Propellantless de orbiting of space debris by bare electrodynamic tethers

A 3-year Project started on November 1 2010, financed by the European Commision within the FP-7 Space Program, and aimed at developing an efficient de-orbit system that could be carried on board by future spacecraft launched into LEO, will be presented. The operational system will deploy a thin uninsulated tape-tether to collect electrons as a giant Langmuir probe, using no propellant/no power supply, and generating power on board. This project will involve free-fall tests, and laboratory hypervelocity-impact and tether-current tests, and design/Manufacturing of subsystems: interface elements, electric control and driving module, electron-ejecting plasma contactor, tether-deployment mechanism/end-mass, and tape samples. Preliminary results to be presented involve: i) devising criteria for sizing the three disparate tape dimensions, affecting mass, resistance, current-collection, magnetic self-field, and survivability against debris itself; ii) assessing the dynamical relevance of tether parameters in implementing control laws to limit oscillations in /off the orbital plane, where passive stability may be marginal; iii) deriving a law for bare-tape current from numerical simulations and chamber tests, taking into account ambient magnetic field, ion ram motion, and adiabatic electron trapping; iv) determining requirements on a year-dormant hollow cathode under long times/broad emission-range operation, and trading-off against use of electron thermal emission; v) determining requirements on magnetic components and power semiconductors for a control module that faces high voltage/power operation under mass/volume limitations; vi) assessing strategies to passively deploy a wide conductive tape that needs no retrieval, while avoiding jamming and ending at minimum libration; vii) evaluating the tape structure as regards conductive and dielectric materials, both lengthwise and in its cross-section, in particular to prevent arcing in triple-point junctions.

Impact of N2 plasma power and duration on AlGaN/GaN HEMT

urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.