A speech interface for air traffic control terminals

Several issues concerning the current use of speech interfaces are discussed and the design and development of a speech interface that enables air traffic controllers to command and control their terminals by voice is presented. A special emphasis is made in the comparison between laboratory experiments and field experiments in which a set of ergonomics-related effects are detected that cannot be observed in the controlled laboratory experiments. The paper presents both objective and subjective performance obtained in field evaluation of the system with student controllers at an air traffic control (ATC) training facility. The system exhibits high word recognition test rates (0.4% error in Spanish and 1.5% in English) and low command error (6% error in Spanish and 10.6% error in English in the field tests). Subjective impression has also been positive, encouraging future development and integration phases in the Spanish ATC terminals designed by Aeropuertos Españoles y Navegación Aérea (AENA).

Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability

AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

Decomposition driven interface evolution for layers of binary mixtures: I. Model dirivation and base states

A dynamical model is proposed to describe the coupled decomposition and profile evolution of a free surfacefilm of a binary mixture. An example is a thin film of a polymer blend on a solid substrate undergoing simultaneous phase separation and dewetting. The model is based on model-H describing the coupled transport of the mass of one component (convective Cahn-Hilliard equation) and momentum (Navier-Stokes-Korteweg equations) supplemented by appropriate boundary conditions at the solid substrate and the free surface. General transport equations are derived using phenomenological nonequilibrium thermodynamics for a general nonisothermal setting taking into account Soret and Dufour effects and interfacial viscosity for the internal diffuse interface between the two components. Focusing on an isothermal setting the resulting model is compared to literature results and its base states corresponding to homogeneous or vertically stratified flat layers are analyzed.

Decomposition driven interface evolution for layers of binary mixtures: I. Model dirivation and base states

Algebraic topology (homology) is used to analyze the state of spiral defect chaos in both laboratory experiments and numerical simulations of Rayleigh-Bénard convection. The analysis reveals topological asymmetries that arise when non-Boussinesq effects are present. The asymmetries are found in different flow fields in the simulations and are robust to substantial alterations to flow visualization conditions in the experiment. However, the asymmetries are not observable using conventional statistical measures. These results suggest homology may provide a new and general approach for connecting spatiotemporal observations of chaotic or turbulent patterns to theoretical models.

Optical Nonlinearities at the Interface between Glass and Liquid Crystal

In this paper, the optical behavior of a nonlinear interface is studied. The nonlinear medium has been a nematic liquid crystal, namely MBBA, and the nonlinear one, glasses of different types (F-10 and F-2) depending on the experimental needs. The anchoring forces at the boundary have been found to inhibit the action of the evanescent field in the case of total internal reflection. Most of observed nonlinearities are due to thermal effects. As a consequence, liquid crystals do not seem to be good candidates for total internal reflection optical bistability.

