Contribución a los modelos de gestión de las redes móviles ad hoc

La capacidad de comunicación de los seres humanos ha crecido gracias a la evolución de dispositivos móviles cada vez más pequeños, manejables, potentes, de mayor autonomía y más asequibles. Esta tendencia muestra que en un futuro próximo cercano cada persona llevaría consigo por lo menos un dispositivo de altas prestaciones. Estos dispositivos tienen incorporados algunas formas de comunicación: red de telefonía, redes inalámbricas, bluetooth, entre otras. Lo que les permite también ser empleados para la configuración de redes móviles Ad Hoc. Las redes móviles Ad Hoc, son redes temporales y autoconfigurables, no necesitan un punto de acceso para que los nodos intercambien información entre sí. Cada nodo realiza las tareas de encaminador cuando sea requerido. Los nodos se pueden mover, cambiando de ubicación a discreción. La autonomía de estos dispositivos depende de las estrategias de como sus recursos son utilizados. De tal forma que los protocolos, algoritmos o modelos deben ser diseñados de forma eficiente para no impactar el rendimiento del dispositivo, siempre buscando un equilibrio entre sobrecarga y usabilidad. Es importante definir una gestión adecuada de estas redes especialmente cuando estén siendo utilizados en escenarios críticos como los de emergencias, desastres naturales, conflictos bélicos. La presente tesis doctoral muestra una solución eficiente para la gestión de redes móviles Ad Hoc. La solución contempla dos componentes principales: la definición de un modelo de gestión para redes móviles de alta disponibilidad y la creación de un protocolo de enrutamiento jerárquico asociado al modelo. El modelo de gestión propuesto, denominado High Availability Management Ad Hoc Network (HAMAN), es definido en una estructura de cuatro niveles, acceso, distribución, inteligencia e infraestructura. Además se describen los componentes de cada nivel: tipos de nodos, protocolos y funcionamiento. Se estudian también las interfaces de comunicación entre cada componente y la relación de estas con los niveles definidos. Como parte del modelo se diseña el protocolo de enrutamiento Ad Hoc, denominado Backup Cluster Head Protocol (BCHP), que utiliza como estrategia de encaminamiento el empleo de cluster y jerarquías. Cada cluster tiene un Jefe de Cluster que concentra la información de enrutamiento y de gestión y la envía al destino cuando esta fuera de su área de cobertura. Para mejorar la disponibilidad de la red el protocolo utiliza un Jefe de Cluster de Respaldo el que asume las funciones del nodo principal del cluster cuando este tiene un problema. El modelo HAMAN es validado a través de un proceso la simulación del protocolo BCHP. El protocolo BCHP se implementa en la herramienta Network Simulator 2 (NS2) para ser simulado, comparado y contrastado con el protocolo de enrutamiento jerárquico Cluster Based Routing Protocol (CBRP) y con el protocolo de enrutamiento Ad Hoc reactivo denominado Ad Hoc On Demand Distance Vector Routing (AODV). Abstract The communication skills of humans has grown thanks to the evolution of mobile devices become smaller, manageable, powerful, more autonomy and more affordable. This trend shows that in the near future each person will carry at least one high-performance device. These high-performance devices have some forms of communication incorporated: telephony network, wireless networks, bluetooth, among others. What can also be used for configuring mobile Ad Hoc networks. Ad Hoc mobile networks, are temporary and self-configuring networks, do not need an access point for exchange information between their nodes. Each node performs the router tasks as required. The nodes can move, change location at will. The autonomy of these devices depends on the strategies of how its resources are used. So that the protocols, algorithms or models should be designed to efficiently without impacting device performance seeking a balance between overhead and usability. It is important to define appropriate management of these networks, especially when being used in critical scenarios such as emergencies, natural disasters, wars. The present research shows an efficient solution for managing mobile ad hoc networks. The solution comprises two main components: the definition of a management model for highly available mobile networks and the creation of a hierarchical routing protocol associated with the model. The proposed management model, called High Availability Management Ad Hoc Network (HAMAN) is defined in a four-level structure: access, distribution, intelligence and infrastructure. The components of each level: types of nodes, protocols, structure of a node are shown and detailed. It also explores the communication interfaces between each component and the relationship of these with the levels defined. The Ad Hoc routing protocol proposed, called Backup Cluster Head Protocol( BCHP), use of cluster and hierarchies like strategies. Each cluster has a cluster head which concentrates the routing information and management and sent to the destination when out of cluster coverage area. To improve the availability of the network protocol uses a Backup Cluster Head who assumes the functions of the node of the cluster when it has a problem. The HAMAN model is validated accross the simulation of their BCHP routing protocol. BCHP protocol has been implemented in the simulation tool Network Simulator 2 (NS2) to be simulated, compared and contrasted with a hierarchical routing protocol Cluster Based Routing Protocol (CBRP) and a routing protocol called Reactive Ad Hoc On Demand Distance Vector Routing (AODV).

