7 resultados para MODIFIED WEIBULL DISTRIBUTION

em Universidad Politécnica de Madrid


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The geometrical factors defining an adhesive joint are of great importance as its design greatly conditions the performance of the bonding. One of the most relevant geometrical factors is the thickness of the adhesive as it decisively influences the mechanical properties of the bonding and has a clear economic impact on the manufacturing processes or long runs. The traditional mechanical joints (riveting, welding, etc.) are characterised by a predictable performance, and are very reliable in service conditions. Thus, structural adhesive joints will only be selected in industrial applications demanding mechanical requirements and adverse environmental conditions if the suitable reliability (the same or higher than the mechanical joints) is guaranteed. For this purpose, the objective of this paper is to analyse the influence of the adhesive thickness on the mechanical behaviour of the joint and, by means of a statistical analysis based on Weibull distribution, propose the optimum thickness for the adhesive combining the best mechanical performance and high reliability. This procedure, which is applicable without a great deal of difficulty to other joints and adhesives, provides a general use for a more reliable use of adhesive bondings and, therefore, for a better and wider use in the industrial manufacturing processes.

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In the photovoltaic field, the back contact solar cells technology has appeared as an alternative to the traditional silicon modules. This new type of cells places both positive and negative contacts on the back side of the cells maximizing the exposed surface to the light and making easier the interconnection of the cells in the module. The Emitter Wrap-Through solar cell structure presents thousands of tiny holes to wrap the emitter from the front surface to the rear surface. These holes are made in a first step over the silicon wafers by means of a laser drilling process. This step is quite harmful from a mechanical point of view since holes act as stress concentrators leading to a reduction in the strength of these wafers. This paper presents the results of the strength characterization of drilled wafers. The study is carried out testing the samples with the ring on ring device. Finite Element models are developed to simulate the tests. The stress concentration factor of the drilled wafers under this load conditions is determined from the FE analysis. Moreover, the material strength is characterized fitting the fracture stress of the samples to a three-parameter Weibull cumulative distribution function. The parameters obtained are compared with the ones obtained in the analysis of a set of samples without holes to validate the method employed for the study of the strength of silicon drilled wafers.

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El estudio de la fiabilidad de componentes y sistemas tiene gran importancia en diversos campos de la ingenieria, y muy concretamente en el de la informatica. Al analizar la duracion de los elementos de la muestra hay que tener en cuenta los elementos que no fallan en el tiempo que dure el experimento, o bien los que fallen por causas distintas a la que es objeto de estudio. Por ello surgen nuevos tipos de muestreo que contemplan estos casos. El mas general de ellos, el muestreo censurado, es el que consideramos en nuestro trabajo. En este muestreo tanto el tiempo hasta que falla el componente como el tiempo de censura son variables aleatorias. Con la hipotesis de que ambos tiempos se distribuyen exponencialmente, el profesor Hurt estudio el comportamiento asintotico del estimador de maxima verosimilitud de la funcion de fiabilidad. En principio parece interesante utilizar metodos Bayesianos en el estudio de la fiabilidad porque incorporan al analisis la informacion a priori de la que se dispone normalmente en problemas reales. Por ello hemos considerado dos estimadores Bayesianos de la fiabilidad de una distribucion exponencial que son la media y la moda de la distribucion a posteriori. Hemos calculado la expansion asint6tica de la media, varianza y error cuadratico medio de ambos estimadores cuando la distribuci6n de censura es exponencial. Hemos obtenido tambien la distribucion asintotica de los estimadores para el caso m3s general de que la distribucion de censura sea de Weibull. Dos tipos de intervalos de confianza para muestras grandes se han propuesto para cada estimador. Los resultados se han comparado con los del estimador de maxima verosimilitud, y con los de dos estimadores no parametricos: limite producto y Bayesiano, resultando un comportamiento superior por parte de uno de nuestros estimadores. Finalmente nemos comprobado mediante simulacion que nuestros estimadores son robustos frente a la supuesta distribuci6n de censura, y que uno de los intervalos de confianza propuestos es valido con muestras pequenas. Este estudio ha servido tambien para confirmar el mejor comportamiento de uno de nuestros estimadores. SETTING OUT AND SUMMARY OF THE THESIS When we study the lifetime of components it's necessary to take into account the elements that don't fail during the experiment, or those that fail by reasons which are desirable to exclude from consideration. The model of random censorship is very usefull for analysing these data. In this model the time to failure and the time censor are random variables. We obtain two Bayes estimators of the reliability function of an exponential distribution based on randomly censored data. We have calculated the asymptotic expansion of the mean, variance and mean square error of both estimators, when the censor's distribution is exponential. We have obtained also the asymptotic distribution of the estimators for the more general case of censor's Weibull distribution. Two large-sample confidence bands have been proposed for each estimator. The results have been compared with those of the maximum likelihood estimator, and with those of two non parametric estimators: Product-limit and Bayesian. One of our estimators has the best behaviour. Finally we have shown by simulation, that our estimators are robust against the assumed censor's distribution, and that one of our intervals does well in small sample situation.

