Laser-fired contact optimization in c-Si solar cells

In this work we study the optimization of laser-fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c-Si and mc-Si solar cell fabrication: thermally grown silicon oxide (SiO2), deposited phosphorus-doped amorphous silicon carbide (a-SiCx/H(n)), aluminum oxide (Al2O3) and silicon nitride (SiNx/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm2 have been obtained

Manufacturing arbitrarily-shaped active waveguides with liquid crystal cladding

Many photonic devices are based on waveguides (WG) whose optical properties can be externally modified. These active WGs are usually obtained with electrooptic materials in either the propagating film (core) or the substrate (cladding). In the second case, the WG tunability is based on the interaction of the active material with the evanescent field of the propagating beam.Liquid crystals (LCs) are an excellent choice as electrooptic active materials since they feature high birefringence, low switching voltage, and relatively simple manufacturing. In this work, we have explored alternative ways to prepare WGs of arbitrary shapes avoiding photolithographic steps. To do this, we have employed a UV laser unit (Spectra Physics)attached to an xyzCNC system mounted on an optical bench. The laser power is 300mW, the spot size can be reduced slightly below 1 µm, and the electromechanicalpositioning is well below that number.Different photoresinshave been evaluated for curing time and uniformity; the results have been compared to equivalent WGs realized by standard photolithographic procedures. Best results have been obtained with several kinds of NOA adhesives (Norland Products Inc.) and SU8 (Microchem). NOA81 optical adhesive has been employed by several groups for the preparation ofmicrochannels [1] and microfluidic systems[2]. In our case, several NOAs having different refractive indices have been tested in order to optimize light coupling and guiding. The adhesive is spinnedonto a substrate, and a number of segmented WGs are written with the laser system. The laser power is attenuated 20 dB. Then the laser spot is swept a number of times (from 1 to 900) on every segment. It has been found that, for example, the optimum number of sweeps for NOA81 is 30-70 times (center of the figure) under these conditions. The WG dimensions obtained with this procedure are about 7 µm high and 12 µm wide.

Study of the temperature distribution in Si nanowires under microscopic laser beam excitation

The use of laser beams as excitation sources for the characterization of semiconductor nanowires (NWs) is largely extended. Raman spectroscopy and photoluminescence (PL) are currently applied to the study of NWs. However, NWs are systems with poor thermal conductivity and poor heat dissipation, which result in unintentional heating under the excitation with a focused laser beam with microscopic size, as those usually used in microRaman and microPL experiments. On the other hand, the NWs have subwavelength diameter, which changes the optical absorption with respect to the absorption in bulk materials. Furthermore, the NW diameter is smaller than the laser beam spot, which means that the optical power absorbed by the NW depends on its position inside the laser beam spot. A detailed analysis of the interaction between a microscopic focused laser beam and semiconductor NWs is necessary for the understanding of the experiments involving laser beam excitation of NWs. We present in this work a numerical analysis of the thermal transport in Si NWs, where the heat source is the laser energy locally absorbed by the NW. This analysis takes account of the optical absorption, the thermal conductivity, the dimensions, diameter and length of the NWs, and the immersion medium. Both free standing and heat-sunk NWs are considered. Also, the temperature distribution in ensembles of NWs is discussed. This analysis intends to constitute a tool for the understanding of the thermal phenomena induced by laser beams in semiconductor NWs.

Magnetic and electric current morphoiogy in the plasma ejected by a laser-irradiated foil

A quasisteady model for the plasma ablated from a thick foil by a laser pulse, at low $lln $ and R /A i within a low, narrow range, is given (4, is absorbed intensity, /zL wavelength, R focalspot radius). An approximate analytical solution is given for the two-dimensional plasma dynamics. At large magnetic Reynolds number Rm, the morphology of the magnetic field shows features in agreement with recent results for high intensities. Current lines are open: electric current flows toward the spot near its axis, then turns and flows away. The efficiency of converting light energy into electric energy peaks at Rm- 1, both the validity of the model. and accuracy of the solution are discussed, The neighborhood of the spot boundary is analyzed in detail by extending classical Prandtl-Meyer results.

Nonuniform irradiation of laser targets

Smoothing of plasma ablated from a laser target under weakly nonuniform irradiation is discussed. Conduction is assumed restricted to a quasisteady layer enclosing the critical surface (large pellet or focal spot, and long, low-intensity, short-wavelength pulse). Light refraction can make the ablated plasma unstable.

Laser induced forward transfer of silver pastes for printing of fingers in c-si cells.

The main objective of this work is to adapt the Laser Induced Forward Techniques (LIFT), a well- known laser direct writing technique for material transfer, to define metallic contacts (fingers and busbars) onto c-Si cells. The silver paste (with viscosity around 30-50 kcPs) is applied over a glass substrate using a coater. The thickness of the paste can be control changing the deposit parameters. The glass with the silver paste is set at a controlled gap over the c-Si cell. A solid state pulsed laser (532 nm) is focused at the glass/silver interface producing a droplet of silver that it is transferred to the c-Si cell. A scanner is used to print lines. The process parameters (silver paste thickness, gap and laser parameters -spot size, pulse energy and overlapping of pulses) are modified and the morphology of the lines is studied using confocal microscopy. Long lines are printed and the uniformity (in thickness and height) is studied. Some examples of metallization of larger areas (up to 10 cm x 10 cm) are presented.