Amplificador de potencia Clase F en banda L basado en tecnología GaN

This paper reports a high efficiency class-F power amplifier based on a gallium nitride high electron mobility transistor (GaN-HEMT), which is designed at the L band of 1640 MHz. The design is based on source and load pull measurements. During the design process, the parasitics of the package of the device are also taken into account in order to achieve the optimal class-F load condition at the intrinsic drain of the transistor. The fabricated class-F power amplifier achieved a maximum drain efficiency (DE) of 77.8% and a output power of 39.6 W on a bandwidth of 280 MHz. Simulation and measurement results have shown good agreement.

Sistemas de distribución en entornos de televisión

Actualmente los entornos de televisión manejan gran cantidad de señales procedentes de diferentes fuentes y suministradas en diferentes estándares: SD-SDI,HD-SDI, 3G, DVB-ASI, señales moduladas en banda L. En la gran mayoría de los centros de radiodifusión es necesario al menos en alguno de los pasos del transporte de señales o de su explotación, la replicación de las diferentes señales de entrada a sus diferentes destinos. En el siguiente PFC se tratará de dar a conocer, los principales sistemas que se emplean en los entornos de televisión para la distribución de las señales que se utilizan en los mismos. Los sistemas distributivos se encargan de distribuir y replicar la señal de entrada a ellos hacia diferentes destinos. La principal idea con la que se diseñan estos sistemas es que la señal de entrada no sufra ningún tipo de degradación como fruto de la replicación o división, siendo incluso aconsejable que determinados sistemas regeneren la señal de entrada a sus salidas. El proyecto se divide en tres capítulos: - Capítulo de conceptos teóricos: En el que se presentarán, los fundamentos teóricos que justifican la tecnología utilizada por los diferentes sistemas. - Capítulo de distribución de señales SDI y ASI: En el cual se presentarán los principales sistemas utilizados, para la distribución de señales SD-SDI, HDSDI, 3G y DVB-ASI. - Capítulo de distribución de señales en banda-L: Donde se mostrarán, los principales sistemas de distribución de señales moduladas en banda-L. Al finalizar la lectura del mismo, el lector debería conocer los principales sistemas que se utilizan en la distribución de señales SDI y ASI y en la distribución de señales en banda L. Comprender mediante la teoría expuesta, y los sistemas presentados, las diferentes problemáticas que afrontan los diferentes equipos y la tecnología que subyace en un segundo plano para solventar las problemáticas. Nowadays, broadcast environments, manage an extensive amount of signals from several sources, using differents standards: SD-SDI, HD-SDI, 3G, DVBASI, modulated L band signals. In most of the broadcast infraestructures, it´s usually needed, at any of the transmissions steps, to replicate the source signal to many destinations. This PFC is intended to shown the main systems used to distribute and replicate signals in broadcast environments. Distributive Systems are used to distribute and replicate the source signals to as many destinations as are needed. The main idea behind the design of those systems is to preserve the integrity of the original signal, due to replications or division classical pathologies. Even it is recomendad that those systems are able to regenerate the original signal, trying to avoid or compesate those pathologies. The PFC is divided in three chapters: - Chapter 1: Theorical concepts: In this chapter is presented the minimal theory needed to understand the complex of the tecnology, for those distributive systems. - Chapter 2: Distribution of SDI and ASI signals: It is shown the main systems used to replicate and distribution of the SDI and ASI signals. It will also treatment the state of the art of the actually new systems. - Chapter 3: Distribution of L band signals. It will be shown the main systems used for L band signals At the end of reading this PFC, the reader must known the main systems used for distribution SDI and ASI signals, also L band signals. It is important to understand the contents of the PFC, the systems, the several problems and the background tecnology that is needed to afront the replication known patologies.

Criteria for Positioning Active Multilateration Stations Located Close to Distance Measuring Equipment

The need for the use of another surveillance system when radar cannot be used is the reason for the development of the Multilateration (MLT) Systems. However, there are many systems that operate in the L-Band (960-1215MHz) that could produce interference between systems. At airports, some interference has been detected between transmissions of MLT systems (1030MHz and 1090MHz) and Distance Measuring Equipment (DME) (960-1215MHz).

