UV laser-induced high resolution cleaving of Si wafers for micro-nano devices and polymeric waveguide characterization

In this work we propose a method for cleaving silicon-based photonic chips by using a laser based micromachining system, consisting of a ND:YVO4laser emitting at 355 nm in nanosecond pulse regime and a micropositioning system. The laser makes grooved marks placed at the desired locations and directions where cleaves have to be initiated, and after several processing steps, a crack appears and propagate along the crystallographic planes of the silicon wafer. This allows cleavage of the chips automatically and with high positioning accuracy, and provides polished vertical facets with better quality than the obtained with other cleaving process, which eases the optical characterization of photonic devices. This method has been found to be particularly useful when cleaving small-sized chips, where manual cleaving is hard to perform; and also for polymeric waveguides, whose facets get damaged or even destroyed with polishing or manual cleaving processing. Influence of length of the grooved line and speed of processing is studied for a variety of silicon chips. An application for cleaving and characterizing sol–gel waveguides is presented. The total amount of light coupled is higher than when using any other procedure.

Application of laser-induced plasma spectroscopy to the measurement of transition probabilities of Ca I

We present improved experimental transition probabilities for the optical Ca I 4s4p-4s4d and 4s4p-4p2multiplets. The values were determined with an absolute uncertainty of 10%. Transition probabilities have been determined by the branching ratios from the measurement of relative line intensities emitted by laser-induced plasma (LIP). The line intensities were obtained with the target (leadcalcium) placed in argon atmosphere at 6 Torr, recorded at a 2.5 µs delay from the laser pulse, which provides appropriate measurement conditions, and analysed between 350.0 and 550.0 nm. They are measured when the plasma reaches local thermodynamic equilibrium (LTE). The plasma is characterized by electron temperature (T) of 11400 K and an electron number density (Ne) of 1.1 x 1016 cm-3. The influence self-absorption has been estimated for every line, and plasma homogeneity has been checked. The values obtained were compared with previous experimental values in the literature. The method for measurement of transition probabilities using laser-induced plasma as spectroscopic source has been checked.

Vortex pinning vs superconducting wire network: origin of periodic oscillations induced by applied magnetic fields in superconducting films with arrays of nanomagnets

Hybrid magnetic arrays embedded in superconducting films are ideal systems to study the competition between different physical (such as the coherence length) and structural length scales such as are available in artificially produced structures. This interplay leads to oscillation in many magnetically dependent superconducting properties such as the critical currents, resistivity and magnetization. These effects are generally analyzed using two distinct models based on vortex pinning or wire network. In this work, we show that for magnetic dot arrays, as opposed to antidot (i.e. holes) arrays, vortex pinning is the main mechanism for field induced oscillations in resistance R(H), critical current Ic(H), magnetization M(H) and ac-susceptibility χ ac(H) in a broad temperature range. Due to the coherence length divergence at Tc, a crossover to wire network behaviour is experimentally found. While pinning occurs in a wide temperature range up to Tc, wire network behaviour is only present in a very narrow temperature window close to Tc. In this temperature interval, contributions from both mechanisms are operational but can be experimentally distinguished.