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

High-brightness all semiconductor laser at 1.57 µm for space-borne lidar measurements of atmospheric carbon dioxide: device design and analysis of requirements

The availability of suitable laser sources is one of the main challenges in future space missions for accurate measurement of atmospheric CO2. The main objective of the European project BRITESPACE is to demonstrate the feasibility of an all-semiconductor laser source to be used as a space-borne laser transmitter in an Integrated Path Differential Absorption (IPDA) lidar system. We present here the proposed transmitter and system architectures, the initial device design and the results of the simulations performed in order to estimate the source requirements in terms of power, beam quality, and spectral properties to achieve the required measurement accuracy. The laser transmitter is based on two InGaAsP/InP monolithic Master Oscillator Power Amplifiers (MOPAs), providing the ON and OFF wavelengths close to the selected absorption line around 1.57 µm. Each MOPA consists of a frequency stabilized Distributed Feedback (DFB) master oscillator, a modulator section, and a tapered semiconductor amplifier optimized to maximize the optical output power. The design of the space-compliant laser module includes the beam forming optics and the thermoelectric coolers.The proposed system replaces the conventional pulsed source with a modulated continuous wave source using the Random Modulation-Continuous Wave (RM-CW) approach, allowing the designed semiconductor MOPA to be applicable in such applications. The system requirements for obtaining a CO2 retrieval accuracy of 1 ppmv and a spatial resolution of less than 10 meters have been defined. Envelope estimated of the returns indicate that the average power needed is of a few watts and that the main noise source is the ambient noise.

Triple-Junction Solar Cells for Ultra-High Concentrator Applications

After the successful implementation of a record performing dual-junction solar cell at ultra high concentration, in this paper we present the transition to a triple-junction device. The semiconductor structure of the solar cells is presented and the main changes in respect to a dual-junction design are briefly discussed. Cross-sectional TEM analysis of samples confirms that the quality of the triple-junction structures grown by MOVPE is good, revealing no trace of antiphase disorder, and showing flat, sharp and clear interfaces between the layers. Triple-junction solar cells manufactured on these structures have shown a peak efficiency of 36.2% at 700X, maintaining the efficiency over 35% from 300 to 1200 suns. With some changes in the structure and a fine tuning of its processing, efficiencies close to 40% at 1000 suns are envisaged.

Performance of a transmutation advanced device for sustainable energy application

Preliminary studies have been performed to design a device for nuclear waste transmutation and hydrogen generation based on a gas-cooled pebble bed accelerator driven system, TADSEA (Transmutation Advanced Device for Sustainable Energy Application). In previous studies we have addressed the viability of an ADS Transmutation device that uses as fuel wastes from the existing LWR power plants, encapsulated in graphite in the form of pebble beds, cooled by helium which enables high temperatures (in the order of 1200 K), to generate hydrogen from water either by high temperature electrolysis or by thermochemical cycles. For designing this device several configurations were studied, including several reflectors thickness, to achieve the desired parameters, the transmutation of nuclear waste and the production of 100 MW of thermal power. In this paper new studies performed on deep burn in-core fuel management strategy for LWR waste are presented. The fuel cycle on TADSEA device has been analyzed based on both: driven and transmutation fuel that had been proposed by the General Atomic design of a gas turbine-modular helium reactor. The transmutation results of the three fuel management strategies, using driven, transmutation and standard LWR spent fuel were compared, and several parameters describing the neutron performance of TADSEA nuclear core as the fuel and moderator temperature reactivity coefficients and transmutation chain, are also presented

High-level languages for small devices: A case study

In this paper we study, through a concrete case, the feasibility of using a high-level, general-purpose logic language in the design and implementation of applications targeting wearable computers. The case study is a "sound spatializer" which, given real-time signáis for monaural audio and heading, generates stereo sound which appears to come from a position in space. The use of advanced compile-time transformations and optimizations made it possible to execute code written in a clear style without efñciency or architectural concerns on the target device, while meeting strict existing time and memory constraints. The final executable compares favorably with a similar implementation written in C. We believe that this case is representative of a wider class of common pervasive computing applications, and that the techniques we show here can be put to good use in a range of scenarios. This points to the possibility of applying high-level languages, with their associated flexibility, conciseness, ability to be automatically parallelized, sophisticated compile-time tools for analysis and verification, etc., to the embedded systems field without paying an unnecessary performance penalty.

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

An n(++)-GaAs/p(++)-AlGaAs tunnel junction with a peak current density of 10 100Acm(-2) is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500Acm(-2) and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations.

High precision pressure sensors based on SAW devices in the GHz range

In this paper, an AlN/free-standing nanocrystalline diamond (NCD) system is proposed in order to process high frequency surface acoustic wave (SAW) resonators for sensing applications. The main problem of synthetic diamond is its high surface roughness that worsens the sputtered AlN quality and hence the device response. In order to study the feasibility of this structure, AlN films from 150 nm up to 1200 nm thick have been deposited on free-standing NCD. We have then analysed the influence of the AlN layer thickness on its crystal quality and device response. Optimized thin films of 300 nm have been used to fabricate of one-port SAW resonators operating in the 10–14 GHz frequency range. A SAW based sensor pressure with a sensibility of 0.33 MHz/bar has been fabricated.

