The role of a firm's absorptive capacity and the technology transfer process in clusters: How effective are technology centres in low-tech clusters?

This paper analyses how the internal resources of small- and medium-sized enterprises determine access (learning processes) to technology centres (TCs) or industrial research institutes (innovation infrastructure) in traditional low-tech clusters. These interactions basically represent traded (market-based) transactions, which constitute important sources of knowledge in clusters. The paper addresses the role of TCs in low-tech clusters, and uses semi-structured interviews with 80 firms in a manufacturing cluster. The results point out that producer–user interactions are the most frequent; thus, the higher the sector knowledge-intensive base, the more likely the utilization of the available research infrastructure becomes. Conversely, the sectors with less knowledge-intensive structures, i.e. less absorptive capacity (AC), present weak linkages to TCs, as they frequently prefer to interact with suppliers, who act as transceivers of knowledge. Therefore, not all the firms in a cluster can fully exploit the available research infrastructure, and their AC moderates this engagement. In addition, the existence of TCs is not sufficient since the active role of a firm's search strategies to undertake interactions and conduct openness to available sources of knowledge is also needed. The study has implications for policymakers and academia.

Secundary school profile in science and technology versus the first year at the Technical University of Madrid. Cause of failure or quitting?

Se analiza el absentismo, el fallo y el abandono de los estudiantes en los primeros semestres del grado sobre la base de su formación en la educación secundaria.

WiMAX,Technology and Market.