Surface velocity and ice discharge of the ice cap on King George Island, Antarctica

Glaciers on King George Island, Antarctica, have shown retreat and surface lowering in recent decades, concurrent with increasing air temperatures. A large portion of the glacier perimeter is ocean-terminating, suggesting possible large mass losses due to calving and submarine melting. Here we estimate the ice discharge into the ocean for the King George Island ice cap. L-band synthetic aperture radar images covering the time-span January 2008 to January 2011 over King George Island are processed using an intensity-tracking algorithm to obtain surface velocity measurements. Pixel offsets from 40 pairs of radar images are analysed and inverted to estimate a weighted average surface velocity field. Ice thicknesses are derived from simple principles of ice flow mechanics using the computed surface velocity fields and in situ thickness data. The maximum ice surface speeds reach mayor que 225 m/yr, and the total ice discharge for the analysed flux gates of King George Island is estimated to be 0.720+/-0.428 Gt/yr, corresponding to a specific mass loss of 0.64+/-0.38 m w.e./yr over the area of the entire ice cap (1127 km2).

Intermediate Band Solar Cell with Extreme Broadband Spectrum Quantum Efficiency

We report, for the first time, about an intermediate band solar cell implemented with InAs/AlGaAs quantum dots whose photoresponse expands from 250 to ~ 6000  nm. To our knowledge, this is the broadest quantum efficiency reported to date for a solar cell and demonstrates that the intermediate band solar cell is capable of producing photocurrent when illuminated with photons whose energy equals the energy of the lowest band gap. We show experimental evidence indicating that this result is in agreement with the theory of the intermediate band solar cell, according to which the generation recombination between the intermediate band and the valence band makes this photocurrent detectable. © 2015 American Physical Society

Thermodynamical Phase Noise in Oscillators Based on L-C Resonators

Using a new Admittance-based model for electrical noise able to handle Fluctuations and Dissipations of electrical energy, we explain the phase noise of oscillators that use feedback around L-C resonators. We show that Fluctuations produce the Line Broadening of their output spectrum around its mean frequency f0 and that the Pedestal of phase noise far from f0 comes from Dissipations modified by the feedback electronics. The charge noise power 4FkT/R C2/s that disturbs the otherwise periodic fluctuation of charge these oscillators aim to sustain in their L-C-R resonator, is what creates their phase noise proportional to Leeson’s noise figure F and to the charge noise power 4kT/R C2/s of their capacitance C that today’s modelling would consider as the current noise density in A2/Hz of their resistance R. Linked with this (A2/Hz?C2/s) equivalence, R becomes a random series in time of discrete chances to Dissipate energy in Thermal Equilibrium (TE) giving a similar series of discrete Conversions of electrical energy into heat when the resonator is out of TE due to the Signal power it handles. Therefore, phase noise reflects the way oscillators sense thermal exchanges of energy with their environment.

Thermodynamical Phase Noise in Oscillators Based on L-C Resonators (Foundations)

Using a new Admittance-based model for electrical noise able to handle Fluctuations and Dissipations of electrical energy, we explain the phase noise of oscillators that use feedback around L-C resonators. We show that Fluctuations produce the Line Broadening of their output spectrum around its mean frequency f0 and that the Pedestal of phase noise far from f0 comes from Dissipations modified by the feedback electronics. The charge noise power 4FkT/R C2/s that disturbs the otherwise periodic fluctuation of charge these oscillators aim to sustain in their L-C-R resonator, is what creates their phase noise proportional to Leeson’s noise figure F and to the charge noise power 4kT/R C2/s of their capacitance C that today’s modelling would consider as the current noise density in A2/Hz of their resistance R. Linked with this (A2/Hz?C2/s) equivalence, R becomes a random series in time of discrete chances to Dissipate energy in Thermal Equilibrium (TE) giving a similar series of discrete Conversions of electrical energy into heat when the resonator is out of TE due to the Signal power it handles. Therefore, phase noise reflects the way oscillators sense thermal exchanges of energy with their environment

Desarrollo de estructuras nanofotonicas de campo cercano para intensificacion localizada de luz en celulas solares de banda intermedia - Near-field nanophotonic structures for localized light enhancement in intermediate band solar cells

