A Fluctuation-Dissipation Model for Electrical Noise

This paper shows that today’s modelling of electrical noise as coming from noisy resistances is a non sense one contradicting their nature as systems bearing an electrical noise. We present a new model for electrical noise that including Johnson and Nyquist work also agrees with the Quantum Mechanical description of noisy systems done by Callen and Welton, where electrical energy fluctuates and is dissipated with time. By the two currents the Admittance function links in frequency domain with their common voltage, this new model shows the connection Cause-Effect that exists between Fluctuation and Dissipation of energy in time domain. In spite of its radical departure from today’s belief on electrical noise in resistors, this Complex model for electrical noise is obtained from Nyquist result by basic concepts of Circuit Theory and Thermo- dynamics that also apply to capacitors and inductors.

Revisiting the Classics to recover the Physical Sense in electrical noise

This paper shows a physically cogent model for electrical noise in resistors that has been obtained from Thermodynamical reasons. This new model derived from the works of Johnson and Nyquist also agrees with the Quantum model for noisy systems handled by Callen and Welton in 1951, thus unifying these two Physical viewpoints. This new model is a Complex or 2-D noise model based on an Admittance that considers both Fluctuation and Dissipation of electrical energy to excel the Real or 1-D model in use that only considers Dissipation. By the two orthogonal currents linked with a common voltage noise by an Admittance function, the new model is shown in frequency domain. Its use in time domain allows to see the pitfall behind a paradox of Statistical Mechanics about systems considered as energy-conserving and deterministic on the microscale that are dissipative and unpredictable on the macroscale and also shows how to use properly the Fluctuation-Dissipation Theorem.

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

Heterogeneous Collaborative Sensor Network for Electrical Management of an Automated House with PV Energy

In this paper we present a heterogeneous collaborative sensor network for electrical management in the residential sector. Improving demand-side management is very important in distributed energy generation applications. Sensing and control are the foundations of the “Smart Grid” which is the future of large-scale energy management. The system presented in this paper has been developed on a self-sufficient solar house called “MagicBox” equipped with grid connection, PV generation, lead-acid batteries, controllable appliances and smart metering. Therefore, there is a large number of energy variables to be monitored that allow us to precisely manage the energy performance of the house by means of collaborative sensors. The experimental results, performed on a real house, demonstrate the feasibility of the proposed collaborative system to reduce the consumption of electrical power and to increase energy efficiency.

Pitting Corrosion in Austenitic Stainless Steel Water Tanks of Hotel Trains

The water storage tanks of hotel trains suffered pitting corrosion. To identify the cause, the tanks were subjected to a detailed metallographic study and the chemical composition of the austenitic stainless steels used in their construction was determined. Both the tank water and the corrosion products were further examined by physicochemical and microbiological testing. Corrosion was shown to be related to an incompatibility between the chloride content of the water and the base and filler metals of the tanks. These findings formed the basis of recommendations aimed at the prevention and control of corrosion in such tanks. Se han detectado problemas de corrosión por picaduras en los depósitos de agua de trenes hotel. Para identificar las causas se llevó a cabo un detallado estudio metalográfico así como de la composición química de los aceros inoxidables austeníticos utilizados en su construcción. También se realizaron estudios fisicoquímicos y microbiológicos de los productos de corrosión. Se ha encontrado que los problemas de corrosión están relacionados con la incompatibilidad entre el contenido en cloruros del agua y los metales base y de aporte de la soldadura de los tanques. En base a estos hallazgos se proponen una serie de recomendaciones encaminadas a la prevención y control de la corrosión de dichos depósitos.

Individualization and Electrical Characterization of SiGe Nanowires

SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective

Solution-processed organic devices developed by a novel cost-effective patterning technique based on electrical erosion

Application of arc erosion to the patterning of metallic contacts in organic devices is presented. A home-made systems and details of the working principles are described. Advantages and drawbacks of this novel technology are discussed.

Pre-Feasibility Study of Hybrid Wind Power-H-2 System Connected to Electrical Grid

The growth of wind power as an electric energy source is profitable from an environmental point of view and improves the energetic independence of countries with little fossil fuel resources. However, the wind resource randomness poses a great challenge in the management of electric grids. This study raises the possibility of using hydrogen as a mean to damp the variability of the wind resource. Thus, it is proposed the use of all the energy produced by a typical wind farm for hydrogen generation, that will in turn be used after for suitable generation of electric energy according to the operation rules in a liberalized electric market.

Hybrid topological derivative and gradient-based methods for electrical impedance tomography

We present a technique to reconstruct the electromagnetic properties of a medium or a set of objects buried inside it from boundary measurements when applying electric currents through a set of electrodes. The electromagnetic parameters may be recovered by means of a gradient method without a priori information on the background. The shape, location and size of objects, when present, are determined by a topological derivative-based iterative procedure. The combination of both strategies allows improved reconstructions of the objects and their properties, assuming a known background.

