Mono-crystalline silicon wafers manufactured by casting methods: Optoelectronic, structural and solar cell study

1) Introduction 2) The Quasi-mono, pseudo-mono, mono-like ERA. 3) Manufacturing mono-cast ingots: COST (seed recycling) 4) Summary and findings 5) Current status at DCWafers

Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence

High-resolution monochromated electron energy loss spectroscopy (EELS) at subnanometric spatial resolution and <200 meV energy resolution has been used to assess the valence band properties of a distributed Bragg reflector multilayer heterostructure composed of InAlN lattice matched to GaN. This work thoroughly presents the collection of methods and computational tools put together for this task. Among these are zero-loss-peak subtraction and nonlinear fitting tools, and theoretical modeling of the electron scattering distribution. EELS analysis allows retrieval of a great amount of information: indium concentration in the InAlN layers is monitored through the local plasmon energy position and calculated using a bowing parameter version of Vegard Law. Also a dielectric characterization of the InAlN and GaN layers has been performed through Kramers-Kronig analysis of the Valence-EELS data, allowing band gap energy to be measured and an insight on the polytypism of the GaN layers.

Monitoring leafy vegetables through packaging films with

Fresh-cut or minimally processed fruit and vegetables have been physically modified from its original form (by peeling, trimming, washing and cutting) to obtain a 100% edible product that is subsequently packaged (usually under modified atmosphere packaging –MAP) and kept in refrigerated storage. In fresh-cut products, physiological activity and microbiological spoilage, determine their deterioration and shelf-life. The major preservation techniques applied to delay spoilage are chilling storage and MAP, combined with chemical treatments antimicrobial solutions antibrowning, acidulants, antioxidants, etc.). The industry looks for safer alternatives. Consequently, the sector is asking for innovative, fast, cheap and objective techniques to evaluate the overall quality and safety of fresh-cut products in order to obtain decision tools for implementing new packaging materials and procedures. In recent years, hyperspectral imaging technique has been regarded as a tool for analyses conducted for quality evaluation of food products in research, control and industries. The hyperspectral imaging system allows integrating spectroscopic and imaging techniques to enable direct identification of different components or quality characteristics and their spatial distribution in the tested sample. The objective of this work is to develop hyperspectral image processing methods for the supervision through plastic films of changes related to quality deterioration in packed readyto-use leafy vegetables during shelf life. The evolutions of ready-to-use spinach and watercress samples covered with three different common transparent plastic films were studied. Samples were stored at 4 ºC during the monitoring period (until 21 days). More than 60 hyperspectral images (from 400 to 1000 nm) per species were analyzed using ad hoc routines and commercial toolboxes of MatLab®. Besides common spectral treatments for removing additive and multiplicative effects, additional correction, previously to any other correction, was performed in the images of leaves in order to avoid the modification in their spectra due to the presence of the plastic transparent film. Findings from this study suggest that the developed images analysis system is able to deal with the effects caused in the images by the presence of plastic films in the supervision of shelf-life in leafy vegetables, in which different stages of quality has been identified.

Packaging and testing of fiber Bragg gratings for use as strain sensor for rock specimens

This paper reports a packaging and calibration procedure for surface mounting of fiber Bragg grating (FBG) sensors to measure strain in rocks. The packaging of FBG sensors is performed with glass fiber and polyester resin, and then subjected to tensile loads in order to obtain strength and deformability parameters, necessaries to assess the mechanical performance of the sensor packaging. For a specific package, an optimal curing condition has been found, showing good repeatability and adaptability for non-planar surfaces, such as occurs in rock engineering. The successfully packaged sensors and electrical strain gages were attached to standard rock specimens of gabbro. Longitudinal and transversal strains under compression loads were measured with both techniques, showing that response of FBG sensors is linear and reliable. An analytical model is used to characterize the influences of rock substrate and FBG packaging in strain transmission. As a result, we obtained a sensor packaging for non-planar and complex natural material under acceptable sensitivity suitable for very small strains as occurs in hard rocks.

Estudio teórico de propiedades termodinámicas y optoelectronicas de nuevos materiales fotovoltaicos de banda intermedia = Theoretical study of thermodynamic and optoelectronic properties of new intermediate band photovoltaic materials

