Communication-efficient and crash-quiescent Omega with unknown membership

The failure detector class Omega (Ω) provides an eventual leader election functionality, i.e., eventually all correct processes permanently trust the same correct process. An algorithm is communication-efficient if the number of links that carry messages forever is bounded by n, being n the number of processes in the system. It has been defined that an algorithm is crash-quiescent if it eventually stops sending messages to crashed processes. In this regard, it has been recently shown the impossibility of implementing Ω crash quiescently without a majority of correct processes. We say that the membership is unknown if each process pi only knows its own identity and the number of processes in the system (that is, i and n), but pi does not know the identity of the rest of processes of the system. There is a type of link (denoted by ADD link) in which a bounded (but unknown) number of consecutive messages can be delayed or lost. In this work we present the first implementation (to our knowledge) of Ω in partially synchronous systems with ADD links and with unknown membership. Furthermore, it is the first implementation of Ω that combines two very interesting properties: communication-efficiency and crash-quiescence when the majority of processes are correct. Finally, we also obtain with the same algorithm a failure detector () such that every correct process eventually and permanently outputs the set of all correct processes.

B-Neck: A Distributed and Quiescent Max-Min Fair Algorithm

The problem of fairly distributing the capacity of a network among a set of sessions has been widely studied. In this problem, each session connects via a single path a source and a destination, and its goal is to maximize its assigned transmission rate (i.e., its throughput). Since the links of the network have limited bandwidths, some criterion has to be defined to fairly distribute their capacity among the sessions. A popular criterion is max-min fairness that, in short, guarantees that each session i gets a rate λi such that no session s can increase λs without causing another session s' to end up with a rate λs/ <; λs. Many max-min fair algorithms have been proposed, both centralized and distributed. However, to our knowledge, all proposed distributed algorithms require control data being continuously transmitted to recompute the max-min fair rates when needed (because none of them has mechanisms to detect convergence to the max-min fair rates). In this paper we propose B-Neck, a distributed max-min fair algorithm that is also quiescent. This means that, in absence of changes (i.e., session arrivals or departures), once the max min rates have been computed, B-Neck stops generating network traffic. Quiescence is a key design concept of B-Neck, because B-Neck routers are capable of detecting and notifying changes in the convergence conditions of max-min fair rates. As far as we know, B-Neck is the first distributed max-min fair algorithm that does not require a continuous injection of control traffic to compute the rates. The correctness of B-Neck is formally proved, and extensive simulations are conducted. In them, it is shown that B-Neck converges relatively fast and behaves nicely in presence of sessions arriving and departing.

Theory of a probe in a strong magnetic field

An asymptotic analysis of the Langmuir-probe problem in a quiescent, fully ionized plasma in a strong magnetic field is performed, for electron cyclotron radius and Debye length much smaller than probe radius, and this not larger than either ion cyclotron radius or mean free path. It is found that the electric potential, which is not confined to a sheath, controls the diffusion far from the probe; inside the magnetic tube bounded by the probe cross section the potential overshoots to a large value before decaying to its value in the body of the plasma. The electron current is independent of the shape of the body along the field and increases with ion temperature; due to the overshoot in the potential, (1) the current at negative voltages does not vary exponentially, (2) its magnitude is strongly reduced by the field, and (3) the usual sharp knee at space potential, disappears. In the regions of the C-V diagram studied the ion current is negligible or unaffected by the field. Some numerical results are presented.The theory, which fails beyond certain positive voltage, fields useful results for weak fields, too.

Multi-fluid Eulerian model of an electrospray in a host gas.

