In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures

Si(100) and Ge(100) substrates essential for subsequent III-V integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. Reflectance anisotropy spectroscopy (RAS) enabled us to distinguish characteristic configurations of vicinal Si(100) in situ: covered with oxide, cleaned by thermal removing in H2, and terminated with monohydrides when cooling in H2 ambient. RAS measurements during cooling in H2 ambient after the oxide removal process revealed a transition from the clean to the monohydride terminated Si(100) surface dependent on process temperature. For vicinal Ge(100) we observed a characteristic RA spectrum after annealing and cooling in H2 ambient. According to results from X-ray photo electron spectroscopy and Fourier-transform infrared spectroscopy the spectrum corresponds to the monohydride terminated Ge(100) surface.

Analysis of the Mechanical Properties of Multicrystalline and Monocrystalline Silicon Wafers Manufactured by Casting Methods

Quasi-monocrystalline silicon wafers have appeared as a critical innovation in the PV industry, joining the most favourable characteristics of the conventional substrates: the higher solar cell efficiencies of monocrystalline Czochralski-Si (Cz-Si) wafers and the lower cost and the full square-shape of the multicrystalline ones. However, the quasi-mono ingot growth can lead to a different defect structure than the typical Cz-Si process. Thus, the properties of the brand-new quasi-mono wafers, from a mechanical point of view, have been for the first time studied, comparing their strength with that of both Cz-Si mono and typical multicrystalline materials. The study has been carried out employing the four line bending test and simulating them by means of FE models. For the analysis, failure stresses were fitted to a three-parameter Weibull distribution. High mechanical strength was found in all the cases. The low quality quasi-mono wafers, interestingly, did not exhibit critical strength values for the PV industry, despite their noticeable density of extended defects.

About the origin of low wafer performance and crystal defect generation on seed-cast growth of industrial mono-like silicon ingots

The era of the seed-cast grown monocrystalline-based silicon ingots is coming. Mono-like, pseudomono or quasimono wafers are product labels that can be nowadays found in the market, as a critical innovation for the photovoltaic industry. They integrate some of the most favorable features of the conventional silicon substrates for solar cells, so far, such as the high solar cell efficiency offered by the monocrystalline Czochralski-Si (Cz-Si) wafers and the lower cost, high productivity and full square-shape that characterize the well-known multicrystalline casting growth method. Nevertheless, this innovative crystal growth approach still faces a number of mass scale problems that need to be resolved, in order to gain a deep, 100% reliable and worldwide market: (i) extended defects formation during the growth process; (ii) optimization of the seed recycling; and (iii) parts of the ingots giving low solar cells performance, which directly affect the production costs and yield of this approach. Therefore, this paper presents a series of casting crystal growth experiments and characterization studies from ingots, wafers and cells manufactured in an industrial approach, showing the main sources of crystal defect formation, impurity enrichment and potential consequences at solar cell level. The previously mentioned technological drawbacks are directly addressed, proposing industrial actions to pave the way of this new wafer technology to high efficiency solar cells.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

Effect of nano-Si2O and nano-Al2O3 on cement mortars for use in agriculture and livestock production

The effect of nano-silica, nano-alumina and binary combinations on surface hardness, resistance to abrasion and freeze-thaw cycle resistance in cement mortars was investigated. The Vickers hardness, the Los Angeles coefficient (LA) and the loss of mass in each of the freeze–thaw cycles to which the samples were subjected were measured. Four cement mortars CEM I 52.5R were prepared, one as control, and the other three with the additions: 5% nano-Si, 5% nano-Al and mix 2.5% n-Si and 2.5% n-Al. Mortars were tested at 7, 28 and 90 d of curing to determine compression strength, total porosity and pore distribution by mercury intrusion porosimetry (MIP) and the relationship between the CSH gel and Portlandite total by thermal gravimetric analysis (TGA). The capillary suction coefficient and an analysis by a scanning electron microscope (SEM) was made. There was a large increase in Vickers surface hardness for 5% n-Si mortar and a slight increase in resistance to abrasion. No significant difference was found between the mortars with nano-particles, whose LA was about 10.8, classifying them as materials with good resistance to abrasion. The microstructure shows that the addition of n-Si in mortars refines their porous matrix, increases the amount of hydrated gels and generates significant changes in both Portlandite and Ettringite. This produced a significant improvement in freeze–thaw cycle resistance. The effect of n-Al on mortar was null or negative with respect to freeze–thaw cycle resistance.

