Gini coefficient, dissimilarity index and Lorenz curve for the spanish port system by type of goods

This paper shows the Gini Coefficient, the dissimilarity Index and the Lorenz Curve for the Spanish Port System by type of goods from 1960 to the year 2010 for business units: Total traffic, Liquid bulk cargo, Solid bulk cargo, General Merchandise and Container (TEUs) with the aim of carcaterizar the Spanish port systems in these periods and propose future strategies.

Canonical Correlation Analysis for Interpreting Airborne Laser Scanning Metrics along the Lorenz Curve of Tree Size Inequality

Canonical Correlation Analysis for Interpreting Airborne Laser Scanning Metrics along the Lorenz Curve of Tree Size Inequality

Comparison of Airborne Laser Scanning Methods for Estimating Forest Structure Indicators Based on Lorenz Curves

The purpose of this study was to compare a number of state-of-the-art methods in airborne laser scan- ning (ALS) remote sensing with regards to their capacity to describe tree size inequality and other indi- cators related to forest structure. The indicators chosen were based on the analysis of the Lorenz curve: Gini coefficient ( GC ), Lorenz asymmetry ( LA ), the proportions of basal area ( BALM ) and stem density ( NSLM ) stocked above the mean quadratic diameter. Each method belonged to one of these estimation strategies: (A) estimating indicators directly; (B) estimating the whole Lorenz curve; or (C) estimating a complete tree list. Across these strategies, the most popular statistical methods for area-based approach (ABA) were used: regression, random forest (RF), and nearest neighbour imputation. The latter included distance metrics based on either RF (NN–RF) or most similar neighbour (MSN). In the case of tree list esti- mation, methods based on individual tree detection (ITD) and semi-ITD, both combined with MSN impu- tation, were also studied. The most accurate method was direct estimation by best subset regression, which obtained the lowest cross-validated coefficients of variation of their root mean squared error CV(RMSE) for most indicators: GC (16.80%), LA (8.76%), BALM (8.80%) and NSLM (14.60%). Similar figures [CV(RMSE) 16.09%, 10.49%, 10.93% and 14.07%, respectively] were obtained by MSN imputation of tree lists by ABA, a method that also showed a number of additional advantages, such as better distributing the residual variance along the predictive range. In light of our results, ITD approaches may be clearly inferior to ABA with regards to describing the structural properties related to tree size inequality in for- ested areas.

Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability

AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

The NACIR Project: New Applications for CPV'S: A fast way to improve reliability and Technology progress

The main goal of this proposal is to join together the owners of the most advanced CPV technology, with respect to the state of the art, in order to research from its leading position new applications for CPV systems. In addition to opening up new markets, it will unveil possible sources of failure in new environments outside Europe, in order to assure component reliability. The proposed project will also try to improve the current technology of the industrial partners (ISOFOTON and CONCENTRIX) by accelerating the learning curve that CPV must follow in order to reach the competitive market, and lowering the cost under the current flat panel PV significantly within 3-4 years. The use of CPV systems in remote areas, together with harsher radiation, ambient and infrastructure conditions will help to increase the rate of progress of this technology. In addition, the ISFOC s contribution, which brings together seven power plants from seven CPV technologies up to 3 MWpeak, will allow creating the most complete database of components and systems performance to be generated as well as the effects of radiation and meteorology on systems operations. Finally, regarding the new applications for CPV subject, the project will use a CPV system sized 25 kWp in a stand-alone station in Egypt (NWRC) for the first time for water pumping and irrigation purposes. In a similar way ISOFOTON will connect up to 25 kWp CPV to the Moroccan ONE utility grid. From the research content point of view of this project, which is directly addressed by the scope of the call, the cooperative research between UPM, FhG-ISE and the two companies will be favoured by the fact that all are progressing in similar directions: developing two-stage optics CPV systems. In addition to these technology improvements the UPM is very interested in developing a new concept of module, recently patented, which will fulfil all required characteristics of a good CPV with less components and reducing cost.

Level 2 reliability of simplified pushover methods

Pushover methods are being used as an everyday tool in engineering practice and some of them have been included in Regulatory Codes. Recently several efforts have been done trying to look at them from a probabilistic viewpoint. In this paper the authors shall present a Level 2 approach based on a probabilistic definition of the characteristic points defining the response spectra as well as a probabilistic definition of the elasto-plastic pushover curve representing the structural behavior. Comparisons with Montecarlo simulations will help to precise the accuracy of the proposed approach.