Electromagnetic interaction between a laser beam and semiconductor nanowires deposited on different substrates: Raman enhancement in Si Nanowires

Raman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtainedRaman scattering of Si nanowires (NWs) presents antenna effects. The electromagnetic resonance depends on the electromagnetic coupling of the system laser/NW/substrate. The antenna effect of the Raman signal was measured in individual NWs deposited on different substrates, and also free standing NWs in air. The one phonon Raman band in NWs can reach high intensities depending on the system configuration; values of Raman intensity per unit volume more than a few hundred times with respect to bulk substrate can be obtained

Estudio de limitaciones en sistemas WDM

Los avances tecnológicos de los últimos años han modificado el panorama de las comunicaciones ópticas. Los amplificadores EDFA (Erbium-Doped Fiber Amplifier) han alterado dos aspectos fundamentales de los sistemas WDM (Wavelength Division Multiplexing): el aumento considerable de las distancias de regeneración y además, la tecnología WDM es un medio más económico de incrementar la capacidad de los sistemas que la tecnología TDM (Time Division Multiplexing). Sin embargo, la implementación de sistemas WDM con grandes tramos sin regeneración de señal óptica trae consigo la aparición de nuevos problemas, entre los que se encuentran las no-linealidades en fibra óptica. Estas no-linealidades en fibras de sílice se pueden clasificar en dos categorías: dispersión estimulada (de Raman y de Brillouin) y efectos debidos al índice no lineal de refracción (automodulación y modulación cruzada de fase y mezcla de cuatro ondas). Este Proyecto Fin de Carrera pretende ser un estudio teórico que refleje el actual Estado del Arte de los principales efectos no-lineales que se producen en los sistemas WDM: dispersión estimulada de Raman (SRS, Stimulated Raman Scattering), dispersión estimulada de Brillouin (SBS,Stimulated Brilfouin Scattering), automodulación de fase (SPM, Self-Phase Modulation), modulación cruzada de fase (XPM, Cross-Phase Modulation) y mezcla de cuatro ondas (FWM, Four-Wave Mixing).

Analysis by finite element calculations of light scattering in laser-textured AZO films for PV thin-film solar cells

In the thin-film photovoltaic industry, to achieve a high light scattering in one or more of the cell interfaces is one of the strategies that allow an enhancement of light absorption inside the cell and, therefore, a better device behavior and efficiency. Although chemical etching is the standard method to texture surfaces for that scattering improvement, laser light has shown as a new way for texturizing different materials, maintaining a good control of the final topography with a unique, clean, and quite precise process. In this work AZO films with different texture parameters are fabricated. The typical parameters used to characterize them, as the root mean square roughness or the haze factor, are discussed and, for deeper understanding of the scattering mechanisms, the light behavior in the films is simulated using a finite element method code. This method gives information about the light intensity in each point of the system, allowing the precise characterization of the scattering behavior near the film surface, and it can be used as well to calculate a simulated haze factor that can be compared with experimental measurements. A discussion of the validation of the numerical code, based in a comprehensive comparison with experimental data is included.