Air-steam gasification of sewage sludge in a bubbling bed reactor: Effect of alumina as a primary catalyst

Numerous references can be found in scientific literature regarding biomass gasification. However, there are few works related to sludge gasification. A study of sewage sludge gasification process in a bubbling fluidised bed gasifier on a laboratory scale is here reported. The aim was to find the optimum conditions for reducing the production of tars and gain more information on the influx of different operating variables in the products resulting from the gasification of this waste. The variables studied were the equivalence ratio (ER), the steam-biomass ratio (SB) and temperature. Specifically, the ER was varied from 0.2 to 0.4, the SB from 0 to 1 and the temperature from 750 °C (1023 K) to 850 °C (1123 K). Although it was observed that tar production could be considerably reduced (up to 72%) by optimising the gasification conditions, the effect of using alumina (aluminium oxide, of proven efficacy in destroying the tar produced in biomass gasification) as primary catalyst in air and air-steam mixture tests was also verified. The results show that by adding small quantities of alumina to the bed (10% by weight of fed sludge) considerable reductions in tar production can be obtained (up to 42%) improving, at the same time, the lower heating value (LHV) of the gas and carbon conversion.

Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

In order to clarify the effect of charged dislocations and surface donor states on the transport mechanisms in polar AlInN/AlN/GaN heterostructures, we have studied the current-voltage characteristics of Schottky junctions fabricated on AlInN/AlN/GaN heterostructures. The reverse-bias leakage current behaviour has been interpreted with a Poole-Frenkel emission of electrons from trap states near the metal-semiconductor junction to dislocation induced states. The variation of the Schottky barrier height as a function of the AlN layer thickness has been measured and discussed, considering the role of the surface states in the formation of the two dimensional electron gas at AlN/GaN interface.