This doctoral thesis explores some of the possibilities that near-field optics can bring to photovoltaics, and in particular to quantum-dot intermediate band solar cells (QD-IBSCs). Our main focus is the analytical optimization of the electric field distribution produced in the vicinity of single scattering particles, in order to produce the highest possible absorption enhancement in the photovoltaic medium in their surroundings. Near-field scattering structures have also been fabricated in laboratory, allowing the application of the previously studied theoretical concepts to real devices. We start by looking into the electrostatic scattering regime, which is only applicable to sub-wavelength sized particles. In this regime it was found that metallic nano-spheroids can produce absorption enhancements of about two orders of magnitude on the material in their vicinity, due to their strong plasmonic resonance. The frequency of such resonance can be tuned with the shape of the particles, allowing us to match it with the optimal transition energies of the intermediate band material. Since these metallic nanoparticles (MNPs) are to be inserted inside the cell photovoltaic medium, they should be coated by a thin insulating layer to prevent electron-hole recombination at their surface. This analysis is then generalized, using an analytical separation-of-variables method implemented in Mathematica7.0, to compute scattering by spheroids of any size and material. This code allowed the study of the scattering properties of wavelengthsized particles (mesoscopic regime), and it was verified that in this regime dielectric spheroids perform better than metallic. The light intensity scattered from such dielectric spheroids can have more than two orders of magnitude than the incident intensity, and the focal region in front of the particle can be shaped in several ways by changing the particle geometry and/or material. Experimental work was also performed in this PhD to implement in practice the concepts studied in the analysis of sub-wavelength MNPs. A wet-coating method was developed to self-assemble regular arrays of colloidal MNPs on the surface of several materials, such as silicon wafers, amorphous silicon films, gallium arsenide and glass. A series of thermal and chemical tests have been performed showing what treatments the nanoparticles can withstand for their embedment in a photovoltaic medium. MNPs arrays are then inserted in an amorphous silicon medium to study the effect of their plasmonic near-field enhancement on the absorption spectrum of the material. The self-assembled arrays of MNPs constructed in these experiments inspired a new strategy for fabricating IBSCs using colloidal quantum dots (CQDs). Such CQDs can be deposited in self-assembled monolayers, using procedures similar to those developed for the patterning of colloidal MNPs. The use of CQDs to form the intermediate band presents several important practical and physical advantages relative to the conventional dots epitaxially grown by the Stranski-Krastanov method. Besides, this provides a fast and inexpensive method for patterning binary arrays of QDs and MNPs, envisioned in the theoretical part of this thesis, in which the MNPs act as antennas focusing the light in the QDs and therefore boosting their absorption

Application of photoluminescence and electroluminescence techniques to the characterization of intermediate band solar cells

The intermediatebandsolarcell (IBSC) is a photovoltaic device with a theoretical conversion efficiency limit of 63.2%. In recent years many attempts have been made to fabricate an intermediateband material which behaves as the theory states. One characteristic feature of an IBSC is its luminescence spectrum. In this work the temperature dependence of the photoluminescence (PL) and electroluminescence (EL) spectra of InAs/GaAs QD-IBSCs together with their reference cell have been studied. It is shown that EL measurements provide more reliable information about the behaviour of the IB material inside the IBSC structure than PL measurements. At low temperatures, the EL spectra are consistent with the quasi-Fermi level splits described by the IBSC model, whereas at room temperature they are not. This result is in agreement with previously reported analysis of the quantum efficiency of the solarcells

Freeform Fresnel RXI-RR Köhler design with spectrum-splitting for photovoltaics

The development of a novel optical design for the high concentration photovoltaics (HPCV) nonimaging concentrator (>500x) that utilizes a built-in spectrum splitting concept is presented. The primary optical element (POE) is a flat Fresnel lens and the secondary optical element (SOE) is a free-form RXI-type concentrator with a band-pass filter embedded in it. The POE and SOE perform Köhler integration to produce light homogenization on the receiver. The system uses a combination of a commercial concentration GaInP/GaInAs/Ge 3J cell and a concentration Back-PointContact (BPC) silicon cell for efficient spectral utilization, and an external confinement technique for recovering the 3J cell’s reflection. A design target of an “equivalent” cell efficiency ~46% is predicted using commercial 39% 3J and 26% Si cells. A projected CPV module efficiency of greater than 38% is achievable at a concentration level greater than 500X with a wide acceptance angle of ±1º. A first proof-of concept receiver prototype has been manufactured using a simpler optical architecture (with a lower concentration, ~100x and lower simulated added efficiency), and experimental measurements have shown up to 39.8% 4J receiver efficiency using a 3J cell with a peak efficiency of 36.9%

Free-form Fresnel RXI-RR Köhler design for high-concentration photovoltaics with spectrum-splitting

