Homography-based ground plane detection using a single on-board camera

This study presents a robust method for ground plane detection in vision-based systems with a non-stationary camera. The proposed method is based on the reliable estimation of the homography between ground planes in successive images. This homography is computed using a feature matching approach, which in contrast to classical approaches to on-board motion estimation does not require explicit ego-motion calculation. As opposed to it, a novel homography calculation method based on a linear estimation framework is presented. This framework provides predictions of the ground plane transformation matrix that are dynamically updated with new measurements. The method is specially suited for challenging environments, in particular traffic scenarios, in which the information is scarce and the homography computed from the images is usually inaccurate or erroneous. The proposed estimation framework is able to remove erroneous measurements and to correct those that are inaccurate, hence producing a reliable homography estimate at each instant. It is based on the evaluation of the difference between the predicted and the observed transformations, measured according to the spectral norm of the associated matrix of differences. Moreover, an example is provided on how to use the information extracted from ground plane estimation to achieve object detection and tracking. The method has been successfully demonstrated for the detection of moving vehicles in traffic environments.

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the first time on a-plane GaN templates. Ti masks with 150 nm diameter nanoholes were fabricated by colloidal lithography, an easy, fast and cheap process capable to handle large areas. Even though colloidal lithography does not provide a perfect geometrical arrangement like e-beam lithography, it produces a very homogeneous mask in terms of nanohole diameter and density, and is used here for the first time for the selective area growth of GaN. Selective area growth of a-plane GaN nanocolumns is compared, in terms of anisotropic lateral and vertical growth rates, with GaN nanocolumns grown selectively on the c-plane

Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents

High quality 1 μm thick a-plane MgxZn1−xO layers were produced by molecular beam epitaxy with Mg contents higher than 50%. Resonant Rutherford backscattering spectrometry combined with ion channeling revealed a uniform growth in both composition and atomic order. The lattice-site location of Mg, Zn and O elements was determined independently, proving the substitutional behaviour of Mg in Zn-sites of the wurtzite lattice. X-Ray diffraction pole figure analysis also confirms the absence of phase separation. Optical properties at such high Mg contents were studied in Schottky photodiodes.

Failure locus of polypropylene nonwoven fabrics under in-plane biaxial deformation

The failure locus, the characteristics of the stress–strain curve and the damage localization patterns were analyzed in a polypropylene nonwoven fabric under in-plane biaxial deformation. The analysis was carried out by means of a homogenization model developed within the context of the finite element method. It provides the constitutive response for a mesodomain of the fabric corresponding to the area associated to a finite element and takes into account the main deformation and damage mechanisms experimentally observed. It was found that the failure locus in the stress space was accurately predicted by the Von Mises criterion and failure took place by the localization of damage into a crack perpendicular to the main loading axis.

A constitutive model for the in-plane mechanical behavior of nonwoven fabrics

A constitutive model is presented for the in-plane mechanical behavior of nonwoven fabrics. The model is developed within the context of the finite element method and provides the constitutive response for a mesodomain of the fabric corresponding to the area associated to a finite element. The model is built upon the ensemble of three blocks, namely fabric, fibers and damage. The continuum tensorial formulation of the fabric response rigorously takes into account the effect of fiber rotation for large strains and includes the nonlinear fiber behavior. In addition, the various damage mechanisms experimentally observed (bond and fiber fracture, interfiber friction and fiber pull-out) are included in a phenomenological way and the random nature of these materials is also taken into account by means of a Monte Carlo lottery to determine the damage thresholds. The model results are validated with recent experimental results on the tensile response of smooth and notched specimens of a polypropylene nonwoven fabric.

Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy

Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples.

A canonical UTD solution for electromagnetic scattering by an electrically large impedance circular cylinder illuminated by an obliquely incident plane wave

A uniform geometrical theory of diffraction (UTD) solution is developed for the canonical problem of the electromagnetic (EM) scattering by an electrically large circular cylinder with a uniform impedance boundary condition (IBC), when it is illuminated by an obliquely incident high frequency plane wave. A solution to this canonical problem is first constructed in terms of an exact formulation involving a radially propagating eigenfunction expansion. The latter is converted into a circumferentially propagating eigenfunction expansion suited for large cylinders, via the Watson transform, which is expressed as an integral that is subsequently evaluated asymptotically, for high frequencies, in a uniform manner. The resulting solution is then expressed in the desired UTD ray form. This solution is uniform in the sense that it has the important property that it remains continuous across the transition region on either side of the surface shadow boundary. Outside the shadow boundary transition region it recovers the purely ray optical incident and reflected ray fields on the deep lit side of the shadow boundary and to the modal surface diffracted ray fields on the deep shadow side. The scattered field is seen to have a cross-polarized component due to the coupling between the TEz and TMz waves (where z is the cylinder axis) resulting from the IBC. Such cross-polarization vanishes for normal incidence on the cylinder, and also in the deep lit region for oblique incidence where it properly reduces to the geometrical optics (GO) or ray optical solution. This UTD solution is shown to be very accurate by a numerical comparison with an exact reference solution.

A new UTD for the electromagnetic plane wave scattering by a canonical circular cylinder with an impedance boundary condition

A UTD solution is developed for describing the scattering by a circular cylinder with an impedance boundary condition (IBC), when it is illuminated by an obliquely incident electromagnetic (EM) plane wave. The solution to this canonical problem will be crucial for the construction of a more general UTD solution valid for an arbitrary smooth convex surface with an IBC, when it is illuminated by an arbitrary EM ray optical field. The canonical solution is uniformly valid across the surface shadow boundary that is tangent to the surface at grazing incidence. This canonical solution contains cross polarized terms in the scattered fields, which arise from a coupling of the TEz and TMz waves at the impedance boundary on the cylinder. Here, z is the cylinder axis. Numerical results show very good accuracy for the simpler and efficient UTD solution, when compared to exact but very slowly convergent eigenfunction solution.

Plano Horizontal Plano. Del plano horizontal como límite entre lo estereotómico y lo tectónico = Flat Horizontal Plane. On Horizon

Plano Horizontal Plano. Del plano horizontal como límite entre lo estereotómico y lo tectónico

Flat Horizontal Plane - On Horizon

The Flat Horizontal Plane, the platform, is more than just one of the most basic mechanisms of Architecture. In this essay, I would like to move towards understanding this Flat Horizontal Plane not only as the primary mechanism of Architecture, but also, when it is erected, as the spatial limit between the stereotomic and the tectonic.

Light polarization sensitive photodetectors with m- and r-plane homoepitaxial ZnO/ZnMgO quantum wells

Homoepitaxial ZnO/(Zn,Mg)O multiple quantum wells (MQWs) grown with m- and r-plane orientations are used to demonstrate Schottky photodiodes sensitive to the polarization state of light. In both orientations, the spectral photoresponse of the MQW photodiodes shows a sharp excitonic absorption edge at 3.48 eV with a very low Urbach tail, allowing the observation of the absorption from the A, B and C excitonic transitions. The absorption edge energy is shifted by ∼30 and ∼15 meV for the m- and r-plane MQW photodiodes, respectively, in full agreement with the calculated polarization of the A, B, and C excitonic transitions. The best figures of merit are obtained for the m-plane photodiodes, which present a quantum efficiency of ∼11%, and a specific detectivity D* of ∼6.4 × 1010 cm Hz1/2/W. In these photodiodes, the absorption polarization sensitivity contrast between the two orthogonal in-plane axes yields a maximum value of (R⊥/R||)max ∼ 9.9 with a narrow bandwidth of ∼33 meV.