Electrical Power Fluctuations in a Network of DC/AC inverters in a Large PV Plant: relationship between correlation, distance and time scale

This paper analyzes the correlation between the fluctuations of the electrical power generated by the ensemble of 70 DC/AC inverters from a 45.6 MW PV plant. The use of real electrical power time series from a large collection of photovoltaic inverters of a same plant is an impor- tant contribution in the context of models built upon simplified assumptions to overcome the absence of such data. This data set is divided into three different fluctuation categories with a clustering proce- dure which performs correctly with the clearness index and the wavelet variances. Afterwards, the time dependent correlation between the electrical power time series of the inverters is esti- mated with the wavelet transform. The wavelet correlation depends on the distance between the inverters, the wavelet time scales and the daily fluctuation level. Correlation values for time scales below one minute are low without dependence on the daily fluctuation level. For time scales above 20 minutes, positive high correlation values are obtained, and the decay rate with the distance depends on the daily fluctuation level. At intermediate time scales the correlation depends strongly on the daily fluctuation level. The proposed methods have been implemented using free software. Source code is available as supplementary material.

Performance metrics for small-signal stability assessment of DC-distributed power-system-architecture comparisons

The objective of this paper is to provide performance metrics for small-signal stability assessment of a given system architecture. The stability margins are stated utilizing a concept of maximum peak criteria (MPC) derived from the behavior of an impedance-based sensitivity function. For each minor-loop gain defined at every system interface, a single number to state the robustness of stability is provided based on the computed maximum value of the corresponding sensitivity function. In order to compare various power-architecture solutions in terms of stability, a parameter providing an overall measure of the whole system stability is required. The selected figure of merit is geometric average of each maximum peak value within the system. It provides a meaningful metrics for system comparisons: the best system in terms of robust stability is the one that minimizes this index. In addition, the largest peak value within the system interfaces is given thus detecting the weakest point of the system in terms of robustness.

Systematic Method to Assess Small-Signal Stability of DC-Distributed Power-System-Architecture

The objective of this paper is to present a simplified method to analyze small-signal stability of a power system and provide performance metrics for stability assessment of a given power-system-architecture. The stability margins are stated utilizing a concept of maximum peak criteria (MPC), derived from the behavior of an impedance-based sensitivity function that provides a single number to state the robustness of the stability of a well-defined minor-loop gain. For each minor-loop gain, defined at every system interface, the robustness of the stability is provided as a maximum value of the corresponding sensitivity function. Typically power systems comprise of various interfaces and, therefore, in order to compare different architecture solutions in terms of stability, a single number providing an overall measure of the whole system stability is required. The selected figure of merit is geometric average of each maximum peak value within the system, combined with the worst case value of system interfaces.

Toward a consolidation of the CPV-specific-test procedures for inverters

The inverter in a photovoltaic system assures two essential functions. The first is to track the maximum power point of the system IV curve throughout variable environmental conditions. The second is to convert DC power delivered by the PV panels into AC power. Nowadays, in order to qualify inverters, manufacturers and certifying organisms use mainly European and/or CEC efficiency standards. The question arises if these are still representative of CPV system behaviour. We propose to use a set of CPV – specific weighted average and a representative dynamic response to have a better determination of the static and dynamic MPPT efficiencies. Four string-sized commercial inverters used in real CPV plants have been tested.

Dual Active Bridge based Battery Charger for Plug-in Hybrid Electric Vehicle with Charging Current Containing Low Frequency Ripple

High power density is strongly preferable for the on-board battery charger of Plug-in Hybrid Electric Vehicle (PHEV). Wide band gap devices, such as Gallium Nitride HEMTs are being explored to push to higher switching frequency and reduce passive component size. In this case, the bulk DC link capacitor of AC-DC Power Factor Correction (PFC) stage, which is usually necessary to store ripple power of two times the line frequency in a DC current charging system, becomes a major barrier on power density. If low frequency ripple is allowed in the battery, the DC link capacitance can be significantly reduced. This paper focuses on the operation of a battery charging system, which is comprised of one Full Bridge (FB) AC-DC stage and one Dual Active Bridge (DAB) DC-DC stage, with charging current containing low frequency ripple at two times line frequency, designated as sinusoidal charging. DAB operation under sinusoidal charging is investigated. Two types of control schemes are proposed and implemented in an experimental prototype. It is proved that closed loop current control is the better. Full system test including both FB AC-DC stage and DAB DC-DC stage verified the concept of sinusoidal charging, which may lead to potentially very high power density battery charger for PHEV.