High-peak-power pulse generation from a monolithic master oscillator power amplifier at 1.5 μm

We present an experimental study on the generation of high-peak-power short optical pulses from a fully integrated master-oscillator power-amplifier emitting at 1.5 μm. High-peak-power (2.7 W) optical pulses with short duration (100 ps) have been generated by gain switching the master oscillator under optimized driving conditions. The static and dynamic characteristics of the device have been studied as a function of the driving conditions. The ripples appearing in the power-current characteristics under cw conditions have been attributed to mode hopping between the master oscillator resonant mode and the Fabry-Perot modes of the entire device cavity. Although compound cavity effects have been evidenced to affect the static and dynamic performance of the device, we have demonstrated that trains of single-mode short optical pulses at gigahertz frequencies can be conveniently generated in these devices.

High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing

The photoluminescence efficiency of GaAsSb-capped InAs/GaAs type II quantum dots (QDs) can be greatly enhanced by rapid thermal annealing while preserving long radiative lifetimes which are ∼20 times larger than in standard GaAs-capped InAs/GaAs QDs. Despite the reduced electron-hole wavefunction overlap, the type-II samples are more efficient than the type-I counterparts in terms of luminescence, showing a great potential for device applications. Strain-driven In-Ga intermixing during annealing is found to modify the QD shape and composition, while As-Sb exchange is inhibited, allowing to keep the type-II structure. Sb is only redistributed within the capping layer giving rise to a more homogeneous composition.

Primary optics for efficient high-brightness LED color mixing

In SSL general illumination, there is a clear trend to high flux packages with higher efficiency and higher CRI addressed with the use of multiple color chips and phosphors. However, such light sources require the optics provide color mixing, both in the near-field and far-field. This design problem is specially challenging for collimated luminaries, in which diffusers (which dramatically reduce the brightness) cannot be applied without enlarging the exit aperture too much. In this work we present first injection molded prototypes of a novel primary shell-shaped optics that have microlenses on both sides to provide Köhler integration. This shell is design so when it is placed on top of an inhomogeneous multichip Lambertian LED, creates a highly homogeneous virtual source (i.e, spatially and angularly mixed), also Lambertian, which is located in the same position with only small increment of the size (about 10-20%, so the average brightness is similar to the brightness of the source). This shell-mixer device is very versatile and permits now to use a lens or a reflector secondary optics to collimate the light as desired, without color separation effects. Experimental measurements have shown optical efficiency of the shell of 95%, and highly homogeneous angular intensity distribution of collimated beams, in good agreement with the ray-tracing simulations.

Nanotechnology for high frequency communications: nitrides and graphene

The achievement of higher frequencies (HF) and the reduction of energy consumption, to improve sensing, communication and computation, involve the continued scaling down to the nanometer level. This scaling is enabled by of innovative device designs, improved processing technologies and assessment tools, and new material structures. In this work, we have used all these factors to demonstrate state-of-the-art HF devices in two materials with quite different electronic properties: wide semiconductor bandgap III-nitrides for resonators and power amplifiers; and graphene, a zero bandgap material expected to revolutionize low noise and HF flexible electronics. Some issues faced during their development will be discussed during the talk.

High-efficiency voltage regulator and stabilizer for outdoor lighting installations

This paper presents a high performance system of regulation and stabilization of luminous flux for public street lighting installations. Its purpose is to reduce the luminous flux of the luminaries efficiently by reducing their voltage supply, resulting in the improvement of energy efficiency in the installation. The system is basically composed of electromagnetic components which provide robustness and high-performance to the device, as well as minimum maintenance requirements. However, the voltage regulation is based on the application of voltage steps. Aging studies of the luminaries have been carried out to analyze the impact of this discrete voltage regulation. A specific prototype of this voltage and stabilizer regulator have been in operation in a real outdoor lighting installation for more than one year.

Structural challenges in multijunction solar cells for ultra-high CPV

The paths towards high efficiency multijunction solar cells operating inside real concentrators at ultra high concentration (>1000 suns) are described. The key addressed factors comprehend: 1) the development of an optimized tunnel junction with a high peak current density (240 A/cm2) to mitigate the non-uniform light profiles created by concentrators, 2) the inclusion of highly conductive semiconductor lateral layers to minimize the effects of the non-uniform light profiles in general, and the chromatic aberration in particular; and 3) an adequate design of reliability studies to test multijunction solar cells for real operation conditions in order to determine the fragile parts in the device and improve them. These challenges are faced by means of experimental and theoretical investigation using a quasi-3D distributed circuital model.

Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators

AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric film is one of the key parameters. On the other hand, the film material quality and, hence, the device performance, also depend on that thickness. In this work, polished microcrystalline diamond substrates have been used to deposit AlN films by reactive sputtering, from 150 nm up to 3 μm thick. A high degree of the c-axis orientation has been obtained in all cases. SAW one port resonators at high frequency have been fabricated on these films with a proper combination of the film thickness and transducer size.