8 resultados para Low dielectric loss

em Universidad Politécnica de Madrid


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A generalized methodology to design low-profile transmitarray (TA) antennas made of several stacked layers with nonresonant printed phasing elements is presented. A study of the unit cell bandwidth, phase-shift range and tolerances has been conducted considering different numbers of layers. A structure with three metalized layers with capacitive and inductive elements enabling a phase range of nearly 360° and low insertion loss is introduced. A study of the four-layer structure shows improvement in the performance of the unit cells in terms of bandwidth from 2% to more than 20% and a complete phase coverage. Implementations on a flexible substrate of TAs with progressive phase shift operating at 19 GHz are used for validation.

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This work presents a behavioral-analytical hybrid loss model for a buck converter. The model has been designed for a wide operating frequency range up to 4MHz and a low power range (below 20W). It is focused on the switching losses obtained in the power MOSFETs. Main advantages of the model are the fast calculation time and a good accuracy. It has been validated by simulation and experimentally with one Ga, power transistor and two Si MOSFETs. Results show good agreement between measurements and the model.

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This work presents a behavioral-analytical hybrid loss model for a buck converter. The model has been designed for a wide operating frequency range up to 4MHz and a low power range (below 20W). It is focused on the switching losses obtained in the power MOSFETs. Main advantages of the model are the fast calculation time (below 8.5 seconds) and a good accuracy, which makes this model suitable for the optimization process of the losses in the design of a converter. It has been validated by simulation and experimentally with one GaN power transistor and three Si MOSFETs. Results show good agreement between measurements and the model

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In this paper we present a FEC scheme based on simple LDGM codes to protect packetized multimedia streams. We demonstrate that simple LDGM codes working with a limited number of packets (small values of k) obtain recovery capabilities, against bursty packet losses, that are similar to those of other more complex FEC-based schemes designed for this type of channels.

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A planar antenna is introduced that works as a portable system for X-band satellite communications. This antenna is low-profile and modular with dimensions of 40 × 40 × 2.5 × cm. It is composed of a square array of 144 printed circuit elements that cover a wide bandwidth (14.7%) for transmission and reception along with dual and interchangeable circular polarization. A radiation efficiency above 50% is achieved by a low-loss stripline feeding network. This printed antenna has a 3 dB beamwidth of 5°, a maximum gain of 26 dBi and an axial ratio under 1.9 dB over the entire frequency band. The complete design of the antenna is shown, and the measurements are compared with simulations to reveal very good agreement.

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A time division multiplexing (TDM) array for passive multiplexing of identical fibre, optic intensity sensors has been demonstrated. Microbending loss sensors are introduced in fibre optic rings and pressure information is directly detected, demultiplexed and demodulated from the relative amplitude of the first two pulses produced on each ring. Several dynamic ranges from 6 dB to 14 dB are shown. A comparison between both fibre optic ring and Mach-Zehnder structure impulse responses is carried out and the consequences derived from second- and higher-order recirculating ring pulses are also evaluated. This technique can be applied to those TDM intensity sensing schemes which require low cost, high number of identical sensors, and suffer high element loss and undersirable intensity fluctuations at low frequencies.

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This paper includes the experimental study, analysis, redesign and subsequent test of the parts of a closed circuit, low speed wind tunnel which are relevant in terms of total pressure loss. The objective is to lower the energy consumption of this system for given conditions in test chamber, so as to reduce the operational costs. In order to achieve this objective, several tasks were performed as the text shows in its different parts. For these tasks, the ETSIAE wind tunnel was used, although the results of this work can be extrapolated to any wind tunnel with the same characteristics. Part II presents a theoretical previous study of the general running of a closed circuit, low speed wind tunnel, as well as the followed procedure to conduct experimental tests for obtaining the total pressure loss in its parts. Results from these tests and their analysis are included in this part. In part III, the analysis of the influence of corner 1 on the pressure loss takes place. As it is said in this part, corner 1 has great importance in the total pressure loss of the wind tunnel. Therefore, it is the first part that should be modified in order to improve the performances of the wind tunnel. During part IV, an optimised guide vane is designed in order to reduce the pressure loss in corner 1 of the wind tunnel. Software MISES is used to achieve this goal by means of selecting the optimum guide vane. In order to introduce the new guide vane in wind tunnels with affordable costs, the easily constructable criterion is kept during design. For this reason, the guide vane will consist of simple aerodynamic contours. Part V includes some possible improvements for the proposed guide vane, in order to evaluate if there is room for improvement in its design. Finally, part VI includes the tests that were conducted in the wind tunnel with the new guide vane cascade and the analysis of their results, in order to asses whether the proposed design fulfills the requirement of lowering the total pressure loss in the wind tunnel. Part VII gathers the main ideas resulting from the whole work.

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GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.