Aspectos metodológicos para la evaluación de sistemas de tomografía por emisión de positrones empleando técnicas Montecarlo, protocolos estandarizados y diferentes trazadores

Esta tesis analiza los elementos que afectan a la evaluación del rendimiento dentro de la técnica de radiodiagnóstico mediante tomografía por emisión de positrones (PET), centrándose en escáneres preclínicos. Se exploran las posibilidades de los protocolos estándar de evaluación sobre los siguientes aspectos: su uso como herramienta para validar programas de simulación Montecarlo, como método para la comparación de escáneres y su validez en el estudio del efecto sobre la calidad de imagen al utilizar radioisótopos alternativos. Inicialmente se estudian los métodos de evaluación orientados a la validación de simulaciones PET, para ello se presenta el programa GAMOS como entorno de simulación y se muestran los resultados de su validación basada en el estándar NEMA NU 4-2008 para escáneres preclínicos. Esta validación se ha realizado mediante la comparación de los resultados simulados frente a adquisiciones reales en el equipo ClearPET, describiendo la metodología de evaluación y selección de los parámetros NEMA. En este apartado también se mencionan las aportaciones desarrolladas en GAMOS para aplicaciones PET, como la inclusión de herramientas para la reconstrucción de imágenes. Por otro lado, la evaluación NEMA del ClearPET es utilizada para comparar su rendimiento frente a otro escáner preclínico: el sistema rPET-1. Esto supone la primera caracterización NEMA NU 4 completa de ambos equipos; al mismo tiempo que se analiza cómo afectan las importantes diferencias de diseño entre ellos, especialmente el tamaño axial del campo de visión y la configuración de los detectores. El 68Ga es uno de los radioisótopos no convencionales en imagen PET que está experimentando un mayor desarrollo, sin embargo, presenta la desventaja del amplio rango o distancia recorrida por el positrón emitido. Además del rango del positrón, otra propiedad física característica de los radioisótopos PET que puede afectar a la imagen es la emisión de fotones gamma adicionales, tal como le ocurre al isótopo 48V. En esta tesis se evalúan dichos efectos mediante estudios de resolución espacial y calidad de imagen NEMA. Finalmente, se analiza el alcance del protocolo NEMA NU 4-2008 cuando se utiliza para este propósito, adaptándolo a tal fin y proponiendo posibles modificaciones. Abstract This thesis analyzes the factors affecting the performance evaluation in positron emission tomography (PET) imaging, focusing on preclinical scanners. It explores the possibilities of standard protocols of assessment on the following aspects: their use as tools to validate Monte Carlo simulation programs, their usefulness as a method for comparing scanners and their validity in the study of the effect of alternative radioisotopes on image quality. Initially we study the methods of performance evaluation oriented to validate PET simulations. For this we present the GAMOS program as a simulation framework and show the results of its validation based on the standard NEMA NU 4-2008 for preclinical PET scanners. This has been accomplished by comparing simulated results against experimental acquisitions in the ClearPET scanner, describing the methodology for the evaluation and selection of NEMA parameters. This section also mentions the contributions developed in GAMOS for PET applications, such as the inclusion of tools for image reconstruction. Furthermore, the evaluation of the ClearPET scanner is used to compare its performance against another preclinical scanner, specifically the rPET-1 system. This is the first complete NEMA NU 4 based characterization study of both systems. At the same time we analyze how do the significant design differences of these two systems, especially the size of the axial field of view and the detectors configuration affect their performance characteristics. 68Ga is one of the unconventional radioisotopes in PET imaging the use of which is currently significantly increasing; however, it presents the disadvantage of the long positron range (distance traveled by the emitted positron before annihilating with an electron). Besides the positron range, additional gamma photon emission is another physical property characteristic of PET radioisotopes that can affect the reconstructed image quality, as it happens to the isotope 48V. In this thesis we assess these effects through studies of spatial resolution and image quality. Finally, we analyze the scope of the NEMA NU 4-2008 to carry out such studies, adapting it and proposing possible modifications.

