Grid Global Behavior Prediction

Complexity has always been one of the most important issues in distributed computing. From the first clusters to grid and now cloud computing, dealing correctly and efficiently with system complexity is the key to taking technology a step further. In this sense, global behavior modeling is an innovative methodology aimed at understanding the grid behavior. The main objective of this methodology is to synthesize the grid's vast, heterogeneous nature into a simple but powerful behavior model, represented in the form of a single, abstract entity, with a global state. Global behavior modeling has proved to be very useful in effectively managing grid complexity but, in many cases, deeper knowledge is needed. It generates a descriptive model that could be greatly improved if extended not only to explain behavior, but also to predict it. In this paper we present a prediction methodology whose objective is to define the techniques needed to create global behavior prediction models for grid systems. This global behavior prediction can benefit grid management, specially in areas such as fault tolerance or job scheduling. The paper presents experimental results obtained in real scenarios in order to validate this approach.

Experimental and numerical study of cw green laser crystallization of a-Si:H thin films

Crystallization and grain growth technique of thin film silicon are among the most promising methods for improving efficiency and lowering cost of solar cells. A major advantage of laser crystallization and annealing over conventional heating methods is its ability to limit rapid heating and cooling to thin surface layers. Laser energy is used to heat the amorphous silicon thin film, melting it and changing the microstructure to polycrystalline silicon (poly-Si) as it cools. Depending on the laser density, the vaporization temperature can be reached at the center of the irradiated area. In these cases ablation effects are expected and the annealing process becomes ineffective. The heating process in the a-Si thin film is governed by the general heat transfer equation. The two dimensional non-linear heat transfer equation with a moving heat source is solve numerically using the finite element method (FEM), particularly COMSOL Multiphysics. The numerical model help to establish the density and the process speed range needed to assure the melting and crystallization without damage or ablation of the silicon surface. The samples of a-Si obtained by physical vapour deposition were irradiated with a cw-green laser source (Millennia Prime from Newport-Spectra) that delivers up to 15 W of average power. The morphology of the irradiated area was characterized by confocal laser scanning microscopy (Leica DCM3D) and Scanning Electron Microscopy (SEM Hitachi 3000N). The structural properties were studied by micro-Raman spectroscopy (Renishaw, inVia Raman microscope).