Double ion implantation and pulsed laser melting processes for third generation solar cells

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.

Discovery of a low-mass brown dwarf companion of the young nearby star G196-3.

A substellar-mass object in orbit at about 300 astronomical units from the young low-mass star G 196-3 was detected by direct imaging. Optical and infrared photometry and low- and intermediate-resolution spectroscopy of the faint companion, hereafter referred to as G 196-3B, confirm its cool atmosphere ?15 Jupiter masses. The separation and allow its mass to be estimated at 25?10 between the objects and their mass ratio suggest the fragmentation of a collapsing cloud as the most likely origin for G 196-3B, but alternatively it could have originated from a protoplanetary disc that has been dissipated. Whatever the formation process was, the young age of the primary star (about 100 million years) demonstrates that substellar companions can form on short time scales.