systems have become very important in different fields, including telecommunications, some examples include: In the switched telephone network with the information signal and call there is a 48v supply that is transmitted across the transmission line to the terminals. In some electric railways, the production of electrical energy is used when a train is coming down a hill and the motor acts as a generator, returning the surplus energy to the catenary itself by overlapping, and this being recovered elsewhere and used by other train. Home TV amplifiers that are located in places (storage, remote locations ..) where there is no outlet, remote power allows to carry information and power signal by the same physical medium, for instance a coax. The AC power signal is transformed into DC at the end to feed the amplifier. In medicine, photovoltaic converters and fiber optics can be used as means for feeding devices implanted in patients. Another use of the remote powering systems on railways is the "magnetic transponder technology", in which the station transmits a beacon signal at 27MHz own as well as other information, which is converted into useful energy to these beacons. In this Project we are pretending to implement a little example of remote powering system working in 5 MHz (RF). This system transform DC into an AC-RF power signal which could be, for instance, transmitted throughout a transmission line or radiated by means of an aerial. At the receiving end, this RF signal is then transformed to DC. The objective is to achieve the best power conversion performance, DC to AC and AC to DC. The system is divided in two parts: The inverter, that is the DC-AC conversion chain and the rectifier that is the AC-DC conversion chain. Each part is going to be calculated, simulated, implemented physically and measured apart. Then the complete remote-powering system is to be measured by interconnecting each part by means of a interconnector or a transmission line. Finally, obtained results will be shown.

New methods to reduce leakage errors in planar near-field measurements

This paper describes two methods to cancel the effect of two kinds of leakage signals which may be presented when an antenna is measured in a planar near-field range. One method tries to reduce leakage bias errors from the receiver¿s quadrature detector and it is based on estimating the bias constant added to every near-field data sample. Then, that constant is subtracted from the data, removing its undesired effect on the far-field pattern. The estimation is performed by back-propagating the field from the scan plane to the antenna under test plane (AUT) and averaging all the data located outside the AUT aperture. The second method is able to cancel the effect of the leakage from faulty transmission lines, connectors or rotary joints. The basis of this method is also a reconstruction process to determine the field distribution on the AUT plane. Once this distribution is known, a spatial filtering is applied to cancel the contribution due to those faulty elements. After that, a near-field-to-far-field transformation is applied, obtaining a new radiation pattern where the leakage effects have disappeared. To verify the effectiveness of both methods, several examples are presented.

Modular Planar Antenna at X-band for satellite communications

An antenna which has been conceived as a portable system for satellite communications based on the recommendations ITU-R S.580-6 [1] and ITU-R S.465-5 [2] for small antennas, i.e., with a diameter lower than 50 wavelengths, is introduced. It is a planar and a compact structure with a size of 40×40×2 cm. The antenna is formed by an array of 256 printed elements covering a large bandwidth (14.7%) at X-Band. The specification includes transmission (Tx) and reception (Rx) bands simultaneously. The printed antenna has a radiation pattern with a 3dB beamwidth of 5°, over a 31dBi gain, and a dual and an interchangeable circular polarization

Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy

Molecular beam epitaxy growth of ten-period lattice-matched InAlN/GaN distributed Bragg reflectors (DBRs) with peak reflectivity centered around 400nm is reported including optical and transmission electron microscopy (TEM) measurements [1]. Good periodicity heterostructures with crack-free surfaces were confirmed, but, also a significant residual optical absorption below the bandgap was measured. The TEM characterization ascribes the origin of this problem to polymorfism and planar defects in the GaN layers and to the existence of an In-rich layer at the InAlN/GaN interfaces. In this work, several TEM based techniques have been combined.

