Single - and double energy swift and slow heavy ion irradiated optical waveguides in Er: Tungstene-Tellurite glass and BGO for telecom applications

The fabrication of broadband amplifiers in wavelength division multiplexing (WDM) around 1.55 m, as they exhibit large stimulated cross sections and broad emission bandwidth. Bi4Ge3O12 (eultine type BGO) - well known scintillator material, also a rare-earth host material, photorefractive waveguides produced in it only using light ions in the past. Recently: MeV N+ ions and swift O5+ and C5+ ions, too*. Bi12GeO20 (sillenite type BGO) - high photoconductivity and photorefractive sensitivity in the visible and NIR good candidate for real-time holography and optical phase conjugation, photorefractive waveguides produced in it only using light ions. No previous attempts of ion beam fabrication of waveguides in it.

Broadband active differential array for the mid-frequency SKA band

This paper presents the design and characterization process of an active array demonstrator for the mid-frequency range (i.e., 300 MHz-1000 MHz) of the future Square Kilometre Array (SKA) radio telescope. This demonstrator, called FIDA3 (FG-IGN: Fundación General Instituto Geográfico Nacional - Differential Active Antenna Array), is part of the Spanish contribution for the SKA project. The main advantages provided by this design include the use of a dielectric-free structure, and the use of a fully-differential receiver in which differential low-noise amplifiers (LNAs) are directly connected to the balanced tapered-slot antennas (TSAs). First, the radiating structure and the differential low-noise amplifiers were separately designed and measured, obtaining good results (antenna elements with low voltage standing-wave ratios, array scanning capabilities up to 45°, and noise temperatures better than 52 K with low-noise amplifiers at room temperature). The potential problems due to the differential nature of the proposed solution are discussed, so some effective methods to overcome such limitations are proposed. Second, the complete active antenna array receiving system was assembled, and a 1 m2 active antenna array tile was characterized.

Bloche-Maxwell treatment of amplification of high harmonic seed in soft x-ray laser amplifiers in both direct and chirped amplifications

Seeding plasma-based softx-raylaser (SXRL) demonstrated diffraction-limited, fully coherent in space and in time beam but with energy not exceeding 1 μJ per pulse. Quasi-steady-state (QSS) plasmas demonstrated to be able to store high amount of energy and then amplify incoherent SXRL up to several mJ. Using 1D time-dependant Bloch–Maxwell model including amplification of noise, we demonstrated that femtosecond HHG cannot be efficiently amplified in QSS plasmas. However, using Chirped Pulse Amplification concept on HHG seed allows to extract most of the stored energy, reaching up to 5 mJ in fully coherent pulses that can be compressed down to 130 fs.

Noise Figure Measurement of Differential Amplifiers Using non-Ideal Baluns

This paper analyzes the noise and gain measurement of microwave differential amplifiers using two passive baluns. A general model of the baluns is considered, including potential losses and phase/amplitude unbalances. This analysis allows de-embedding the actual gain and noise performance of the isolated amplifier by using single-ended measurements of the cascaded system and baluns. Finally, measured results from two amplifier prototypes are used to validate the theoretical principles.

Broadband Channel Long Delay Cluster Measurements and Analysis at 2.4GHz in Subway Tunnels

The delay caused by the reflected ray in broadband communication has a great influence on the communications in subway tunnel. This paper presents measurements taken in subway tunnels at 2.4 GHz, with 5 MHz bandwidth. According to propagation characteristics of tunnel, the measurements were carried out with a frequency domain channel sounding technique, in three typical scenarios: line of sight (LOS), Non-line-of-sight (NLOS) and far line of sight (FLOS), which lead to different delay distributions. Firstly IFFT was chosen to get channel impulse response (CIR) h(t) from measured three-dimensional transfer functions. Power delay profile (PDP) was investigated to give an overview of broadband channel model. Thereafter, a long delay caused by the obturation of tunnel is observed and investigated in all the scenarios. The measurements show that the reflection can be greatly remained by the tunnel, which leads to long delay cluster where the reflection, but direct ray, makes the main contribution for radio wave propagation. Four important parameters: distribution of whole PDP power, first peak arriving time, reflection cluster duration and PDP power distribution of reflection cluster were studied to give a detailed description of long delay characteristic in tunnel. This can be used to ensure high capacity communication in tunnels

