Intrusion-Resilient Integrity in Data-Centric Unattended WSNs

Unattended Wireless Sensor Networks (UWSNs) operate in autonomous or disconnected mode: sensed data is collected periodically by an itinerant sink. Between successive sink visits, sensor-collected data is subject to some unique vulnerabilities. In particular, while the network is unattended, a mobile adversary (capable of subverting up to a fraction of sensors at a time) can migrate between compromised sets of sensors and inject fraudulent data. In this paper, we provide two collaborative authentication techniques that allow an UWSN to maintain integrity and authenticity of sensor data-in the presence of a mobile adversary-until the next sink visit. Proposed schemes use simple, standard, and inexpensive symmetric cryptographic primitives, coupled with key evolution and few message exchanges. We study their security and effectiveness, both analytically and via simulations. We also assess their robustness and show how to achieve the desired trade-off between performance and security.

Self-healing in unattended wireless sensor networks

Wireless sensor networks (WSNs) appeal to a wide range of applications that involve the monitoring of various physical phenomena. However, WSNs are subject to many threats. In particular, lack of pervasive tamper-resistant hardware results in sensors being easy targets for compromise. Having compromised a sensor, the adversary learns all the sensor secrets, allowing it to later encrypt/decrypt or authenticate messages on behalf of that sensor. This threat is particularly relevant in the novel unattended wireless sensor networks (UWSNs) scenario. UWSNs operate without constant supervision by a trusted sink. UWSN?s unattended nature and increased exposure to attacks prompts the need for special techniques geared towards regaining security after being compromised. In this article, we investigate cooperative self-healing in UWSNs and propose various techniques to allow unattended sensors to recover security after compromise. Our techniques provide seamless healing rates even against a very agile and powerful adversary. The effectiveness and viability of our proposed techniques are assessed by thorough analysis and supported by simulation results. Finally, we introduce some real-world issues affecting UWSN deployment and provide some solutions for them as well as a few open problems calling for further investigation.

Resistencia y progreso: el proyecto político de Lina Bo Bardi(1944-1964)

La presente investigación parte de la constatación de que los estudios realizados hasta la fecha sobre la obra de la arquitecto Lina Bo Bardi, familiarmente conocida como Lina, no contemplan una faceta fundamental de la misma: su naturaleza política. Nacida en Italia, en 1914, emigrada a Brasil, en 1946, la arquitecto sufrió el hostigamiento de dos dictaduras: la fascista (1922-1943), en su patria natal; la militar (1964-ca.1980), en la que elegiría para residir5. Al igual que las medidas represivas de tales gobiernos, la Segunda Guerra Mundial marcaría su persona profundamente, infundiéndole una visión política del mundo. Inspirada en la ideología comunista, y los principios humanistas que intelectuales de izquierda difundieran en Italia durante la Guerra, dicha visión impregnaría su legado de tal manera que ambos pueden entenderse como una única cosa. Esta posibilidad sugiere el arranque del escrito que sigue. Motiva también el emprendimiento del mismo la relativa parcialidad con que los estudios aludidos refieren, en sus desarrollos, el contexto social, político y cultural en que Lina vivió y trabajó. La llamada al contexto en tales revisiones apenas se pone en relación con el perfil ideológico y la actividad profesional de Bo Bardi. Ello explica por qué existe un buen número de monografías sobre las diferentes facetas de la carrera de la arquitecto y casi ninguna revisión crítica global de su legado. Por otro lado, los estudios citados tienden a subestimar la influencia, sobre el pensamiento y labor de Lina, de Pietro María Bardi, el periodista y marchante de arte con quien se casaría. Aunque se ha apuntado en alguna ocasión, tal influencia no se ha desglosado en las razones que fundamentan el objetivo político de las iniciativas que, bien conjunta o separadamente, promoverían a partir de su encuentro. Otro aspecto relevante al respecto ha sido la falta de consideración, por parte de los estudios mencionados, de la continuidad entre el enfoque con que Lina trabajó primero en Italia y, posteriormente, en Brasil. Por lo general, las revisiones de su obra se han concentrado en una de las dos áreas geográficas, desestimando el valor que el temprano posicionamiento ideológico de Bo Bardi, en el país mediterráneo, tendría para las responsabilidades que asumiría en el atlántico. Las lagunas enunciadas invitan a examinar la actividad de Lina desde un punto de vista inédito: el de su entendimiento de la arquitectura como una función política mediante la que transformar el mundo. Motivado por la voluntad de disipar tales lagunas, el análisis del universo creativo de Bo Bardi a través de las lentes de su entorno, antes que de las suyas propias, contribuye, en este volumen, a ubicar su obra en el curso de la historia, asunto aún pendiente en su bibliografía.

Graphene for energy storage

Due to its excellent mechanical, termal, optical and electrical properties, graphene has recently attracted increasing attention. It provides a huge surface area (2630m2 g-1) and high electrical conductivity, making it an attractive material for applications in energy-storage systems.

Optimizing phosphorus diffusion for photovoltaic applications: peak doping, inactive phosphorus,gettering, and contact formation

The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl3 source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density Npeak = 8.0 × 1018 cm−3 and a junction depth dj = 0.4 μm, resulting in a sheet resistivityρsh = 380 Ω/sq and a saturation current-density J0 below 10 fA/cm2. With these properties, the POCl3 process can compete with ion implantation or doped oxide approaches.