Impact of using new commercial glutathione enriched inactive dry yeast oenological preparations on the aroma and sensory properties of wines

The effect of the addition of a commercial enriched glutathione inactive dry yeast oenological preparation in the volatile and sensory properties of industrially manufactured rosé Grenache wines was evaluated during their shelf-life. In addition, triangle tests were performed at different times during wine aging (among 1 and 9 months) to determine the sensory differences between wines with and without glutathione inactive dry yeast preparations. Descriptive sensory analysis with a trained panel was carried out when sensory differences in the triangle test were noticed. In addition, consumer tests were performed in order to investigate consumers’ acceptability of wines. Results revealed significant sensory differences between control and glutathione inactive dry yeast wines after 9 months of aging. At that time, glutathione inactive dry yeast wines were more intense in fruity aromas (strawberry, banana) and less intense in yeast notes than control wine. The impact of the glutathione inactive dry yeast in the aroma might be the consequence of different effects that these preparations could induce in wine composition: modification of yeast byproducts during fermentation, release of volatile compounds from inactive dry yeast, interaction of wine volatile compounds with yeast macromolecules from inactive dry yeast and a possible antioxidant effect of the glutathione released by the inactive dry yeast preparation on some specific volatile compounds.

Optimizing phosphorus diffusion for photovoltaic applications: peak doping, inactive phosphorus,gettering, and contact formation

The phosphosilicate glass (PSG), fabricated by tube furnace diffusion using a POCl3 source, is widely used as a dopant source in the manufacturing of crystalline silicon solar cells. Although it has been a widely addressed research topic for a long time, there is still lack of a comprehensive understanding of aspects such as the growth, the chemical composition, possible phosphorus depletion, the resulting in-diffused phosphorus profiles, the gettering behavior in silicon, and finally the metal-contact formation. This paper addresses these different aspects simultaneously to further optimize process conditions for photovoltaic applications. To do so, a wide range of experimental data is used and combined with device and process simulations, leading to a more comprehensive interpretation. The results show that slight changes in the PSG process conditions can produce high-quality emitters. It is predicted that PSG processes at 860 °C for 60 min in combination with an etch-back and laser doping from PSG layer results in high-quality emitters with a peak dopant density Npeak = 8.0 × 1018 cm−3 and a junction depth dj = 0.4 μm, resulting in a sheet resistivityρsh = 380 Ω/sq and a saturation current-density J0 below 10 fA/cm2. With these properties, the POCl3 process can compete with ion implantation or doped oxide approaches.