Near-field light focusing by wavelength-sized dielectric spheroids for photovoltaic applications

We explore the near-field concentration properties of dielectric spheroidal scatterers with sizes close to the wavelength, using an analytical separation-of-variables method. Such particles act as mesoscopic lenses whose physical parameters are optimized here for maximum scattered light enhancement in photovoltaic applications.

Power system stability of a small sized isolated network supplied by a combined wind-pumped storage generation system: a case study in the Canary Islands

Massive integration of renewable energy sources in electrical power systems of remote islands is a subject of current interest. The increasing cost of fossil fuels, transport costs to isolated sites and environmental concerns constitute a serious drawback to the use of conventional fossil fuel plants. In a weak electrical grid, as it is typical on an island, if a large amount of conventional generation is substituted by renewable energy sources, power system safety and stability can be compromised, in the case of large grid disturbances. In this work, a model for transient stability analysis of an isolated electrical grid exclusively fed from a combination of renewable energy sources has been studied. This new generation model will be installed in El Hierro Island, in Spain. Additionally, an operation strategy to coordinate the generation units (wind, hydro) is also established. Attention is given to the assessment of inertial energy and reactive current to guarantee power system stability against large disturbances. The effectiveness of the proposed strategy is shown by means of simulation results.

Towards an abstract domain for resource analysis of logic programs using sized types

We present a novel general resource analysis for logic programs based on sized types.Sized types are representations that incorporate structural (shape) information and allow expressing both lower and upper bounds on the size of a set of terms and their subterms at any position and depth. They also allow relating the sizes of terms and subterms occurring at different argument positions in logic predicates. Using these sized types, the resource analysis can infer both lower and upper bounds on the resources used by all the procedures in a program as functions on input term (and subterm) sizes, overcoming limitations of existing analyses and enhancing their precision. Our new resource analysis has been developed within the abstract interpretation framework, as an extension of the sized types abstract domain, and has been integrated into the Ciao preprocessor, CiaoPP. The abstract domain operations are integrated with the setting up and solving of recurrence equations for both, inferring size and resource usage functions. We show that the analysis is an improvement over the previous resource analysis present in CiaoPP and compares well in power to state of the art systems.

Sized Type Analysis for Logic Programs (Technical Communication)

We present a novel analysis for relating the sizes of terms and subterms occurring at diferent argument positions in logic predicates. We extend and enrich the concept of sized type as a representation that incorporates structural (shape) information and allows expressing both lower and upper bounds on the size of a set of terms and their subterms at any position and depth. For example, expressing bounds on the length of lists of numbers, together with bounds on the values of all of their elements. The analysis is developed using abstract interpretation and the novel abstract operations are based on setting up and solving recurrence relations between sized types. It has been integrated, together with novel resource usage and cardinality analyses, in the abstract interpretation framework in the Ciao preprocessor, CiaoPP, in order to assess both the accuracy of the new size analysis and its usefulness in the resource usage estimation application. We show that the proposed sized types are a substantial improvement over the previous size analyses present in CiaoPP, and also benefit the resource analysis considerably, allowing the inference of equal or better bounds than comparable state of the art systems.

Ratio-based temperature-sensing technique hardened against nanometer process variations

This letter presents a temperature-sensing technique on the basis of the temperature dependency of MOSFET leakage currents. To mitigate the effects of process variation, the ratio of two different leakage current measurements is calculated. Simulations show that this ratio is robust to process spread. The resulting sensor is quite small-0.0016 mm2 including an analog-to-digital conversion-and very energy efficient, consuming less than 640 pJ/conversion. After a two-point calibration, the accuracy in a range of 40°C-110°C is less than 1.5°C , which makes the technique suitable for thermal management applications.

Resource usage analysis of logic programs via abstract interpretation using sized types

We present a novel general resource analysis for logic programs based on sized types. Sized types are representations that incorporate structural (shape) information and allow expressing both lower and upper bounds on the size of a set of terms and their subterms at any position and depth. They also allow relating the sizes of terms and subterms occurring at different argument positions in logic predicates. Using these sized types, the resource analysis can infer both lower and upper bounds on the resources used by all the procedures in a program as functions on input term (and subterm) sizes, overcoming limitations of existing resource analyses and enhancing their precision. Our new resource analysis has been developed within the abstract interpretation framework, as an extension of the sized types abstract domain, and has been integrated into the Ciao preprocessor, CiaoPP. The abstract domain operations are integrated with the setting up and solving of recurrence equations for inferring both size and resource usage functions. We show that the analysis is an improvement over the previous resource analysis present in CiaoPP and compares well in power to state of the art systems.