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Quasi-monocrystalline silicon wafers have appeared as a critical innovation in the PV industry, joining the most favourable characteristics of the conventional substrates: the higher solar cell efficiencies of monocrystalline Czochralski-Si (Cz-Si) wafers and the lower cost and the full square-shape of the multicrystalline ones. However, the quasi-mono ingot growth can lead to a different defect structure than the typical Cz-Si process. Thus, the properties of the brand-new quasi-mono wafers, from a mechanical point of view, have been for the first time studied, comparing their strength with that of both Cz-Si mono and typical multicrystalline materials. The study has been carried out employing the four line bending test and simulating them by means of FE models. For the analysis, failure stresses were fitted to a three-parameter Weibull distribution. High mechanical strength was found in all the cases. The low quality quasi-mono wafers, interestingly, did not exhibit critical strength values for the PV industry, despite their noticeable density of extended defects.

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Production of back contact solar cells requires holes generations on the wafers to keep both positive and negative contacts on the back side of the cell. This drilling process weakens the wafer mechanically due to the presence of the holes and the damage introduced during the process as microcracks. In this study, several chemical processes have been applied to drilled wafers in order to eliminate or reduce the damage generated during this fabrication step. The treatments analyzed are the followings: alkaline etching during 1, 3 and 5 minutes, acid etching for 2 and 4 minutes and texturisation. To determine mechanical strength of the samples a common mechanical study has been carried out testing the samples by the Ring on Ring bending test and obtaining the stress state in the moment of failure by FE simulation. Finally the results obtained for each treatment were fitted to a three parameter Weibull distribution

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Este estudio profundiza en la estimación de variables forestales a partir de información LiDAR en el Valle de la Fuenfría (Cercedilla, Madrid). Para ello se dispone de dos vuelos realizados con sensor LiDAR en los años 2002 y 2011 y en el invierno de 2013 se ha realizado un inventario de 60 parcelas de campo. En primer lugar se han estimado seis variables dasométricas (volumen, área basimétrica, biomasa total, altura dominante, densidad y diámetro medio cuadrático) para 2013, tanto a nivel de píxel como a nivel de rodal y monte. Se construyeron modelos de regresión lineal múltiple que permitieron estimar con precisión dichas variables. En segundo lugar, se probaron diferentes métodos para la estimación de la distribución diamétrica. Por un lado, el método de predicción de percentiles y, por otro lado, el método de predicción de parámetros. Este segundo método se probó para una función Weibull simple, una función Weibull doble y una combinación de ambas según la distribución que mejor se ajustaba a cada parcela. Sin embargo, ninguno de los métodos ha resultado suficientemente válido para predecir la distribución diamétrica. Por último se estimaron el crecimiento en volumen y área basimétrica a partir de la comparación de los vuelos del 2002 y 2011. A pesar de que la tecnología LiDAR era diferente y solo se disponía de un inventario completo, realizado en 2013, los modelos construidos presentan buenas bondades de ajuste. Asimismo, el crecimiento a nivel de pixel se ha mostrado estar relacionado de forma estadísticamente significativa con la pendiente, orientación y altitud media del píxel. ABSTRACT This project goes in depth on the estimation of forest attributes by means of LiDAR data in Fuenfria’s Valley (Cercedilla, Madrid). The available information was two LiDAR flights (2002 and 2011) and a forest inventory consisting of 60 plots (2013). First, six different dasometric attributes (volume, basal area, total aboveground biomass, top height, density and quadratic mean diameter) were estimated in 2013 both at a pixel, stand and forest level. The models were developed using multiple linear regression and were good enough to predict these attributes with great accuracy. Second, the measured diameter distribution at each plot was fitted to a simple and a double Weibull distribution and different methods for its estimation were tested. Neither parameter prediction method nor percentile prediction method were able to account for the diameter distribution. Finally, volume and top height growths were estimated comparing 2011 LiDAR flight with 2002 LiDAR flight. Even though the LiDAR technology was not the same and there was just one forest inventory with sample plots, the models properly explain the growth. Besides, growth at each pixel is significantly related to its average slope, orientation and altitude.