Thermal, stress, and traps effects in AlGaN/GaN HEMTs

GaN y AlN son materiales semiconductores piezoeléctricos del grupo III-V. La heterounión AlGaN/GaN presenta una elevada carga de polarización tanto piezoeléctrica como espontánea en la intercara, lo que genera en su cercanía un 2DEG de grandes concentración y movilidad. Este 2DEG produce una muy alta potencia de salida, que a su vez genera una elevada temperatura de red. Las tensiones de puerta y drenador provocan un stress piezoeléctrico inverso, que puede afectar a la carga de polarización piezoeléctrica y así influir la densidad 2DEG y las características de salida. Por tanto, la física del dispositivo es relevante para todos sus aspectos eléctricos, térmicos y mecánicos. En esta tesis se utiliza el software comercial COMSOL, basado en el método de elementos finitos (FEM), para simular el comportamiento integral electro-térmico, electro-mecánico y electro-térmico-mecánico de los HEMTs de GaN. Las partes de acoplamiento incluyen el modelo de deriva y difusión para el transporte electrónico, la conducción térmica y el efecto piezoeléctrico. Mediante simulaciones y algunas caracterizaciones experimentales de los dispositivos, hemos analizado los efectos térmicos, de deformación y de trampas. Se ha estudiado el impacto de la geometría del dispositivo en su auto-calentamiento mediante simulaciones electro-térmicas y algunas caracterizaciones eléctricas. Entre los resultados más sobresalientes, encontramos que para la misma potencia de salida la distancia entre los contactos de puerta y drenador influye en generación de calor en el canal, y así en su temperatura. El diamante posee une elevada conductividad térmica. Integrando el diamante en el dispositivo se puede dispersar el calor producido y así reducir el auto-calentamiento, al respecto de lo cual se han realizado diversas simulaciones electro-térmicas. Si la integración del diamante es en la parte superior del transistor, los factores determinantes para la capacidad disipadora son el espesor de la capa de diamante, su conductividad térmica y su distancia a la fuente de calor. Este procedimiento de disipación superior también puede reducir el impacto de la barrera térmica de intercara entre la capa adaptadora (buffer) y el substrato. La muy reducida conductividad eléctrica del diamante permite que pueda contactar directamente el metal de puerta (muy cercano a la fuente de calor), lo que resulta muy conveniente para reducir el auto-calentamiento del dispositivo con polarización pulsada. Por otra parte se simuló el dispositivo con diamante depositado en surcos atacados sobre el sustrato como caminos de disipación de calor (disipador posterior). Aquí aparece una competencia de factores que influyen en la capacidad de disipación, a saber, el surco atacado contribuye a aumentar la temperatura del dispositivo debido al pequeño tamaño del disipador, mientras que el diamante disminuiría esa temperatura gracias a su elevada conductividad térmica. Por tanto, se precisan capas de diamante relativamente gruesas para reducer ele efecto de auto-calentamiento. Se comparó la simulación de la deformación local en el borde de la puerta del lado cercano al drenador con estructuras de puerta estándar y con field plate, que podrían ser muy relevantes respecto a fallos mecánicos del dispositivo. Otras simulaciones se enfocaron al efecto de la deformación intrínseca de la capa de diamante en el comportamiento eléctrico del dispositivo. Se han comparado los resultados de las simulaciones de la deformación y las características eléctricas de salida con datos experimentales obtenidos por espectroscopía micro-Raman y medidas eléctricas, respectivamente. Los resultados muestran el stress intrínseco en la capa producido por la distribución no uniforme del 2DEG en el canal y la región de acceso. Además de aumentar la potencia de salida del dispositivo, la deformación intrínseca en la capa de diamante podría mejorar la fiabilidad del dispositivo modulando la deformación local en el borde de la puerta del lado del drenador. Finalmente, también se han simulado en este trabajo los efectos de trampas localizados en la superficie, el buffer y la barrera. Las medidas pulsadas muestran que tanto las puertas largas como las grandes separaciones entre los contactos de puerta y drenador aumentan el cociente entre la corriente pulsada frente a la corriente continua (lag ratio), es decir, disminuir el colapse de corriente (current collapse). Este efecto ha sido explicado mediante las simulaciones de los efectos de trampa de superficie. Por su parte, las referidas a trampas en el buffer se enfocaron en los efectos de atrapamiento dinámico, y su impacto en el auto-calentamiento del dispositivo. Se presenta también un modelo que describe el atrapamiento y liberación de trampas en la barrera: mientras que el atrapamiento se debe a un túnel directo del electrón desde el metal de puerta, el desatrapamiento consiste en la emisión del electrón en la banda de conducción