Islanding detection in Microgrids using Harmonic Signature

In recent years, there has been a growing interest in incorporating microgrids in electrical power networks. This is due to various advantages they present, particularly the possibility of working in either autonomous mode or grid connected, which makes them highly versatile structures for incorporating intermittent generation and energy storage. However, they pose safety issues in being able to support a local island in case of utility disconnection. Thus, in the event of an unintentional island situation, they should be able to detect the loss of mains and disconnect for self-protection and safety reasons. Most of the anti-islanding schemes are implemented within control of single generation devices, such as dc-ac inverters used with solar electric systems being incompatible with the concept of microgrids due to the variety and multiplicity of sources within the microgrid. In this paper, a passive islanding detection method based on the change of the 5th harmonic voltage magnitude at the point of common coupling between grid-connected and islanded modes of operation is presented. Hardware test results from the application of this approach to a laboratory scale microgrid are shown. The experimental results demonstrate the validity of the proposed method, in meeting the requirements of IEEE 1547 standards.

Current Mode with RMS Voltage and Offset Control Loops for a Single-Phase Aircraft Inverter Suitable for Parallel and 3-Phase Operation Modes

Rms voltage regulation may be an attractive possibility for controlling power inverters. Combined with a Hall Effect sensor for current control, it keeps its parallel operation capability while increasing its noise immunity, which may lead to a reduction of the Total Harmonic Distortion (THD). Besides, as voltage regulation is designed in DC, a simple PI regulator can provide accurate voltage tracking. Nevertheless, this approach does not lack drawbacks. Its narrow voltage bandwidth makes transients last longer and it increases the voltage THD when feeding non-linear loads, such as rectifying stages. On the other hand, the implementation can fall into offset voltage error. Furthermore, the information of the output voltage phase is hidden for the control as well, making the synchronization of a 3-phase setup not trivial. This paper explains the concept, design and implementation of the whole control scheme, in an on board inverter able to run in parallel and within a 3-phase setup. Special attention is paid to solve the problems foreseen at implementation level: a third analog loop accounts for the offset level is added and a digital algorithm guarantees 3-phase voltage synchronization.

Digital Control Implementation to Reduce the Cost and Improve the Performance of the Control Stage of an Industrial Switched-Mode Power Supply

The main objective of this work is the design and implementation of the digital control stage of a 280W AC/DC industrial power supply in a single low-cost microcontroller to replace the analog control stage. The switch-mode power supply (SMPS) consists of a PFC boost converter with fixed frequency operation and a variable frequency LLC series resonant DC/DC converter. Input voltage range is 85VRMS-550VRMS and the output voltage range is 24V-28V. A digital controller is especially suitable for this kind of SMPS to implement its multiple functionalities and to keep the efficiency and the performance high over the wide range of input voltages. Additional advantages of the digital control are reliability and size. The optimized design and implementation of the digital control stage it is presented. Experimental results show the stable operation of the controlled system and an estimation of the cost reduction achieved with the digital control stage.