Technical developments for computed tomography on the CENBG nanobeam line

The use of ion microbeams as probes for computedtomography has proven to be a powerful tool for the three-dimensional characterization of specimens a few tens of micrometers in size. Compared to other types of probes, the main advantage is that quantitative information about mass density and composition can be obtained directly, using specific reconstruction codes. At the Centre d’Etudes Nucléaires de Bordeaux Gradignan (CENBG), this technique was initially developed for applications in cellular biology. However, the observation of the cell ultrastructure requires a sub-micron resolution. The construction of the nanobeamline at the Applications Interdisciplinaires des Faisceaux d’Ions en Region Aquitaine (AIFIRA) irradiation facility has opened new perspectives for such applications. The implementation of computedtomography on the nanobeamline of CENBG has required a careful design of the analysis chamber, especially microscopes for precise sample visualization, and detectors for scanning transmission ion microscopy (STIM) and for particle induced X-ray emission (PIXE). The sample can be precisely positioned in the three directions X, Y, Z and a stepper motor coupled to a goniometer ensures the rotational motion. First images of 3D tomography were obtained on a reference sample containing microspheres of certified diameter, showing the good stability of the beam and the sample stage, and the precision of the motion.

Hybrid Contribution of JPEG200 Video Files for Professional Production Centers Reliability and Non-Reliability Transmission File Based in Image Quality Needed

ATM, SDH or satellite have been used in the last century as the contribution network of Broadcasters. However the attractive price of IP networks is changing the infrastructure of these networks in the last decade. Nowadays, IP networks are widely used, but their characteristics do not offer the level of performance required to carry high quality video under certain circumstances. Data transmission is always subject to errors on line. In the case of streaming, correction is attempted at destination, while on transfer of files, retransmissions of information are conducted and a reliable copy of the file is obtained. In the latter case, reception time is penalized because of the low priority this type of traffic on the networks usually has. While in streaming, image quality is adapted to line speed, and line errors result in a decrease of quality at destination, in the file copy the difference between coding speed vs line speed and errors in transmission are reflected in an increase of transmission time. The way news or audiovisual programs are transferred from a remote office to the production centre depends on the time window and the type of line available; in many cases, it must be done in real time (streaming), with the resulting image degradation. The main purpose of this work is the workflow optimization and the image quality maximization, for that reason a transmission model for multimedia files adapted to JPEG2000, is described based on the combination of advantages of file transmission and those of streaming transmission, putting aside the disadvantages that these models have. The method is based on two patents and consists of the safe transfer of the headers and data considered to be vital for reproduction. Aside, the rest of the data is sent by streaming, being able to carry out recuperation operations and error concealment. Using this model, image quality is maximized according to the time window. In this paper, we will first give a briefest overview of the broadcasters requirements and the solutions with IP networks. We will then focus on a different solution for video file transfer. We will take the example of a broadcast center with mobile units (unidirectional video link) and regional headends (bidirectional link), and we will also present a video file transfer file method that satisfies the broadcaster requirements.

Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications

El objetivo de este trabajo es un estudio profundo del crecimiento selectivo de nanoestructuras de InGaN por epitaxia de haces moleculares asistido por plasma, concentrandose en el potencial de estas estructuras como bloques constituyentes en LEDs de nueva generación. Varias aproximaciones al problema son discutidas; desde estructuras axiales InGaN/GaN, a estructuras core-shell, o nanoestructuras crecidas en sustratos con orientaciones menos convencionales (semi polar y no polar). La primera sección revisa los aspectos básicos del crecimiento auto-ensamblado de nanocolumnas de GaN en sustratos de Si(111). Su morfología y propiedades ópticas son comparadas con las de capas compactas de GaN sobre Si(111). En el caso de las columnas auto-ensambladas de InGaN sobre Si(111), se presentan resultados sobre el efecto de la temperatura de crecimiento en la incorporación de In. Por último, se discute la inclusión de nanodiscos de InGaN en las nanocolumnas de GaN. La segunda sección revisa los mecanismos básicos del crecimiento ordenado de nanoestructuras basadas en GaN, sobre templates de GaN/zafiro. Aumentando la relación III/V localmente, se observan cambios morfológicos; desde islas piramidales, a nanocolumnas de GaN terminadas en planos semipolares, y finalmente, a nanocolumnas finalizadas en planos c polares. Al crecer nanodiscos de InGaN insertados en las nanocolumnas de GaN, las diferentes morfologias mencionadas dan lugar a diferentes propiedades ópticas de los nanodiscos, debido al diferente carácter (semi polar o polar) de los planos cristalinos involucrados. La tercera sección recoge experimentos acerca de los efectos que la temperatura de crecimiento y la razón In/Ga tienen en la morfología y emisión de nanocolumnas ordenadas de InGaN crecidas sobre templates GaN/zafiro. En el rango de temperaturas entre 650 y 750 C, la incorporacion de In puede modificarse bien por la temperatura de crecimiento, o por la razón In/Ga. Controlar estos factores permite la optimización de la longitud de onda de emisión de las nanocolumnas de InGaN. En el caso particular de la generación de luz blanca, se han seguidos dos aproximaciones. En la primera, se obtiene emisión amarilla-blanca a temperatura ambiente de nanoestructuras donde la región de InGaN consiste en un gradiente de composiciones de In, que se ha obtenido a partir de un gradiente de temperatura durante el crecimiento. En la segunda, el apilamiento de segmentos emitiendo en azul, verde y rojo, consiguiendo la integración monolítica de estas estructuras en cada una de las nanocolumnas individuales, da lugar a emisores ordenados con un amplio espectro de emisión. En esta última aproximación, la forma espectral puede controlarse con la longitud (duración del crecimiento) de cada uno de los segmentos de InGaN. Más adelante, se presenta el crecimiento ordenado, por epitaxia de haces moleculares, de arrays de nanocolumnas que son diodos InGaN/GaN cada una de ellas, emitiendo en azul (441 nm), verde (502 nm) y amarillo (568 nm). La zona activa del dispositivo consiste en una sección de InGaN, de composición constante nominalmente y longitud entre 250 y 500 nm, y libre de defectos extendidos en contraste con capas compactas de InGaN de similares composiciones y espesores. Los espectros de electroluminiscencia muestran un muy pequeño desplazamiento al azul al aumentar la corriente inyectada (desplazamiento casi inexistente en el caso del dispositivo amarillo), y emisiones ligeramente más anchas que en el caso del estado del arte en pozos cuánticos de InGaN. A continuación, se presenta y discute el crecimiento ordenado de nanocolumnas de In(Ga)N/GaN en sustratos de Si(111). Nanocolumnas ordenadas emitiendo desde el ultravioleta (3.2 eV) al infrarrojo (0.78 eV) se crecieron sobre sustratos de Si(111) utilizando una capa compacta (“buffer”) de GaN. La morfología y eficiencia de emisión de las nanocolumnas emitiendo en el rango espectral verde pueden ser mejoradas ajustando las relaciones In/Ga y III/N, y una eficiencia cuántica interna del 30% se deriva de las medidas de fotoluminiscencia en nanocolumnas optimizadas. En la siguiente sección de este trabajo se presenta en detalle el mecanismo tras el crecimiento ordenado de nanocolumnas de InGaN/GaN emitiendo en el verde, y sus propiedades ópticas. Nanocolumnas de InGaN/GaN con secciones largas de InGaN (330-830 nm) se crecieron tanto en sustratos GaN/zafiro como GaN/Si(111). Se encuentra que la morfología y la distribución espacial del In dentro de las nanocolumnas dependen de las relaciones III/N e In/Ga locales en el frente de crecimiento de las