Development of a novel HCPV nonimaging concentrator with high concentration (>500x) and built-in spectrum splitting concept is presented. It uses the combination of a commercial concentration GaInP/GaInAs/Ge 3J cell and a concentration Back-Point-Contact (BPC) silicon cell for efficient spectral utilization, and external confinement techniques for recovering the 3J cell's reflection. The primary optical element (POE) is a flat Fresnel lens and the secondary optical element (SOE) is a free-form RXI-type concentrator with a band-pass filter embedded in it - Both the POE and SOE performing Köhler integration to produce light homogenization on the receiver. The band-pass filter transmits the IR photons in the 900-1200 nm band to the silicon cell. A design target of an "equivalent" cell efficiency ~46% is predicted using commercial 39% 3J and 26% Si cells. A projected CPV module efficiency of greater than 38% is achievable at a concentration level larger than 500X with a wide acceptance angle of ±1°. A first proof-of concept receiver prototype has been manufactured using a simpler optical architecture (with a lower concentration, ~100x and lower simulated added efficiency), and experimental measurements have shown up to 39.8% 4J receiver efficiency using a 3J cell with a peak efficiency of 36.9%.

Research on intermediate band solar cells and development of experimental techniques for their characterization under concentrated illumination

Abstract This work is a contribution to the research and development of the intermediate band solar cell (IBSC), a high efficiency photovoltaic concept that features the advantages of both low and high bandgap solar cells. The resemblance with a low bandgap solar cell comes from the fact that the IBSC hosts an electronic energy band -the intermediate band (IB)- within the semiconductor bandgap. This IB allows the collection of sub-bandgap energy photons by means of two-step photon absorption processes, from the valence band (VB) to the IB and from there to the conduction band (CB). The exploitation of these low energy photons implies a more efficient use of the solar spectrum. The resemblance of the IBSC with a high bandgap solar cell is related to the preservation of the voltage: the open-circuit voltage (VOC) of an IBSC is not limited by any of the sub-bandgaps (involving the IB), but only by the fundamental bandgap (defined from the VB to the CB). Nevertheless, the presence of the IB allows new paths for electronic recombination and the performance of the IBSC is degraded at 1 sun operation conditions. A theoretical argument is presented regarding the need for the use of concentrated illumination in order to circumvent the degradation of the voltage derived from the increase in the recombi¬nation. This theory is supported by the experimental verification carried out with our novel characterization technique consisting of the acquisition of photogenerated current (IL)-VOC pairs under low temperature and concentrated light. Besides, at this stage of the IBSC research, several new IB materials are being engineered and our novel character¬ization tool can be very useful to provide feedback on their capability to perform as real IBSCs, verifying or disregarding the fulfillment of the “voltage preservation” principle. An analytical model has also been developed to assess the potential of quantum-dot (QD)-IBSCs. It is based on the calculation of band alignment of III-V alloyed heterojunc-tions, the estimation of the confined energy levels in a QD and the calculation of the de¬tailed balance efficiency. Several potentially useful QD materials have been identified, such as InAs/AlxGa1-xAs, InAs/GaxIn1-xP, InAs1-yNy/AlAsxSb1-x or InAs1-zNz/Alx[GayIn1-y]1-xP. Finally, a model for the analysis of the series resistance of a concentrator solar cell has also been developed to design and fabricate IBSCs adapted to 1,000 suns. Resumen Este trabajo contribuye a la investigación y al desarrollo de la célula solar de banda intermedia (IBSC), un concepto fotovoltaico de alta eficiencia que auna las ventajas de una célula solar de bajo y de alto gap. La IBSC se parece a una célula solar de bajo gap (o banda prohibida) en que la IBSC alberga una banda de energía -la banda intermedia (IB)-en el seno de la banda prohibida. Esta IB permite colectar fotones de energía inferior a la banda prohibida por medio de procesos de absorción de fotones en dos pasos, de la banda de valencia (VB) a la IB y de allí a la banda de conducción (CB). El aprovechamiento de estos fotones de baja energía conlleva un empleo más eficiente del espectro solar. La semejanza antre la IBSC y una célula solar de alto gap está relacionada con la preservación del voltaje: la tensión de circuito abierto (Vbc) de una IBSC no está limitada por ninguna de las fracciones en las que la IB divide a la banda prohibida, sino que está únicamente limitada por el ancho de banda fundamental del semiconductor (definido entre VB y CB). No obstante, la presencia de la IB posibilita nuevos caminos de recombinación electrónica, lo cual degrada el rendimiento de la IBSC a 1 sol. Este trabajo argumenta de forma teórica la necesidad de emplear luz concentrada para evitar compensar el aumento de la recom¬binación de la IBSC y evitar la degradación del voltage. Lo anterior se ha verificado experimentalmente por medio de nuestra novedosa técnica de caracterización consistente en la adquisicin de pares de corriente fotogenerada (IL)-VOG en concentración y a baja temperatura. En esta etapa de la investigación, se están desarrollando nuevos materiales de IB y nuestra herramienta de caracterizacin está siendo empleada para realimentar el proceso de fabricación, comprobando si los materiales tienen capacidad para operar como verdaderas IBSCs por medio de la verificación del principio de preservación del voltaje. También se ha desarrollado un modelo analítico para evaluar el potencial de IBSCs de puntos cuánticos. Dicho modelo está basado en el cálculo del alineamiento de bandas de energía en heterouniones de aleaciones de materiales III-V, en la estimación de la energía de los niveles confinados en un QD y en el cálculo de la eficiencia de balance detallado. Este modelo ha permitido identificar varios materiales de QDs potencialmente útiles como InAs/AlxGai_xAs, InAs/GaxIni_xP, InAsi_yNy/AlAsxSbi_x ó InAsi_zNz/Alx[GayIni_y]i_xP. Finalmente, también se ha desarrollado un modelado teórico para el análisis de la resistencia serie de una célula solar de concentración. Gracias a dicho modelo se han diseñado y fabricado IBSCs adaptadas a 1.000 soles.