ITIL in Small to Medium-Sized Enterprises: toward a proposal based on an ITIL processes implementation sequence and a pofile scheme strategy for implementing the first process in the sequence

The backdrop of actual problematic about the implementation of Information Technology (IT) services management in Small and Medium Enterprises (SMEs) will be described. It will be exposed the reasons why reaching a maturity/capability level through well-known standards or the implementation of good software engineering practices by means of IT infrastructure Library are really difficult to achieve by SMEs. Also, the solutions to the exposed problems will be explained. Also master thesis goals are presented in terms of: purpose, research questions, research goals, objectives and scope. Finally, thesis structure is described.

Design and Simulation of Deep Nanometer SRAM Cells under Energy, Mismatch, and Radiation Constraints

La fiabilidad está pasando a ser el principal problema de los circuitos integrados según la tecnología desciende por debajo de los 22nm. Pequeñas imperfecciones en la fabricación de los dispositivos dan lugar ahora a importantes diferencias aleatorias en sus características eléctricas, que han de ser tenidas en cuenta durante la fase de diseño. Los nuevos procesos y materiales requeridos para la fabricación de dispositivos de dimensiones tan reducidas están dando lugar a diferentes efectos que resultan finalmente en un incremento del consumo estático, o una mayor vulnerabilidad frente a radiación. Las memorias SRAM son ya la parte más vulnerable de un sistema electrónico, no solo por representar más de la mitad del área de los SoCs y microprocesadores actuales, sino también porque las variaciones de proceso les afectan de forma crítica, donde el fallo de una única célula afecta a la memoria entera. Esta tesis aborda los diferentes retos que presenta el diseño de memorias SRAM en las tecnologías más pequeñas. En un escenario de aumento de la variabilidad, se consideran problemas como el consumo de energía, el diseño teniendo en cuenta efectos de la tecnología a bajo nivel o el endurecimiento frente a radiación. En primer lugar, dado el aumento de la variabilidad de los dispositivos pertenecientes a los nodos tecnológicos más pequeños, así como a la aparición de nuevas fuentes de variabilidad por la inclusión de nuevos dispositivos y la reducción de sus dimensiones, la precisión del modelado de dicha variabilidad es crucial. Se propone en la tesis extender el método de inyectores, que modela la variabilidad a nivel de circuito, abstrayendo sus causas físicas, añadiendo dos nuevas fuentes para modelar la pendiente sub-umbral y el DIBL, de creciente importancia en la tecnología FinFET. Los dos nuevos inyectores propuestos incrementan la exactitud de figuras de mérito a diferentes niveles de abstracción del diseño electrónico: a nivel de transistor, de puerta y de circuito. El error cuadrático medio al simular métricas de estabilidad y prestaciones de células SRAM se reduce un mínimo de 1,5 veces y hasta un máximo de 7,5 a la vez que la estimación de la probabilidad de fallo se mejora en varios ordenes de magnitud. El diseño para bajo consumo es una de las principales aplicaciones actuales dada la creciente importancia de los dispositivos móviles dependientes de baterías. Es igualmente necesario debido a las importantes densidades de potencia en los sistemas actuales, con el fin de reducir su disipación térmica y sus consecuencias en cuanto al envejecimiento. El método tradicional de reducir la tensión de alimentación para reducir el consumo es problemático en el caso de las memorias SRAM dado el creciente impacto de la variabilidad a bajas tensiones. Se propone el diseño de una célula que usa valores negativos en la bit-line para reducir los fallos de escritura según se reduce la tensión de alimentación principal. A pesar de usar una segunda fuente de alimentación para la tensión negativa en la bit-line, el diseño propuesto consigue reducir el consumo hasta en un 20 % comparado con una célula convencional. Una nueva métrica, el hold trip point se ha propuesto para prevenir nuevos tipos de fallo debidos al uso de tensiones negativas, así como un método alternativo para estimar la velocidad de lectura, reduciendo el número de simulaciones necesarias. Según continúa la reducción del tamaño de los dispositivos electrónicos, se incluyen nuevos mecanismos que permiten facilitar el proceso de fabricación, o alcanzar las prestaciones requeridas para cada nueva generación tecnológica. Se puede citar como ejemplo el estrés compresivo o extensivo aplicado a los fins en tecnologías FinFET, que altera la movilidad de los transistores fabricados a partir de dichos fins. Los efectos de estos mecanismos dependen mucho del layout, la posición de unos transistores afecta a los transistores colindantes y pudiendo ser el efecto diferente en diferentes tipos de transistores. Se propone el uso de una célula SRAM complementaria que utiliza dispositivos pMOS en los transistores de paso, así reduciendo la longitud de los fins de los transistores nMOS y alargando los de los pMOS, extendiéndolos a las células vecinas y hasta los límites de la matriz de células. Considerando los efectos del STI y estresores de SiGe, el diseño propuesto mejora los dos tipos de transistores, mejorando las prestaciones de la célula SRAM complementaria en más de un 10% para una misma probabilidad de fallo y un mismo consumo estático, sin que se requiera aumentar el área. Finalmente, la