2 resultados para P-I curves
em Universidad Politécnica de Madrid
Resumo:
Information integration is a very important topic. Reusing the knowledge and having common and exchangeable representations have been an active research topic in process systems engineering. In this paper we deal with information integration in two different ways, the first one sharing knowledge between different heterogeneous applications and the second one integrating two different (but complementary) types of knowledge: functional and structural. A new architecture to integrate these representation and use for several purposes is presented in this paper.
Resumo:
An equivalent circuit model is applied in order to describe the operation characteristics of quantum dot intermediate band solar cells (QD-IBSCs), which accounts for the recombination paths of the intermediate band (IB) through conduction band (CB), the valence band (VB) through IB, and the VB-CB transition. In this work, fitting of the measured dark J-V curves for QD-IBSCs (QD region being non-doped or direct Si-doped to n-type) and a reference GaAs p-i-n solar cell (no QDs) were carried out using this model in order to extract the diode parameters. The simulation was then performed using the extracted diode parameters to evaluate solar cell characteristics under concentration. In the case of QDSC with Si-doped (hence partially-filled) QDs, a fast recovery of the open-circuit voltage (Voc) was observed in a range of low concentration due to the IB effect. Further, at around 100X concentration, Si-doped QDSC could outperform the reference GaAs p-i-n solar cell if the current source of IB current source were sixteen times to about 10mA/cm2 compared to our present cell.