Influence of the rheological behaviour of the lubricant on the appearance of pitting in elastohydrodynamic eegime

This paper analyses the influence of lubricant behaviour on the appearance of pitting. It attempts to study the effect of viscosity?pressure relation, compressibility, film thickness?roughness relation and friction coefficient on pitting failure of the contacting elements.To explain these effects, we first deal with the influence of the oil on the lubrication of the contact using elastohydrodynamic theory and secondly two multiaxial fatigue criteria are used, Crossland criterion and Dang Van criterion, to evaluate the influence of the rheology on the appearance of pitting. Finally, different applications are presented together with a discussion on the results obtained.

Towards the development of poly (phenylene sulphide) based nanocomposites with enhanced mechanical, electrical and tribological properties

Novel poly(phenylene sulphide) (PPS) nanocomposites reinforced with an aminated derivative (PPS-NH2) covalently attached to acid-treated single-walled carbon nanotubes (SWCNTs) were prepared via simple melt-blending technique. Their morphology, viscoelastic behaviour, electrical conductivity, mechanical and tribological properties were investigated. Scanning electron microscopy revealed that the grafting process was effective in uniformly dispersing the SWCNTs within the matrix. The storage and loss moduli as a function of frequency increased with the SWCNT content, tending to a plateau in the low-frequency regime. The electrical conductivity of the nanocomposites was considerably enhanced in the range 0.1?0.5 wt% SWCNTs; electrical and rheological percolation thresholds occurred at similar nanotube concentrations. Mechanical tests demonstrated that with only 1.0 wt% SWCNTs the Young's modulus and tensile strength of the matrix improved by 51 and 37%, respectively, without decrement in toughness, ascribed to a very efficient load transfer. A moderate decrease in the friction coefficient and a 75% reduction in wear rate were found for the abovementioned nanotube loading, indicating that PPS-NH2-g-SWCNTs are good tribological additives for thermoplastic polymers. Based on the promising results obtained in this work, it is expected that these nanofillers will be used to develop high-performance thermoplastic/CNT nanocomposites for structural applications.

Study of the Electrical Behavior in Intermediate Band-Si Junctions

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1menor queA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.

Electrical, photoelectrical and morphological properties of ZnO nanowire networks grown on SiO2 and on Si

ZnO nanofibre networks (NFNs) were grown by vapour transport method on Si-based substrates. One type of substrate was SiO2 thermally grown on Si and another consisted of a Si wafer onto which Si nanowires (NWs) had been grown having Au nanoparticles catalysts. The ZnO-NFN morphology was observed by scanning electron microscopy on samples grown at 600 °C and 720 °C substrate temperature, while an focused ion beam was used to study the ZnO NFN/Si NWs/Si and ZnO NFN/SiO2 interfaces. Photoluminescence, electrical conductance and photoconductance of ZnO-NFN was studied for the sample grown on SiO2. The photoluminescence spectra show strong peaks due to exciton recombination and lattice defects. The ZnO-NFN presents quasi-persistent photoconductivity effects and ohmic I-V characteristics which become nonlinear and hysteretic as the applied voltage is increased. The electrical conductance as a function of temperature can be described by a modified three dimensional variable hopping model with nanometer-ranged typical hopping distances.

Electrical Power Fluctuations in a Network of DC/AC inverters in a Large PV Plant: relationship between correlation, distance and time scale

This paper analyzes the correlation between the fluctuations of the electrical power generated by the ensemble of 70 DC/AC inverters from a 45.6 MW PV plant. The use of real electrical power time series from a large collection of photovoltaic inverters of a same plant is an impor- tant contribution in the context of models built upon simplified assumptions to overcome the absence of such data. This data set is divided into three different fluctuation categories with a clustering proce- dure which performs correctly with the clearness index and the wavelet variances. Afterwards, the time dependent correlation between the electrical power time series of the inverters is esti- mated with the wavelet transform. The wavelet correlation depends on the distance between the inverters, the wavelet time scales and the daily fluctuation level. Correlation values for time scales below one minute are low without dependence on the daily fluctuation level. For time scales above 20 minutes, positive high correlation values are obtained, and the decay rate with the distance depends on the daily fluctuation level. At intermediate time scales the correlation depends strongly on the daily fluctuation level. The proposed methods have been implemented using free software. Source code is available as supplementary material.

Light level to electrical frequency conversion with hybrid optical bistable devices.

A new concept in light level detection. The basis is the use of hybrid optical bistable devices working in oscillatory mode. The obtained instabilities show a correspondence between their frequency and the laser light intensity.