High-temperature mechanical properties of aluminium alloys reinforced with titanium diboride (TiB2) particles

The physical and mechanical properties of metal matrix composites were improved by the addition of reinforcements. The mechanical properties of particulate-reinforced metal-matrix composites based on aluminium alloys (6061 and 7015) at high temperatures were studied. Titanium diboride (TiB2) particles were used as the reinforcement. All the composites were produced by hot extrusion. The tensile properties and fracture characteristics of these materials were investigated at room temperature and at high temperatures to determine their ultimate strength and strain to failure. The fracture surface was analysed by scanning electron microscopy. TiB2 particles provide high stability of the aluminium alloys (6061 and 7015) in the fabrication process. An improvement in the mechanical behaviour was achieved by adding TiB2 particles as reinforcement in both the aluminium alloys. Adding TiB2 particles reduces the ductility of the aluminium alloys but does not change the microscopic mode of failure, and the fracture surface exhibits a ductile appearance with dimples formed by coalescence.

Mechanical properties of tungsten alloys with Y2O3 and titanium additions

In this research the mechanical behaviour of pure tungsten (W) and its alloys (2 wt.% Ti–0.47 wt.% Y2O3 and 4 wt.% Ti–0.5 wt.% Y2O3) is compared. These tungsten alloys, have been obtained by powder metallurgy. The yield strength, fracture toughness and elastic modulus have been studied in the temperature interval of 25 °C to 1000 °C. The results have shown that the addition of Ti substantially improves the bending strength and toughness of W, but it also dramatically increases the DBTT. On the other hand, the addition of 0.5% Y2O3, is enough to improve noticeably the oxidation behaviour at the higher temperatures. The grain size, fractography and microstructure are studied in these materials. Titanium is a good grain growth inhibitor and effective precursor of liquid phase in HIP. The simultaneous presence of Y2O3 and Ti permits to obtain materials with low pores presence

Comparison of Mesh Adaptation Using the Adjoint Methodology and Truncation Error Estimates

Mesh adaptation based on error estimation has become a key technique to improve th eaccuracy o fcomputational-fluid-dynamics computations. The adjoint-based approach for error estimation is one of the most promising techniques for computational-fluid-dynamics applications. Nevertheless, the level of implementation of this technique in the aeronautical industrial environment is still low because it is a computationally expensive method. In the present investigation, a new mesh refinement method based on estimation of truncation error is presented in the context of finite-volume discretization. The estimation method uses auxiliary coarser meshes to estimate the local truncation error, which can be used for driving an adaptation algorithm. The method is demonstrated in the context of two-dimensional NACA0012 and three-dimensional ONERA M6 wing inviscid flows, and the results are compared against the adjoint-based approach and physical sensors based on features of the flow field.

Automatic mesh generation processor for 3-D parabolic boundary discretization

An automatic Mesh Generation Preprocessor for BE Programs with a considerable of capabilities has been developed. This program allows almost any kind of geometry and tipology to be defined with a small amount of external data, and with an important approximation of the boundary geometry. Also the error checking possibility is very important for a fast comprobation of the results.

An interpolation tool for aerodynamic mesh deformation problems based on octree decomposition

Desarrollo de algoritmo de interpolación basado en descomposición octree y funciones radiales de soporte compacto para movimiento de mallas en problemas aerolásticos

A comparison between PML, infinite elements and an iterative BEM as mesh truncation methods for HP self-adaptive procedures in electromagnetics

Finite element hp-adaptivity is a technology that allows for very accurate numerical solutions. When applied to open region problems such as radar cross section prediction or antenna analysis, a mesh truncation method needs to be used. This paper compares the following mesh truncation methods in the context of hp-adaptive methods: Infinite Elements, Perfectly Matched Layers and an iterative boundary element based methodology. These methods have been selected because they are exact at the continuous level (a desirable feature required by the extreme accuracy delivered by the hp-adaptive strategy) and they are easy to integrate with the logic of hp-adaptivity. The comparison is mainly based on the number of degrees of freedom needed for each method to achieve a given level of accuracy. Computational times are also included. Two-dimensional examples are used, but the conclusions directly extrapolated to the three dimensional case.

