Criteria for Positioning Active Multilateration Stations Located Close to Distance Measuring Equipment

The need for the use of another surveillance system when radar cannot be used is the reason for the development of the Multilateration (MLT) Systems. However, there are many systems that operate in the L-Band (960-1215MHz) that could produce interference between systems. At airports, some interference has been detected between transmissions of MLT systems (1030MHz and 1090MHz) and Distance Measuring Equipment (DME) (960-1215MHz).

c&d-learning implementation architecture: Adapting e-learning to developing countries

From the educational point of view, the most widespread method in developing countries is on-site education. Technical and economic resources cannot support conventional distance learning infrastructures and it is even worse for courses in universities. They usually suffer a lack of qualified faculty staff, especially in technical degrees. The literature suggest that e-learning is a suitable solution for this problem, but its methods are developed attending to educational necessities of the First World and cannot be applied directly to other contexts. The proposed methodology is a variant of traditional e-learning adapted to the needs of developing countries. E-learning for Cooperation and Development (c&d-learning) is oriented to be used for educational institutions without adequate technical or human resources. In this paper we describe the c&d-learning implementation architecture based on three main phases: hardware, communication and software; e.g. computer and technical equipping, internet accessing and e-learning platform adaptation. Proper adaptation of educational contents to c&d-learning is discussed and a real case of application in which the authors are involved is described: the Ngozi University at Burundi.

Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films

In this work, we analyze the influence of the processing pressure and the substrate–target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature—an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target–substrate distance as it was varied in between 30 and 70 mm.