Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence

High-resolution monochromated electron energy loss spectroscopy (EELS) at subnanometric spatial resolution and <200 meV energy resolution has been used to assess the valence band properties of a distributed Bragg reflector multilayer heterostructure composed of InAlN lattice matched to GaN. This work thoroughly presents the collection of methods and computational tools put together for this task. Among these are zero-loss-peak subtraction and nonlinear fitting tools, and theoretical modeling of the electron scattering distribution. EELS analysis allows retrieval of a great amount of information: indium concentration in the InAlN layers is monitored through the local plasmon energy position and calculated using a bowing parameter version of Vegard Law. Also a dielectric characterization of the InAlN and GaN layers has been performed through Kramers-Kronig analysis of the Valence-EELS data, allowing band gap energy to be measured and an insight on the polytypism of the GaN layers.

NDT for the detection and characterization of superficial treatments on stone material from archaeological sites of Merida (Spain)

Different treatments (consolidation and water-repellent) were applied on samples of marble and granite from the Front stage of the Roman Theatre of Merida (Spain). The main goal is to study the effects of these treatments on archaeological stone material, by analyzing the surface changes. X-Ray Fluorescence and Laser-Induced Breakdown Spectroscopy techniques, as well as Nuclear Magnetic Resonance have been used in order to study changes in the surface properties of the material, comparing treated and untreated specimens. The results confirm that silicon (Si) marker tracking allows the detection of applied treatments, increasing the peak signal in treated specimens. Furthermore, it is also possible to prove changes both within the pore system of the materialand in the distribution of surface water, resulting from the application of these products