CFD modelling of the interaction between the Surface Boundary Layer and rotor wake. Comparison of results obtained with different turbulence models and mesh strategies

A simplified CFD wake model based on the actuator disk concept is used to simulate the wind turbine, represented by a disk upon which a distribution of forces, defined as axial momentum sources, are applied on the incoming non-uniform flow. The rotor is supposed to be uniformly loaded, with the exerted forces function of the incident wind speed, the thrust coefficient and the rotor diameter. The model is tested under different parameterizations of turbulence models and validated through experimental measurements downwind of a wind turbine in terms of wind speed deficit and turbulence intensity.

Mesh traversal and sorting for efficient memory usage in scientific codes

Applications that operate on meshes are very popular in High Performance Computing (HPC) environments. In the past, many techniques have been developed in order to optimize the memory accesses for these datasets. Different loop transformations and domain decompositions are com- monly used for structured meshes. However, unstructured grids are more challenging. The memory accesses, based on the mesh connectivity, do not map well to the usual lin- ear memory model. This work presents a method to improve the memory performance which is suitable for HPC codes that operate on meshes. We develop a method to adjust the sequence in which the data are used inside the algorithm, by means of traversing and sorting the mesh. This sorted mesh can be transferred sequentially to the lower memory levels and allows for minimum data transfer requirements. The method also reduces the lower memory requirements dra- matically: up to 63% of the L1 cache misses are removed in a traditional cache system. We have obtained speedups of up to 2.58 on memory operations as measured in a general- purpose CPU. An improvement is also observed with se- quential access memories, where we have observed reduc- tions of up to 99% in the required low-level memory size.

Experimental verification of intermediate band formation on titanium-implanted silicon

Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28?eV below the conduction band for implantation doses in the range 1013-1014 at./cm2. For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n+/n junction.

Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

Mechanical Characterization of Tungsten-Titanium-Lanthana alloy: Influence of Temperature and Atmosphere

The target is to evaluate the mechanical behavior of Ti and La2O3 dispersed W alloy, processed by HIP and compare it with a reference pure-W. Tests were performed in both oxidant (air) and inert (vacuum) atmosphere in a temperature range from -196 to 1200 °C.

Influence of Temperature and Atmosphere in Tungsten-Titanium-Lanthana Alloys

The most promising materials to be used as Plasma Facing Components(PFC),in the International Thermonuclear Experimental Reactor (ITER), are tungsten alloys. However these materials have to withstand extreme operating conditions such as those that will be used inside the reactor.

Multiscale modeling of a small punch test on nanostructured CP titanium

Small punch (SP) test techniques are typically used to study the mechanical properties of materials or components from miniature size specimens. This kind of test was originally developed to assess ductility loss in steel caused by irradiation or thermal treatment, particularly when the amount of metal was limited, but it soon proved to be a powerful method to estimate several properties.

Two-dimensional mesh optimization in the finite element method

The solution to the problem of finding the optimum mesh design in the finite element method with the restriction of a given number of degrees of freedom, is an interesting problem, particularly in the applications method. At present, the usual procedures introduce new degrees of freedom (remeshing) in a given mesh in order to obtain a more adequate one, from the point of view of the calculation results (errors uniformity). However, from the solution of the optimum mesh problem with a specific number of degrees of freedom some useful recommendations and criteria for the mesh construction may be drawn. For 1-D problems, namely for the simple truss and beam elements, analytical solutions have been found and they are given in this paper. For the more complex 2-D problems (plane stress and plane strain) numerical methods to obtain the optimum mesh, based on optimization procedures have to be used. The objective function, used in the minimization process, has been the total potential energy. Some examples are presented. Finally some conclusions and hints about the possible new developments of these techniques are also given.

Towards a new generation of solar cells: silicon supersaturated with titanium or vanadium

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) and titanium (Ti) at different doses and subsequently processed by pulsed-laser melting.