An Eulerian multifluid model is used to describe the evolution of an electrospray plume and the flow induced in the surrounding gas by the drag of the electrically charged spray droplets in the space between an injection electrode containing the electrospray source and a collector electrode. The spray is driven by the voltage applied between the two electrodes. Numerical computations and order-of-magnitude estimates for a quiescent gas show that the droplets begin to fly back toward the injection electrode at a certain critical value of the flux of droplets in the spray, which depends very much on the electrical conditions at the injection electrode. As the flux is increased toward its critical value, the electric field induced by the charge of the droplets partially balances the field due to the applied voltage in the vicinity of the injection electrode, leading to a spray that rapidly broadens at a distance from its origin of the order of the stopping distance at which the droplets lose their initial momentum and the effect of their inertia becomes negligible. The axial component of the electric field first changes sign in this region, causing the fly back. The flow induced in the gas significantly changes this picture in the conditions of typical experiments. A gas plume is induced by the drag of the droplets whose entrainment makes the radius of the spray away from the injection electrode smaller than in a quiescent gas, and convects the droplets across the region of negative axial electric field that appears around the origin of the spray when the flux of droplets is increased. This suppresses fly back and allows much higher fluxes to be reached than are possible in a quiescent gas. The limit of large droplet-to-gas mass ratio is discussed. Migration of satellite droplets to the shroud of the spray is reproduced by the Eulerian model, but this process is also affected by the motion of the gas. The gas flow preferentially pushes satellite droplets from the shroud to the core of the spray when the effect of the inertia of the droplets becomes negligible, and thus opposes the well-established electrostatic/inertial mechanism of segregation and may end up concentrating satellite droplets in an intermediate radial region of the spray.

Variable-density jet flows induced by concentrated sources of momentum and energy

The planar and axisymmetric variable-density flows induced in a quiescent gas by a concentrated source of momentum that is simultaneously either a source or a sink of energy are investigated for application to the description of the velocity and temperature far fields in laminar gaseous jets with either large or small values of the initial jet-to-ambient temperature ratio. The source fluxes of momentum and heat are used to construct the characteristic scales of velocity and length in the region where the density differences are of the order of the ambient density, which is slender for the large values of the Reynolds number considered herein. The problem reduces to the integration of the dimensionless boundary-layer conservation equations, giving a solution that depends on the gas transport properties but is otherwise free of parameters. The boundary conditions at the jet exit for integration are obtained by analysing the self-similar flow that appears near the heat source in planar and axisymmetric configurations and also near the heat sink in the planar case. Numerical integrations of the boundary-layer equations with these conditions give solutions that describe accurately the velocity and temperature fields of very hot planar and round jets and also of very cold plane jets in the far field region where the density and temperature differences are comparable to the ambient values. Simple scaling arguments indicate that the point source description does not apply, however, to cold round jets, whose far field region is not large compared with the jet development region, as verified by numerical integrations

Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries

PAPER Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries S Martin-Horcajo1, A Wang1, A Bosca1, M F Romero1, M J Tadjer1,2, A D Koehler2, T J Anderson2 and F Calle1 Published 11 February 2015 • © 2015 IOP Publishing Ltd Semiconductor Science and Technology, Volume 30, Number 3 Article PDF Figures References Citations Metrics 350 Total downloads Cited by 1 articles Export citation and abstract BibTeX RIS Turn on MathJax Share this article Article information Abstract Trapping effects were evaluated by means of pulsed measurements under different quiescent biases for GaN/AlGaN/GaN and GaN/InAlN/GaN. It was found that devices with an AlGaN barrier underwent an increase in the on-resistance, and a drain current and transconductance reduction without measurable threshold voltage change, suggesting the location of the traps in the gate-drain access region. In contrast, devices with an InAlN barrier showed a transconductance and a decrease in drain associated with a significant positive shift of threshold voltage, indicating that the traps were likely located under the gate region; as well as an on-resistance degradation probably associated with the presence of surface traps in the gate-drain access region. Furthermore, measurements of drain current transients at different ambient temperatures revealed that the activation energy of electron traps was 0.43 eV and 0.38 eV for AlGaN and InAlN barrier devices, respectively. Experimental and simulation results demonstrated the influence of device geometry on the observed trapping effects, since devices with larger gate lengths and gate-to-drain distance values exhibited less noticeable charge trapping effects.