Stopping power dependence of nitrogen sputtering yields in copper nitride films under swift-ion irradiation: Exciton model approach

Nitrogen sputtering yields as high as 104 atoms/ion, are obtained by irradiating N-rich-Cu3N films (N concentration: 33 ± 2 at.%) with Cu ions at energies in the range 10?42 MeV. The kinetics of N sputtering as a function of ion fluence is determined at several energies (stopping powers) for films deposited on both, glass and silicon substrates. The kinetic curves show that the amount of nitrogen release strongly increases with rising irradiation fluence up to reaching a saturation level at a low remaining nitrogen fraction (5?10%), in which no further nitrogen reduction is observed. The sputtering rate for nitrogen depletion is found to be independent of the substrate and to linearly increase with electronic stopping power (Se). A stopping power (Sth) threshold of ?3.5 keV/nm for nitrogen depletion has been estimated from extrapolation of the data. Experimental kinetic data have been analyzed within a bulk molecular recombination model. The microscopic mechanisms of the nitrogen depletion process are discussed in terms of a non-radiative exciton decay model. In particular, the estimated threshold is related to a minimum exciton density which is required to achieve efficient sputtering rates.

Impact of Impurities on the Mechanical Strength of Multicrystalline Silicon

The usage of more inexpensive silicon feedstock for crystallizing mc-Si blocks promises cost reduction for the photovoltaic market. For example, less expensive substrates of upgraded metallurgical silicon (UMG-Si) are used as a mechanical support for the epitaxial solar cell. This feedstock has higher content of impurities which influences cell performance and mechanical strength of the wafers. Thus, it is of importance to know these effects in order to know which impurities should be preferentially removed or prevented during the crystallization process. Metals like aluminum (Al) can decrease the mechanical strength due to micro-cracking of the silicon matrix and introduction of high values of thermal residual stress. Additionally, silicon oxide (SiOx) lowers the mechanical strength of mc-Si due to thermal residual stresses and stress intensification when an external load is applied in the surrounding of the particle. Silicon carbide (SiC) introduces thermal residual stresses and intensifies slightly the stress in the surrounding of the particle but can have a toughening effect on the silicon matrix. Finally, silicon nitride (Si3N4) does not influence significantly the mechanical strength of mc- Si and can have a toughening effect on the silicon matrix.

Influence of high aluminium content on the mechanical properties of directionally solidified multicrystalline silicon

The purpose of this research is the mechanical characterisation of multicrystalline silicon crystallised from silicon feedstock with a high content of aluminium for photovoltaic applications. The mechanical strength, fracture toughness and elastic modulus were measured at different positions within the multicrystalline silicon block to quantify the impact of the segregation of impurities on these mechanical properties. Aluminium segregated to the top of the block and caused extensive micro-cracking of the silicon matrix due to the thermal mismatch between silicon and the aluminium inclusions. Silicon nitride inclusions reduced the fracture toughness and caused failure by radial cracking in its surroundings due to its thermal mismatch with silicon. However, silicon carbide increased the fracture toughness and elastic modulus of silicon.