Self-assembled MgxZn1−xO quantum dots (0 ≤ x ≤ 1) on different substrates using spray pyrolysis methodology

By using the spray pyrolysis methodology in its classical configuration we have grown self-assembled MgxZn1−xO quantum dots (size [similar]4–6 nm) in the overall range of compositions 0 ≤ x ≤ 1 on c-sapphire, Si (100) and quartz substrates. Composition of the quantum dots was determined by means of transmission electron microscopy-energy dispersive X-ray analysis (TEM-EDAX) and X-ray photoelectron spectroscopy. Selected area electron diffraction reveals the growth of single phase hexagonal MgxZn1−xO quantum dots with composition 0 ≤ x ≤ 0.32 by using a nominal concentration of Mg in the range 0 to 45%. Onset of Mg concentration about 50% (nominal) forces the hexagonal lattice to undergo a phase transition from hexagonal to a cubic structure which resulted in the growth of hexagonal and cubic phases of MgxZn1−xO in the intermediate range of Mg concentrations 50 to 85% (0.39 ≤ x ≤ 0.77), whereas higher nominal concentration of Mg ≥ 90% (0.81 ≤ x ≤ 1) leads to the growth of single phase cubic MgxZn1−xO quantum dots. High resolution transmission electron microscopy and fast Fourier transform confirm the results and show clearly distinguishable hexagonal and cubic crystal structures of the respective quantum dots. A difference of 0.24 eV was detected between the core levels (Zn 2p and Mg 1s) measured in quantum dots with hexagonal and cubic structures by X-ray photoemission. The shift of these core levels can be explained in the frame of the different coordination of cations in the hexagonal and cubic configurations. Finally, the optical absorption measurements performed on single phase hexagonal MgxZn1−xO QDs exhibited a clear shift in optical energy gap on increasing the Mg concentration from 0 to 40%, which is explained as an effect of substitution of Zn2+ by Mg2+ in the ZnO lattice.

Order 10 4 speedup in global linear instability analysis using matrix formation

A unified solution framework is presented for one-, two- or three-dimensional complex non-symmetric eigenvalue problems, respectively governing linear modal instability of incompressible fluid flows in rectangular domains having two, one or no homogeneous spatial directions. The solution algorithm is based on subspace iteration in which the spatial discretization matrix is formed, stored and inverted serially. Results delivered by spectral collocation based on the Chebyshev-Gauss-Lobatto (CGL) points and a suite of high-order finite-difference methods comprising the previously employed for this type of work Dispersion-Relation-Preserving (DRP) and Padé finite-difference schemes, as well as the Summationby- parts (SBP) and the new high-order finite-difference scheme of order q (FD-q) have been compared from the point of view of accuracy and efficiency in standard validation cases of temporal local and BiGlobal linear instability. The FD-q method has been found to significantly outperform all other finite difference schemes in solving classic linear local, BiGlobal, and TriGlobal eigenvalue problems, as regards both memory and CPU time requirements. Results shown in the present study disprove the paradigm that spectral methods are superior to finite difference methods in terms of computational cost, at equal accuracy, FD-q spatial discretization delivering a speedup of ð (10 4). Consequently, accurate solutions of the three-dimensional (TriGlobal) eigenvalue problems may be solved on typical desktop computers with modest computational effort.