Wireless communication is the transfer of information from one place to another without using wires. From the earliest times, humans have felt the need to develop techniques of remote communication. From this need arose the smoke signals, communication by sun reflection in mirrors and so on. But today the telecommunications electronic devices such as telephone, television, radio or computer. Radio and television are used for one-way communication. Telephone and computer are used for two-way communication. In wireless networks there is almost unlimited mobility, we can access the network almost anywhere or anytime. In wired networks we have the restriction of using the services in fixed area services. The demand of the wireless is increasing very fast; everybody wants broadband services anywhere anytime. WiMAX (Worldwide Interoperability for Microwave Access) is a broadband wireless technology based on IEEE 802.16-2004 and IEEE 802.16e-2005 that appears to solve this demand. WIMAX is a system that allows wireless data transmission in areas of up to 48 km of radius. It is designed as a wireless alternative to ADSL and a way to connect nodes in wireless metropolitan areas network. Unlike wireless systems that are limited in most cases, about 100 meter, providing greater coverage and more bandwidth. WIMAX promises to achieve high data transmission rates over large areas with a great amount of users. This alternative to the networks of broadband access common as DSL o Wi-Fi, can give broadband access to places quickly to rural areas and developing areas around the world. This paper is a study of WIMAX technology and market situation. First, the paper is responsible for explaining the technical aspects of WIMAX. For this gives an overview of WIMAX standards, physical layer, MAC layer and WiMAX, Technology and Market Beijing University of Post and Telecommunications 2 WIMAX network architecture. Second, the paper address the issue of market in which provides an overview of development and deployment of WIMAX to end the future development trend of WIMAX is addressed. RESUMEN: Por comunicaciones inalámbricas se entiende la transferencia de información desde un lugar a otro sin la necesidad de un soporte físico como es por ejemplo el cable. Por lo que remontándose a los principios de la existencia del ser humano, nos damos cuenta de que el ser humano siempre ha sentido la necesidad de desarrollar técnicas para lograr comunicarse a distancia con sus semejantes. De dicha necesidad, surgieron técnicas tan ancestrales como puede ser la comunicación mediante señales de humo o por reflexión de los rayos solares en espejos entre otras. La curiosidad del ser humano y la necesidad de comunicarse a distancia fue la que llevó a Alexander Graham Bell a inventar el teléfono en 1876. La aparición de un dispositivo que permitía comunicarse a distancia permitiendo escuchar la voz de aquella persona con la que se quería hablar, supuso una revolución no solo en el panorama tecnológico, si no también en el panorama social. Pues a parte de permitir comunicaciones a larga distancia, solventó el problema de la comunicación en “tiempo real”. A raíz de este invento, la tecnología en materia de comunicación ha ido avanzando significativamente, más concretamente en lo referido a las comunicaciones inalámbricas. En 1973 se realizó la primera llamada desde un terminal móvil aunque no fue hasta 1983 cuando se empezó a comercializar dicho terminal, lo que supuso un cambio de hábitos y costumbres para la sociedad. Desde la aparición del primer móvil el crecimiento del mercado ha sido exponencial, lo que ha repercutido en una demanda impensable de nuevas aplicaciones integradas en dichos dispositivos móviles que satisfagan las necesidades que día a día autogenera la sociedad. Tras conseguir realizar llamadas a larga distancia de forma inalámbrica, el siguiente paso fue la creación de los SMS (Short Message System) lo que supuso una nueva revolución además de abaratar costes al usuario a la hora de comunicarse. Pero el gran reto para la industria de las comunicaciones móviles surgió con la aparición de internet. Todo el mundo sentía la necesidad de poder conectarse a esa gran base de datos que es internet en cualquier parte y en cualquier momento. Las primeras conexiones a internet desde dispositivos móviles se realizaron a través de la tecnología WAP (Wireless Application Protocol) hasta la aparición de la tecnología GPRS que permitía la conexión mediante protocolo TCP/IP. A partir de estas conexiones han surgido otras tecnologías, como EDGE, HSDPA, etc., que permitían y permiten la conexión a internet desde dispositivos móviles. Hoy en día la demanda de servicios de red inalámbrica crece de forma rápida y exponencial, todo el mundo quiere servicios de banda ancha en cualquier lugar y en cualquier momento. En este documento se analiza la tecnología WiMAX ( Worldwide Interoperability for Microwave Access) que es una tecnología de banda ancha basada en el estándar IEEE 802.16 creada para brindar servicios a la demanda emergente en la banda ancha desde un punto de vista tecnológico, donde se da una visión de la parte técnica de la tecnología; y desde el punto de vista del mercado, donde se analiza el despliegue y desarrollo de la tecnología desde el punto de vista de negocio. WiMAX es una tecnología que permite la transmisión inalámbrica de datos en áreas de hasta 48Km de radio y que está diseñada como alternativa inalámbrica para ADSL y para conectar nodos de red inalámbrica en áreas metropolitanas. A diferencia de los sistemas inalámbricos existentes que están limitados en su mayoría a unos cientos de metros, WiMAX ofrece una mayor cobertura y un mayor ancho de banda que permita dar soporte a nuevas aplicaciones, además de alcanzar altas tasas de transmisión de datos en grandes áreas con una gran cantidad de usuarios. Se trata de una alternativa a las redes de acceso de banda ancha como DSL o Wi-Fi, que puede dar acceso de banda ancha a lugares tales como zonas rurales o zonas en vías de desarrollo por todo el mundo con rapidez. Existen dos tecnologías de WiMAX, WiMAX fijo (basado en el estándar IEEE 802.16d-2004) y WiMAX móvil (basado en el estándar IEEE 802.16e-2005). La tecnología fija está diseñada para comunicaciones punto a multipunto, mientras que la fija lo está para comunicaciones multipunto a multipunto. WiMAX móvil se basa en la tecnología OFDM que ofrece ventajas en términos de latencia, eficiencia en el uso del espectro y soporte avanzado para antenas. La modulación OFDM es muy robusta frente al multitrayecto, que es muy habitual en los canales de radiodifusión, frente al desvanecimiento debido a las condiciones meteorológicas y frente a las interferencias de RF. Una vez creada la tecnología WiMAX, poseedora de las características idóneas para solventar la demanda del mercado, ha de darse el siguiente paso, hay que convencer a la industria de las telecomunicaciones de que dicha tecnología realmente es la solución para que apoyen su implantación en el mercado de la banda ancha para las redes inalámbricas. Es aquí donde entra en juego el estudio del mercado que se realiza en este documento. WiMAX se enfrenta a un mercado exigente en el que a parte de tener que dar soporte a la demanda técnica, ha de ofrecer una rentabilidad económica a la industria de las comunicaciones móviles y más concretamente a las operadoras móviles que son quienes dentro del sector de las telecomunicaciones finalmente han de confiar en la tecnología para dar soporte a sus usuarios ya que estos al fin y al cabo lo único que quieren es que su dispositivo móvil satisfaga sus necesidades independientemente de la tecnología que utilicen para tener acceso a la red inalámbrica de banda ancha. Quizás el mayor problema al que se ha enfrentado WiMAX haya sido la situación económica en la que se encuentra el mundo. WiMAX a comenzado su andadura en uno de los peores momentos, pero aun así se presenta como una tecnología capaz de ayudar al mundo a salir hacia delante en estos tiempos tan duros. Finalmente se analiza uno de los debates existentes hoy en día en el sector de las comunicaciones móviles, WiMAX vs. LTE. Como se puede observar en el documento realmente una tecnología no saldrá victoriosa frente a la otra, si no que ambas tecnologías podrán coexistir y trabajar de forma conjunta.

