Revisiting the Classics to recover the Physical Sense in electrical noise

This paper shows a physically cogent model for electrical noise in resistors that has been obtained from Thermodynamical reasons. This new model derived from the works of Johnson and Nyquist also agrees with the Quantum model for noisy systems handled by Callen and Welton in 1951, thus unifying these two Physical viewpoints. This new model is a Complex or 2-D noise model based on an Admittance that considers both Fluctuation and Dissipation of electrical energy to excel the Real or 1-D model in use that only considers Dissipation. By the two orthogonal currents linked with a common voltage noise by an Admittance function, the new model is shown in frequency domain. Its use in time domain allows to see the pitfall behind a paradox of Statistical Mechanics about systems considered as energy-conserving and deterministic on the microscale that are dissipative and unpredictable on the macroscale and also shows how to use properly the Fluctuation-Dissipation Theorem.

Momentum distributions from three-body decaying 9Be and 9B resonances

The complex-rotated hyperspherical adiabatic method is used to study the decay of lowlying 9Be and 9B resonances into α, α and n or p. We consider six low-lying resonances of 9Be (1/2±, 3/2± and 5/2±) and one resonance of 9B (5/2−) to compare with. The properties of the resonances at large distances are decisive for the momentum distributions of the three decaying fragments. Systematic detailed energy correlations of Dalitz plots are presented.

On the Absence of Carrier Drift in Two-Terminal Devices and the Origin of Their Lowest Resistance per Carrier RK= h/q^2

After a criticism on today’s model for electrical noise in resistors, we pass to use a Quantum-compliant model based on the discreteness of electrical charge in a complex Admittance. From this new model we show that carrier drift viewed as charged particle motion in response to an electric field is unlike to occur in bulk regions of Solid-State devices where carriers react as dipoles against this field. The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum resistance RK/(2pi)