nanocolumnas. La dispersión en el contenido de In entre diferentes nanocolumnas dentro de la misma muestra es despreciable, como indica las casi identicas formas espectrales de la catodoluminiscencia de una sola nanocolumna y del conjunto de ellas. Para las nanocolumnas de InGaN/GaN crecidas sobre GaN/Si(111) y emitiendo en el rango espectral verde, la eficiencia cuántica interna aumenta hasta el 30% al disminuir la temperatura de crecimiento y aumentar el nitrógeno activo. Este comportamiento se debe probablemente a la formación de estados altamente localizados, como indica la particular evolución de la energía de fotoluminiscencia con la temperatura (ausencia de “s-shape”) en muestras con una alta eficiencia cuántica interna. Por otro lado, no se ha encontrado la misma dependencia entre condiciones de crecimiento y efiencia cuántica interna en las nanoestructuras InGaN/GaN crecidas en GaN/zafiro, donde la máxima eficiencia encontrada ha sido de 3.7%. Como alternativa a las nanoestructuras axiales de InGaN/GaN, la sección 4 presenta resultados sobre el crecimiento y caracterización de estructuras core-shell de InGaN/GaN, re-crecidas sobre arrays de micropilares de GaN fabricados por ataque de un template GaN/zafiro (aproximación top-down). El crecimiento de InGaN/GaN es conformal, con componentes axiales y radiales en el crecimiento, que dan lugar a la estructuras core-shell con claras facetas hexagonales. El crecimiento radial (shell) se ve confirmado por medidas de catodoluminiscencia con resolución espacial efectuadas en un microscopio electrónico de barrido, asi como por medidas de microscopía de transmisión de electrones. Más adelante, el crecimiento de micro-pilares core-shell de InGaN se realizó en pilares GaN (cores) crecidos selectivamente por epitaxia de metal-orgánicos en fase vapor. Con el crecimiento de InGaN se forman estructuras core-shell con emisión alrededor de 3 eV. Medidas de catodoluminiscencia resuelta espacialmente indican un aumento en el contenido de indio del shell en dirección a la parte superior del pilar, que se manifiesta en un desplazamiento de la emisión de 3.2 eV en la parte inferior, a 3.0 eV en la parte superior del shell. Este desplazamiento está relacionado con variaciones locales de la razón III/V en las facetas laterales. Finalmente, se demuestra la fabricación de una estructura pin basada en estos pilares core-shell. Medidas de electroluminiscencia resuelta espacialmente, realizadas en pilares individuales, confirman que la electroluminiscencia proveniente del shell de InGaN (diodo lateral) está alrededor de 3.0 eV, mientras que la emisión desde la parte superior del pilar (diodo axial) está alrededor de 2.3 eV. Para finalizar, se presentan resultados sobre el crecimiento ordenado de GaN, con y sin inserciones de InGaN, en templates semi polares (GaN(11-22)/zafiro) y no polares (GaN(11-20)/zafiro). Tras el crecimiento ordenado, gran parte de los defectos presentes en los templates originales se ven reducidos, manifestándose en una gran mejora de las propiedades ópticas. En el caso de crecimiento selectivo sobre templates con orientación GaN(11-22), no polar, la formación de nanoestructuras con una particular morfología (baja relación entre crecimiento perpedicular frente a paralelo al plano) permite, a partir de la coalescencia de estas nanoestructuras, la fabricación de pseudo-templates no polares de GaN de alta calidad. ABSTRACT The aim of this work is to gain insight into the selective area growth of InGaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs. Several nanocolumn-based approaches such as standard axial InGaN/GaN structures, InGaN/GaN core-shell structures, or InGaN/GaN nanostructures grown on semi- and non-polar substrates are discussed. The first section reviews the basics of the self-assembled growth of GaN nanocolumns on Si(111). Morphology differences and optical properties are compared to those of GaN layer grown directly on Si(111). The effects of the growth temperature on the In incorporation in self-assembled InGaN nanocolumns grown on Si(111) is described. The second section reviews the basic growth mechanisms of selectively grown GaNbased nanostructures on c-plane GaN/sapphire templates. By increasing the local III/V ratio morphological changes from pyramidal islands, to GaN nanocolumns with top semi-polar planes, and further to GaN nanocolumns with top polar c-planes are observed. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semipolar and polar nature of the crystal planes involved. The third section reports on the effect of the growth temperature and In/Ga ratio on the morphology and light emission characteristics of ordered InGaN nanocolumns grown on c-plane GaN/sapphire templates. Within the growth temperature range of 650 to 750oC the In incorporation can be modified either by the growth temperature, or the In/Ga ratio. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength. In order to achieve white light emission two approaches are used. First yellow-white light emission can be obtained at room temperature from nanostructures where the InGaN region is composition-graded by using temperature gradients during growth. In a second approach the stacking of red, green and blue emitting segments was used to achieve the monolithic integration of these structures in one single InGaN nanocolumn leading to ordered broad spectrum emitters. With this approach, the spectral shape can be controlled by changing the thickness of the respective InGaN segments. Furthermore the growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN layers (planar) of similar composition and thickness. Electroluminescence spectra show a very small blue shift with increasing current, (almost negligible in the yellow device) and line widths slightly broader than those of state-of-the-art InGaN quantum wells. Next the selective area growth of In(Ga)N/GaN nanocolumns on Si(111) substrates is discussed. Ordered In(Ga)N/GaN nanocolumns emitting from ultraviolet (3.2 eV) to infrared (0.78 eV) were then grown on top of GaN-buffered Si substrates. The morphology and the emission efficiency of the In(Ga)N/GaN nanocolumns emitting in the green could be substantially improved by tuning the In/Ga and total III/N ratios, where an estimated internal quantum efficiency of 30 % was derived from photoluminescence data. In the next section, this work presents a study on the selective area growth mechanisms of green-emitting InGaN/GaN nanocolumns and their optical properties. InGaN/GaN nanocolumns with long InGaN sections (330-830nm) were grown on GaN/sapphire and GaN-buffered Si(111). The nanocolumn’s morphology and spatial indium distribution is found to depend on the local group (III)/N and In/Ga ratios at the nanocolumn’s top. A negligible spread of the average indium incorporation among different nanostructures is found as indicated by similar shapes of the cathodoluminescence spectra taken from single nanocolumns and ensembles of nanocolumns. For InGaN/GaN nanocolumns grown on GaN-buffered Si(111), all emitting in the green spectral range, the internal quantum efficiency increases up to 30% when decreasing growth temperature and increasing active nitrogen. This behavior is likely due to the formation of highly localized states, as indicated by the absence of a complete s-shape behavior of the PL peak position with temperature (up to room temperature) in samples with high internal quantum efficiency. On the other hand, no dependence of the internal quantum efficiency on the growth conditions is found for InGaN/GaN nanostructures grown on GaN/sapphire, where the maximum achieved efficiency is 3.7%. As alternative to axial InGaN/GaN nanostructures, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods etched from a GaN/sapphire template. Growth of InGaN/GaN is conformal, with axial and radial growth components leading to core-shell structures with clear hexagonal facets. The radial InGaN growth (shell) is confirmed by spatially resolved cathodoluminescence performed in a scanning electron microscopy as well as in scanning transmission electron microscopy. Furthermore the growth of InGaN core-shell micro pillars using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template is demonstrated. Upon InGaN overgrowth core-shell structures with emission at around 3.0 eV are formed. With spatially resolved cathodoluminescence, an increasing In content towards the pillar top is found to be present in the InGaN shell, as indicated by a shift of CL peak position from 3.2 eV at the shell bottom to 3.0 eV at the shell top. This shift is related to variations of the local III/V ratio at the side facets. Further, the successful fabrication of a core-shell pin diode structure is demonstrated. Spatially resolved electroluminescence measurements performed on individual micro LEDs, confirm emission from the InGaN shell (lateral diode) at around 3.0 eV, as well as from the pillar top facet (axial diode) at around 2.3 eV. Finally, this work reports on the selective area growth of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the GaN templates is strongly reduced as indicated by TEM and a dramatic improvement of the optical properties. In case of SAG on non-polar (11-22) templates the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of the nanostructures.