Propuesta de algoritmos de predicción de glucosa en pacientes diabéticos

La diabetes mellitus es el conjunto de alteraciones provocadas por un defecto en la cantidad de insulina secretada o por un aprovechamiento deficiente de la misma. Es causa directa de complicaciones a corto, medio y largo plazo que disminuyen la calidad y las expectativas de vida de las personas con diabetes. La diabetes mellitus es en la actualidad uno de los problemas más importantes de salud. Ha triplicado su prevalencia en los últimos 20 anos y para el año 2025 se espera que existan casi 300 millones de personas con diabetes. Este aumento de la prevalencia junto con la morbi-mortalidad asociada a sus complicaciones micro y macro-vasculares convierten la diabetes en una carga para los sistemas sanitarios, sus recursos económicos y sus profesionales, haciendo de la enfermedad un problema individual y de salud pública de enormes proporciones. De momento no existe cura a esta enfermedad, de modo que el objetivo terapéutico del tratamiento de la diabetes se centra en la normalización de la glucemia intentando minimizar los eventos de hiper e hipoglucemia y evitando la aparición o al menos retrasando la evolución de las complicaciones vasculares, que constituyen la principal causa de morbi-mortalidad de las personas con diabetes. Un adecuado control diabetológico implica un tratamiento individualizado que considere multitud de factores para cada paciente (edad, actividad física, hábitos alimentarios, presencia de complicaciones asociadas o no a la diabetes, factores culturales, etc.). Sin embargo, a corto plazo, las dos variables más influyentes que el paciente ha de manejar para intervenir sobre su nivel glucémico son la insulina administrada y la dieta. Ambas presentan un retardo entre el momento de su aplicación y el comienzo de su acción, asociado a la absorción de los mismos. Por este motivo la capacidad de predecir la evolución del perfil glucémico en un futuro cercano, ayudara al paciente a tomar las decisiones adecuadas para mantener un buen control de su enfermedad y evitar situaciones de riesgo. Este es el objetivo de la predicción en diabetes: adelantar la evolución del perfil glucémico en un futuro cercano para ayudar al paciente a adaptar su estilo de vida y sus acciones correctoras, con el propósito de que sus niveles de glucemia se aproximen a los de una persona sana, evitando así los síntomas y complicaciones de un mal control. La aparición reciente de los sistemas de monitorización continua de glucosa ha proporcionado nuevas alternativas. La disponibilidad de un registro exhaustivo de las variaciones del perfil glucémico, con un periodo de muestreo de entre uno y cinco minutos, ha favorecido el planteamiento de nuevos modelos que tratan de predecir la glucemia utilizando tan solo las medidas anteriores de glucemia o al menos reduciendo significativamente la información de entrada a los algoritmos. El hecho de requerir menor intervención por parte del paciente, abre nuevas posibilidades de aplicación de los predictores de glucemia, haciéndose viable su uso en tiempo real, como sistemas de ayuda a la decisión, como detectores de situaciones de riesgo o integrados en algoritmos automáticos de control. En esta tesis doctoral se proponen diferentes algoritmos de predicción de glucemia para pacientes con diabetes, basados en la información registrada por un sistema de monitorización continua de glucosa así como incorporando la información de la insulina administrada y la ingesta de carbohidratos. Los algoritmos propuestos han sido evaluados en simulación y utilizando datos de pacientes registrados en diferentes estudios clínicos. Para ello se ha desarrollado una amplia metodología, que trata de caracterizar las prestaciones de los modelos de predicción desde todos los puntos de vista: precisión, retardo, ruido y capacidad de detección de situaciones de riesgo. Se han desarrollado las herramientas de simulación necesarias y se han analizado y preparado las bases de datos de pacientes. También se ha probado uno de los algoritmos propuestos para comprobar la validez de la predicción en tiempo real en un escenario clínico. Se han desarrollado las herramientas que han permitido llevar a cabo el protocolo experimental definido, en el que el paciente consulta la predicción bajo demanda y tiene el control sobre las variables metabólicas. Este experimento ha permitido valorar el impacto sobre el control glucémico del uso de la predicción de glucosa. ABSTRACT Diabetes mellitus is the set of alterations caused by a defect in the amount of secreted insulin or a suboptimal use of insulin. It causes complications in the short, medium and long term that affect the quality of life and reduce the life expectancy of people with diabetes. Diabetes mellitus is currently one of the most important health problems. Prevalence has tripled in the past 20 years and estimations point out that it will affect almost 300 million people by 2025. Due to this increased prevalence, as well as to morbidity and mortality associated with micro- and macrovascular complications, diabetes has become a burden on health systems, their financial resources and their professionals, thus making the disease a major individual and a public health problem. There is currently no cure for this disease, so that the therapeutic goal of diabetes treatment focuses on normalizing blood glucose events. The aim is to minimize hyper- and hypoglycemia and to avoid, or at least to delay, the appearance and development of vascular complications, which are the main cause of morbidity and mortality among people with diabetes. A suitable, individualized and controlled treatment for diabetes involves many factors that need to be considered for each patient: age, physical activity, eating habits, presence of complications related or unrelated to diabetes, cultural factors, etc. However, in the short term, the two most influential variables that the patient has available in order to manage his/her glycemic levels are administered insulin doses and diet. Both suffer from a delay between their time of application and the onset of the action associated with their absorption. Therefore, the ability to predict the evolution of the glycemic profile in the near future could help the patient to make appropriate decisions on how to maintain good control of his/her disease and to avoid risky situations. Hence, the main goal of glucose prediction in diabetes consists of advancing the evolution of glycemic profiles in the near future. This would assist the patient in adapting his/her lifestyle and in taking corrective actions in a way that blood glucose levels approach those of a healthy person, consequently avoiding the symptoms and complications of a poor glucose control. The recent emergence of continuous glucose monitoring systems has provided new alternatives in this field. The availability of continuous records of changes in glycemic profiles (with a sampling period of one or five minutes) has enabled the design of new models which seek to predict blood glucose by using automatically read glucose measurements only (or at least, reducing significantly the data input manually to the algorithms). By requiring less intervention by the patient, new possibilities are open for the application of glucose predictors, making its use feasible in real-time applications, such as: decision support systems, hypo- and hyperglycemia detectors, integration into automated control algorithms, etc. In this thesis, different glucose prediction algorithms are proposed for patients with diabetes. These are based on information recorded by a continuous glucose monitoring system and incorporate information of the administered insulin and carbohydrate intakes. The proposed algorithms have been evaluated in-silico and using patients’ data recorded in different clinical trials. A complete methodology has been developed to characterize the performance of predictive models from all points of view: accuracy, delay, noise and ability to detect hypo- and hyperglycemia. In addition, simulation tools and patient databases have been deployed. One of the proposed algorithms has additionally been evaluated in terms of real-time prediction performance in a clinical scenario in which the patient checked his/her glucose predictions on demand and he/she had control on his/her metabolic variables. This has allowed assessing the impact of using glucose prediction on glycemic control. The tools to carry out the defined experimental protocols were also developed in this thesis.

