Ion beam analysis of as-received, H-implanted and post implanted annealed fusion steels

The elemental distribution for as-received (AR), H implanted (AI) and post-implanted annealed (A) Eurofer and ODS-Eurofer steels has been characterized by means of micro Particle Induced X-ray Emission (μ-PIXE), micro Elastic Recoil Detection (μ-ERD) and Secondary Ion Mass Spectrometry (SIMS). The temperature and time-induced H diffusion has been analyzed by Resonance Nuclear Reaction Analysis (RNRA), Thermal Desorption Spectroscopy (TDS), ERDA and SIMS techniques. μ-PIXE measurements point out the presence of inhomogeneities in the Y distribution for ODS-Eurofer samples. RNRA and SIMS experiments evidence that hydrogen easily outdiffuses in these steels even at room temperature. ERD data show that annealing at temperatures as low as 300 °C strongly accelerates the hydrogen diffusion process, driving out up to the 90% of the initial hydrogen.

Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies have predicted that Ti should occupy interstitial sites in silicon for a metallic-intermediate band (IB) formation. The analysis of Ti lattice location after PLM processes is a crucial point to evaluate the IB formation that can be clarifyied by means of RBS measurements. After PLM, time-of-flight secondary ion mass spectrometry measurements show that the Ti concentration in the layers is well above the theoretical limit for IB formation. RBS measurements have shown a significant improvement of the lattice quality at the highest PLM energy density studied. The RBS channeling spectra reveals clearly that after PLM processes Ti impurities are mostly occupying interstitial lattice sites.

Study of the Electrical Behavior in Intermediate Band-Si Junctions

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1menor queA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.

Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements show that Ti supersaturated Si presents spectral response orders of magnitude higher than unimplanted Si at energies below the band gap. We conclude that the observed below band gap photoconductivity cannot be attributed to structural defects produced by the fabrication processes and suggest that both absorption coefficient of the new material and lifetime of photoexcited carriers have been enhanced due to the presence of a high Ti concentration. This remarkable result proves that Ti supersaturated Si is a promising material for both infrared detectors and high efficiency photovoltaic devices.

Comparison of metaheuristic strategies for peakbin selection in proteomic mass spectrometry data

Mass spectrometry (MS) data provide a promising strategy for biomarker discovery. For this purpose, the detection of relevant peakbins in MS data is currently under intense research. Data from mass spectrometry are challenging to analyze because of their high dimensionality and the generally low number of samples available. To tackle this problem, the scientific community is becoming increasingly interested in applying feature subset selection techniques based on specialized machine learning algorithms. In this paper, we present a performance comparison of some metaheuristics: best first (BF), genetic algorithm (GA), scatter search (SS) and variable neighborhood search (VNS). Up to now, all the algorithms, except for GA, have been first applied to detect relevant peakbins in MS data. All these metaheuristic searches are embedded in two different filter and wrapper schemes coupled with Naive Bayes and SVM classifiers.

Double ion implantation and pulsed laser melting processes for third generation solar cells

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.

Plasma dynamics studies by mass spectrometry techniques

We present temporal information obtained by mass spectrometry techniques about the evolution of plasmas generated by laser filamentation in air. The experimental setup used in this work allowed us to study not only the dynamics of the filament core but also of the energy reservoir that surrounds it. Furthermore, valuable insights about the chemistry of such systems like the photofragmentation and/or formation of molecules were obtained. The interpretation of the experimental results are supported by PIC simulations.

Multiresidue Analysis of Insecticides and Other Selected Environmental Contaminants in Poultry Manure by Gas Chromatography/Mass Spectrometry

An analytical method was developed for the simultaneous determination in poultry manure of 41 organic contaminants belonging to different chemical classes: pesticides, polycyclic aromatic hydrocarbons, polychlorinated biphenyls, and polybrominated diphenyl ethers. Poultry manure was extracted with a modified QuEChERS method, and the extracts were analyzed by isotope dilution GC/MS. Recovery of these contaminants from samples spiked at levels ranging from 25 to 100 ng/g was satisfactory for all the compounds. The developed procedure provided LODs from 0.8 to 9.6 ng/g. The analysis of poultry manure samples collected on different farms confirmed the presence of some of the studied contaminants. Pyrethroids and polycyclic aromatic hydrocarbons were the main contaminants detected.