Distributed Data Management in 2020?

Work on distributed data management commenced shortly after the introduction of the relational model in the mid-1970's. 1970's and 1980's were very active periods for the development of distributed relational database technology, and claims were made that in the following ten years centralized databases will be an “antique curiosity” and most organizations will move toward distributed database managers [1]. That prediction has certainly become true, and all commercial DBMSs today are distributed.

Highly efficient potentiometric glucose biosensor based on functionalized InN quantum dots

We present a fast, highly sensitive, and efficient potentiometric glucose biosensor based on functionalized InN quantum-dots (QDs). The InN QDs are grown by molecular beam epitaxy. The InN QDs are bio-chemically functionalized through physical adsorption of glucose oxidase (GOD). GOD enzyme-coated InN QDs based biosensor exhibits excellent linear glucose concentration dependent electrochemical response against an Ag/AgCl reference electrode over a wide logarithmic glucose concentration range (1 × 10−5 M to 1 × 10−2 M) with a high sensitivity of 80 mV/decade. It exhibits a fast response time of less than 2 s with good stability and reusability and shows negligible response to common interferents such as ascorbic acid and uric acid. The fabricated biosensor has full potential to be an attractive candidate for blood sugar concentration detection in clinical diagnoses.

Engineering analysis of ITER In-Vessel Viewing System guide tube

The In Vessel Viewing System (IVVS) will be one of the essential machine diagnostic systems at ITER to provide information about the status of in-vessel and plasma facing components and to evaluate the dust inside the Vacuum Vessel. The current design consists of six scanning probes and their deployment systems, which are placed in dedicated ports at the divertor level. These units are located in resident guiding tubes 10 m long, which allow the IVVS probes to go from their storage location to the scanning position by means of a simple straight translation. Moreover, each resident tube is supported inside the corresponding Vacuum Vessel and Cryostat port extensions, which are part of the primary confinement barrier. As the Vacuum Vessel and the Cryostat will move with respect to each other during operation (especially during baking) and during incidents and accidents (disruptions, vertical displacement events, seismic events), the structural integrity of the resident tube and the surrounding vacuum boundaries would be compromised if the required flexibility and supports are not appropriately assured. This paper focuses on the integration of the present design of the IVVS into the Vacuum Vessel and Cryostat environment. It presents the adopted strategy to withstand all the main interfacing loads without damaging the confinement barriers and the corresponding analysis supporting it.

Stranski-Krastanov InN/InGaN quantum dots grown directly on Si(111)

The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

Electrocatalytic oxidation enhancement at the surface of InGaN films and nanostructures grown directly on Si(111)

Pronounced electrocatalytic oxidation enhancement at the surface of InGaN layers and nanostructures directly grown on Si by plasma-assisted molecular beam epitaxy is demonstrated. The oxidation enhancement, probed with the ferro/ferricyanide redox couple increases with In content and proximity of nanostructure surfaces and sidewalls to the c-plane. This is attributed to the corresponding increase of the density of intrinsic positively charged surface donors promoting electron transfer. Strongest enhancement is for c-plane InGaN layers functionalized with InN quantum dots (QDs). These results explain the excellent performance of our InN/InGaN QD biosensors and water splitting electrodes for further boosting efficiency.