Los materiales de banda intermedia han atraido la atención de la comunidad científica en el campo de la energía solar fotovoltaica en los últimos años. Sin embargo, con el objetivo de entender los fundamentos de las células solares de banda intermedia, se debe llevar a cabo un estudio profundo de la características de los materiales. Esto se puede hacer mediante un modelo teórico usando Primeros Principios. A partir de este enfoque se pueden obtener resultados tales como la estructura electrónica y propiedades ópticas, entre otras, de los semiconductores fuertemente dopados y sus precursores. Con el fin de desentrañar las estructuras de estos sistemas electrónicos, esta tesis presenta un estudio termodinámico y optoelectrónico de varios materiales fotovoltaicos. Específicamente se caracterizaron los materiales avanzados de banda intermedia y sus precursores. El estudio se hizo en términos de caracterización teórica de la estructura electrónica, la energética del sistema, entre otros. Además la estabilidad se obtuvo usando configuraciones adaptadas a la simetría del sistema y basado en la combinatoria. Las configuraciones de los sitios ocupados por defectos permiten obtener información sobre un espacio de configuraciones donde las posiciones de los dopantes sustituidos se basan en la simetría del sólido cristalino. El resultado puede ser tratado usando elementos de termodinámica estadística y da información de la estabilidad de todo el espacio simétrico. Además se estudiaron otras características importantes de los semiconductores de base. En concreto, el análisis de las interacciones de van der Waals fueron incluidas en el semiconductor en capas SnS2, y el grado de inversión en el caso de las espinelas [M]In2S4. En este trabajo además realizamos una descripción teórica exhaustiva del sistema CdTe:Bi. Este material de banda-intermedia muestra características que son distintas a las de los otros materiales estudiados. También se analizó el Zn como agente modulador de la posición de las sub-bandas prohibidas en el material de banda-intermedia CuGaS2:Ti. Analizándose además la viabilidad termodinámica de la formación de este compuesto. Finalmente, también se describió el GaN:Cr como material de banda intermedia, en la estructura zinc-blenda y en wurtztite, usando configuraciones de sitios ocupados de acuerdo a la simetría del sistema cristalino del semiconductor de base. Todos los resultados, siempre que fue posible, fueron comparados con los resultados experimentales. ABSTRACT The intermediate-band materials have attracted the attention of the scientific community in the field of the photovoltaics in recent years. Nevertheless, in order to understand the intermediate-band solar cell fundamentals, a profound study of the characteristics of the materials is required. This can be done using theoretical modelling from first-principles. The electronic structure and optical properties of heavily doped semiconductors and their precursor semiconductors are, among others, results that can be obtained from this approach. In order to unravel the structures of these crystalline systems, this thesis presents a thermodynamic and optoelectronic study of several photovoltaic materials. Specifically advanced intermediate-band materials and their precursor semiconductors were characterized. The study was made in terms of theoretical characterization of the electronic structure, energetics among others. The stability was obtained using site-occupancy-disorder configurations adapted to the symmetry of the system and based on combinatorics. The site-occupancy-disorder method allows the formation of a configurational space of substitutional dopant positions based on the symmetry of the crystalline solid. The result, that can be treated using statistical thermodynamics, gives information of the stability of the whole space of symmetry of the crystalline lattice. Furthermore, certain other important characteristics of host semiconductors were studied. Specifically, the van der Waal interactions were included in the SnS2 layered semiconductor, and the inversion degree in cases of [M]In2S4 spinels. In this work we also carried out an exhaustive theoretical description of the CdTe:Bi system. This intermediate-band material shows characteristics that are distinct from those of the other studied intermediate-band materials. In addition, Zn was analysed as a modulator of the positions of the sub-band gaps in the CuGaS2:Ti intermediate-band material. The thermodynamic feasibility of the formation of this compound was also carried out. Finally GaN:Cr intermediate-band material was also described both in the zinc-blende and the wurtztite type structures, using the symmetry-adapted-space of configurations. All results, whenever possible, were compared with experimental results.

Optoelectronic tweezers under arbitrary illumination patterns: theoretical simulations and comparison to experiment

Photovoltaic tweezers are a promising tool to place and move particles on the surface of a photovoltaic material in a controlled way. To exploit this new technique it is necessary to accurately know the electric field created by a specific illumination on the surface of the crystal and above it. This paper describes a numerical algorithm to obtain this electric field generated by several relevant light patterns, and uses them to calculate the electrophoretic potential acting over neutral, polarizable particles in the proximity of the crystal. The results are compared to experiments carried out in LiNbO3 with good overall agreement.

Optoelectronic property analysis of MCrO4 (M=Ba, Sr) with a response to visible light irradiation

Ternary MCrO4 (M = Ba, Sr) semiconductors are materials with a variety of photocatalyst and optoelectronic applications. We present detailed microscopic analyses based on first principles of the structure, the electronic properties and the optical absorption in which the difference between symmetrically non-equivalent atoms has been considered. The high absorption coefficients of these materials are split into chemical species contributions in accordance with the symmetry. The high optical absorption in these materials is mainly because of the Cr–O inter-species transitions.

Generalized optoelectronic model of series-connected multijunction solar cells

The emission of light from each junction in a series-connected multijunction solar cell both complicates and elucidates the understanding of its performance under arbitrary conditions. Bringing together many recent advances in this understanding, we present a general 1-D model to describe luminescent coupling that arises from both voltage-driven electroluminescence and voltage-independent photoluminescence in nonideal junctions that include effects such as Sah-Noyce-Shockley (SNS) recombination with n ≠ 2, Auger recombination, shunt resistance, reverse-bias breakdown, series resistance, and significant dark area losses. The individual junction voltages and currents are experimentally determined from measured optical and electrical inputs and outputs of the device within the context of the model to fit parameters that describe the devices performance under arbitrary input conditions. Techniques to experimentally fit the model are demonstrated for a four-junction inverted metamorphic solar cell, and the predictions of the model are compared with concentrator flash measurements.