An initial study on atmospheric pressure ion transport by laser ionization and electrostatic fields.

Laser ionization of mixtures of gases at atmospheric pressure and the subsequent transport through electrostatic field is studied. A prototype is designed to perform the transport and detection of the ions. Relevance of the composition of the mixture of gases and ionization parameters is shown

Stopping of α particles from the core in corona plasmas

In the laser fusion reactor design, the protection of first wall and the final optics from high energy ions is the key issue. So, it is necessary to predict the precise energy spectra of ions.In the previous reactor designs, the ion energy spectra were provided by the classical ion transport codes. However, this poster shows that the α particle spectrum is significantly modified by the anomalous process in ablated plasmas.

Functional, structural and phylogenetic analysis of domains underlying the Al sensitivity of the aluminum-activated malate/anion transporter, TaALMT1.

Triticum aestivum aluminum-activated malate transporter (TaALMT1) is the founding member of a unique gene family of anion transporters (ALMTs) that mediate the efflux of organic acids. A small sub-group of root-localized ALMTs, including TaALMT1, is physiologically associated with in planta aluminum (Al) resistance. TaALMT1 exhibits significant enhancement of transport activity in response to extracellular Al. In this study, we integrated structure–function analyses of structurally altered TaALMT1 proteins expressed in Xenopus oocytes with phylogenic analyses of the ALMT family. Our aim is to re-examine the role of protein domains in terms of their potential involvement in the Al-dependent enhancement (i.e. Al-responsiveness) of TaALMT1 transport activity, as well as the roles of all its 43 negatively charged amino acid residues. Our results indicate that the N-domain, which is predicted to form the conductive pathway, mediates ion transport even in the absence of the C-domain. However, segments in both domains are involved in Al3+ sensing. We identified two regions, one at the N-terminus and a hydrophobic region at the C-terminus, that jointly contribute to the Al-response phenotype. Interestingly, the characteristic motif at the N-terminus appears to be specific for Al-responsive ALMTs. Our study highlights the need to include a comprehensive phylogenetic analysis when drawing inferences from structure–function analyses, as a significant proportion of the functional changes observed for TaALMT1 are most likely the result of alterations in the overall structural integrity of ALMT family proteins rather than modifications of specific sites involved in Al3+ sensing.

Electron cooling in probe collection from magnetized plasmas with anomalous transport

The electron-retarding range of the current-voltage characteristic of a flat Langmuir probe perpendicular to a strong magnetic field in a fully ionized plasma is analysed allowing for anomalous (Bohm) cross-field transport and temperature changes in the collection process. With probe size and ion thermal gyroradius comparable, and smaller than the electron mean free path, there is an outer quasineutral region with ion viscosity determinant in allowing nonambipolar parallel and cross flow. A potential overshoot lying either at the base or inside the quasineutral region both makes ions follow Boltzmann's law at negative bias and extends the electron-retarding range to probe bias e(j)p ~ +2Too. Electron heating and cooling occur roughly at positive and negative bias, with a re-minimum around efa ~ - 2 7 ^ ; far from the probe heat conduction cools and heats electrons at and radially away from the probe axis, respectively. The potential overshoot with no thermal effects would reduce the electron current Ie, making the In Ie versus 4>p graph downwards-concave,but cooling further reduces Ie substantially, and may tilt the slope upwards past the temperature minimum. The domain of strict validity of our analysis is narrow in case of low ion mass (deuterium), breaking down with the ion Boltzmann law.

Modelling of chloride transport in non-saturated concrete : from microscale to macroscale

A model for chloride transport in concrete is proposed. The model accounts for transport several transport mechanisms such as diffusion, advection, migration, etc. This work shows the chloride transport equations at the macroscopic scale in non-saturated concrete. The equations involve diffusion, migration, capillary suction, chloride combination and precipitation mechanisms. The material is assumed to be infinitely rigid, though the porosity can change under influence of chloride binding and precipitation. The involved microscopic and macroscopic properties of the materials are measured by standardized methods. The variables which must be imposed on the boundaries are temperature, relative humidity and chloride concentration. The output data of the model are the free, bound, precipitated and total chloride ion concentrations, as well as the pore solution content and the porosity. The proposed equations are solved by means of the finite element method (FEM) implemented in MATLAB (classical Galerkin formulation and the streamline upwind Petrov-Galerkin (SUPG) method to avoid spatial instabilities for advection dominated flows).

Double ion implantation and pulsed laser melting processes for third generation solar cells

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1 in the photons energy range from 1.1 to 0.6 eV.