3 resultados para Right half plane zero
em Universidad Politécnica de Madrid
Resumo:
Several boost-derived topologies are analyzed and compared for an aerospace application that uses a 100 V voltage bus. All these topologies have been designed and optimized considering the electrical requirements and the reduced number of space-qualified components. The comparison evaluates the power losses, mass, and dynamic response. Special attention has been paid to those topologies that may cancel the inherent right half plane zero (RHP) zero of the boost topology. Experimental results of the less common topologies are presented.
Resumo:
The one-dimensional self-similar motion of an initially cold, half-space plasma of electron density n,produced by the (anomalous) absorption of a laser pulse of irradiation
plane lies far in the expansion tail. The results break down when the density is so small that the plasma becomes collisionless. The analysis is also invalid for a too small. Using results previously found for a>€~4'3, a qualitative discussion of how plasma behavior changes with a, is given.
Resumo:
The half antivortex, a fundamental topological structure which determines magnetization reversal of submicron magnetic devices with domain walls, has been suggested also to play a crucial role in spin torque induced vortex core reversal in circular disks. Here, we report on magnetization reversal in circular disks with nanoholes through consecutive metastable states with half antivortices. In-plane anisotropic magnetoresistance and broadband susceptibility measurements accompanied by micromagnetic simulations reveal that cobalt (Co) disks with two and three linearly arranged nanoholes directed at 45° and 135° with respect to the external magnetic field show reproducible step-like changes in the anisotropic magnetoresistance and magnetic permeability due to transitions between different intermediate states mediated by vortices and half antivortices confined to the dot nanoholes and edges, respectively. Our findings are relevant for the development of multi-hole based spintronic and magnetic memory devices.