Silicon PV module customization using laser technology for new BIPV applications

It is well known that lasers have helped to increase efficiency and to reduce production costs in the photovoltaic (PV) sector in the last two decades, appearing in most cases as the ideal tool to solve some of the critical bottlenecks of production both in thin film (TF) and crystalline silicon (c-Si) technologies. The accumulated experience in these fields has brought as a consequence the possibility of using laser technology to produce new Building Integrated Photovoltaics (BIPV) products with a high degree of customization. However, to produce efficiently these personalized products it is necessary the development of optimized laser processes able to transform standard products in customized items oriented to the BIPV market. In particular, the production of semitransparencies and/or freeform geometries in TF a-Si modules and standard c-Si modules is an application of great interest in this market. In this work we present results of customization of both TF a-Si modules and standard monocrystalline (m-Si) and policrystalline silicon (pc-Si) modules using laser ablation and laser cutting processes. A discussion about the laser processes parameterization to guarantee the functionality of the device is included. Finally some examples of final devices are presented with a full discussion of the process approach used in their fabrication.

Analysis and design of reconfigurable multimode multiport microstrip antennas for mimo systems and diversity schemes

Las comunicaciones inalámbricas han transformado profundamente la forma en la que la gente se comunica en el día a día y es, sin lugar a dudas, una de las tecnologías de nuestro tiempo que más rápidamente evoluciona. Este rápido crecimiento implica retos enormes en la tecnología subyacente, debido y entre otros motivos, a la gran demanda de capacidad de los nuevos servicios inalámbricos. Los sistemas Multiple Input Multiple Output (MIMO) han despertado mucho interés como medio de mejorar el rendimiento global del sistema, satisfaciendo de este modo y en cierta medida los nuevo requisitos exigidos. De hecho, el papel relevante de esta tecnología en los actuales esfuerzos de estandarización internacionales pone de manifiesto esta utilidad. Los sistemas MIMO sacan provecho de los grados de libertad espaciales, disponibles a través del entorno multitrayecto, para mejorar el rendimiento de la comunicación con una destacable eficiencia espectral. Con el fin de alcanzar esta mejora en el rendimiento, la diversidad espacial y por diagrama han sido empleadas tradicionalmente para reducir la correlación entre los elementos radiantes, ya que una correlación baja es condición necesaria, si bien no suficiente, para dicha mejora. Tomando como referencia, o punto de partida, las técnicas empleadas para obtener diversidad por diagrama, esta tesis doctoral surge de la búsqueda de la obtención de diversidad por diagrama y/o multiplexación espacial a través del comportamiento multimodal de la antena microstrip, proponiendo para ello un modelo cuasi analítico original para el análisis y diseño de antenas microstrip multipuerto, multimodo y reconfigurables. Este novedoso enfoque en este campo, en vez de recurrir a simulaciones de onda completa por medio de herramientas comerciales tal y como se emplea en las publicaciones existentes, reduce significativamente el esfuerzo global de análisis y diseño, en este último caso por medio de guías de diseño generales. Con el fin de lograr el objetivo planteado y después de una revisión de los principales conceptos de los sistemas MIMO que se emplearán más adelante, se fija la atención en encontrar, implementar y verificar la corrección y exactitud de un modelo analítico que sirva de base sobre la cual añadir las mejoras necesarias para obtener las características buscadas del modelo cuasi analítico propuesto. Posteriormente y partiendo del modelo analítico base seleccionado, se exploran en profundidad y en diferentes entornos multitrayecto, las posibilidades en cuanto a rendimiento se refiere de diversidad por diagrama y multiplexación espacial, proporcionadas por el comportamiento multimodal de las antenas parche microstrip sin cargar. Puesto que cada modo de la cavidad tiene su propia frecuencia de resonancia, es necesario encontrar formas de desplazar la frecuencia de resonancia de cada modo empleado para ubicarlas en la misma banda de frecuencia, manteniendo cada modo al mismo tiempo tan independiente como sea posible. Este objetivo puede lograrse cargando adecuadamente la cavidad con cargas reactivas, o