Characterization of thin film PV modules under standard test conditions: Results of indoor and outdoor measurements and the effects of sunlight exposure

Photovoltaic modules based on thin film technology are gaining importance in the photovoltaic market, and module installers and plant owners have increasingly begun to request methods of performing module quality control. These modules pose additional problems for measuring power under standard test conditions (STC), beyond problems caused by the temperature of the module and the ambient variables. The main difficulty is that the modules’ power rates may vary depending both on the amount of time they have been exposed to the sun during recent hours and on their history of sunlight exposure. In order to assess the current state of the module, it is necessary to know its sunlight exposure history. Thus, an easily accomplishable testing method that ensures the repeatability of the measurements of the power generated is needed. This paper examines different tests performed on commercial thin film PV modules of CIS, a-Si and CdTe technologies in order to find the best way to obtain measurements. A method for obtaining indoor measurements of these technologies that takes into account periods of sunlight exposure is proposed. Special attention is paid to CdTe as a fast growing technology in the market.

Territory and the governmentalisation of social reproduction: parliamentary enclosure and spatial rationalities in the transition from feudalism to capitalism

Recent applications of Foucauldian categories in geography, spatial history and the history of town planning have opened up interesting new perspectives, with respect to both the evolution of spatial knowledge and the genealogy of territorial techniques and their relation to larger socio-political projects, that would be enriched if combined with other discursive traditions. This article proposes to conceptualise English parliamentary enclosureea favourite episode for Marxist historiography, frequently read in a strictly materialist fashioneas a precedent of a new form of sociospatial governmentality, a political technology that inaugurates a strategic manipulation of territory for social change on the threshold between feudal and capitalist spatial rationalities. I analyse the sociospatial dimensions of parliamentary enclosure’s technical and legal innovations and compare them to the forms of communal self-regulation of land use customs and everyday regionalisations that preceded it. Through a systematic, replicable mechanism of reterritorialisation, enclosure acts normalised spatial regulations, blurred regional differences in the social organisation of agriculture and erased the modes of autonomous social reproduction linked to common land. Their exercise of dispossession of material resources, social capital and community representations is interpreted therefore as an inaugural logic that would pervade the emergent spatial rationality later known as planning.

The seminar of nuclear safety in advanced reactors and the seminar of nuclear fusion: two formative initiatives from Universidad Politécnica de Madrid and spanish young Generation in Nuclear (Jóvenes Nucleares)

panish Young Generation in Nuclear (Jóvenes Nucleares) is a commission of the Spanish Nuclear Society (SNE), whose main goals are to spread knowledge about nuclear energy among the society. Following this motivation, two Seminars have been carried out with the collaboration of the Technical University of Madrid: The Seminar of Nuclear Safety in Advanced Reactors (SRA) and the Seminar of Nuclear Fusion (SFN). The first one, which has been celebrated every year since 2010, aims to show clearly the advances that have been obtained in the section of safety with the new reactors, from a technical but simple point of view and without needing great previous nuclear engineering knowledge. The second one, which first edition was held in 2011, aims to give a general overview of the past, present and future situation of nuclear fusion technology, and was born as a result of the increasing interest of our Spanish Young Generation members in this technology.

Territory and the governmentalisation of social reproduction: parliamentary enclosure and spatial rationalities in the transition from feudalism to capitalism

Recent applications of Foucauldian categories in geography, spatial history and the history of town planning have opened up interesting new perspectives, with respect to both the evolution of spatial knowledge and the genealogy of territorial techniques and their relation to larger socio-political projects, that would be enriched if combined with other discursive traditions. This article proposes to conceptualise English parliamentary enclosureea favourite episode for Marxist historiography, frequently read in a strictly materialist fashioneas a precedent of a new form of sociospatial governmentality, a political technology that inaugurates a strategic manipulation of territory for social change on the threshold between feudal and capitalist spatial rationalities. I analyse the sociospatial dimensions of parliamentary enclosure’s technical and legal innovations and compare them to the forms of communal self-regulation of land use customs and everyday regionalisations that preceded it. Through a systematic, replicable mechanism of reterritorialisation, enclosure acts normalised spatial regulations, blurred regional differences in the social organisation of agriculture and erased the modes of autonomous social reproduction linked to common land. Their exercise of dispossession of material resources, social capital and community representations is interpreted therefore as an inaugural logic that would pervade the emergent spatial rationality later known as planning.