Voltage recovery in intermediate band solar cells

The intermediate band solar cell (IBSC) is based on a novel photovoltaic concept and has a limiting efficiency of 63.2%, which compares favorably with the 40.7% efficiency of a conventional, single junction solar cell. It is characterized by a material hosting a collection of energy levels within its bandgap, allowing the cell to exploit photons with sub-bandgap energies in a two-step absorption process, thus improving the utilization of the solar spectrum. However, these intermediate levels are often regarded as an inherent source of supplementary recombination, although this harmful effect can in theory be counteracted by the use of concentrated light. We present here a novel, low-temperature characterization technique using concentrated light that reveals how the initially enhanced recombination in the IBSC is reduced so that its open-circuit voltage is completely recovered and reaches that of a conventional solar cell.

HF spectrum activity prediction model based on HMM for cognitive radio applications

Although most of the research on Cognitive Radio is focused on communication bands above the HF upper limit (30 MHz), Cognitive Radio principles can also be applied to HF communications to make use of the extremely scarce spectrum more efficiently. In this work we consider legacy users as primary users since these users transmit without resorting to any smart procedure, and our stations using the HFDVL (HF Data+Voice Link) architecture as secondary users. Our goal is to enhance an efficient use of the HF band by detecting the presence of uncoordinated primary users and avoiding collisions with them while transmitting in different HF channels using our broad-band HF transceiver. A model of the primary user activity dynamics in the HF band is developed in this work to make short-term predictions of the sojourn time of a primary user in the band and avoid collisions. It is based on Hidden Markov Models (HMM) which are a powerful tool for modelling stochastic random processes and are trained with real measurements of the 14 MHz band. By using the proposed HMM based model, the prediction model achieves an average 10.3% prediction error rate with one minute-long channel knowledge but it can be reduced when this knowledge is extended: with the previous 8 min knowledge, an average 5.8% prediction error rate is achieved. These results suggest that the resulting activity model for the HF band could actually be used to predict primary users activity and included in a future HF cognitive radio based station.

Study of the Electrical Behavior in Intermediate Band-Si Junctions

In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling effect in this bilayer that we have associated to an Intermediate Band (IB) formation in the Ti supersaturated Si layer. Time-of-flight secondary ion mass spectrometry (ToFSIMS) measurements show a Ti depth profile with concentrations well above the theoretical limit required to the IB formation. Sheet resistance and Hall mobility measurements in the van der Pauw configuration of these bilayers exhibit a clear dependence with the different measurement currents introduced (1menor queA-1mA). We find that the electrical transport properties measured present an electrical decoupling effect in the bilayer as function of the temperature. The dependence of this effect with the injected current could be explained in terms of an additional current flow in the junction from the substrate to the IB layer and in terms of the voltage dependence in the junction with the measurement current.