Optically Induced Modulation of a Laser Beam in Nematic Liquid Crystals Structures

In this paper we report the experimental results obtained when an He-Ne laser beam crosses an MBBA homeotropic sandwich structure and is modulated by the influence of another laser beam, in our case an Ar+ laser, crossing through the same region. We extend some results previously reported by us1 2 concerning the influence of the ratio of the diameters of the laser beams on the modulation characteristics. A theoretical model, based on the one reported in Ref6 , shows good agreement with the experimental results. If the Ar+ laser is intensity chopped, the resulting He-Ne diffracted image is also intensity modulated. The highest frequency observed has been 500 p. p. s.

Comparison of numerical models for vibro-acoustic analysis of structural panels in low modal density range engaging air layers

During launch, satellite and their equipment are subjected to loads of random nature and with a wide frequency range. Their vibro-acoustic response is an important issue to be analysed, for example for folded solar arrays and antennas. The main issue at low modal density is the modelling combinations engaging air layers, structures and external fluid. Depending on the modal density different methodologies, as FEM, BEM and SEA should be considered. This work focuses on the analysis of different combinations of the methodologies previously stated used in order to characterise the vibro-acoustic response of two rectangular sandwich structure panels isolated and engaging an air layer between them under a diffuse acoustic field. Focusing on the modelling of air layers, different models are proposed. To illustrate the phenomenology described and studied, experimental results from an acoustic test on an ARA-MKIII solar array in folded configuration are presented along with numerical results.

Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers

A post-complementary metal oxide semiconductor (CMOS) compatible microfabrication process of piezoelectric cantilevers has been developed. The fabrication process is suitable for standard silicon technology and provides low-cost and high-throughput manufacturing. This work reports design, fabrication and characterization of piezoelectric cantilevers based on aluminum nitride (AlN) thin films synthesized at room temperature. The proposed microcantilever system is a sandwich structure composed of chromium (Cr) electrodes and a sputtered AlN film. The key issue for cantilever fabrication is the growth at room temperature of the AlN layer by reactive sputtering, making possible the innovative compatibility of piezoelectric MEMS devices with CMOS circuits already processed. AlN and Cr have been etched by inductively coupled plasma (ICP) dry etching using a BCl3–Cl2–Ar plasma chemistry. As part of the novelty of the post-CMOS micromachining process presented here, a silicon Si (1 0 0) wafer has been used as substrate as well as the sacrificial layer used to release the microcantilevers. In order to achieve this, the Si surface underneath the structure has been wet etched using an HNA (hydrofluoric acid + nitric acid + acetic acid) based solution. X-ray diffraction (XRD) characterization indicated the high crystalline quality of the AlN film. An atomic force microscope (AFM) has been used to determine the Cr electrode surface roughness. The morphology of the fabricated devices has been studied by scanning electron microscope (SEM). The cantilevers have been piezoelectrically actuated and their out-of-plane vibration modes were detected by vibrometry.