Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate

Transmission electron microscopy and spatially resolved electron energy-loss spectroscopy have been applied to investigate the indium distribution and the interface morphology in axial (In,Ga)N/GaN nanowire heterostructures. The ordered axial (In,Ga)N/GaN nanowire heterostructures with an indium concentration up to 80% are grown by molecular beam epitaxy on GaN-buffered Si(111) substrates. We observed a pronounced lattice pulling effect in all the nanowire samples given in a broad transition region at the interface. The lattice pulling effect becomes smaller and the (In,Ga)N/GaN interface width is reduced as the indium concentration is increased in the (In,Ga)N section. The result can be interpreted in terms of the increased plastic strain relaxation via the generation of the misfit dislocations at the interface.

Micropillar compression of LiF [111] single crystals: effect of size, ion irradiation and misorientation

The mechanical response under compression of LiF single crystal micropillars oriented in the [111] direction was studied. Micropillars of different diameter (in the range 1–5 lm) were obtained by etching the matrix in directionally-solidified NaCl–LiF and KCl–LiF eutectic compounds. Selected micropillars were exposed to high-energy Ga+ ions to ascertain the effect of ion irradiation on the mechanical response. Ion irradiation led to an increase of approximately 30% in the yield strength and the maximum compressive strength but no effect of the micropillar diameter on flow stress was found in either the as-grown or the ion irradiated pillars. The dominant deformation micromechanisms were analyzed by means of crystal plasticity finite element simulations of the compression test, which explained the strong effect of micropillar misorientation on the mechanical response. Finally, the lack of size effect on the flow stress was discussed to the light of previous studies in LiF and other materials which show high lattice resistance to dislocation motion.

Three dimensional (3D) microstructure-based modeling of interfacial decohesion in particle reinforced metal matrix composites

Modeling and prediction of the overall elastic–plastic response and local damage mechanisms in heterogeneous materials, in particular particle reinforced composites, is a very complex problem. Microstructural complexities such as the inhomogeneous spatial distribution of particles, irregular morphology of the particles, and anisotropy in particle orientation after secondary processing, such as extrusion, significantly affect deformation behavior. We have studied the effect of particle/matrix interface debonding in SiC particle reinforced Al alloy matrix composites with (a) actual microstructure consisting of angular SiC particles and (b) idealized ellipsoidal SiC particles. Tensile deformation in SiC particle reinforced Al matrix composites was modeled using actual microstructures reconstructed from serial sectioning approach. Interfacial debonding was modeled using user-defined cohesive zone elements. Modeling with the actual microstructure (versus idealized ellipsoids) has a significant influence on: (a) localized stresses and strains in particle and matrix, and (b) far-field strain at which localized debonding takes place. The angular particles exhibited higher degree of load transfer and are more sensitive to interfacial debonding. Larger decreases in stress are observed in the angular particles, because of the flat surfaces, normal to the loading axis, which bear load. Furthermore, simplification of particle morphology may lead to erroneous results.

On the charged particle drag acting on LAGEOS

A recent study by the authors points to Charged Particle Drag (CPD) as a contributor to revisit in the LAGEOS non-gravitational perturbations problem. Such perturbations must account for dynamical contributions in the order of pms−2 . The simulated effect takes into account: (i) spatial and temporal variations of the plasmatic parameters (temperature and concentration of the species), (ii) spacecraft potential variations caused by both the eclipse passages and variations in the parameters mentioned above, and (iii) solar and geomagnetic conditions. Furthermore, recent theoretical improvements concerning scattering drag overcome previous limitations allowing for a complete formulation of this effect. For each satellite the lifetime CPD instantaneous acceleration is computed. The plasmatic parameters have been obtained fromthe Sheffield Coupled Thermosphere-Ionosphere-Plasmasphere (SCTIP) semi-empirical model (up to the polar region), as well as alytical/empirical approximations based on spacecraft measurements for the auroral and polar regions. Results show that maximum amplitudes for LAGEOSI are larger than those for LAGEOS-II: −85 pms−2 and −70 pms−2 respectively. This is due to the almost (magnetically) polar orbit configuration of the first, producing larger combinations of plasmatic parameter values. High solar activity has a huge impact in the resulting LAGEOS accelerations: it yields a perfect modulation of the resulting acceleration with maximum amplitudes up to a factor of 10 when comparing low and high activity periods. On the other hand, the impact of the geomagnetic activity results into a reduction of the effect itself, probably due to a decrease in the hydrogen concentration for high energy input periods. The acceleration results will be used in a refined orbit computation in a subsequent investigation.

Comparative theoretical analysis between parallel and perpendicular geometries for 2D particle patterning in photovoltaic ferroelectric substrates

This paper describes the dielectrophoretic potential created by the evanescent electric field acting on a particle near a photovoltaic crystal surface depending on the crystal cut. This electric field is obtained from the steady state solution of the Kukhtarev equations for the photovoltaic effect, where the diffusion term has been disregarded. First, the space charge field generated by a small, square, light spot where d _ l (being d a side of the square and l the crystal thickness) is studied. The surface charge density generated in both geometries is calculated and compared as their relation determines the different properties of the dielectrophoretic potential for both cuts. The shape of the dielectrophoretic potential is obtained and compared for several distances to the sample. Afterwards other light patterns are studied by the superposition of square spots, and the resulting trapping profiles are analysed. Finally the surface charge densities and trapping profiles for different d/l relations are studied.