mediante túnel asistido por fonones. El modelo también simula la corriente de puerta, debida a la emisión electrónica dependiente de la temperatura y el campo eléctrico. Además, también se ilustra la corriente de drenador dependiente de la temperatura y el campo eléctrico. ABSTRACT GaN and AlN are group III-V piezoelectric semiconductor materials. The AlGaN/GaN heterojunction presents large piezoelectric and spontaneous polarization charge at the interface, leading to high 2DEG density close to the interface. A high power output would be obtained due to the high 2DEG density and mobility, which leads to elevated lattice temperature. The gate and drain biases induce converse piezoelectric stress that can influence the piezoelectric polarization charge and further influence the 2DEG density and output characteristics. Therefore, the device physics is relevant to all the electrical, thermal, and mechanical aspects. In this dissertation, by using the commercial finite-element-method (FEM) software COMSOL, we achieved the GaN HEMTs simulation with electro-thermal, electro-mechanical, and electro-thermo-mechanical full coupling. The coupling parts include the drift-diffusion model for the electron transport, the thermal conduction, and the piezoelectric effect. By simulations and some experimental characterizations, we have studied the device thermal, stress, and traps effects described in the following. The device geometry impact on the self-heating was studied by electro-thermal simulations and electrical characterizations. Among the obtained interesting results, we found that, for same power output, the distance between the gate and drain contact can influence distribution of the heat generation in the channel and thus influence the channel temperature. Diamond possesses high thermal conductivity. Integrated diamond with the device can spread the generated heat and thus potentially reduce the device self-heating effect. Electro-thermal simulations on this topic were performed. For the diamond integration on top of the device (top-side heat spreading), the determinant factors for the heat spreading ability are the diamond thickness, its thermal conductivity, and its distance to the heat source. The top-side heat spreading can also reduce the impact of thermal boundary resistance between the buffer and the substrate on the device thermal behavior. The very low electrical conductivity of diamond allows that it can directly contact the gate metal (which is very close to the heat source), being quite convenient to reduce the self-heating for the device under pulsed bias. Also, the diamond coated in vias etched in the substrate as heat spreading path (back-side heat spreading) was simulated. A competing mechanism influences the heat spreading ability, i.e., the etched vias would increase the device temperature due to the reduced heat sink while the coated diamond would decrease the device temperature due to its higher thermal conductivity. Therefore, relative thick coated diamond is needed in order to reduce the self-heating effect. The simulated local stress at the gate edge of the drain side for the device with standard and field plate gate structure were compared, which would be relevant to the device mechanical failure. Other stress simulations focused on the intrinsic stress in the diamond capping layer impact on the device electrical behaviors. The simulated stress and electrical output characteristics were compared to experimental data obtained by micro-Raman spectroscopy and electrical characterization, respectively. Results showed that the intrinsic stress in the capping layer caused the non-uniform distribution of 2DEG in the channel and the access region. Besides the enhancement of the device power output, intrinsic stress in the capping layer can potentially improve the device reliability by modulating the local stress at the gate edge of the drain side. Finally, the surface, buffer, and barrier traps effects were simulated in this work. Pulsed measurements showed that long gates and distances between gate and drain contact can increase the gate lag ratio (decrease the current collapse). This was explained by simulations on the surface traps effect. The simulations on buffer traps effects focused on illustrating the dynamic trapping/detrapping in the buffer and the self-heating impact on the device transient drain current. A model was presented to describe the trapping and detrapping in the barrier. The trapping was the electron direct tunneling from the gate metal while the detrapping was the electron emission into the conduction band described by phonon-assisted tunneling. The reverse gate current was simulated based on this model, whose mechanism can be attributed to the temperature and electric field dependent electron emission in the barrier. Furthermore, the mechanism of the device bias via the self-heating and electric field impact on the electron emission and the transient drain current were also illustrated.

