Optimizing the Density of Holes of EWT Solar Cells Taking Into Consideration Mechanical Aspects

EWT solar cells start from drilled wafers with approximately 100 holes/cm2. These holes act as stress concentrators leading to a reduction in the mechanical strength of this type of wafers. The viability of cells with higher density of holes has been studied. To this end, sets of wafers with different density of holes have been characterized. The ring on ring test has been employed and FE models have been developed to simulate the test. The statistical evaluation permits to draw conclusions about the reduction of the strength depending on the density of holes. Moreover, the stress concentration around the holes has been studied by means of the FE method employing the sub-modeling technique. The maximum principal stress of EWT wafers with twice the density of holes of commercial ones is almost the same. However, the mutual interaction between the stress concentration effects around neighboring holes is only observed for wafers with a density of 200 holes/cm2

Diminished UV-absorbing nets reduce the Spreads and population density of Macrosiphum euphorbiae in lettuce.

UV-absorbing covers reduce the incidence of injurious insect pests and viruses in protected crops. In the present study, the effect of a UV-absorbing net (Bionet) on the spatio-temporal dynamics of the potato aphid on lettuce plants was evaluated. A field experiment was conducted during three seasons in two identical tunnels divided in four plots. A set of lettuce plants were artificially infested with Macrosiphum euphorbiae adults and the population was estimated by counting aphids on every plant over 7 to 9 weeks. Insect population grew exponentially but a significantly lower aphid density was present on plants grown under the UV-absorbing cover compared to a standard 50 mesh net. Similarly, in laboratory conditions, life table parameters were significantly reduced under the Bionet. Moreover, SADIE analysis showed that the spatial distribution of aphids was effectively limited under the UV-absorbing nets. Our results indicate that UV-absorbing nets should be considered as an important component of lettuce indoor cropping systems preventing pesticide applications and reducing the risk of spread of aphid-borne virus diseases.

Power density of a bare electrodynamic tether generator

The maximum performance of bare electrodynamic tethers as power generating systems under OML-theory is analyzed. Results show that best performance in terms of power density is achieved by designing the tether in such a way to increase ohmic impedance with respect to plasma contact impedance, hence favoring longer and thinner tethers. In such condition the corresponding optimal value of the load impedance is seen to approach the ohmic impedance of the conducting tether. At the other extreme, when plasma contact impedance dominates (which is not optimal but can be relevant for some applications) optimum power generation is found by matching the load impedance with an effective tether-plasma contact impedance whose expression is derived.

Electronic structure of copper nitrides as a function of nitrogen content

he nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26 ± 2 to 33 ± 2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu3N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from − 5 to − 50 μV/K in the Seebeck coefficient and to large enhancements, from 10− 3 up to 10 Ω cm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results.

Effect of Sb incorporation on the electronic structure of InAs quantum dots

On the basis of optical characterization experiments and an eight band kp model, we have studied the effect of Sb incorporation on the electronic structure of InAs quantum dots (QDs). We have found that Sb incorporation in InAs QDs shifts the hole wave function to the center of the QD from the edges of the QD where it is otherwise pinned down by the effects of shear stress. The observed changes in the ground-state energy cannot merely be explained by a composition change upon Sb exposure but can be accounted for when the change in lateral size is taken into consideration. The Sb distribution inside the QDs produces distinctive changes in the density of states, particularly, in the separation between excitation shells. We find a 50% increase in the thermal escape activation energy compared with reference InAs quantum dots as well as an increment of the fundamental transition decay time with Sb incorporation. Furthermore, we find that Sb incorporation into quantum dots is strongly nonlinear with coverage, saturating at low doses. This suggests the existence of a solubility limit of the Sb incorporation into the quantum dots during growth.

Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.