Space demostration of bare electrodynamic tape-tether technology on the sounding rocket S520-25

A spaceflight validation of bare electro dynamic tape tether technology was conducted. A S520-25 sounding rocket was launched successfully at 05:00am on 31 August 2010 and successfully deployed 132.6m of tape tether over 120 seconds in a ballistic flight. The electrodynamic performance of the bare tape tether employed as an atmospheric probe was measured. Flight results are introduced through the present progressive report of the demonstration and the results of flight experiment are examined as the premier report of the international cooperation between Japan, Europe, USA and Australia. Future plans for maturing space tether technology, which will play an important role for future space activities, are also discussed.

Efficiency analysis of information technology and online social networks management : an integrated DEA-Model assessment

This paper analyses the relationship between productive efficiency and online-social-networks (OSN) in Spanish telecommunications firms. A data-envelopment-analysis (DEA) is used and several indicators of business ?social Media? activities are incorporated. A super-efficiency analysis and bootstrapping techniques are performed to increase the model?s robustness and accuracy. Then, a logistic regression model is applied to characterise factors and drivers of good performance in OSN. Results reveal the company?s ability to absorb and utilise OSNs as a key factor in improving the productive efficiency. This paper presents a model for assessing the strategic performance of the presence and activity in OSN.

Thin Client Technology in the Academic Environment

From research groups at the universities of developed countries there is a growing interest in providing solutions to problems of developing countries. In this context we have studied typical problems in many (educational) institutions, such as the lack of technicians who repair the computers, the administration of the machines, and also the difficulty to maintain and configure the old hardware available due to the variety of characteristics of the different machines and the amount of hardware breakdowns and software issues (viruses, administration issues) that the local staff has to face up to with their equipments. We propose a thin client approach that takes into account the human, hardware and software characteristics of developing institutions to provide a complete service for a computer network. The network administration is reduced to the administration of one server only. The maintenance of the machines is simplified and old computers can simulate the running of a powerful computer. Our proposal results in a cheap, simple (from the support point of view) and powerful (in terms of achieved functionalities) design.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

The educational learning lifecycle and the cloud computing

Currently, student dropout rates are a matter of concern among universities. Many research studies, aimed at discovering the causes, have been carried out. However, few solutions, that could serve all students and related problems, have been proposed so far. One such problem is caused by the lack of the "knowledge chain educational links" that occurs when students move onto higher studies without mastering their basic studies. Most regulated studies imparted at universities are designed so that some basic subjects serve as support for other, more complicated, subjects, thus forming a complicated knowledge network. When a link in this chain fails, student frustration occurs as it prevents him from fully understanding the following educational links. In this proposal we try to mitigate these disasters that stem, for the most part, the student?s frustration beyond his college stay. On one hand, we make a dissertation on the student?s learning process, which we divide into a series of phases that amount to what we call the "learning lifecycle." Also, we analyze at what stage the action by the stakeholders involved in this scenario: teachers and students; is most important. On the other hand, we consider that Information and Communication Technologies ICT, such as Cloud Computing, can help develop new ways, allowing for the teaching of higher education, while easing and facilitating the student?s learning process. But, methods and processes need to be defined as to direct the use of such technologies; in the teaching process in general, and within higher education in particular; in order to achieve optimum results. Our methodology integrates, as another actor, the ICT into the "Learning Lifecycle". We stimulate students to stop being merely spectators of their own education, and encourage them to take an active part in their training process. To do this, we offer a set of useful tools to determine not only academic failure causes, (for self assessment), but also to remedy these failures (with corrective actions); "discovered the causes it is easier to determine solutions?. We believe this study will be useful for both students and teachers. Students learn from their own experience and improve their learning process, while obtaining all of the "knowledge chain educational links? required in their studies. We stand by the motto "Studying to learn instead of studying to pass". Teachers will also be benefited by detecting where and how to strengthen their teaching proposals. All of this will also result in decreasing dropout rates.

Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se2 (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.

Application of low cost technology for the management of irrigation in organic orchards

Throughout history, humans have cyclically return to their old traditions such as the organic orchards. Nowadays, these have been integrated into the modern cities and could supply fresh vegetables to the daily food improving human health. Organic orchards grow crops without pesticides and artificial fertilizers thus, they are respectful with the environment and guarantee the food's safety . In modern society, the application of new technology is a must, in this case to obtain an efficient irrigation. In order to monitor a proper irrigation and save water and energy, soil water content probes are used to measure soil water content. Among them, capacitive probes ,monitored with a specific data logger, are typically used. Most of them, specially the data loggers, are expensive and in many cases are not used. In this work, we have applied the open hardware Arduino to build and program a low cost datalogger for the programming of irrigation in an experimental organic orchard. Results showed that the application of such as low cost technology, which is easily available in the market and easy to understand, everyone can built and program its own device helping in managing water resources in organic orchards .