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En esta tesis se propone un procedimiento para evaluar la resistencia mecánica de obleas de silicio cristalino y se aplica en diferentes casos válidos para la industria. En el sector de la industria fotovoltaica predomina la tecnología basada en paneles de silicio cristalino. Estos paneles están compuestos por células solares conectadas en serie y estas células se forman a partir de obleas de silicio. Con el objetivo de disminuir el coste del panel, en los últimos años se ha observado una clara tendencia a la reducción del espesor de las obleas. Esta reducción del espesor modifica la rigidez de las obleas por lo que ha sido necesario modificar la manera tradicional de manipularlas con el objetivo de mantener un bajo ratio de rotura. Para ello, es necesario conocer la resistencia mecánica de las obleas. En la primera parte del trabajo se describen las obleas de silicio, desde su proceso de formación hasta sus propiedades mecánicas. Se muestra la influencia de la estructura cristalográfica en la resistencia y en el comportamiento ya que el cristal de silicio es anisótropo. Se propone también el método de caracterización de la resistencia. Se utiliza un criterio probabilista basado en los métodos de dimensionamiento de materiales frágiles en el que la resistencia queda determinada por los parámetros de la ley de Weibull triparamétrica. Se propone el procedimiento para obtener estos parámetros a partir de campañas de ensayos, modelización numérica por elementos finitos y un algoritmo iterativo de ajuste de los resultados. En la segunda parte de la tesis se describen los diferentes tipos de ensayos que se suelen llevar a cabo con este material. Se muestra además, para cada uno de los ensayos descritos, un estudio comparativo de diferentes modelos de elementos finitos simulando los ensayos. Se comparan tanto los resultados aportados por cada modelo como los tiempos de cálculo. Por último, se presentan tres aplicaciones diferentes donde se ha aplicado este procedimiento de estudio. La primera aplicación consiste en la comparación de la resistencia mecánica de obleas de silicio en función del método de crecimiento del lingote. La resistencia de las tradicionales obleas monocristalinas obtenidas por el método Czochralski y obleas multicristalinas es comparada con las novedosas obleas quasi-monocristalinas obtenidas por métodos de fundición. En la segunda aplicación se evalúa la profundidad de las grietas generadas en el proceso de corte del lingote en obleas. Este estudio se realiza de manera indirecta: caracterizando la resistencia de grupos de obleas sometidas a baños químicos de diferente duración. El baño químico reduce el espesor de las obleas eliminando las capas más dañadas. La resistencia de cada grupo es analizada y la comparación permite obtener la profundidad de las grietas generadas en el proceso de corte. Por último, se aplica este procedimiento a un grupo de obleas con características muy especiales: obleas preparadas para formar células de contacto posterior EWT. Estas obleas presentan miles de agujeros que las debilitan considerablemente. Se aplica el procedimiento de estudio propuesto con un grupo de estas obleas y se compara la resistencia obtenida con un grupo de referencia. Además, se propone un método simplificado de estudio basado en la aplicación de una superficie de intensificación de tensiones. ABSTRACT In this thesis, a procedure to evaluate the mechanical strength of crystalline silicon wafers is proposed and applied in different studies. The photovoltaic industry is mainly based on crystalline silicon modules. These modules are composed of solar cells which are based on silicon wafers. Regarding the cost reduction of solar modules, a clear tendency to use thinner wafers has been observed during last years. Since the stiffness varies with thickness, the manipulation techniques need to be modified in order to guarantee a low breakage rate. To this end, the mechanical strength has to be characterized correctly. In the first part of the thesis, silicon wafers are described including the different ways to produce them and the mechanical properties of interest. The influence of the crystallographic structure in the strength and the behaviour (the anisotropy of the silicon crystal) is shown. In addition, a method to characterize the mechanical strength is proposed. This probabilistic procedure is based on methods to characterize brittle materials. The strength is characterized by the values of the three parameters of the Weibull cumulative distribution function (cdf). The proposed method requires carrying out several tests, to simulate them through Finite Element models and an iterative algorithm in order to estimate the parameters of the Weibull cdf. In the second part of the thesis, the different types of test that are usually employed with these samples are described. Moreover, different Finite Element models for the simulation of each test are compared regarding the information supplied by each model and the calculation times. Finally, the method of characterization is applied to three examples of practical applications. The first application consists in the comparison of the mechanical strength of silicon wafers depending on the ingot growth method. The conventional monocrystalline wafers based on the Czochralski method and the multicrystalline ones are compared with the new quasi-monocrystalline substrates. The second application is related to the estimation of the crack length caused by the drilling process. An indirect way is used to this end: several sets of silicon wafers are subjected to chemical etchings of different duration. The etching procedure reduces the thickness of the wafers removing the most damaged layers. The strength of each set is obtained by means of the proposed method and the comparison permits to estimate the crack length. At last, the procedure is applied to determine the strength of wafers used for the design of back-contact cells of type ETW. These samples are drilled in a first step resulting in silicon wafers with thousands of tiny holes. The strength of the drilled wafers is obtained and compared with the one of a standard set without holes. Moreover, a simplified approach based on a stress intensification surface is proposed.