radiación ha sido un problema recurrente en la electrónica para aplicaciones espaciales, pero la reducción de las corrientes y tensiones de los dispositivos actuales los está volviendo vulnerables al ruido generado por radiación, incluso a nivel de suelo. Pese a que tecnologías como SOI o FinFET reducen la cantidad de energía colectada por el circuito durante el impacto de una partícula, las importantes variaciones de proceso en los nodos más pequeños va a afectar su inmunidad frente a la radiación. Se demuestra que los errores inducidos por radiación pueden aumentar hasta en un 40 % en el nodo de 7nm cuando se consideran las variaciones de proceso, comparado con el caso nominal. Este incremento es de una magnitud mayor que la mejora obtenida mediante el diseño de células de memoria específicamente endurecidas frente a radiación, sugiriendo que la reducción de la variabilidad representaría una mayor mejora. ABSTRACT Reliability is becoming the main concern on integrated circuit as the technology goes beyond 22nm. Small imperfections in the device manufacturing result now in important random differences of the devices at electrical level which must be dealt with during the design. New processes and materials, required to allow the fabrication of the extremely short devices, are making new effects appear resulting ultimately on increased static power consumption, or higher vulnerability to radiation SRAMs have become the most vulnerable part of electronic systems, not only they account for more than half of the chip area of nowadays SoCs and microprocessors, but they are critical as soon as different variation sources are regarded, with failures in a single cell making the whole memory fail. This thesis addresses the different challenges that SRAM design has in the smallest technologies. In a common scenario of increasing variability, issues like energy consumption, design aware of the technology and radiation hardening are considered. First, given the increasing magnitude of device variability in the smallest nodes, as well as new sources of variability appearing as a consequence of new devices and shortened lengths, an accurate modeling of the variability is crucial. We propose to extend the injectors method that models variability at circuit level, abstracting its physical sources, to better model sub-threshold slope and drain induced barrier lowering that are gaining importance in FinFET technology. The two new proposed injectors bring an increased accuracy of figures of merit at different abstraction levels of electronic design, at transistor, gate and circuit levels. The mean square error estimating performance and stability metrics of SRAM cells is reduced by at least 1.5 and up to 7.5 while the yield estimation is improved by orders of magnitude. Low power design is a major constraint given the high-growing market of mobile devices that run on battery. It is also relevant because of the increased power densities of nowadays systems, in order to reduce the thermal dissipation and its impact on aging. The traditional approach of reducing the voltage to lower the energy consumption if challenging in the case of SRAMs given the increased impact of process variations at low voltage supplies. We propose a cell design that makes use of negative bit-line write-assist to overcome write failures as the main supply voltage is lowered. Despite using a second power source for the negative bit-line, the design achieves an energy reduction up to 20% compared to a conventional cell. A new metric, the hold trip point has been introduced to deal with new sources of failures to cells using a negative bit-line voltage, as well as an alternative method to estimate cell speed, requiring less simulations. With the continuous reduction of device sizes, new mechanisms need to be included to ease the fabrication process and to meet the performance targets of the successive nodes. As example we can consider the compressive or tensile strains included in FinFET technology, that alter the mobility of the transistors made out of the concerned fins. The effects of these mechanisms are very dependent on the layout, with transistor being affected by their neighbors, and different types of transistors being affected in a different way. We propose to use complementary SRAM cells with pMOS pass-gates in order to reduce the fin length of nMOS devices and achieve long uncut fins for the pMOS devices when the cell is included in its corresponding array. Once Shallow Trench isolation and SiGe stressors are considered the proposed design improves both kinds of transistor, boosting the performance of complementary SRAM cells by more than 10% for a same failure probability and static power consumption, with no area overhead. While radiation has been a traditional concern in space electronics, the small currents and voltages used in the latest nodes are making them more vulnerable to radiation-induced transient noise, even at ground level. Even if SOI or FinFET technologies reduce the amount of energy transferred from the striking particle to the circuit, the important process variation that the smallest nodes will present will affect their radiation hardening capabilities. We demonstrate that process variations can increase the radiation-induced error rate by up to 40% in the 7nm node compared to the nominal case. This increase is higher than the improvement achieved by radiation-hardened cells suggesting that the reduction of process variations would bring a higher improvement.