A model of amacrine and ganglion cells for optical information processing

Based on a previously reported logic cell structure (see SPIE, vol. 2038, p. 67-77, 1993), the two types of cells present at the inner and ganglion cell layers of the vertebrate retina and their intracellular response, as well as their connections with each other, have been simulated. These cells are amacrines and ganglion cells. The main scheme of the authors' configuration is shown in a figure. These two types of cells, as well as some of their possible interconnections, have been implemented with the authors' previously reported optical-processing element. As it has been shown, the authors' logic structure is able to process two optical input binary signals, being the output two logical functions. Moreover, if a delayed feedback from one of the two possible outputs to one or both of the inputs is introduced, a very different behaviour is obtained. Depending on the value of the time delay, an oscillatory output can be obtained from a constant optical input signal. Period and length pulses are dependent on delay values, both external and internal, as well as on other control signals. Moreover, a chaotic behaviour can be obtained too under certain conditions

Some aspects of amacrine neuron simulation for motion detection

As it is known, there are five types of neurons in the mammalian retinal layer allowing the detection of several important characteristics of the visual image impinging onto the visual system, namely, photoreceptors, horizontal cells, amacrine, bipolar and ganglion cells. And it is a well known fact too, that the amacrine neuron architecture allows a first detection for objects motion, being the most important retinal cell to this function. We have already studied and simulated the Dowling retina model and we have verified that many complex processes in visual detection is performed with the basis of the amacrine cell synaptic connections. This work will show how this structure may be employed for motion detection

Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration

Monolithical series connection of silicon thin-film solar cells modules performed by laser scribing plays a very important role in the entire production of these devices. In the current laser process interconnection the two last steps are developed for a configuration of modules where the glass is essential as transparent substrate. In addition, the change of wavelength in the employed laser sources is sometimes enforced due to the nature of the different materials of the multilayer structure which make up the device. The aim of this work is to characterize the laser patterning involved in the monolithic interconnection process in a different configurations of processing than the usually performed with visible laser sources. To carry out this study, we use nanosecond and picosecond laser sources working at 355nm of wavelength in order to achieve the selective ablation of the material from the film side. To assess this selective removal of material has been used EDX (energy dispersive using X-ray) analysis

Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells

III-nitride nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitride nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow with high order on pre-defined sites on a pre-patterned substrate

E-beam nanopatterning for the selective area growth of III-V nitride nanorods

GaN/InGaN nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitrides nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow on pre-defined sites on a pre-patterned substrate [5].

Optically enhanced photon recycling in mechanically stacked multijunction solar cells

Multijunction solar cells can be fabricated by mechanically bonding together component cells that are grown separately. Here, we present four-junction four-terminal mechanical stacks composed of GaInP/GaAs tandems grown on GaAs substrates and GaInAsP/GaInAs tandems grown on InP substrates. The component cells were bonded together with a low-index transparent epoxy that acts as an angularly selective reflector to the GaAs bandedge luminescence, while simultaneously transmitting nearly all of the subbandgap light. As determined by electroluminescence measurements and optical modeling, the GaAs subcell demonstrates a higher internal radiative limit and, thus, higher subcell voltage, compared with GaAs subcells without the epoxy reflector. The best cells demonstrate 38.8 ± 1.0% efficiency under the global spectrum at 1000 W/m2 and ~ 42% under the direct spectrum at ~100 suns. Eliminating the series resistance is the key challenge for further improving the concentrator cells.