Design methodology in multiphase buck converter based on minimum time control for high efficiency RF amplifiers

This paper proposes an interleaved multiphase buck converter with minimum time control strategy for envelope amplifiers in high efficiency RF power amplifiers. The solution of the envelope amplifier is to combine the proposed converter with a linear regulator in series. High system efficiency can be obtained through modulating the supply voltage of the envelope amplifier with the fast output voltage variation of the converter working with several particular duty cycles that achieve total ripple cancellation. The transient model for minimum time control is explained, and the calculation of transient times that are pre-calculated and inserted into a look-up table is presented. The filter design trade-off that limits capability of envelope modulation is also discussed. The experimental results verify the fast voltage transient obtained with a 4-phase buck prototype.

New broadband thermal noise primary standard in coaxial technology

A broadband primary standard for thermal noise measurements is presented and its thermal and electromagnetic behavior is analyzed by means of analytical and numerical simulation techniques. It consists of a broadband termination connected to a 3.5mm coaxial airline partially immersed in liquid Nitrogen. The main innovative part of the device is the thermal bead between inner and outer conductors, designed for obtaining a proper thermal contact and to keep low both its contribution to the total thermal noise and its reflectivity. A sensitivity analysis is realized in order to fix the manufacturing tolerances for a proper performance in the range 10MHz¿26.5GHz.

Envelope amplifier based on switching capacitors for high efficiency RF amplifiers

Modern transmitters usually have to amplify and transmit signals with simultaneous envelope and phase modulation. Due to this property of the transmitted signal, linear power amplifiers (class A, B, or AB) are usually used as a solution for the power amplifier stage. These amplifiers have high linearity, but suffer from low efficiency when the transmitted signal has high peak-to-average power ratio. The Kahn envelope elimination and restoration technique is used to enhance the efficiency of RF transmitters, by combining highly efficient, nonlinear RF amplifier (class E) with a highly efficient envelope amplifier in order to obtain a linear and highly efficient RF amplifier. This paper presents a solution for the envelope amplifier based on a multilevel converter in series with a linear regulator. The multilevel converter is implemented by employing voltage dividers based on switching capacitors. The implemented envelope amplifier can reproduce any signal with a maximum spectral component of 2 MHz and give instantaneous maximum power of 50 W. The efficiency measurements show that when the signals with low average value are transmitted, the implemented prototypes have up to 20% higher efficiency than linear regulators used as a conventional solution.

Analysis of noise temperature sensitivity for the design of a broadband thermal noise primary standard

A broadband primary standard for thermal noise measurements is presented and its thermal and electromagnetic behaviour is analysed by means of a novel hybrid analytical?numerical simulation methodology. The standard consists of a broadband termination connected to a 3.5mm coaxial airline partially immersed in liquid nitrogen and is designed in order to obtain a low reflectivity and a low uncertainty in the noise temperature. A detailed sensitivity analysis is made in order to highlight the critical characteristics that mostly affect the uncertainty in the noise temperature, and also to determine the manufacturing and operation tolerances for a proper performance in the range 10MHz to 26.5 GHz. Aspects such as the thermal bead design, the level of liquid nitrogen or the uncertainties associated with the temperatures, the physical properties of the materials in the standard and the simulation techniques are discussed.

