Generating segmental foreign accent

For most of us, speaking in a non-native language involves deviating to some extent from native pronunciation norms. However, the detailed basis for foreign accent (FA) remains elusive, in part due to methodological challenges in isolating segmental from suprasegmental factors. The current study examines the role of segmental features in conveying FA through the use of a generative approach in which accent is localised to single consonantal segments. Three techniques are evaluated: the first requires a highly-proficiency bilingual to produce words with isolated accented segments; the second uses cross-splicing of context-dependent consonants from the non-native language into native words; the third employs hidden Markov model synthesis to blend voice models for both languages. Using English and Spanish as the native/non-native languages respectively, listener cohorts from both languages identified words and rated their degree of FA. All techniques were capable of generating accented words, but to differing degrees. Naturally-produced speech led to the strongest FA ratings and synthetic speech the weakest, which we interpret as the outcome of over-smoothing. Nevertheless, the flexibility offered by synthesising localised accent encourages further development of the method.

The segmental approximation in multijunction solar cells

The segmental approach has been considered to analyze dark and light I-V curves. The photovoltaic (PV) dependence of the open-circuit voltage (Voc), the maximum power point voltage (Vm), the efficiency (?) on the photogenerated current (Jg), or on the sunlight concentration ratio (X), are analyzed, as well as other photovoltaic characteristics of multijunction solar cells. The characteristics being analyzed are split into monoexponential (linear in the semilogarithmic scale) portions, each of which is characterized by a definite value of the ideality factor A and preexponential current J0. The monoexponentiality ensures advantages, since at many steps of the analysis, one can use the analytical dependences instead of numerical methods. In this work, an experimental procedure for obtaining the necessary parameters has been proposed, and an analysis of GaInP/GaInAs/Ge triple-junction solar cell characteristics has been carried out. It has been shown that up to the sunlight concentration ratios, at which the efficiency maximum is achieved, the results of calculation of dark and light I-V curves by the segmental method fit well with the experimental data. An important consequence of this work is the feasibility of acquiring the resistanceless dark and light I-V curves, which can be used for obtaining the I-V curves characterizing the losses in the transport part of a solar cell.