Excitación y control de IGBTs de un inversor trifásico sinusoidal

El origen del proyecto se encuentra en la mejora de un inversor trifásico sinusoidal comercial sobre la base del estudio de las técnicas de excitación óptimas para los IGBTs que lo componen en su etapa de potencia. En las primeras fases de planteamiento del proyecto se propone una idea mucho más ambiciosa, la realización de un nuevo convertidor de emergencia, destinado al sector ferroviario, para dar servicio de climatización. Este convertidor está formado por la asociación en cascada de un bloque DC/DC elevador y un bloque inversor DC/AC trifásico controlado mediante PWM con modulación sinusoidal. Se pretendía así dar solución a las siguientes problemáticas detectadas en los convertidores comercializados hasta el momento: un bloque elevador excesivamente sobredimensionado, subsistemas de control independientes para los dos bloques que configuran el convertidor, adicionalmente, la tarjeta driver se rediseña con cada cambio de especificaciones por parte de un nuevo cliente y finalmente, las comunicaciones tanto de diagnosis como de mantenimiento necesitaban una importante actualización. Inicialmente, se ha realizado un estudio teórico de los bloques elevador e inversor para poder realizar el diseño y dimensionamiento de sus componentes tanto semiconductores como electromagnéticos. Una vez completada la parte de potencia, se estudia el control que se realiza mediante medidas directas y simulación tanto de la estrategia de control del elevador como del inversor. Así se obtiene una información completa de la funcionalidad de las tarjetas existentes. Se desea realizar el diseño de una única tarjeta controladora y una única tarjeta de drivers para ambos bloques. Por problemas ajenos, en el transcurso de este proyecto se cancela su realización comercial, con lo que se decide al menos crear la placa de control y poder gobernar un convertidor ya existente, sustituyendo la tarjeta de control del bloque elevador. Para poder fabricar la placa de control se divide en dos tarjetas que irán conectadas en modo sándwich. En una tarjeta está el microcontrolador y en otra está todo el interface necesario para operar con el sistema: entradas y salidas digitales, entradas y salidas analógicas, comunicación CAN, y un pequeño DC/DC comercial que proporciona alimentación al prototipo. Se realiza un pequeño programa funcional para poder manejar el convertidor, el cual con una tensión de 110V DC, proporciona a la salida una tensión de 380V AC. Como ya se ha expuesto, debido a la cancelación del proyecto industrial no se profundiza más en su mejora y se decide proponerlo para su evaluación en su fase actual. ABSTRACT. The beginning of the project is found in the improvement of a commercial sine wave three phase inverter which is based in a study about optimal excitation techniques to IGBTs which compose in the power stage. In the early phases of project it is proposed a much more ambitious idea, the fact of a new emergency converter, proposed for the rail sector to work in an air condition unit. This converter is formed by an association of a block cascaded DC/DC booster and a block DC/AC inverter three-phase controlled by a sine wave modulation PWM. The purposed was to give a solution to following problems detected in commercial converters nowadays: an excessively oversized block boost, independent control subsystems for two blocks that configure the converter. In addition, driver board is redesigned with each specifications change demand it a new customer, and finally, the communications, diagnostic and maintenance that needed a important upgrade. Initially, it has been performed a theoretical study of boost and the inverter blocks to be able to perform the component’s design and the size (semiconductor and electromagnetic fields). Once finished power study, it is analysed the control performed using direct measures and simulation of boost control strategy and inverter. With this it is obtained complete information about existing cards functionality. The project is looking for the design of just one controller card and one drivers´ card for both blocks. By unrelated problems, during the course of this project a commercial realization. So at least its decided to create control board to be able to existing converter, replacing boost block’s control board. To be able to manufacture control board it is divided in two cards connected in sandwiching mode. In a card is microcontroller and in another is all needed interface to operate with the system: digital inputs and outputs, analogical inputs and outputs, CAN communication, and a small DC / DC business that provide power supply to the prototype. It is performed a small functional program to handle the converter, which with an input voltage 110V DC provides an output voltage 380V AC. As already has been exposed, due to industrial project cancellation it is decided no to continue with all improvements and directly to evaluate it in the current phase.