Modeling Reflective Bistability in Vertical-Cavity Semiconductor Optical Amplifiers

The characteristics of optical bistability in a vertical- cavity semiconductor optical amplifier (VCSOA) operated in reflection are reported. The dependences of the optical bistability in VCSOAs on the initial phase detuning and on the applied bias current are analyzed. The optical bistability is also studied for different numbers of superimposed periods in the top distributed bragg reflector (DBR) that conform the internal cavity of the device. The appearance of the X-bistable and the clockwise bistable loops is predicted theoretically in a VCSOA operated in reflection for the first time, to the best of our knowledge. Moreover, it is also predicted that the control of the VCSOA’s top reflectivity by the addition of new superimposed periods in its top DBR reduces by one order of magnitude the input power needed for the assessment of the X- and the clockwise bistable loop, compared to that required in in-plane semiconductor optical amplifiers. These results, added to the ease of fabricating two-dimensional arrays of this kind of device could be useful for the development of new optical logic or optical signal regeneration devices.

Neural Processing Unit based on the Optical Bistable Properties of Semiconductor Laser Amplifiers

This paper analyzes the behavior of a neural processing unit based on the optical bistable properties of semiconductor laser amplifiers. A similar unit to the reported here was previously employed in the simulation of the mammalian retina. The main advantages of the present cell are its larger fan-out and the possibility of different responses according to the light wavelength impinging onto the cell. These properties allow to work with larger structures as well as to obtain different behaviors according to the light characteristics. This new approach gives a possible modeling closer to the real biological configurations. Moreover, a more detailed analysis of the basic cell internal behavior is reported

All-optical logic gates with 1550nm Fabry-Perot and distributed feedback semiconductor laser amplifiers

The optical bistability occurring in laser diode amplifiers is used to design an all-optical logic gate capable to provide the whole set of logic functions. The structure of the reported logic gate is based on two connected 1550nm laser amplifiers (Fabry-Perot and distributed feedback laser amplifiers).

Desarrollo de circuitos de alta frecuencia para LTE

En este proyecto realizaremos un estudio del efecto de las interferencias procedentes de las redes públicas y veremos cómo afectan el rendimiento de las comunicaciones GSM-R que están en la banda de frecuencias adyacente, por un lado, definiremos las características de las redes públicas y como afectan los niveles de potencia y los anchos de banda de redes de banda ancha, especialmente LTE que dispone de un ancho de banda adaptativo que puede llegar hasta 20 MHZ, y por otro lado definiremos las características y las exigencias de las comunicaciones GSM-R que es una red privada que se utiliza actualmente para comunicaciones ferroviales. Con el objetivo de determinar el origen y los motivos de estas interferencias vamos a explicar cómo se produzcan las emisiones no deseadas de las redes públicas que son fruto de la intermodulación que se produzca por las características no lineales de los amplificadores, entre las emisiones no deseadas se puede diferenciar entre el dominio de los espurios y el dominio de las emisiones fuera de banda, para determinar el nivel de las emisiones fuera de banda definiremos la relación de fugas del canal adyacente, ACLR, que determina la diferencia entre el pico de la señal deseada y el nivel de señal interferente en la banda de paso. Veremos cómo afectan estas emisiones no deseadas a las comunicaciones GSMR en el caso de interferencias procedentes de señales de banda estrecha, como es el caso de GSM, y como afectan en el caso de emisiones de banda ancha con los protocolos UMTS y LTE, también estudiaremos como varia el rendimiento de la comunicación GSM-R frente a señales LTE de diferentes anchos de banda. Para reducir el impacto de las interferencias sobre los receptores GSM-R, analizaremos el efecto de los filtros de entrada de los receptores GSM-R y veremos cómo varia la BER y la ACLR. Además, con el objetivo de evaluar el rendimiento del receptor GSM-R ante diferentes tipos de interferencias, simularemos dos escenarios donde la red GSM-R se verá afectada por las interferencias procedente de una estación base de red pública, en el primer escenario la distancia entre la BS y MS GSM-R será de 4.6 KM, mientras en el segundo escenario simularemos una situación típica cuando un tren está a una distancia corta (25 m) de la BS de red pública. Finalmente presentaremos los resultados en forma de graficas de BER y ACLR, y tablas indicando los diferentes niveles de interferencias y la diferencia entre la potencia a la que obtenemos un valor óptimo de BER, 10-3, sin interferencia y la potencia a la que obtenemos el mismo valor con interferencias. ABSTRACT In this project we will study the interference effect from public networks and how they affect the performance of GSM-R communications that are in the adjacent frequency band, furthermore, we will define the characteristics of public networks and will explain how the power levels and bandwidth broadband networks are affected as a result, especially LTE with adaptive bandwidth that can reach 20 MHZ. Lastly, we will define the characteristics and requirements of the GSM-R communications, a private network that is currently used for railways communications. In order to determine the origin and motives of these interferences, we will explain what causes unwanted emissions of public networks that occur as a result. The intermodulation, which is caused by the nonlinear characteristics of amplifiers. Unwanted emissions from the transmitter are divided into OOB (out-of-band) emission and spurious emissions. The OOB emissions are defined by an Adjacent Channel Leakage Ratio (ACLR) requirement. We'll analyze the effect of the OOB emission on the GSM-R communication in the case of interference from narrowband signals such as GSM, and how they affect emissions in the case of broadband such as UMTS and LTE; also we will study how performance varies with GSM-R versus LTE signals of different bandwidths. To reduce the impact of interference on the GSM-R receiver, we analyze the effect of input filters GSM-R receivers to see how it affects the BER (Bits Error Rate) and ACLR. To analyze the GSM-R receiver performance in this project, we will simulate two scenarios when the GSM-R will be affected by interference from a base station (BS). In the first case the distance between the public network BS and MS GSM-R is 4.6 KM, while the second case simulates a typical situation when a train is within a short distance, 25 m, of a public network BS. Finally, we will present the results as BER and ACLR graphs, and tables showing different levels of interference and the differences between the power to obtain an optimal value of BER, 10-3, without interference, and the power that gets the same value with interference.