alterando la geometría del parche radiante. Por consiguiente, la atención en este punto se fija en el diseño, implementación y verificación de un modelo cuasi analítico para el análisis de antenas parche microstrip multipuerto, multimodo y cargadas que permita llevar a cabo la tarea indicada, el cuál es una de las contribuciones principales de esta tesis doctoral. Finalmente y basándose en el conocimiento adquirido a través del modelo cuasi analítico, se proporcionan y aplican guías generales para el diseño de antenas microstrip multipuerto, multimodo y reconfigurables para sistemas MIMO, con el fin de mejorar su diversidad por diagrama y/o su capacidad por medio del comportamiento multimodal de las antenas parche microstrip. Se debe destacar que el trabajo presentado en esta tesis doctoral ha dado lugar a una publicación en una revista técnica internacional de un alto factor de impacto. De igual manera, el trabajo también ha sido presentado en algunas de las más importantes conferencias internacionales en el ámbito de las antenas ABSTRACT Wireless communications have deeply transformed the way people communicate on daily basis and it is undoubtedly one of the most rapidly evolving technologies of our time. This fast growing behaviour involves huge challenges on the bearing technology, due to and among others reasons, the high demanding capacity of new wireless services. MIMO systems have given rise to considerable interest as a means to enhance the overall system performance, thus satisfying somehow the new demanding requirements. Indeed, the significant role of this technology on current international standardization efforts, highlights this usefulness. MIMO systems make profit from the spatial degrees of freedom available through the multipath scenario to improve the communication performance with a remarkable spectral efficiency. In order to achieve this performance improvement, spatial and pattern diversity have been traditionally used to decrease the correlation between antenna elements, as low correlation is a necessary but not sufficient condition. Taking as a reference, or starting point, the techniques used to achieve pattern diversity, this Philosophiae Doctor (Ph.D.) arises from the pursuit of obtaining pattern diversity and/or spatial multiplexing capabilities through the multimode microstrip behaviour, thus proposing a novel quasi analytical model for the analysis and design of reconfigurable multimode multiport microstrip antennas. This innovative approach on this field, instead of resorting to full-wave simulations through commercial tools as done in the available publications, significantly reduces the overall analysis and design effort, in this last case through comprehensive design guidelines. In order to achieve this goal and after a review of the main concepts of MIMO systems which will be followed used, the spotlight is fixed on finding, implementing and verifying the correctness and accuracy of a base quasi analytical model over which add the necessary enhancements to obtain the sought features of the quasi analytical model proposed. Afterwards and starting from the base quasi analytical model selected, the pattern diversity and spatial multiplexing performance capabilities provided by the multimode behaviour of unloaded microstrip patch antennas under different multipath environments are fully explored. As each cavity mode has its own resonant frequency, it is required to find ways to displace the resonant frequency of each used mode to place them at the same frequency band while keeping each mode as independent as possible. This objective can be accomplished with an appropriate loading of the cavity with reactive loads, or through the alteration of the geometry of the radiation patch. Thus, the focus is set at this point on the design, implementation and verification of a quasi analytical model for the analysis of loaded multimode multiport microstrip patch antennas to carry out the aforementioned task, which is one of the main contributions of this Ph.D. Finally and based on the knowledge acquired through the quasi analytical model, comprehensive guidelines to design reconfigurable multimode MIMO microstrip antennas to improve the spatial multiplexing and/or diversity system performance by means of the multimode microstrip patch antenna behaviour are given and applied. It shall be highlighted that the work presented in this Ph.D. has given rise to a publication in an international technical journal of high impact factor. Moreover, the work has also been presented at some of the most important international conferences in antenna area.