Simulación, construcción y medida de un sistema de telealimentación eficiente

Los sistemas de telealimentación han tomado gran importancia en diferentes campos, incluido el de las telecomunicaciones, algunos ejemplos pueden ser: En la red conmutada telefónica junto con la señal de información y llamada existe una alimentación de 48v que se transmite a través de toda la línea de transmisión hasta los terminales. En algunos ferrocarriles eléctricos, se aprovecha la producción de energía eléctrica cuando un tren baja una cuesta y el motor funciona como generador, devolviendo la energía excedente a la propia catenaria por medio de superposición, y siendo esta recuperada en otro lugar y aprovechada por ejemplo por otro tren que requiere energía. Otro uso en ferrocarriles de la telealimentación es la llamada "tecnología del transpondedor magnético", en la que el tren transmite a las balizas una señal en 27MHz además de otras de información propias, que se convierte en energía útil para estas balizas. En este proyecto pretendemos implementar un pequeño ejemplo de sistema de telealimentación trabajando en 5 MHz (RF). Este sistema transforma una señal de CC en una señal de potencia de CA que podría ser, por ejemplo, transmitida a lo largo de una línea de transmisión o radiada por medio de una antena. Después, en el extremo receptor, esta señal RF se transforma finalmente en DC. El objetivo es lograr el mejor rendimiento de conversión de energía, DC a AC y AC a DC. El sistema se divide en dos partes: El inversor, que es la cadena de conversión DC-AC y el rectificador, que es la cadena de conversión AC-DC. Cada parte va a ser calculada, simulada, implementada físicamente y medida aparte. Finalmente el sistema de telealimentación completo se va a medir mediante la interconexión de cada parte por medio de un adaptador o una línea de transmisión. Por último, se mostrarán los resultados obtenidos. ABSTRACT. Remote powering systems have become very important in different fields, including telecommunications, some examples include: In the switched telephone network with the information signal and call there is a 48v supply that is transmitted across the transmission line to the terminals. In some electric railways, the production of electrical energy is used when a train is coming down a hill and the motor acts as a generator, returning the surplus energy to the catenary itself by overlapping, and this being recovered elsewhere and used by other train. Home TV amplifiers that are located in places (storage, remote locations ..) where there is no outlet, remote power allows to carry information and power signal by the same physical medium, for instance a coax. The AC power signal is transformed into DC at the end to feed the amplifier. In medicine, photovoltaic converters and fiber optics can be used as means for feeding devices implanted in patients. Another use of the remote powering systems on railways is the "magnetic transponder technology", in which the station transmits a beacon signal at 27MHz own as well as other information, which is converted into useful energy to these beacons. In this Project we are pretending to implement a little example of remote powering system working in 5 MHz (RF). This system transform DC into an AC-RF power signal which could be, for instance, transmitted throughout a transmission line or radiated by means of an aerial. At the receiving end, this RF signal is then transformed to DC. The objective is to achieve the best power conversion performance, DC to AC and AC to DC. The system is divided in two parts: The inverter, that is the DC-AC conversion chain and the rectifier that is the AC-DC conversion chain. Each part is going to be calculated, simulated, implemented physically and measured apart. Then the complete remote-powering system is to be measured by interconnecting each part by means of a interconnector or a transmission line. Finally, obtained results will be shown.