Wavelength monitoring with semiconductor laser amplifiers

The semiconductor laser diodes that are typically used in applications of optical communications, when working as amplifiers, present under certain conditions optical bistability, which is characterized by abruptly switching between two different output states and an associated hysteresis cycle. This bistable behavior is strongly dependent on the frequency detuning between the frequency of the external optical signal that is injected into the semiconductor laser amplifier and its own emission frequency. This means that small changes in the wavelength of an optical signal applied to a laser amplifier causes relevant changes in the characteristics of its transfer function in terms of the power requirements to achieve bistability and the width of the hysteresis. This strong dependence in the working characteristics of semiconductor laser amplifiers on frequency detuning suggest the use of this kind of devices in optical sensing applications for optical communications, such as the detection of shifts in the emission wavelength of a laser, or detect possible interference between adjacent channels in DWDM (Dense Wavelength Division Multiplexing) optical communication networks

Vertical-cavity semiconductor optical amplifiers (VCSOAs) as optical sensing elements

Semiconductor Optical Amplifiers (SOAs) have mainly found application in optical telecommunication networks for optical signal regeneration, wavelength switching or wavelength conversion. The objective of this paper is to report the use of semiconductor optical amplifiers for optical sensing taking into account their optical bistable properties. As it was previously reported, some semiconductor optical amplifiers, including Fabry-Perot and Distributed-Feedback Semiconductor Optical Amplifiers (FPSOAs and DFBSOAs), may exhibit optical bistability. The characteristics of the attained optical bistability in this kind of devices are strongly dependent on different parameters including wavelength, temperature or applied bias current and small variations lead to a change on their bistable properties. As in previous analyses for Fabry-Perot and DFB SOAs, the variations of these parameters and their possible application for optical sensing are reported in this paper for the case of the Vertical-Cavity Semiconductor Optical Amplifier (VCSOA). When using a VCSOA, the input power needed for the appearance of optical bistability is one order of magnitude lower than that needed in edge-emitting devices. This feature, added to the low manufacturing costs of VCSOAs and the ease to integrate them in 2-D arrays, makes the VCSOA a very promising device for its potential use in optical sensing applications.