A multi-level analysis of innovation diffusion: The case of solar photovoltaic systems in Germany and the disillusion of grid parity

¿Suministrarán las fuentes de energía renovables toda la energía que el mundo necesita algún día? Algunos argumentan que sí, mientras que otros dicen que no. Sin embargo, en algunas regiones del mundo, la producción de electricidad a través de fuentes de energía renovables ya está en una etapa prometedora de desarrollo en la que su costo de generación de electricidad compite con fuentes de electricidad convencionales, como por ejemplo la paridad de red. Este logro ha sido respaldado por el aumento de la eficiencia de la tecnología, la reducción de los costos de producción y, sobre todo, los años de intervenciones políticas de apoyo financiero. La difusión de los sistemas solares fotovoltaicos (PV) en Alemania es un ejemplo relevante. Alemania no sólo es el país líder en términos de capacidad instalada de sistemas fotovoltaicos (PV) en todo el mundo, sino también uno de los países pioneros donde la paridad de red se ha logrado recientemente. No obstante, podría haber una nube en el horizonte. La tasa de difusión ha comenzado a declinar en muchas regiones. Además, las empresas solares locales – que se sabe son importantes impulsores de la difusión – han comenzado a enfrentar dificultades para manejar sus negocios. Estos acontecimientos plantean algunas preguntas importantes: ¿Es ésta una disminución temporal en la difusión? ¿Los adoptantes continuarán instalando sistemas fotovoltaicos? ¿Qué pasa con los modelos de negocio de las empresas solares locales? Con base en el caso de los sistemas fotovoltaicos en Alemania a través de un análisis multinivel y dos revisiones literarias complementarias, esta tesis doctoral extiende el debate proporcionando riqueza múltiple de datos empíricos en un conocimiento de contexto limitado. El primer análisis se basa en la perspectiva del adoptante, que explora el nivel "micro" y el proceso social que subyace a la adopción de los sistemas fotovoltaicos. El segundo análisis es una perspectiva a nivel de empresa, que explora los modelos de negocio de las empresas y sus roles impulsores en la difusión de los sistemas fotovoltaicos. El tercero análisis es una perspectiva regional, la cual explora el nivel "meso", el proceso social que subyace a la adopción de sistemas fotovoltaicos y sus técnicas de modelado. Los resultados incluyen implicaciones tanto para académicos como políticos, no sólo sobre las innovaciones en energía renovable relativas a la paridad de red, sino también, de manera inductiva, sobre las innovaciones ambientales impulsadas por las políticas que logren la competitividad de costes. ABSTRACT Will renewable energy sources supply all of the world energy needs one day? Some argue yes, while others say no. However, in some regions of the world, the electricity production through renewable energy sources is already at a promising stage of development at which their electricity generation costs compete with conventional electricity sources’, i.e., grid parity. This achievement has been underpinned by the increase of technology efficiency, reduction of production costs and, above all, years of policy interventions of providing financial support. The diffusion of solar photovoltaic (PV) systems in Germany is an important frontrunner case in point. Germany is not only the top country in terms of installed PV systems’ capacity worldwide but also one of the pioneer countries where the grid parity has recently been achieved. However, there might be a cloud on the horizon. The diffusion rate has started to decline in many regions. In addition, local solar firms – which are known to be important drivers of diffusion – have started to face difficulties to run their businesses. These developments raise some important questions: Is this a temporary decline on diffusion? Will adopters continue to install PV systems? What about the business models of the local solar firms? Based on the case of PV systems in Germany through a multi-level analysis and two complementary literature reviews, this PhD Dissertation extends the debate by providing multiple wealth of empirical details in a context-limited knowledge. The first analysis is based on the adopter perspective, which explores the “micro” level and the social process underlying the adoption of PV systems. The second one is a firm-level perspective, which explores the business models of firms and their driving roles in diffusion of PV systems. The third one is a regional perspective, which explores the “meso” level, i.e., the social process underlying the adoption of PV systems and its modeling techniques. The results include implications for both scholars and policymakers, not only about renewable energy innovations at grid parity, but also in an inductive manner, about policy-driven environmental innovations that achieve the cost competiveness.