PV power forecast using a nonparametric PV model

Forecasting the AC power output of a PV plant accurately is important both for plant owners and electric system operators. Two main categories of PV modeling are available: the parametric and the nonparametric. In this paper, a methodology using a nonparametric PV model is proposed, using as inputs several forecasts of meteorological variables from a Numerical Weather Forecast model, and actual AC power measurements of PV plants. The methodology was built upon the R environment and uses Quantile Regression Forests as machine learning tool to forecast AC power with a confidence interval. Real data from five PV plants was used to validate the methodology, and results show that daily production is predicted with an absolute cvMBE lower than 1.3%.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

Sistema de instrumentação e controle para células a combustível

Este trabajo presenta un estudio sobre el funcionamiento y aplicaciones de las células de combustible de membrana tipo PEM, o de intercambio de protones, alimentadas con hidrógeno puro y oxigeno obtenido de aire comprimido. Una vez evaluado el proceso de dichas células y las variables que intervienen en el mismo, como presión, humedad y temperatura, se presenta una variedad de métodos para la instrumentación de tales variables así como métodos y sistemas para la estabilidad y control de las mismas, en torno a los valores óptimos para una mayor eficacia en el proceso. Tomando como variable principal a controlar la temperatura del proceso, y exponiendo los valores concretos en torno a 80 grados centígrados entre los que debe situarse, es realizado un modelo del proceso de calentamiento y evolución de la temperatura en función de la potencia del calentador resistivo en el dominio de la frecuencia compleja, y a su vez implementado un sistema de medición mediante sensores termopar de tipo K de respuesta casi lineal. La señal medida por los sensores es amplificada de manera diferencial mediante amplificadores de instrumentación INA2126, y es desarrollado un algoritmo de corrección de error de unión fría (error producido por la inclusión de nuevos metales del conector en el efecto termopar). Son incluidos los datos de test referentes al sistema de medición de temperatura , incluyendo las desviaciones o error respecto a los valores ideales de medida. Para la adquisición de datos y implementación de algoritmos de control, es utilizado un PC con el software Labview de National Instruments, que permite una programación intuitiva, versátil y visual, y poder realizar interfaces de usuario gráficas simples. La conexión entre el hardware de instrumentación y control de la célula y el PC se realiza mediante un interface de adquisición de datos USB NI 6800 que cuenta con un amplio número de salidas y entradas analógicas. Una vez digitalizadas las muestras de la señal medida, y corregido el error de unión fría anteriormente apuntado, es implementado en dicho software un controlador de tipo PID ( proporcional-integral-derivativo) , que se presenta como uno de los métodos más adecuados por su simplicidad de programación y su eficacia para el control de este tipo de variables. Para la evaluación del comportamiento del sistema son expuestas simulaciones mediante el software Matlab y Simulink determinando por tanto las mejores estrategias para desarrollar el control PID, así como los posibles resultados del proceso. En cuanto al sistema de calentamiento de los fluidos, es empleado un elemento resistor calentador, cuya potencia es controlada mediante un circuito electrónico compuesto por un detector de cruce por cero de la onda AC de alimentación y un sistema formado por un elemento TRIAC y su circuito de accionamiento. De manera análoga se expone el sistema de instrumentación para la presión de los gases en el circuito, variable que oscila en valores próximos a 3 atmosferas, para ello es empleado un sensor de presión con salida en corriente mediante bucle 4-20 mA, y un convertidor simple corriente a tensión para la entrada al sistema de adquisición de datos. Consecuentemente se presenta el esquema y componentes necesarios para la canalización, calentamiento y humidificación de los gases empleados en el proceso así como la situación de los sensores y actuadores. Por último el trabajo expone la relación de algoritmos desarrollados y un apéndice con información relativa al software Labview. ABTRACT This document presents a study about the operation and applications of PEM fuel cells (Proton exchange membrane fuel cells), fed with pure hydrogen and oxygen obtained from compressed air. Having evaluated the process of these cells and the variables involved on it, such as pressure, humidity and temperature, there is a variety of methods for implementing their control and to set up them around optimal values for greater efficiency in the process. Taking as primary process variable the temperature, and exposing its correct values around 80 degrees centigrade, between which must be placed, is carried out a model of the heating process and the temperature evolution related with the resistive heater power on the complex frequency domain, and is implemented a measuring system with thermocouple sensor type K performing a almost linear response. The differential signal measured by the sensor is amplified through INA2126 instrumentation amplifiers, and is developed a cold junction error correction algorithm (error produced by the inclusion of additional metals of connectors on the thermocouple effect). Data from the test concerning the temperature measurement system are included , including deviations or error regarding the ideal values of measurement. For data acquisition and implementation of control algorithms, is used a PC with LabVIEW software from National Instruments, which makes programming intuitive, versatile, visual, and useful to perform simple user interfaces. The connection between the instrumentation and control hardware of the cell and the PC interface is via a USB data acquisition NI 6800 that has a large number of analog inputs and outputs. Once stored the samples of the measured signal, and correct the error noted above junction, is implemented a software controller PID (proportional-integral-derivative), which is presented as one of the best methods for their programming simplicity and effectiveness for the control of such variables. To evaluate the performance of the system are presented simulations using Matlab and Simulink software thereby determining the best strategies to develop PID control, and possible outcomes of the process. As fluid heating system, is employed a heater resistor element whose power is controlled by an electronic circuit comprising a zero crossing detector of the AC power wave and a system consisting of a Triac and its drive circuit. As made with temperature variable it is developed an instrumentation system for gas pressure in the circuit, variable ranging in values around 3 atmospheres, it is employed a pressure sensor with a current output via 4-20 mA loop, and a single current to voltage converter to adequate the input to the data acquisition system. Consequently is developed the scheme and components needed for circulation, heating and humidification of the gases used in the process as well as the location of sensors and actuators. Finally the document presents the list of algorithms and an appendix with information about Labview software.

Simulation of AC, DC, and AC-DC coupled mini-grids. In search of the most efficient system

Renewable energy hybrid systems and mini-grids for electrification of rural areas are known to be reliable and more cost efficient than grid extension or only-diesel based systems. However, there is still some uncertainty in some areas, for example, which is the most efficient way of coupling hybrid systems: AC, DC or AC-DC? With the use of Matlab/Simulink a mini-grid that connects a school, a small hospital and an ecotourism hostel has been modelled. This same mini grid has been coupled in the different possible ways and the system’s efficiency has been studied. In addition, while keeping the consumption constant, the generation sources and the consumption profile have been modified and the effect on the efficiency under each configuration has also been analysed. Finally different weather profiles have been introduced and, again, the effect on the efficiency of each system has been observed.

Optimal design of AC EMI filters with damping networks and effect on the systems power factor

The cutoff frequencies of an EMI filter are normally given by the noise attenuation requirements the filter has to fulfill. In order to select the component values of the filter elements, i.e. inductances and capacitances, an additional design criterium is needed. In this paper the effect of the EMI filter input and output impedances are considered. The input impedance influences the filters effect on the system displacement power factor and the output impedance plays a key role in the system stability. The effect of filter element values, the number of filter stages as well as additional damping networks are considered and a design procedure is provided. For this analysis a two-port description of the input filters employing ABCD-parameters is used.