3 resultados para Mere exposure effect

em Universidad Politécnica de Madrid


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Ozone (O3) phytototoxicity has been reported on a wide range of crops and wild Central European plantspecies, however no information has been provided regarding the sensitivity of plantspecies from dehesa Mediterranean therophytic grasslands in spite of their great plantspecies richness and the high O3 levels that are recorded in this area. A study was carried out in open-top chambers (OTCs) to assess the effects of O3 and competition on the reproductiveability of threecloverspecies: Trifolium cherleri, Trifolium subterraneum and Trifolium striatum. A phytometer approach was followed, therefore plants of these species were grown in mesoscosms composed of monocultures of four plants of each species, of threeplants of each species competing against a Briza maxima individual or of a single plant of each cloverspecies competing with threeB. maximaplants. Three O3 treatments were adopted: charcoal filtered air (CFA), non-filtered air (NFA) and non-filtered air supplemented with 40 nl l−1 of O3 (NFA+). The different mesocosms were exposed to the different O3 treatments for 45 days and then they remained in the open. Ozoneexposure caused reductions in the flower biomass of the threecloverspecies assessed. In the case of T. cherleri and T. subterraneum this effect was found following their exposure to the different O3 treatments during their vegetative period. An attenuation of these effects was found when the plants remained in the open. Ozone-induced detrimental effects on the seed output of T. striatum were also observed. The flower biomass of the cloverplants grown in monocultures was greater than when competing with one or threeB. maxima individuals. An increased flower biomass was found in the CFA monoculture mesocosms of T. cherleri when compared with the remaining mesocosms, once the plants were exposed in the open for 60 days. The implications of these effects on the performance of dehesa acid grasslands and for the definition of O3 critical levels is discussed

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The effect of soiling in flat PV modules has been already studied, causing a reduction of the electrical output of 4% on average. For CPV's, as far as soiling produces light scattering at the optical collector surface, the scattered rays should be definitively lost because they cannot be focused onto the receivers again. While the theoretical study becomes difficult because soiling is variable at different sites, it becomes easier to begin the monitoring of the real field performance of concentrators and then raise the following question: how much does the soiling affect to PV concentrators in comparison with flat panels?? The answers allow to predict the PV concentrator electrical performance and to establish a pattern of cleaning frequency. Some experiments have been conducted at the IES-UPM and CSES-ANU sites, consisting in linear reflective concentration systems, a point focus refractive concentrator and a flat module. All the systems have been measured when soiled and then after cleaning, achieving different increases of ISC. In general, results show that CPV systems are more sensitive to soiling than flat panels, accumulating losses in ISC of about 14% on average in three different tests conducted at IESUPM and CSES-ANU test sites in Madrid (Spain) and Canberra (Australia). Some concentrators can reach losses up to 26% when the system is soiled for 4 months of exposure.

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On the basis of optical characterization experiments and an eight band kp model, we have studied the effect of Sb incorporation on the electronic structure of InAs quantum dots (QDs). We have found that Sb incorporation in InAs QDs shifts the hole wave function to the center of the QD from the edges of the QD where it is otherwise pinned down by the effects of shear stress. The observed changes in the ground-state energy cannot merely be explained by a composition change upon Sb exposure but can be accounted for when the change in lateral size is taken into consideration. The Sb distribution inside the QDs produces distinctive changes in the density of states, particularly, in the separation between excitation shells. We find a 50% increase in the thermal escape activation energy compared with reference InAs quantum dots as well as an increment of the fundamental transition decay time with Sb incorporation. Furthermore, we find that Sb incorporation into quantum dots is strongly nonlinear with coverage, saturating at low doses. This suggests the existence of a solubility limit of the Sb incorporation into the quantum dots during growth.