4 resultados para REACTIVE MAGNETRON SPUTTERING

em Universidad Politécnica de Madrid


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We investigate the sputter growth of very thin aluminum nitride (AlN) films on iridium electrodes for electroacoustic devices operating in the super high frequency range. Superior crystal quality and low stress films with thicknesses as low as 160 nm are achieved after a radio frequency plasma treatment of the iridium electrode followed by a two-step alternating current reactive magnetron sputtering of an aluminum target, which promotes better conditions for the nucleation of well textured AlN films in the very first stages of growth. Solidly mounted resonators tuned around 8 GHz with effective electromechanical coupling factors of 5.8% and quality factors Q up to 900 are achieved.

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In this work we present the assessment of the structural and piezoelectric properties of Al(0.5-x)TixN0.5 compounds (titanium content menor que6% atomic), which are expected to possess improved properties than conventional AlN films, such as larger piezoelectric activity, thermal stability of frequency and temperature resistance. Al:Ti:N films were deposited from a twin concentric target of Al and Ti by reactive AC sputtering, which provided films with a radial gradient of the Ti concentration. The properties of the films were investigated as a function of their composition, which was measured by electron dispersive energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. The microstructure and morphology of the films were assessed by X-ray diffraction and infrared reflectance. Their electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. Al:Ti:N films properties appear to be strongly dependent on the Ti content, which modifies the AlN wurtzite crystal structure leading to greater dielectric constant, lower sound velocities, lower electromechanical factor and moderately improved temperature coefficient of the resonant frequency.

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El trabajo que se llevará a cabo se basa en el desarrollo de nuevos materiales que sean capaces de resistir las condiciones extremas a las que estarían expuestos en el interior de un reactor de fusión nuclear, como son los altos choques térmicos y los altos flujos iónicos. Actualmente se está investigando en el potencial del wolframio nanoestructurado como material de primera pared (en inglés PFM: Plasma Facing Material). La principal ventaja de éste frente al wolframio masivo radica en su gran densidad de fronteras de grano que hacen que el material sea más resistente a la irradiación. El objetivo de este trabajo será la búsqueda de las condiciones óptimas para la fabricación de recubrimientos de wolframio nanoestructurado mediante la técnica de pulverización catódica ("sputtering") en diferentes configuraciones, continuo ("Direct Current Magnetron Sputtering" o DCMS) y/o pulsado ("High Power Impulse Magnetron Sputtering" o HiPIMS) y caracterizar sus propiedades como PFM mediante perfilometría, microscopía óptica, microscopía electrónica de barrido ("Scanning Electron Microscope" o SEM) y difracción de rayos X ("X-Ray Diffraction" o XRD). A su vez, se realizará un ensayo de implantación con un plasma pulsado de He para analizar los efectos de la irradiación en uno de los recubrimientos. Abstract: The work that will be carried out is based on the development of new materials capable of withstanding the extreme conditions that they will have to face inside a nuclear fusion reactor, such as high thermal loads and high ion fluxes. Currently, nanostructured tungsten potential is being investigated as a plasma facing material (PFM). The main advantage over coarse grain tungsten is its high density of grain boundaries which make the material more resistant to irradiation. The project´s main objective will be the search of the optimal conditions that will allow us to fabricate nanostructured tungsten thin films by using the sputtering technique in different configurations, such as DCMS (Direct Current Magnetron Sputtering) and/or HiPIMS (High Power Impulse Magetron Sputtering) and characterize their properties as a PFM by perfilometry, optical microscopy, SEM (Scanning Electron Microcopy) and XRD (X-Ray Diffracion) analysis. Moreover, an implantation test with a He pulsed plasma will be carried out to analyze the effects of irradiation on one of the coatings.

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In this work, we analyze the influence of the processing pressure and the substrate–target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature—an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target–substrate distance as it was varied in between 30 and 70 mm.