Entrainment Effects in Turbulent Boundary Layers

Esta tesis estudia el comportamiento de la región exterior de una capa límite turbulenta sin gradientes de presiones. Se ponen a prueba dos teorías relativamente bien establecidas. La teoría de semejanza para la pared supone que en el caso de haber una pared rugosa, el fluido sólo percibe el cambio en la fricción superficial que causa, y otros efectos secundarios quedarán confinados a una zona pegada a la pared. El consenso actual es que dicha teoría es aproximadamente cierta. En el extremo exterior de la capa límite existe una región producida por la interacción entre las estructuras turbulentas y el flujo irrotacional de la corriente libre llamada interfaz turbulenta/no turbulenta. La mayoría de los resultados al respecto sugieren la presencia de fuerzas de cortadura ligeramente más intensa, lo que la hace distinta al resto del flujo turbulento. Las propiedades de esa región probablemente cambien si la velocidad de crecimiento de la capa límite aumenta, algo que puede conseguirse aumentando la fricción en la pared. La rugosidad y la ingestión de masa están entonces relacionadas, y el comportamiento local de la interfaz turbulenta/no turbulenta puede explicar el motivo por el que las capas límite sobre paredes rugosas no se comportan como en el caso de tener paredes lisas precisamente en la zona exterior. Para estudiar las capas límite a números de Reynolds lo suficientemente elevados, se ha desarrollado un nuevo código de alta resolución para la simulación numérica directa de capas límite turbulentas sin gradiente de presión. Dicho código es capaz de simular capas límite en un intervalo de números de Reynolds entre ReT = 100 — 2000 manteniendo una buena escalabilidad hasta los dos millones de hilos en superordenadores de tipo Blue Gene/Q. Se ha guardado especial atención a la generación de condiciones de contorno a la entrada correctas. Los resultados obtenidos están en concordancia con los resultados previos, tanto en el caso de simulaciones como de experimentos. La interfaz turbulenta/no turbulenta de una capa límite se ha analizado usando un valor umbral del módulo de la vorticidad. Dicho umbral se considera un parámetro para analizar cada superficie obtenida de un contorno del módulo de la vorticidad. Se han encontrado dos regímenes distintos en función del umbral escogido con propiedades opuestas, separados por una transición topológica gradual. Las características geométricas de la zona escalan con o99 cuando u^/isdgg es la unidad de vorticidad. Las propiedades del íluido relativas a la posición del contorno de vorticidad han sido analizados para una serie de umbrales utilizando el campo de distancias esféricas, que puede obtenerse con independencia de la complejidad de la superficie de referencia. Las propiedades del fluido a una distancia dada del inerfaz también dependen del umbral de vorticidad, pero tienen características parecidas con independencia del número de Reynolds. La interacción entre la turbulencia y el flujo no turbulento se restringe a una zona muy fina con un espesor del orden de la escala de Kolmogorov local. Hacia el interior del flujo turbulento las propiedades son indistinguibles del resto de la capa límite. Se ha simulado una capa límite sin gradiente de presiones con una fuerza volumétrica cerca de la pared. La el forzado ha sido diseñado para aumentar la fricción en la pared sin introducir ningún efecto geométrico obvio. La simulación consta de dos dominios, un primer dominio más pequeño y a baja resolución que se encarga de generar condiciones de contorno correctas, y un segundo dominio mayor y a alta resolución donde se aplica el forzado. El estudio de los perfiles y los coeficientes de autocorrelación sugieren que los dos casos, el liso y el forzado, no colapsan más allá de la capa logarítmica por la complejidad geométrica de la zona intermitente, y por el hecho que la distancia a la pared no es una longitud característica. Los efectos causados por la geometría de la zona intermitente pueden evitarse utilizando el interfaz como referencia, y la distancia esférica para el análisis de sus propiedades. Las propiedades condicionadas del flujo escalan con 5QQ y u/uT, las dos únicas escalas contenidas en el modelo de semejanza de pared de Townsend, consistente con estos resultados. ABSTRACT This thesis studies the characteristics of the outer region of zero-pressure-gradient turbulent boundary layers at moderate Reynolds numbers. Two relatively established theories are put to test. The wall similarity theory states that with the presence of roughness, turbulent motion is mostly affected by the additional drag caused by the roughness, and that other secondary effects are restricted to a region very close to the wall. The consensus is that this theory is valid, but only as a first approximation. At the edge of the boundary layer there is a thin layer caused by the interaction between the turbulent eddies and the irroational fluid of the free stream, called turbulent/non-turbulent interface. The bulk of results about this layer suggest the presence of some localized shear, with properties that make it distinguishable from the rest of the turbulent flow. The properties of the interface are likely to change if the rate of spread of the turbulent boundary layer is amplified, an effect that is usually achieved by increasing the drag. Roughness and entrainment are therefore linked, and the local features of the turbulent/non-turbulent interface may explain the reason why rough-wall boundary layers deviate from the wall similarity theory precisely far from the wall. To study boundary layers at a higher Reynolds number, a new high-resolution code for the direct numerical simulation of a zero pressure gradient turbulent boundary layers over a flat plate has been developed. This code is able to simulate a wide range of Reynolds numbers from ReT =100 to 2000 while showing a linear weak scaling up to around two million threads in the BG/Q architecture. Special attention has been paid to the generation of proper inflow boundary conditions. The results are in good agreement with existing numerical and experimental data sets. The turbulent/non-turbulent interface of a boundary layer is analyzed by thresholding the vorticity magnitude field. The value of the threshold is considered a parameter in the analysis of the surfaces obtained from isocontours of the vorticity magnitude. Two different regimes for the surface can be distinguished depending on the threshold, with a gradual topological transition across which its geometrical properties change significantly. The width of the transition scales well with oQg when u^/udgg is used as a unit of vorticity. The properties of the flow relative to the position of the vorticity magnitude isocontour are analyzed within the same range of thresholds, using the ball distance field, which can be obtained regardless of the size of the domain and complexity of the interface. The properties of the flow at a given distance to the interface also depend on the threshold, but they are similar regardless of the Reynolds number. The interaction between the turbulent and the non-turbulent flow occurs in a thin layer with a thickness that scales with the Kolmogorov length. Deeper into the turbulent side, the properties are undistinguishable from the rest of the turbulent flow. A zero-pressure-gradient turbulent boundary layer with a volumetric near-wall forcing has been simulated. The forcing has been designed to increase the wall friction without introducing any obvious geometrical effect. The actual simulation is split in two domains, a smaller one in charge of the generation of correct inflow boundary conditions, and a second and larger one where the forcing is applied. The study of the one-point and twopoint statistics suggest that the forced and the smooth cases do not collapse beyond the logarithmic layer may be caused by the geometrical complexity of the intermittent region, and by the fact that the scaling with the wall-normal coordinate is no longer present. The geometrical effects can be avoided using the turbulent/non-turbulent interface as a reference frame, and the minimum distance respect to it. The conditional analysis of the vorticity field with the alternative reference frame recovers the scaling with 5QQ and v¡uT already present in the logarithmic layer, the only two length-scales allowed if Townsend’s wall similarity hypothesis is valid.